JP2001036101A - 改良された半導体構造を備える光導電性スイッチ - Google Patents

改良された半導体構造を備える光導電性スイッチ

Info

Publication number
JP2001036101A
JP2001036101A JP2000178910A JP2000178910A JP2001036101A JP 2001036101 A JP2001036101 A JP 2001036101A JP 2000178910 A JP2000178910 A JP 2000178910A JP 2000178910 A JP2000178910 A JP 2000178910A JP 2001036101 A JP2001036101 A JP 2001036101A
Authority
JP
Japan
Prior art keywords
layer
photoconductive
semiconductor material
confinement layer
energy band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000178910A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001036101A5 (OSRAM
Inventor
Thomas S Low
トーマス・エス・ロウ
Yasuhisa Kaneko
泰久・金子
Mitsuchika Saito
光親・斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2001036101A publication Critical patent/JP2001036101A/ja
Publication of JP2001036101A5 publication Critical patent/JP2001036101A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
JP2000178910A 1999-06-21 2000-06-14 改良された半導体構造を備える光導電性スイッチ Pending JP2001036101A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/337,045 US6252221B1 (en) 1999-06-21 1999-06-21 Photo-conductive switch having an improved semiconductor structure
US337045 1999-06-21

Publications (2)

Publication Number Publication Date
JP2001036101A true JP2001036101A (ja) 2001-02-09
JP2001036101A5 JP2001036101A5 (OSRAM) 2007-08-02

Family

ID=23318876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000178910A Pending JP2001036101A (ja) 1999-06-21 2000-06-14 改良された半導体構造を備える光導電性スイッチ

Country Status (4)

Country Link
US (1) US6252221B1 (OSRAM)
EP (1) EP1063708B1 (OSRAM)
JP (1) JP2001036101A (OSRAM)
DE (1) DE60027642T2 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008098576A (ja) * 2006-10-16 2008-04-24 Yokogawa Electric Corp 光導電スイッチ

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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US6589335B2 (en) * 2001-02-08 2003-07-08 Amberwave Systems Corporation Relaxed InxGa1-xAs layers integrated with Si
US6403990B1 (en) * 2001-03-27 2002-06-11 Agilent Technologies, Inc. Short turn-off time photoconductive switch
US20030042404A1 (en) * 2001-09-05 2003-03-06 The Boeing Company III-Nitride laser activated semiconductor switch and associated methods of fabrication and operation
US6621071B2 (en) * 2001-09-07 2003-09-16 Raytheon Co. Microelectronic system with integral cryocooler, and its fabrication and use
JP3589662B2 (ja) * 2002-01-07 2004-11-17 松下電器産業株式会社 面型光変調器およびその製造方法
US6707236B2 (en) 2002-01-29 2004-03-16 Sri International Non-contact electroactive polymer electrodes
US7173295B1 (en) * 2002-06-17 2007-02-06 Sandia Corporation Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches
JP2004047560A (ja) * 2002-07-09 2004-02-12 Olympus Corp 光導電スイッチモジュール
JP2004047561A (ja) * 2002-07-09 2004-02-12 Olympus Corp 光導電スイッチモジュールおよびその製造方法
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
JP5126875B2 (ja) * 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
WO2009006318A1 (en) 2007-06-29 2009-01-08 Artificial Muscle, Inc. Electroactive polymer transducers for sensory feedback applications
EP2239793A1 (de) 2009-04-11 2010-10-13 Bayer MaterialScience AG Elektrisch schaltbarer Polymerfilmaufbau und dessen Verwendung
US9240506B2 (en) * 2009-12-08 2016-01-19 Lawrence Livermore National Security, Llc Transparent ceramic photo-optical semiconductor high power switches
US9553254B2 (en) 2011-03-01 2017-01-24 Parker-Hannifin Corporation Automated manufacturing processes for producing deformable polymer devices and films
TW201250288A (en) 2011-03-22 2012-12-16 Bayer Materialscience Ag Electroactive polymer actuator lenticular system
US10490713B2 (en) 2011-09-22 2019-11-26 Sensor Electronic Technology, Inc. Ultraviolet device encapsulant
US9562171B2 (en) * 2011-09-22 2017-02-07 Sensor Electronic Technology, Inc. Ultraviolet device encapsulant
EP2828901B1 (en) 2012-03-21 2017-01-04 Parker Hannifin Corporation Roll-to-roll manufacturing processes for producing self-healing electroactive polymer devices
US9761790B2 (en) 2012-06-18 2017-09-12 Parker-Hannifin Corporation Stretch frame for stretching process
WO2014066576A1 (en) 2012-10-24 2014-05-01 Bayer Intellectual Property Gmbh Polymer diode
US9455366B2 (en) 2013-03-15 2016-09-27 Lawrence Livermore National Security, Llc Sol-gel process for the manufacture of high power switches
US9543462B2 (en) * 2015-03-20 2017-01-10 Xi'an University Of Technology Insulated-gate photoconductive semiconductor switch
CN111129178B (zh) * 2019-12-26 2021-09-07 西安交通大学 一种基于石墨烯界面层的体结构GaAs光导开关及其制备工艺
CN113823700B (zh) * 2021-09-16 2024-03-29 西安交通大学 一种氮化镓光导半导体开关及其制备方法
CN113990967B (zh) * 2021-10-25 2023-04-28 中国工程物理研究院流体物理研究所 一种堆栈结构GaAs光导开关及制作方法和冲激脉冲源
WO2025215343A1 (en) * 2024-04-09 2025-10-16 The University Of Bristol Radio frequency device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6255969A (ja) * 1985-09-05 1987-03-11 Nec Corp 光導電型半導体受光素子
JPS63100782A (ja) * 1986-10-17 1988-05-02 Nec Corp 半導体受光素子
JPS6444073A (en) * 1987-08-11 1989-02-16 Hikari Gijutsu Kenkyu Kaihatsu Photoconductive photodetector
JPS6473683A (en) * 1987-09-14 1989-03-17 Mitsubishi Electric Corp Infrared detection element
JPH08148715A (ja) * 1994-11-15 1996-06-07 Fujitsu Ltd 光半導体装置および半導体光集積回路装置
JP2000183373A (ja) * 1998-12-11 2000-06-30 Mitsubishi Cable Ind Ltd 光導電素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216192A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Luminous diode and its producing method
EP0543391B1 (en) * 1991-11-22 2000-08-30 Canon Kabushiki Kaisha Photoelectric conversion device and method of driving the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6255969A (ja) * 1985-09-05 1987-03-11 Nec Corp 光導電型半導体受光素子
JPS63100782A (ja) * 1986-10-17 1988-05-02 Nec Corp 半導体受光素子
JPS6444073A (en) * 1987-08-11 1989-02-16 Hikari Gijutsu Kenkyu Kaihatsu Photoconductive photodetector
JPS6473683A (en) * 1987-09-14 1989-03-17 Mitsubishi Electric Corp Infrared detection element
JPH08148715A (ja) * 1994-11-15 1996-06-07 Fujitsu Ltd 光半導体装置および半導体光集積回路装置
JP2000183373A (ja) * 1998-12-11 2000-06-30 Mitsubishi Cable Ind Ltd 光導電素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008098576A (ja) * 2006-10-16 2008-04-24 Yokogawa Electric Corp 光導電スイッチ

Also Published As

Publication number Publication date
DE60027642D1 (de) 2006-06-08
DE60027642T2 (de) 2007-05-03
EP1063708B1 (en) 2006-05-03
EP1063708A2 (en) 2000-12-27
EP1063708A3 (en) 2003-08-13
US6252221B1 (en) 2001-06-26

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