JP2001256620A - 磁気抵抗センサおよびこれを搭載した磁気記録再生装置 - Google Patents

磁気抵抗センサおよびこれを搭載した磁気記録再生装置

Info

Publication number
JP2001256620A
JP2001256620A JP2000073925A JP2000073925A JP2001256620A JP 2001256620 A JP2001256620 A JP 2001256620A JP 2000073925 A JP2000073925 A JP 2000073925A JP 2000073925 A JP2000073925 A JP 2000073925A JP 2001256620 A JP2001256620 A JP 2001256620A
Authority
JP
Japan
Prior art keywords
magnetic
layer
film
pair
recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000073925A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001256620A5 (enExample
Inventor
Katsuro Watanabe
克朗 渡辺
Hiromasa Takahashi
宏昌 高橋
Nobuo Yoshida
伸雄 芳田
Takashi Kawabe
隆 川邉
Kazuhiro Nakamoto
一広 中本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000073925A priority Critical patent/JP2001256620A/ja
Priority to US09/803,032 priority patent/US6693774B2/en
Publication of JP2001256620A publication Critical patent/JP2001256620A/ja
Publication of JP2001256620A5 publication Critical patent/JP2001256620A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/40—Protective measures on heads, e.g. against excessive temperature 

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
JP2000073925A 2000-03-13 2000-03-13 磁気抵抗センサおよびこれを搭載した磁気記録再生装置 Pending JP2001256620A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000073925A JP2001256620A (ja) 2000-03-13 2000-03-13 磁気抵抗センサおよびこれを搭載した磁気記録再生装置
US09/803,032 US6693774B2 (en) 2000-03-13 2001-03-12 Magnetoresistive sensor and magnetic storage apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000073925A JP2001256620A (ja) 2000-03-13 2000-03-13 磁気抵抗センサおよびこれを搭載した磁気記録再生装置

Publications (2)

Publication Number Publication Date
JP2001256620A true JP2001256620A (ja) 2001-09-21
JP2001256620A5 JP2001256620A5 (enExample) 2005-04-14

Family

ID=18592066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000073925A Pending JP2001256620A (ja) 2000-03-13 2000-03-13 磁気抵抗センサおよびこれを搭載した磁気記録再生装置

Country Status (2)

Country Link
US (1) US6693774B2 (enExample)
JP (1) JP2001256620A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7805828B2 (en) 2003-08-07 2010-10-05 Tdk Corporation Method of manufacturing thin-film magnetic head

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7031122B2 (en) * 2001-10-26 2006-04-18 Seagate Technology Llc Magnetic shields for reduced variations of head-media spacing
US6775108B2 (en) * 2001-11-02 2004-08-10 Seagate Technology Llc Magnetic head having a read element shield and substrate with matching coefficients of thermal expansion
US7126796B2 (en) 2002-09-25 2006-10-24 Hitachi Global Storage Technologies Netherlands B.V. Read sensor with overlaying lead layer top surface portions interfaced by hard bias and tapered lead layers
US7579042B2 (en) 2004-07-29 2009-08-25 Wisconsin Alumni Research Foundation Methods for the fabrication of thermally stable magnetic tunnel junctions
US7450353B2 (en) * 2004-10-25 2008-11-11 The United States of America as represented by the Secretary of Commerce, The National Institute of Standards & Technology Zig-zag shape biased anisotropic magnetoresistive sensor
US7450352B2 (en) * 2005-06-28 2008-11-11 Wisconsin Alumni Research Foundation Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers
JP4705478B2 (ja) * 2006-01-19 2011-06-22 ヒタチグローバルストレージテクノロジーズネザーランドビーブイ 磁気ヘッド
WO2008093568A1 (ja) * 2007-02-02 2008-08-07 Murata Manufacturing Co., Ltd. 積層コイル部品
US8098463B2 (en) * 2008-07-30 2012-01-17 Hitachi Global Storage Technologies Netherlands, B.V. Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
CN112753099B (zh) * 2019-03-28 2024-04-16 Tdk株式会社 存储元件、半导体装置、磁记录阵列和存储元件的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206590A (en) 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JPH05266437A (ja) 1992-03-17 1993-10-15 Fujitsu Ltd 磁気抵抗効果型ヘッド
US5568335A (en) * 1994-12-29 1996-10-22 International Business Machines Corporation Multi-layer gap structure for high resolution magnetoresistive read head
JP3787403B2 (ja) 1996-02-14 2006-06-21 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果型ヘッド
US5936810A (en) 1996-02-14 1999-08-10 Hitachi, Ltd. Magnetoresistive effect head
JPH11175920A (ja) * 1997-12-05 1999-07-02 Nec Corp 磁気抵抗効果型複合ヘッドおよびその製造方法
JP2000048327A (ja) * 1998-07-31 2000-02-18 Alps Electric Co Ltd 薄膜磁気ヘッド
JP2000182223A (ja) * 1998-10-08 2000-06-30 Alps Electric Co Ltd 薄膜磁気ヘッド及びその製造方法
US6452761B1 (en) * 2000-01-14 2002-09-17 International Business Machines Corporation Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7805828B2 (en) 2003-08-07 2010-10-05 Tdk Corporation Method of manufacturing thin-film magnetic head

