JP2008017019A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2008017019A JP2008017019A JP2006184514A JP2006184514A JP2008017019A JP 2008017019 A JP2008017019 A JP 2008017019A JP 2006184514 A JP2006184514 A JP 2006184514A JP 2006184514 A JP2006184514 A JP 2006184514A JP 2008017019 A JP2008017019 A JP 2008017019A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 45
- 239000007787 solid Substances 0.000 title abstract 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 230000010354 integration Effects 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Abstract
【解決手段】固体撮像装置1では、受光部10において複数個の画素部が2次元配列されており、各画素部Pm,nには2個のフォトダイオードPD1,PD2が含まれている。フォトダイオードPD1,PD2それぞれで発生した電荷は信号読出部20に入力され、その電荷量に応じた電圧値が信号読出部20から出力される。信号読出部20から出力された電圧値はAD変換部40に入力され、この入力電圧値に応じたデジタル値がAD変換部40から出力される。加算部50において、受光部10の各画素部Pm,nについて、該画素部に含まれる2個のフォトダイオードPD1,PD2それぞれで発生した電荷の量に応じてAD変換部40から出力されるデジタル値の総和が演算され、その総和値であるデジタル値が出力される。
【選択図】図1
Description
Claims (2)
- 各々複数個のフォトダイオードを含む複数個の画素部が2次元配列された受光部と、
前記受光部の各画素部に含まれる複数個のフォトダイオードそれぞれで発生した電荷の量に応じた電圧値を出力する信号読出部と、
前記信号読出部から出力された電圧値を入力しAD変換して、この入力電圧値に応じたデジタル値を出力するAD変換部と、
前記受光部の各画素部について、該画素部に含まれる複数個のフォトダイオードそれぞれで発生した電荷の量に応じて前記AD変換部から出力されるデジタル値の総和を演算し、その総和値であるデジタル値を出力する加算部と、
を備え、
前記受光部の各画素部に含まれる複数個のフォトダイオードそれぞれの光感応領域が全体として正方形である、
ことを特徴とする固体撮像装置。 - 前記受光部の各画素部に含まれる複数個のフォトダイオードそれぞれの光感応領域が互いに等しい面積を有している、ことを特徴とする請求項1記載の固体撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006184514A JP4808557B2 (ja) | 2006-07-04 | 2006-07-04 | 固体撮像装置 |
EP07768080A EP2037674B1 (en) | 2006-07-04 | 2007-07-03 | Solid-state imaging device |
CN2007800253982A CN101485195B (zh) | 2006-07-04 | 2007-07-03 | 固体拍摄装置 |
KR1020087027608A KR101407807B1 (ko) | 2006-07-04 | 2007-07-03 | 고체 촬상 장치 |
US12/307,173 US8482644B2 (en) | 2006-07-04 | 2007-07-03 | Solid-state imaging device |
PCT/JP2007/063306 WO2008004551A1 (fr) | 2006-07-04 | 2007-07-03 | dispositif d'imagerie à semi-conducteurs |
TW096124323A TWI424741B (zh) | 2006-07-04 | 2007-07-04 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006184514A JP4808557B2 (ja) | 2006-07-04 | 2006-07-04 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008017019A true JP2008017019A (ja) | 2008-01-24 |
JP4808557B2 JP4808557B2 (ja) | 2011-11-02 |
Family
ID=38894519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006184514A Active JP4808557B2 (ja) | 2006-07-04 | 2006-07-04 | 固体撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8482644B2 (ja) |
EP (1) | EP2037674B1 (ja) |
JP (1) | JP4808557B2 (ja) |
KR (1) | KR101407807B1 (ja) |
CN (1) | CN101485195B (ja) |
TW (1) | TWI424741B (ja) |
WO (1) | WO2008004551A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009246948A (ja) * | 2008-03-31 | 2009-10-22 | General Electric Co <Ge> | 二機能検出器装置 |
WO2009154136A1 (ja) * | 2008-06-18 | 2009-12-23 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP2014072541A (ja) * | 2012-09-27 | 2014-04-21 | Nikon Corp | 撮像素子および撮像装置 |
WO2017002730A1 (ja) * | 2015-06-30 | 2017-01-05 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP2021101551A (ja) * | 2020-01-06 | 2021-07-08 | 株式会社ニコン | 撮像素子 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5091695B2 (ja) * | 2008-01-24 | 2012-12-05 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5058057B2 (ja) | 2008-04-24 | 2012-10-24 | 浜松ホトニクス株式会社 | 医療用x線撮像システム |
JP5155759B2 (ja) * | 2008-07-17 | 2013-03-06 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US8576312B2 (en) * | 2009-02-04 | 2013-11-05 | Rosnes Corporation | Solid-state image pickup device with particular pixel arrangement |
US8547458B2 (en) | 2009-02-04 | 2013-10-01 | Rosnes Corporation | Solid-state image pickup device |
JP2011242261A (ja) * | 2010-05-18 | 2011-12-01 | Fujifilm Corp | 放射線検出器 |
