JP2001194792A5 - - Google Patents

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Publication number
JP2001194792A5
JP2001194792A5 JP2000309755A JP2000309755A JP2001194792A5 JP 2001194792 A5 JP2001194792 A5 JP 2001194792A5 JP 2000309755 A JP2000309755 A JP 2000309755A JP 2000309755 A JP2000309755 A JP 2000309755A JP 2001194792 A5 JP2001194792 A5 JP 2001194792A5
Authority
JP
Japan
Prior art keywords
acid
photoresist
mol
group
lactone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000309755A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001194792A (ja
Filing date
Publication date
Priority claimed from US09/414,738 external-priority patent/US6492086B1/en
Application filed filed Critical
Publication of JP2001194792A publication Critical patent/JP2001194792A/ja
Publication of JP2001194792A5 publication Critical patent/JP2001194792A5/ja
Pending legal-status Critical Current

Links

JP2000309755A 1999-10-08 2000-10-10 フェノール／脂環式コポリマーおよびフォトレジスト Pending JP2001194792A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/414738 1999-10-08
US09/414,738 US6492086B1 (en) 1999-10-08 1999-10-08 Phenolic/alicyclic copolymers and photoresists

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011164107A Division JP2011215647A (ja) 1999-10-08 2011-07-27 フェノール／脂環式コポリマーおよびフォトレジスト

Publications (2)

Publication Number Publication Date
JP2001194792A JP2001194792A (ja) 2001-07-19
JP2001194792A5 true JP2001194792A5 (enExample) 2007-11-22

Family

ID=23642742

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000309755A Pending JP2001194792A (ja) 1999-10-08 2000-10-10 フェノール／脂環式コポリマーおよびフォトレジスト
JP2011164107A Pending JP2011215647A (ja) 1999-10-08 2011-07-27 フェノール／脂環式コポリマーおよびフォトレジスト

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011164107A Pending JP2011215647A (ja) 1999-10-08 2011-07-27 フェノール／脂環式コポリマーおよびフォトレジスト

Country Status (7)

Country Link
US (2) US6492086B1 (enExample)
EP (1) EP1091250A1 (enExample)
JP (2) JP2001194792A (enExample)
KR (1) KR20010040033A (enExample)
CN (1) CN1170207C (enExample)
SG (1) SG93273A1 (enExample)
TW (1) TW573211B (enExample)

