JP2001093926A5 - - Google Patents

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Publication number
JP2001093926A5
JP2001093926A5 JP2000212613A JP2000212613A JP2001093926A5 JP 2001093926 A5 JP2001093926 A5 JP 2001093926A5 JP 2000212613 A JP2000212613 A JP 2000212613A JP 2000212613 A JP2000212613 A JP 2000212613A JP 2001093926 A5 JP2001093926 A5 JP 2001093926A5
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Japan
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semiconductor element
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semiconductor
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JP2000212613A
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English (en)
Japanese (ja)
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JP4179736B2 (ja
JP2001093926A (ja
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Priority to JP2000212613A priority Critical patent/JP4179736B2/ja
Priority claimed from JP2000212613A external-priority patent/JP4179736B2/ja
Publication of JP2001093926A publication Critical patent/JP2001093926A/ja
Publication of JP2001093926A5 publication Critical patent/JP2001093926A5/ja
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Publication of JP4179736B2 publication Critical patent/JP4179736B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2000212613A 1999-07-16 2000-07-13 半導体素子実装済部品の製造方法及び半導体素子実装済完成品の製造方法 Expired - Fee Related JP4179736B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000212613A JP4179736B2 (ja) 1999-07-16 2000-07-13 半導体素子実装済部品の製造方法及び半導体素子実装済完成品の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-202847 1999-07-16
JP20284799 1999-07-16
JP2000212613A JP4179736B2 (ja) 1999-07-16 2000-07-13 半導体素子実装済部品の製造方法及び半導体素子実装済完成品の製造方法

Publications (3)

Publication Number Publication Date
JP2001093926A JP2001093926A (ja) 2001-04-06
JP2001093926A5 true JP2001093926A5 (https=) 2005-06-09
JP4179736B2 JP4179736B2 (ja) 2008-11-12

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ID=26513604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000212613A Expired - Fee Related JP4179736B2 (ja) 1999-07-16 2000-07-13 半導体素子実装済部品の製造方法及び半導体素子実装済完成品の製造方法

Country Status (1)

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JP (1) JP4179736B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529319B2 (ja) * 2001-06-27 2010-08-25 日亜化学工業株式会社 半導体チップとその製造方法
JP5035580B2 (ja) * 2001-06-28 2012-09-26 ナガセケムテックス株式会社 弾性表面波デバイスおよびその製法
JP2003092311A (ja) * 2001-09-17 2003-03-28 Nagase & Co Ltd 突起電極付ｉｃチップの実装方法
JP2003092310A (ja) * 2001-09-17 2003-03-28 Nagase & Co Ltd 封止樹脂付突起電極付ｉｃチップとその製造方法
US7176055B2 (en) 2001-11-02 2007-02-13 Matsushita Electric Industrial Co., Ltd. Method and apparatus for manufacturing electronic component-mounted component, and electronic component-mounted component
DE10250541B9 (de) * 2002-10-29 2004-09-16 Infineon Technologies Ag Elektronisches Bauteil mit Unterfüllstoffen aus Thermoplasten und Verfahren zu dessen Herstellung
JP2004152982A (ja) 2002-10-30 2004-05-27 Matsushita Electric Ind Co Ltd 電子部品実装済部品の製造方法、及び該電子部品実装済部品を備えた電子部品実装済完成品の製造方法、並びに電子部品実装済完成品
EP3547380B1 (en) * 2010-02-09 2023-12-20 Nichia Corporation Light emitting device
WO2011145794A1 (ko) 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
CN103003966B (zh) * 2010-05-18 2016-08-10 首尔半导体株式会社 具有波长变换层的发光二级管芯片及其制造方法，以及包括其的封装件及其制造方法

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