JP2001148378A - プラズマ処理装置、クラスターツールおよびプラズマ制御方法 - Google Patents

プラズマ処理装置、クラスターツールおよびプラズマ制御方法

Info

Publication number
JP2001148378A
JP2001148378A JP33149699A JP33149699A JP2001148378A JP 2001148378 A JP2001148378 A JP 2001148378A JP 33149699 A JP33149699 A JP 33149699A JP 33149699 A JP33149699 A JP 33149699A JP 2001148378 A JP2001148378 A JP 2001148378A
Authority
JP
Japan
Prior art keywords
plasma
processing
gate valve
path
current path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33149699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001148378A5 (https=
Inventor
Mitsuaki Komino
光明 小美野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP33149699A priority Critical patent/JP2001148378A/ja
Priority to PCT/JP2000/007459 priority patent/WO2001041182A1/en
Priority to US09/739,623 priority patent/US20010054484A1/en
Publication of JP2001148378A publication Critical patent/JP2001148378A/ja
Publication of JP2001148378A5 publication Critical patent/JP2001148378A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP33149699A 1999-11-22 1999-11-22 プラズマ処理装置、クラスターツールおよびプラズマ制御方法 Pending JP2001148378A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP33149699A JP2001148378A (ja) 1999-11-22 1999-11-22 プラズマ処理装置、クラスターツールおよびプラズマ制御方法
PCT/JP2000/007459 WO2001041182A1 (en) 1999-11-22 2000-10-25 Plasma processor, cluster tool, and method of controlling plasma
US09/739,623 US20010054484A1 (en) 1999-11-22 2000-12-20 Plasma processor, cluster tool, and method of controlling plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33149699A JP2001148378A (ja) 1999-11-22 1999-11-22 プラズマ処理装置、クラスターツールおよびプラズマ制御方法

Publications (2)

Publication Number Publication Date
JP2001148378A true JP2001148378A (ja) 2001-05-29
JP2001148378A5 JP2001148378A5 (https=) 2006-11-30

Family

ID=18244302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33149699A Pending JP2001148378A (ja) 1999-11-22 1999-11-22 プラズマ処理装置、クラスターツールおよびプラズマ制御方法

Country Status (3)

Country Link
US (1) US20010054484A1 (https=)
JP (1) JP2001148378A (https=)
WO (1) WO2001041182A1 (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002367969A (ja) * 2001-06-12 2002-12-20 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
US6899787B2 (en) 2001-06-29 2005-05-31 Alps Electric Co., Ltd. Plasma processing apparatus and plasma processing system with reduced feeding loss, and method for stabilizing the apparatus and system
JP2006219702A (ja) * 2005-02-09 2006-08-24 Ulvac Japan Ltd プラズマ成膜装置
KR100822462B1 (ko) 2007-12-20 2008-04-16 아셈테크 주식회사 반도체 기판의 에싱장치
JP2009530868A (ja) * 2006-03-23 2009-08-27 アプライド マテリアルズ インコーポレイテッド 大面積基板の均一性を改善する方法及び装置
WO2010079756A1 (ja) * 2009-01-09 2010-07-15 株式会社アルバック プラズマ処理装置
KR100994463B1 (ko) * 2006-04-10 2010-11-16 엘아이지에이디피 주식회사 플라즈마 처리장치
JP2011529136A (ja) * 2008-07-23 2011-12-01 ニュー パワー プラズマ カンパニー，リミティッド 多重基板処理チャンバー及びこれを含む基板処理システム
KR101170626B1 (ko) * 2010-12-30 2012-08-03 엘아이지에이디피 주식회사 플라즈마를 이용한 기판처리장치
KR20200049739A (ko) * 2017-10-26 2020-05-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11049737B2 (en) 2017-10-26 2021-06-29 Semes Co. Ltd. Apparatus and method for treating substrate

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176310A (ja) * 2000-12-06 2002-06-21 Nippon Antenna Co Ltd ２共振アンテナ
US6800172B2 (en) 2002-02-22 2004-10-05 Micron Technology, Inc. Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
US6814813B2 (en) * 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US6858264B2 (en) 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6926775B2 (en) * 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7584942B2 (en) 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP2009088298A (ja) * 2007-09-29 2009-04-23 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP5490435B2 (ja) * 2009-03-31 2014-05-14 東京エレクトロン株式会社 ゲートバルブ装置
JP5700632B2 (ja) * 2010-11-04 2015-04-15 東京エレクトロン株式会社 プラズマ処理装置
CN104851772A (zh) * 2015-04-03 2015-08-19 沈阳拓荆科技有限公司 一种可升降陶瓷挡板结构
TW201823613A (zh) 2016-08-22 2018-07-01 美商應用材料股份有限公司 具有可膨脹密封件之真空腔室

