JP2001256620A5 - - Google Patents

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Publication number
JP2001256620A5
JP2001256620A5 JP2000073925A JP2000073925A JP2001256620A5 JP 2001256620 A5 JP2001256620 A5 JP 2001256620A5 JP 2000073925 A JP2000073925 A JP 2000073925A JP 2000073925 A JP2000073925 A JP 2000073925A JP 2001256620 A5 JP2001256620 A5 JP 2001256620A5
Authority
JP
Japan
Prior art keywords
film
pair
magnetic
magnetoresistive
shield layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000073925A
Other languages
English (en)
Japanese (ja)
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JP2001256620A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000073925A priority Critical patent/JP2001256620A/ja
Priority claimed from JP2000073925A external-priority patent/JP2001256620A/ja
Priority to US09/803,032 priority patent/US6693774B2/en
Publication of JP2001256620A publication Critical patent/JP2001256620A/ja
Publication of JP2001256620A5 publication Critical patent/JP2001256620A5/ja
Pending legal-status Critical Current

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JP2000073925A 2000-03-13 2000-03-13 磁気抵抗センサおよびこれを搭載した磁気記録再生装置 Pending JP2001256620A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000073925A JP2001256620A (ja) 2000-03-13 2000-03-13 磁気抵抗センサおよびこれを搭載した磁気記録再生装置
US09/803,032 US6693774B2 (en) 2000-03-13 2001-03-12 Magnetoresistive sensor and magnetic storage apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000073925A JP2001256620A (ja) 2000-03-13 2000-03-13 磁気抵抗センサおよびこれを搭載した磁気記録再生装置

Publications (2)

Publication Number Publication Date
JP2001256620A JP2001256620A (ja) 2001-09-21
JP2001256620A5 true JP2001256620A5 (enExample) 2005-04-14

Family

ID=18592066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000073925A Pending JP2001256620A (ja) 2000-03-13 2000-03-13 磁気抵抗センサおよびこれを搭載した磁気記録再生装置

Country Status (2)

Country Link
US (1) US6693774B2 (enExample)
JP (1) JP2001256620A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7031122B2 (en) * 2001-10-26 2006-04-18 Seagate Technology Llc Magnetic shields for reduced variations of head-media spacing
US6775108B2 (en) * 2001-11-02 2004-08-10 Seagate Technology Llc Magnetic head having a read element shield and substrate with matching coefficients of thermal expansion
US7126796B2 (en) 2002-09-25 2006-10-24 Hitachi Global Storage Technologies Netherlands B.V. Read sensor with overlaying lead layer top surface portions interfaced by hard bias and tapered lead layers
JP2005056538A (ja) 2003-08-07 2005-03-03 Tdk Corp 薄膜磁気ヘッドの製造方法
US7579042B2 (en) 2004-07-29 2009-08-25 Wisconsin Alumni Research Foundation Methods for the fabrication of thermally stable magnetic tunnel junctions
US7450353B2 (en) * 2004-10-25 2008-11-11 The United States of America as represented by the Secretary of Commerce, The National Institute of Standards & Technology Zig-zag shape biased anisotropic magnetoresistive sensor
US7450352B2 (en) * 2005-06-28 2008-11-11 Wisconsin Alumni Research Foundation Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers
JP4705478B2 (ja) * 2006-01-19 2011-06-22 ヒタチグローバルストレージテクノロジーズネザーランドビーブイ 磁気ヘッド
KR101174541B1 (ko) * 2007-02-02 2012-08-16 가부시키가이샤 무라타 세이사쿠쇼 적층 코일 부품
US8098463B2 (en) * 2008-07-30 2012-01-17 Hitachi Global Storage Technologies Netherlands, B.V. Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
US11974507B2 (en) * 2019-03-28 2024-04-30 Tdk Corporation Storage element, semiconductor device, magnetic recording array, and method of manufacturing storage element

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206590A (en) 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JPH05266437A (ja) 1992-03-17 1993-10-15 Fujitsu Ltd 磁気抵抗効果型ヘッド
US5568335A (en) * 1994-12-29 1996-10-22 International Business Machines Corporation Multi-layer gap structure for high resolution magnetoresistive read head
US5936810A (en) 1996-02-14 1999-08-10 Hitachi, Ltd. Magnetoresistive effect head
JP3787403B2 (ja) 1996-02-14 2006-06-21 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果型ヘッド
JPH11175920A (ja) * 1997-12-05 1999-07-02 Nec Corp 磁気抵抗効果型複合ヘッドおよびその製造方法
JP2000048327A (ja) * 1998-07-31 2000-02-18 Alps Electric Co Ltd 薄膜磁気ヘッド
JP2000182223A (ja) * 1998-10-08 2000-06-30 Alps Electric Co Ltd 薄膜磁気ヘッド及びその製造方法
US6452761B1 (en) * 2000-01-14 2002-09-17 International Business Machines Corporation Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity

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