JP2001210839A5 - - Google Patents

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Publication number
JP2001210839A5
JP2001210839A5 JP2000020920A JP2000020920A JP2001210839A5 JP 2001210839 A5 JP2001210839 A5 JP 2001210839A5 JP 2000020920 A JP2000020920 A JP 2000020920A JP 2000020920 A JP2000020920 A JP 2000020920A JP 2001210839 A5 JP2001210839 A5 JP 2001210839A5
Authority
JP
Japan
Prior art keywords
semiconductor
circuit device
integrated circuit
region
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000020920A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001210839A (ja
JP4149109B2 (ja
Filing date
Publication date
Priority claimed from JP2000020920A external-priority patent/JP4149109B2/ja
Priority to JP2000020920A priority Critical patent/JP4149109B2/ja
Application filed filed Critical
Priority to TW90101161A priority patent/TW573365B/zh
Priority to KR1020010003573A priority patent/KR100738366B1/ko
Priority to US09/768,471 priority patent/US6803644B2/en
Publication of JP2001210839A publication Critical patent/JP2001210839A/ja
Priority to US10/942,860 priority patent/US7064090B2/en
Publication of JP2001210839A5 publication Critical patent/JP2001210839A5/ja
Publication of JP4149109B2 publication Critical patent/JP4149109B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000020920A 2000-01-28 2000-01-28 半導体集積回路装置およびその製造方法 Expired - Fee Related JP4149109B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000020920A JP4149109B2 (ja) 2000-01-28 2000-01-28 半導体集積回路装置およびその製造方法
TW90101161A TW573365B (en) 2000-01-28 2001-01-18 Semiconductor integrated circuit device and manufacturing method of the same
KR1020010003573A KR100738366B1 (ko) 2000-01-28 2001-01-22 반도체 집적회로장치 및 그 제조방법
US09/768,471 US6803644B2 (en) 2000-01-28 2001-01-25 Semiconductor integrated circuit device and method of manufacturing the same
US10/942,860 US7064090B2 (en) 2000-01-28 2004-09-17 Method of manufacturing a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000020920A JP4149109B2 (ja) 2000-01-28 2000-01-28 半導体集積回路装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2001210839A JP2001210839A (ja) 2001-08-03
JP2001210839A5 true JP2001210839A5 (https=) 2005-02-03
JP4149109B2 JP4149109B2 (ja) 2008-09-10

Family

ID=18547400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000020920A Expired - Fee Related JP4149109B2 (ja) 2000-01-28 2000-01-28 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (2) US6803644B2 (https=)
JP (1) JP4149109B2 (https=)
KR (1) KR100738366B1 (https=)
TW (1) TW573365B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101334A (ja) 2003-09-25 2005-04-14 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US6977195B1 (en) * 2004-08-16 2005-12-20 Fasl, Llc Test structure for characterizing junction leakage current
KR100644895B1 (ko) 2004-12-15 2006-11-15 엘지전자 주식회사 자기정렬방식에 의한 양방향문턱전압 특성을 갖는제너다이오드의 제조방법
KR100861294B1 (ko) * 2006-02-24 2008-10-01 주식회사 하이닉스반도체 반도체 회로용 정전기 보호소자
JP2008218564A (ja) 2007-03-01 2008-09-18 Matsushita Electric Ind Co Ltd 半導体装置
US7876547B2 (en) * 2007-05-30 2011-01-25 International Business Machines Corporation Vertical parallel plate capacitor structures
US7698678B2 (en) * 2007-05-30 2010-04-13 International Business Machines Corporation Methodology for automated design of vertical parallel plate capacitors
US20090102016A1 (en) * 2007-10-22 2009-04-23 International Business Machines Corporation Design structure incorporating vertical parallel plate capacitor structures
JP5255305B2 (ja) 2008-03-27 2013-08-07 ルネサスエレクトロニクス株式会社 半導体集積回路装置および半導体集積回路装置の製造方法
US20130075747A1 (en) * 2011-09-23 2013-03-28 Robert J. Purtell Esd protection using low leakage zener diodes formed with microwave radiation
US12501632B2 (en) 2022-12-15 2025-12-16 Nxp B.V. Semiconductor device with improved mechanical stress resistance

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Publication number Priority date Publication date Assignee Title
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS6048765B2 (ja) * 1977-12-19 1985-10-29 日本電気株式会社 定電圧半導体集積回路
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
JPS5988871A (ja) * 1982-11-12 1984-05-22 バ−・ブラウン・コ−ポレ−ション 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法
US4590664A (en) * 1983-07-29 1986-05-27 Harris Corporation Method of fabricating low noise reference diodes and transistors
US4646114A (en) * 1984-12-31 1987-02-24 Raytheon Company Integrated circuit Zener diode
JPS62110435A (ja) * 1985-11-04 1987-05-21 シ−メンス、アクチエンゲゼルシヤフト 加入者線の過電圧保護用集積回路装置
JPS6366974A (ja) * 1986-09-08 1988-03-25 Hitachi Ltd 半導体集積回路装置
JPS6459949A (en) 1987-08-31 1989-03-07 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JPH03108376A (ja) * 1989-09-21 1991-05-08 New Japan Radio Co Ltd 埋込型ツェナーダイオードおよびその製法
US5027165A (en) * 1990-05-22 1991-06-25 Maxim Integrated Products Buried zener diode
US5929502A (en) * 1992-01-16 1999-07-27 Harris Corporation Level shifter stage with punch through diode
EP0597537B1 (en) * 1992-11-12 1998-02-11 Koninklijke Philips Electronics N.V. Electron tube comprising a semiconductor cathode
JP3353388B2 (ja) * 1993-06-23 2002-12-03 株式会社デンソー 電力用半導体装置
JP3148510B2 (ja) * 1994-05-18 2001-03-19 ローム株式会社 ツェナーダイオード
JPH0856002A (ja) * 1994-08-12 1996-02-27 Sony Corp ダイオード
JP4278721B2 (ja) * 1994-09-30 2009-06-17 テキサス インスツルメンツ インコーポレイテツド 高い逆降伏電圧を有するツェナーダイオード
EP0720237A1 (en) * 1994-12-30 1996-07-03 STMicroelectronics S.r.l. Zener diode for integrated circuits
US5756387A (en) * 1994-12-30 1998-05-26 Sgs-Thomson Microelectronics S.R.L. Method for forming zener diode with high time stability and low noise
US5691554A (en) * 1995-12-15 1997-11-25 Motorola, Inc. Protection circuit
US6114872A (en) * 1996-05-31 2000-09-05 Nippon Steel Corporation Differential input circuit
JP3108376B2 (ja) 1996-07-04 2000-11-13 沖電気工業株式会社 感熱記録媒体用のジアゾニウム塩

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