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2644309B2 (ja) * 1988-11-04 1997-08-25 株式会社東芝 半導体製造装置
JP3033787B2 (ja) * 1991-06-04 2000-04-17 キヤノン株式会社 プラズマ処理装置
JPH07106093A (ja) * 1993-03-16 1995-04-21 Applied Materials Inc 改良された弁クロージュアを有するプラズマチャンバ
US6153524A (en) * 1997-07-29 2000-11-28 Silicon Genesis Corporation Cluster tool method using plasma immersion ion implantation

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002367969A (ja) * 2001-06-12 2002-12-20 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
US6899787B2 (en) 2001-06-29 2005-05-31 Alps Electric Co., Ltd. Plasma processing apparatus and plasma processing system with reduced feeding loss, and method for stabilizing the apparatus and system
JP2006219702A (ja) * 2005-02-09 2006-08-24 Ulvac Japan Ltd プラズマ成膜装置
JP2009530868A (ja) * 2006-03-23 2009-08-27 アプライド マテリアルズ インコーポレイテッド 大面積基板の均一性を改善する方法及び装置
KR100994463B1 (ko) * 2006-04-10 2010-11-16 엘아이지에이디피 주식회사 플라즈마 처리장치
KR100822462B1 (ko) 2007-12-20 2008-04-16 아셈테크 주식회사 반도체 기판의 에싱장치
JP2011529136A (ja) * 2008-07-23 2011-12-01 ニュー パワー プラズマ カンパニー，リミティッド 多重基板処理チャンバー及びこれを含む基板処理システム
WO2010079756A1 (ja) * 2009-01-09 2010-07-15 株式会社アルバック プラズマ処理装置
CN102272895A (zh) * 2009-01-09 2011-12-07 株式会社爱发科 等离子体处理装置
JPWO2010079756A1 (ja) * 2009-01-09 2012-06-21 株式会社アルバック プラズマ処理装置
KR101289770B1 (ko) * 2009-01-09 2013-07-26 가부시키가이샤 아루박 플라즈마 처리 장치
KR101170626B1 (ko) * 2010-12-30 2012-08-03 엘아이지에이디피 주식회사 플라즈마를 이용한 기판처리장치
KR20200049739A (ko) * 2017-10-26 2020-05-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11049737B2 (en) 2017-10-26 2021-06-29 Semes Co. Ltd. Apparatus and method for treating substrate
KR102310460B1 (ko) * 2017-10-26 2021-10-13 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Also Published As

Publication number Publication date
WO2001041182A1 (en) 2001-06-07
US20010054484A1 (en) 2001-12-27

Similar Documents

Publication Publication Date Title
JP2001148378A (ja) プラズマ処理装置、クラスターツールおよびプラズマ制御方法
CN114188207B (zh) 基板处理设备
TW202343572A (zh) 電漿處理裝置
CN113223914B (zh) 基板处理设备及基板处理方法
KR20210122209A (ko) 기판 처리 장치 및 기판 처리 방법
KR20210020808A (ko) 기판 처리 방법, 압력 제어 장치 및 기판 처리 시스템
CN101911251A (zh) 用于处理衬底的设备和方法
US20200234970A1 (en) Film etching method for etching film
JP7329131B2 (ja) プラズマ処理装置およびプラズマ処理方法
CN101986777A (zh) 斜面蚀刻工艺之后的铜脱色防止
US12062525B2 (en) Support unit, and apparatus for treating substrate with the same
JP2008235611A (ja) プラズマ処理装置及びプラズマ処理方法
KR102653253B1 (ko) 기판 처리 방법 및 기판 처리 장치
JP5232512B2 (ja) プラズマ処理装置及びプラズマ処理方法
CN116417325A (zh) 电浆产生单元及以该电浆产生单元处理基板的设备
JP2869384B2 (ja) プラズマ処理方法
EP0220901B1 (en) Apparatus for plasma assisted etching
CN112768334B (zh) 基板处理设备
JP4126229B2 (ja) プラズマ生成装置及び方法
CN104701216A (zh) 基板处理设备及基板处理方法
US20080087220A1 (en) Plasma Processing Apparatus and Multi-Chamber System
US20090137128A1 (en) Substrate Processing Apparatus and Semiconductor Device Producing Method
KR102299883B1 (ko) 기판 처리 장치 및 방법
KR20230104497A (ko) 기판 처리 장치 및 기판 처리 방법
JPH09129611A (ja) エッチング方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061018

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061018

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090811

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20091208