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TWI269118B (en) * 2001-03-05 2006-12-21 Sumitomo Chemical Co Chemical amplifying type positive resist composition
US7008749B2 (en) * 2001-03-12 2006-03-07 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
JP4595275B2 (ja) 2001-09-28 2010-12-08 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US7776505B2 (en) * 2001-11-05 2010-08-17 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
US6723488B2 (en) * 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
KR20030055874A (ko) * 2001-12-27 2003-07-04 주식회사 켐써치 트리시클로데카닐 그룹을 갖는 에스테르 유도체를 이용한감광성 고분자 및 이를 이용한 포토레지스트 조성물
KR20040039731A (ko) * 2002-11-04 2004-05-12 주식회사 동진쎄미켐 디사이클로헥실이 결합된 펜던트 기를 가지는 화학적으로증폭된 고분자와 그 제조방법, 및 이를 포함하는 레지스트조성물
JP4222850B2 (ja) 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
WO2004099373A2 (en) * 2003-05-02 2004-11-18 University Of North Carolina At Charlotte Biocompatible resists
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US7250475B2 (en) * 2003-06-26 2007-07-31 Symyx Technologies, Inc. Synthesis of photoresist polymers
DE602004008468T2 (de) * 2003-06-26 2008-05-21 Jsr Corp. Photoresistzusammensetzungen
JP4324433B2 (ja) 2003-09-17 2009-09-02 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI316645B (en) * 2003-09-18 2009-11-01 Tokyo Ohka Kogyo Co Ltd Positive resist composition and resist pattern formation method
US7488565B2 (en) 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4347110B2 (ja) * 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物
US7198873B2 (en) * 2003-11-18 2007-04-03 Asml Netherlands B.V. Lithographic processing optimization based on hypersampled correlations
US7147986B2 (en) * 2004-03-31 2006-12-12 Intel Corporation Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages
JP4448767B2 (ja) * 2004-10-08 2010-04-14 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4580841B2 (ja) * 2005-08-16 2010-11-17 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4533831B2 (ja) * 2005-09-29 2010-09-01 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI475323B (zh) 2006-03-14 2015-03-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
DE602007001356D1 (de) 2006-03-14 2009-08-06 Fujifilm Corp Positive Resistzusammensetzung und Verfahren zur Strukturformung damit
US7914968B2 (en) * 2006-07-24 2011-03-29 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
JP2008052107A (ja) 2006-08-25 2008-03-06 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4905786B2 (ja) 2007-02-14 2012-03-28 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
EP1967904A1 (en) 2007-03-06 2008-09-10 FUJIFILM Corporation Positive resist composition and pattern forming method using the same
JP5039622B2 (ja) 2007-03-30 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP5141106B2 (ja) * 2007-06-22 2013-02-13 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びヒドロキシスチレン誘導体
JP4951464B2 (ja) 2007-10-26 2012-06-13 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法。
JP4961324B2 (ja) 2007-10-26 2012-06-27 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5150296B2 (ja) * 2008-02-13 2013-02-20 富士フイルム株式会社 電子線、ｘ線またはｅｕｖ用ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP5434906B2 (ja) * 2008-03-04 2014-03-05 Ｊｓｒ株式会社 感放射線性組成物及び重合体並びに単量体
US8685616B2 (en) * 2008-06-10 2014-04-01 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
JP5092986B2 (ja) * 2008-08-20 2012-12-05 Ｊｓｒ株式会社 重合体及び感放射線性組成物並びに単量体
TWI503334B (zh) 2009-02-19 2015-10-11 Jsr Corp 聚合物及敏輻射線性組成物、及單體
WO2011040175A1 (ja) 2009-09-30 2011-04-07 Jsr株式会社 重合体及び感放射線性組成物並びに単量体及びその製造方法
WO2011070947A1 (ja) 2009-12-08 2011-06-16 Jsr株式会社 感放射線性樹脂組成物、重合体、単量体及び感放射線性樹脂組成物の製造方法
TWI541226B (zh) 2010-11-15 2016-07-11 羅門哈斯電子材料有限公司 鹼反應性光酸產生劑及包含該光酸產生劑之光阻劑
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法
CN115725015B (zh) * 2022-11-11 2025-10-17 阜阳欣奕华新材料科技股份有限公司 KrF树脂及其制备方法和化学放大型光致抗蚀剂

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JPH08137107A (ja) * 1994-11-10 1996-05-31 Nippon Zeon Co Ltd レジスト組成物
US5700624A (en) * 1995-05-09 1997-12-23 Shipley Company, L.L.C. Positive acid catalyzed resists having an alkali soluble resin with acid labile groups and inert blocking groups
US6013416A (en) 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3751065B2 (ja) * 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
US5962184A (en) 1996-12-13 1999-10-05 International Business Machines Corporation Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent
US6077643A (en) 1997-08-28 2000-06-20 Shipley Company, L.L.C. Polymers and photoresist compositions
US6165678A (en) * 1997-09-12 2000-12-26 International Business Machines Corporation Lithographic photoresist composition and process for its use in the manufacture of integrated circuits
US6057083A (en) 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
US6165674A (en) 1998-01-15 2000-12-26 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
US6312867B1 (en) 1998-11-02 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
US6770413B1 (en) * 1999-01-12 2004-08-03 Shipley Company, L.L.C. Hydroxyphenyl copolymers and photoresists comprising same
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
JP3662774B2 (ja) * 1999-06-02 2005-06-22 東京応化工業株式会社 ポジ型レジスト組成物
JP4127937B2 (ja) * 1999-08-27 2008-07-30 富士通株式会社 レジスト組成物及びレジストパターンの形成方法

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