JP5582945B2 (ja) * | 2010-09-28 | 2014-09-03 | キヤノン株式会社 | 撮像システム |
EP2738812B8 (en) | 2012-11-29 | 2018-07-18 | ams Sensors Belgium BVBA | A pixel array |
EP3051811A4 (en) * | 2013-09-26 | 2017-03-22 | Nikon Corporation | Image pickup element and image pickup device |
JP6530593B2 (ja) * | 2014-08-11 | 2019-06-12 | キヤノン株式会社 | 撮像装置及びその制御方法、記憶媒体 |
JP6218799B2 (ja) * | 2015-01-05 | 2017-10-25 | キヤノン株式会社 | 撮像素子及び撮像装置 |
US9731283B2 (en) | 2015-09-23 | 2017-08-15 | Exxonmobil Research And Engineering Company | Stabilization of bulk catalysts with organo-metalloxane framework |
JP7187478B2 (ja) | 2017-11-24 | 2022-12-12 | 浜松ホトニクス株式会社 | フォトンカウンティング装置およびフォトンカウンティング方法 |
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JPH03187686A (ja) * | 1989-12-18 | 1991-08-15 | Shimadzu Corp | 撮像装置 |
JP2001284562A (ja) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | X線検出装置用アレイ基板およびその検査方法 |
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JP2002076317A (ja) * | 2000-08-28 | 2002-03-15 | Canon Inc | 固体撮像装置および撮像システム |
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JP2006238410A (ja) * | 2005-01-31 | 2006-09-07 | Fuji Photo Film Co Ltd | 撮像装置 |
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-
2006
- 2006-07-04 JP JP2006184514A patent/JP4808557B2/ja active Active
-
2007
- 2007-07-03 KR KR1020087027608A patent/KR101407807B1/ko active IP Right Grant
- 2007-07-03 US US12/307,173 patent/US8482644B2/en active Active
- 2007-07-03 EP EP07768080A patent/EP2037674B1/en active Active
- 2007-07-03 WO PCT/JP2007/063306 patent/WO2008004551A1/ja active Application Filing
- 2007-07-03 CN CN2007800253982A patent/CN101485195B/zh active Active
- 2007-07-04 TW TW096124323A patent/TWI424741B/zh active
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Cited By (15)
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JP2009246948A (ja) * | 2008-03-31 | 2009-10-22 | General Electric Co <Ge> | 二機能検出器装置 |
KR101552367B1 (ko) | 2008-06-18 | 2015-09-10 | 하마마츠 포토닉스 가부시키가이샤 | 고체 촬상 장치 |
WO2009154136A1 (ja) * | 2008-06-18 | 2009-12-23 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP2010000136A (ja) * | 2008-06-18 | 2010-01-07 | Hamamatsu Photonics Kk | 固体撮像装置 |
US8368028B2 (en) | 2008-06-18 | 2013-02-05 | Hamamatsu Photonics K.K. | Solid-state image pickup device |
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JP2014072541A (ja) * | 2012-09-27 | 2014-04-21 | Nikon Corp | 撮像素子および撮像装置 |
US10270999B2 (en) | 2012-09-27 | 2019-04-23 | Nikon Corporation | Image sensor and image-capturing device |
US11032506B2 (en) | 2012-09-27 | 2021-06-08 | Nikon Corporation | Image sensor and image-capturing device |
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WO2017002730A1 (ja) * | 2015-06-30 | 2017-01-05 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP2017017457A (ja) * | 2015-06-30 | 2017-01-19 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US10212368B2 (en) | 2015-06-30 | 2019-02-19 | Hamamatsu Photonics K.K. | Solid-state imaging device |
JP2021101551A (ja) * | 2020-01-06 | 2021-07-08 | 株式会社ニコン | 撮像素子 |
JP7314962B2 (ja) | 2020-01-06 | 2023-07-26 | 株式会社ニコン | 撮像素子及び撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200818890A (en) | 2008-04-16 |
CN101485195B (zh) | 2011-10-19 |
CN101485195A (zh) | 2009-07-15 |
JP4808557B2 (ja) | 2011-11-02 |
EP2037674B1 (en) | 2011-10-26 |
KR20090026133A (ko) | 2009-03-11 |
WO2008004551A1 (fr) | 2008-01-10 |
US8482644B2 (en) | 2013-07-09 |
EP2037674A4 (en) | 2009-10-28 |
TWI424741B (zh) | 2014-01-21 |
KR101407807B1 (ko) | 2014-06-17 |
US20090295954A1 (en) | 2009-12-03 |
EP2037674A1 (en) | 2009-03-18 |
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