JP2001284562A - Ｘ線検出装置用アレイ基板およびその検査方法 - Google Patents

Ｘ線検出装置用アレイ基板およびその検査方法

Info

Publication number
JP2001284562A
JP2001284562A JP2000095173A JP2000095173A JP2001284562A JP 2001284562 A JP2001284562 A JP 2001284562A JP 2000095173 A JP2000095173 A JP 2000095173A JP 2000095173 A JP2000095173 A JP 2000095173A JP 2001284562 A JP2001284562 A JP 2001284562A
Authority
JP
Japan
Prior art keywords
electrode
array substrate
pixel
electrically connected
pixel electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000095173A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001284562A5 (enExample
Inventor
Hisaaki Hayashi
央晶 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000095173A priority Critical patent/JP2001284562A/ja
Publication of JP2001284562A publication Critical patent/JP2001284562A/ja
Publication of JP2001284562A5 publication Critical patent/JP2001284562A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2000095173A 2000-03-30 2000-03-30 Ｘ線検出装置用アレイ基板およびその検査方法 Pending JP2001284562A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000095173A JP2001284562A (ja) 2000-03-30 2000-03-30 Ｘ線検出装置用アレイ基板およびその検査方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000095173A JP2001284562A (ja) 2000-03-30 2000-03-30 Ｘ線検出装置用アレイ基板およびその検査方法

Publications (2)

Publication Number Publication Date
JP2001284562A true JP2001284562A (ja) 2001-10-12
JP2001284562A5 JP2001284562A5 (enExample) 2007-05-24

Family

ID=18610109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000095173A Pending JP2001284562A (ja) 2000-03-30 2000-03-30 Ｘ線検出装置用アレイ基板およびその検査方法

Country Status (1)

Country Link
JP (1) JP2001284562A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008004551A1 (en) * 2006-07-04 2008-01-10 Hamamatsu Photonics K.K. Solid-state imaging device
WO2011001557A1 (ja) * 2009-06-29 2011-01-06 シャープ株式会社 アクティブマトリクス基板の製造装置及び製造方法、並びに表示パネルの製造装置及び製造方法
WO2016072281A1 (ja) * 2014-11-05 2016-05-12 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US9470803B2 (en) 2014-08-06 2016-10-18 Samsung Electronics Co., Ltd. X-ray detector
EP2023163A3 (en) * 2007-07-31 2017-01-18 FUJIFILM Corporation Image detecion device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10197647A (ja) * 1997-01-14 1998-07-31 Toshiba Corp Ｘ線画像検出器
JPH1168078A (ja) * 1997-08-22 1999-03-09 Toshiba Corp 撮像装置
JPH11274452A (ja) * 1998-03-19 1999-10-08 Sharp Corp 二次元画像検出器およびその製造方法
US6020590A (en) * 1998-01-22 2000-02-01 Ois Optical Imaging Systems, Inc. Large area imager with UV blocking layer
JP2000323698A (ja) * 1999-03-11 2000-11-24 Sharp Corp アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10197647A (ja) * 1997-01-14 1998-07-31 Toshiba Corp Ｘ線画像検出器
JPH1168078A (ja) * 1997-08-22 1999-03-09 Toshiba Corp 撮像装置
US6020590A (en) * 1998-01-22 2000-02-01 Ois Optical Imaging Systems, Inc. Large area imager with UV blocking layer
JPH11274452A (ja) * 1998-03-19 1999-10-08 Sharp Corp 二次元画像検出器およびその製造方法
JP2000323698A (ja) * 1999-03-11 2000-11-24 Sharp Corp アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8482644B2 (en) 2006-07-04 2013-07-09 Hamamatsu Photonics K.K. Solid-state imaging device
JP2008017019A (ja) * 2006-07-04 2008-01-24 Hamamatsu Photonics Kk 固体撮像装置
WO2008004551A1 (en) * 2006-07-04 2008-01-10 Hamamatsu Photonics K.K. Solid-state imaging device
EP2023163A3 (en) * 2007-07-31 2017-01-18 FUJIFILM Corporation Image detecion device
CN102428378A (zh) * 2009-06-29 2012-04-25 夏普株式会社 有源矩阵基板的制造装置和制造方法以及显示面板的制造装置和制造方法
US8439717B2 (en) 2009-06-29 2013-05-14 Sharp Kabushiki Kaisha Device and method for manufacturing active matrix substrate, and device and method for manufacturing display panel
CN102428378B (zh) * 2009-06-29 2014-07-30 夏普株式会社 有源矩阵基板的制造装置和制造方法以及显示面板的制造装置和制造方法
WO2011001557A1 (ja) * 2009-06-29 2011-01-06 シャープ株式会社 アクティブマトリクス基板の製造装置及び製造方法、並びに表示パネルの製造装置及び製造方法
US9470803B2 (en) 2014-08-06 2016-10-18 Samsung Electronics Co., Ltd. X-ray detector
WO2016072281A1 (ja) * 2014-11-05 2016-05-12 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JPWO2016072281A1 (ja) * 2014-11-05 2017-08-31 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその製造方法、並びに電子機器
US10453890B2 (en) 2014-11-05 2019-10-22 Sony Semiconductor Solutions Corporation Solid-state image sensor with separated electrode, method of manufacturing the same, and electronic device
US11217620B2 (en) 2014-11-05 2022-01-04 Sony Semiconductor Solutions Corporation Solid-state image sensor for phase difference detection, method of manufacturing the same, and electronic device
JP2022027813A (ja) * 2014-11-05 2022-02-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP7301936B2 (ja) 2014-11-05 2023-07-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその製造方法、並びに電子機器

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