JP2001160627A - Ｉｉｉ族窒化物系化合物半導体発光素子 - Google Patents

Ｉｉｉ族窒化物系化合物半導体発光素子

Info

Publication number
JP2001160627A
JP2001160627A JP34135799A JP34135799A JP2001160627A JP 2001160627 A JP2001160627 A JP 2001160627A JP 34135799 A JP34135799 A JP 34135799A JP 34135799 A JP34135799 A JP 34135799A JP 2001160627 A JP2001160627 A JP 2001160627A
Authority
JP
Japan
Prior art keywords
layer
quantum well
group iii
compound semiconductor
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP34135799A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001160627A5 (enExample
Inventor
Masayoshi Koike
正好 小池
Shiro Yamazaki
史郎 山崎
Akira Kojima
彰 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP34135799A priority Critical patent/JP2001160627A/ja
Priority to US09/725,496 priority patent/US7084421B2/en
Publication of JP2001160627A publication Critical patent/JP2001160627A/ja
Publication of JP2001160627A5 publication Critical patent/JP2001160627A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP34135799A 1999-11-30 1999-11-30 Ｉｉｉ族窒化物系化合物半導体発光素子 Withdrawn JP2001160627A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP34135799A JP2001160627A (ja) 1999-11-30 1999-11-30 Ｉｉｉ族窒化物系化合物半導体発光素子
US09/725,496 US7084421B2 (en) 1999-11-30 2000-11-30 Light-emitting device using group III nitride group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34135799A JP2001160627A (ja) 1999-11-30 1999-11-30 Ｉｉｉ族窒化物系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2001160627A true JP2001160627A (ja) 2001-06-12
JP2001160627A5 JP2001160627A5 (enExample) 2006-11-09

Family

ID=18345447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34135799A Withdrawn JP2001160627A (ja) 1999-11-30 1999-11-30 Ｉｉｉ族窒化物系化合物半導体発光素子

Country Status (2)

Country Link
US (1) US7084421B2 (enExample)
JP (1) JP2001160627A (enExample)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005210091A (ja) * 2003-12-22 2005-08-04 Showa Denko Kk Ｉｉｉ族窒化物半導体素子およびそれを用いた発光素子
US6989555B2 (en) * 2004-04-21 2006-01-24 Lumileds Lighting U.S., Llc Strain-controlled III-nitride light emitting device
US7291868B2 (en) 2003-08-21 2007-11-06 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device and a method of manufacturing it
JP2009509341A (ja) * 2005-09-14 2009-03-05 インターナショナル レクティファイアー コーポレイション 寄生電流経路を閉塞するために交互の高温層および低温層を用いる超格子の製造方法
US7534638B2 (en) 2006-12-22 2009-05-19 Philips Lumiled Lighting Co., Llc III-nitride light emitting devices grown on templates to reduce strain
US7547908B2 (en) 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US7674643B2 (en) 2003-12-24 2010-03-09 Samsung Electro-Mechanics Co., Ltd. Gallium nitride semiconductor light emitting device and method of manufacturing the same
US7951693B2 (en) 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
JP2012023406A (ja) * 2011-10-28 2012-02-02 Sharp Corp 窒化物半導体発光素子とその窒化物半導体発光素子を備える窒化ガリウム系化合物半導体レーザ素子
JP2013505586A (ja) * 2009-09-17 2013-02-14 ソラア インコーポレーテッド ｛２０−２１｝ガリウム及び窒素含有基板上の低電圧レーザダイオード
JP2013161830A (ja) * 2012-02-01 2013-08-19 Toshiba Corp 半導体発光素子及びその製造方法
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9076926B2 (en) 2011-08-22 2015-07-07 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9105806B2 (en) 2009-03-09 2015-08-11 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
JP2015179868A (ja) * 2012-08-23 2015-10-08 エルジー イノテック カンパニー リミテッド 発光素子、発光素子パッケージ、及び照明システム
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10693041B2 (en) 2009-09-18 2020-06-23 Soraa, Inc. High-performance LED fabrication

