JP2001253792A - 酸化物単結晶の板状体の製造方法 - Google Patents
酸化物単結晶の板状体の製造方法Info
- Publication number
- JP2001253792A JP2001253792A JP2000065123A JP2000065123A JP2001253792A JP 2001253792 A JP2001253792 A JP 2001253792A JP 2000065123 A JP2000065123 A JP 2000065123A JP 2000065123 A JP2000065123 A JP 2000065123A JP 2001253792 A JP2001253792 A JP 2001253792A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- crystal
- single crystal
- seed crystal
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000002994 raw material Substances 0.000 claims abstract description 16
- 239000000155 melt Substances 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 22
- 239000000203 mixture Substances 0.000 description 11
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 10
- OBTSLRFPKIKXSZ-UHFFFAOYSA-N lithium potassium Chemical compound [Li].[K] OBTSLRFPKIKXSZ-UHFFFAOYSA-N 0.000 description 10
- 239000000843 powder Substances 0.000 description 9
- 229910052744 lithium Inorganic materials 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- KQTHVJNNHOBLBR-UHFFFAOYSA-N [Li].[Li].[K] Chemical compound [Li].[Li].[K] KQTHVJNNHOBLBR-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical group [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000065123A JP2001253792A (ja) | 2000-03-09 | 2000-03-09 | 酸化物単結晶の板状体の製造方法 |
| US09/799,309 US6451110B2 (en) | 2000-03-09 | 2001-03-05 | Process for producing a planar body of an oxide single crystal |
| EP01302032A EP1138808A1 (en) | 2000-03-09 | 2001-03-06 | Process for producing a planar body of an oxide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000065123A JP2001253792A (ja) | 2000-03-09 | 2000-03-09 | 酸化物単結晶の板状体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001253792A true JP2001253792A (ja) | 2001-09-18 |
| JP2001253792A5 JP2001253792A5 (enExample) | 2005-10-27 |
Family
ID=18584705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000065123A Pending JP2001253792A (ja) | 2000-03-09 | 2000-03-09 | 酸化物単結晶の板状体の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6451110B2 (enExample) |
| EP (1) | EP1138808A1 (enExample) |
| JP (1) | JP2001253792A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021172575A (ja) * | 2020-04-30 | 2021-11-01 | Tdk株式会社 | 坩堝および結晶製造装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4334773B2 (ja) * | 2000-03-09 | 2009-09-30 | 日本碍子株式会社 | 酸化物単結晶の板状体の製造方法 |
| EP2221608B1 (de) * | 2009-02-18 | 2015-08-12 | F. Hoffmann-La Roche AG | Testverfahren zur Untersuchung einer Körperflüssigkeit |
| JP2022110664A (ja) * | 2021-01-19 | 2022-07-29 | Tdk株式会社 | 坩堝、結晶体および光学素子 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3977071A (en) * | 1969-09-29 | 1976-08-31 | Texas Instruments Incorporated | High depth-to-width ratio etching process for monocrystalline germanium semiconductor materials |
| FR2321326A1 (fr) | 1975-08-08 | 1977-03-18 | Ugine Kuhlmann | Procede de fabrication en continu de monocristaux preformes |
| US4040868A (en) * | 1976-03-09 | 1977-08-09 | General Electric Company | Semiconductor device manufacture |
| US4128616A (en) * | 1977-08-11 | 1978-12-05 | Bell Telephone Laboratories, Incorporated | Micropositioners using a crystal having moveable domain walls |
| US4170490A (en) * | 1978-12-07 | 1979-10-09 | General Electric Company | Process for thermal gradient zone melting utilizing a beveled wafer edge |
| US5690734A (en) | 1995-03-22 | 1997-11-25 | Ngk Insulators, Ltd. | Single crystal growing method |
| JP3792768B2 (ja) | 1995-03-22 | 2006-07-05 | 日本碍子株式会社 | 酸化物単結晶の製造方法および装置 |
| JPH08339002A (ja) | 1995-04-10 | 1996-12-24 | Ngk Insulators Ltd | 第二高調波発生素子およびその製造方法 |
-
2000
- 2000-03-09 JP JP2000065123A patent/JP2001253792A/ja active Pending
-
2001
- 2001-03-05 US US09/799,309 patent/US6451110B2/en not_active Expired - Fee Related
- 2001-03-06 EP EP01302032A patent/EP1138808A1/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021172575A (ja) * | 2020-04-30 | 2021-11-01 | Tdk株式会社 | 坩堝および結晶製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1138808A1 (en) | 2001-10-04 |
| US20010025599A1 (en) | 2001-10-04 |
| US6451110B2 (en) | 2002-09-17 |
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