Also Published As

Publication number Publication date
US20010028538A1 (en) 2001-10-11
US6693774B2 (en) 2004-02-17

Similar Documents

Publication Publication Date Title
CN114730569B (zh) 含不同堆叠传感器的二维磁记录读取头结构及磁盘驱动器
US5739990A (en) Spin-valve GMR sensor with inbound exchange stabilization
JP3550533B2 (ja) 磁界センサー、磁気ヘッド、磁気記録再生装置及び磁気記憶素子
EP1400957A2 (en) Spin-valve head containing partial current-screening-layer, production method of said head, and current-screening method
JP4088641B2 (ja) 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリ、磁気ディスク装置、磁気メモリセルおよび電流センサ
KR100331413B1 (ko) 자기저항효과형재생헤드및그재생헤드를탑재한자기디스크장치
US6456466B1 (en) Magnetic head with shield layer having discontinuous multi-layer or mixed layer and magnetic recording apparatus utilizing the magnetic head
JP2001006130A (ja) トンネル磁気抵抗効果型ヘッド
CN101359475A (zh) 再现磁头及磁记录装置
JP2004178656A (ja) 磁気記録ヘッド及び磁気記録再生装置
JPH07262520A (ja) 薄膜磁気ヘッド
CN1223431A (zh) 屏蔽式磁性隧道结磁阻读出磁头
JP2002150512A (ja) 磁気抵抗効果素子および磁気抵抗効果型磁気ヘッド
JP4603864B2 (ja) 膜面直交電流型巨大磁気抵抗効果センサおよびその製造方法
US6934133B2 (en) Three terminal magnetic head having a magnetic semiconductor and a tunnel magnetoresistive film and magnetic recording apparatus including the head
US8830635B2 (en) Magnetic head having shield layer(s) with low coefficient of thermal expansion and magnetic storage apparatus having same
JP5675728B2 (ja) 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気抵抗効果素子の製造方法
JP3836294B2 (ja) 磁気ヘッド、及びこれを用いた磁気記録再生装置
JP2001256620A (ja) 磁気抵抗センサおよびこれを搭載した磁気記録再生装置
JP2000306221A (ja) 磁気抵抗効果ヘッドおよびその製造方法
CN100367352C (zh) 磁阻磁头以及磁记录-复制装置
JP4377777B2 (ja) 磁気ヘッド、ヘッドサスペンションアッセンブリ、および磁気再生装置
KR100502752B1 (ko) 자기 저항 소자 , 자기 저항 헤드, 및 자기기록/재생 장치
JP2001028108A (ja) 磁気抵抗効果ヘッドの製造方法
JP2005018903A (ja) 磁気ヘッドおよび磁気記録再生装置

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20031128

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040330

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040331

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040609

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050615

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060214

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060510

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060510

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060627