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US6953977B2 (en) 2000-02-08 2005-10-11 Boston Microsystems, Inc. Micromechanical piezoelectric device
KR100591705B1 (ko) * 2000-09-21 2006-06-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 그것을 포함한 광학장치
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
GB0128743D0 (en) * 2001-11-30 2002-01-23 Epiic Ltd Method of producing integrated semiconductor components on a semiconductor substrate
DE10392993B4 (de) * 2002-07-29 2011-03-24 National Institute Of Advanced Industrial Science And Technology Thermoelektrisches Material enthaltend Stickstoff
US6969874B1 (en) * 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
JP4727169B2 (ja) * 2003-08-04 2011-07-20 日本碍子株式会社 エピタキシャル基板、当該エピタキシャル基板の製造方法、当該エピタキシャル基板の反り抑制方法、および当該エピタキシャル基板を用いた半導体積層構造
JPWO2005020396A1 (ja) * 2003-08-26 2006-10-19 ソニー株式会社 ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法
US7928424B2 (en) * 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
JP2006032911A (ja) * 2004-06-15 2006-02-02 Ngk Insulators Ltd 半導体積層構造、半導体素子およびｈｅｍｔ素子
TWI408263B (zh) * 2004-07-01 2013-09-11 Sumitomo Electric Industries ＡｌｘＧａｙＩｎ１-ｘ-ｙＮ基板、ＡｌｘＧａｙＩｎ１-ｘ-ｙＮ基板之清潔方法、ＡｌＮ基板及ＡｌＮ基板之清潔方法
US7217947B2 (en) * 2004-08-06 2007-05-15 Northrop Grumman Corporation Semiconductor light source and method of making
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
KR100631981B1 (ko) * 2005-04-07 2006-10-11 삼성전기주식회사 수직구조 ３족 질화물 발광 소자 및 그 제조 방법
JP2007088426A (ja) * 2005-08-25 2007-04-05 Furukawa Electric Co Ltd:The 半導体電子デバイス
JP5011699B2 (ja) * 2005-10-18 2012-08-29 住友電気工業株式会社 窒化物半導体発光素子
KR100639026B1 (ko) * 2005-11-25 2006-10-25 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
JP4948134B2 (ja) * 2006-11-22 2012-06-06 シャープ株式会社 窒化物半導体発光素子
KR100862497B1 (ko) * 2006-12-26 2008-10-08 삼성전기주식회사 질화물 반도체 소자
WO2009039402A1 (en) * 2007-09-19 2009-03-26 The Regents Of The University Of California (al,in,ga,b)n device structures on a patterned substrate
KR101018088B1 (ko) * 2008-11-07 2011-02-25 삼성엘이디 주식회사 질화물 반도체 소자
DE102009004895A1 (de) * 2009-01-16 2010-07-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US9450001B2 (en) * 2009-12-03 2016-09-20 Technion Research & Development Foundation Limited Method and system for detecting light and designing a light detector
JP4929367B2 (ja) * 2010-03-08 2012-05-09 株式会社東芝 半導体発光素子及びその製造方法
US8525148B2 (en) * 2010-07-16 2013-09-03 Micron Technology, Inc. Solid state lighting devices without converter materials and associated methods of manufacturing
EP2408028B1 (en) * 2010-07-16 2015-04-08 LG Innotek Co., Ltd. Light emitting device
CN102820395B (zh) * 2011-06-07 2015-02-18 山东华光光电子有限公司 一种采用势垒高度渐变量子垒的led结构及其制备方法
KR20130011374A (ko) * 2011-07-21 2013-01-30 주식회사 칩테크놀러지 자외선 발광 다이오드용 다중 양자 우물 및 그의 제조 방법
US11025029B2 (en) * 2015-07-09 2021-06-01 International Business Machines Corporation Monolithic III-V nanolaser on silicon with blanket growth
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
DE102017108435A1 (de) * 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode
CN111108657B (zh) 2017-06-30 2022-06-14 奥卢大学 一种光学半导体装置及其制造方法

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US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US6441393B2 (en) * 1999-11-17 2002-08-27 Lumileds Lighting U.S., Llc Semiconductor devices with selectively doped III-V nitride layers

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7291868B2 (en) 2003-08-21 2007-11-06 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device and a method of manufacturing it
JP2005210091A (ja) * 2003-12-22 2005-08-04 Showa Denko Kk Ｉｉｉ族窒化物半導体素子およびそれを用いた発光素子
US7674643B2 (en) 2003-12-24 2010-03-09 Samsung Electro-Mechanics Co., Ltd. Gallium nitride semiconductor light emitting device and method of manufacturing the same
US6989555B2 (en) * 2004-04-21 2006-01-24 Lumileds Lighting U.S., Llc Strain-controlled III-nitride light emitting device
JP2009509341A (ja) * 2005-09-14 2009-03-05 インターナショナル レクティファイアー コーポレイション 寄生電流経路を閉塞するために交互の高温層および低温層を用いる超格子の製造方法
US9157169B2 (en) 2005-09-14 2015-10-13 International Rectifier Corporation Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
US7534638B2 (en) 2006-12-22 2009-05-19 Philips Lumiled Lighting Co., Llc III-nitride light emitting devices grown on templates to reduce strain
US7547908B2 (en) 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US7951693B2 (en) 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
US9105806B2 (en) 2009-03-09 2015-08-11 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US10090644B2 (en) 2009-09-17 2018-10-02 Soraa Laser Diode, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
US9853420B2 (en) 2009-09-17 2017-12-26 Soraa Laser Diode, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
US12327984B2 (en) 2009-09-17 2025-06-10 Kyocera Sld Laser, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces
US11070031B2 (en) 2009-09-17 2021-07-20 Kyocera Sld Laser, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces
JP2013505586A (ja) * 2009-09-17 2013-02-14 ソラア インコーポレーテッド ｛２０−２１｝ガリウム及び窒素含有基板上の低電圧レーザダイオード
US10424900B2 (en) 2009-09-17 2019-09-24 Soraa Laser Diode, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
US9543738B2 (en) 2009-09-17 2017-01-10 Soraa Laser Diode, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
US10693041B2 (en) 2009-09-18 2020-06-23 Soraa, Inc. High-performance LED fabrication
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US12369438B2 (en) 2010-02-03 2025-07-22 Korrus, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9379522B1 (en) 2010-11-05 2016-06-28 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US10637210B1 (en) 2010-11-05 2020-04-28 Soraa Laser Diode, Inc. Strained and strain control regions in optical devices
US9570888B1 (en) 2010-11-05 2017-02-14 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US11715931B1 (en) 2010-11-05 2023-08-01 Kyocera Sld Laser, Inc. Strained and strain control regions in optical devices
US10283938B1 (en) 2010-11-05 2019-05-07 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US11152765B1 (en) 2010-11-05 2021-10-19 Kyocera Sld Laser, Inc. Strained and strain control regions in optical devices
US9786810B2 (en) 2010-11-09 2017-10-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9076926B2 (en) 2011-08-22 2015-07-07 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
JP2012023406A (ja) * 2011-10-28 2012-02-02 Sharp Corp 窒化物半導体発光素子とその窒化物半導体発光素子を備える窒化ガリウム系化合物半導体レーザ素子
JP2013161830A (ja) * 2012-02-01 2013-08-19 Toshiba Corp 半導体発光素子及びその製造方法
JP2015179868A (ja) * 2012-08-23 2015-10-08 エルジー イノテック カンパニー リミテッド 発光素子、発光素子パッケージ、及び照明システム
US9711682B2 (en) 2012-08-23 2017-07-18 Lg Innotek Co., Ltd. Multiple quantum well light emitting device with multi-layer barrier structure
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US10529902B2 (en) 2013-11-04 2020-01-07 Soraa, Inc. Small LED source with high brightness and high efficiency
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency

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