JP2001007095A - Surface treatment method and apparatus thereof, method and apparatus for manufacturing semiconductor device, and method of manufacturing liquid crystal display - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make an apparatus small and movable, which does not need a low pressure environment, enhance the treating ability at a low cost, reduce damages to a work and locally treat the surface of the work, as needed. SOLUTION: A prescribed gas is introduced in a dielectric material gas passage 2 according to the purpose. A high frequency voltage is applied to cause the gas to undergo gaseous discharge in a gas at the atmospheric pressure or nearby pressure thereof in the gas passage 2, a flow of active seeds of the gas resulting from the discharge is formed, and a work 11 is exposed to this flow to treat its surface.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment technique for removing or modifying inorganic or organic substances by etching or ashing the surface of a material to be treated or improving the wettability by modifying the surface. It is used as a pre-processing or post-processing of a mounting process, for sealing an electronic component with a resin, or for forming a film on a semiconductor surface.

[0002]

2. Description of the Related Art Conventionally, with the development of semiconductor technology, various technologies have been known for this type of surface treatment. For example, as a method for removing organic substances such as flux used for soldering when mounting electronic components, a wet cleaning method using an organic solvent, irradiation with ozone, ultraviolet rays, etc., causing a chemical reaction to the organic substances. There is a dry cleaning method to remove. However, in the wet method, a rinsing step of removing the cleaning agent after washing the organic substance and a step of drying the substrate,
In addition, there is a problem that fixed equipment is required to execute the above, which requires a great deal of time and labor and increases the manufacturing cost. Further, in the cleaning by the wet method, the cleaning agent may affect the electronic components. Further, in the dry method, a sufficient cleaning effect cannot be expected because the ability to remove organic substances having a large molecular weight is particularly low.

For this reason, recently, a method has been developed in which plasma is generated in a vacuum and organic and inorganic substances are removed using the plasma. For example, JP-A-58-14714
No. 3 discloses that when a plastic package of an IC chip is used, the surface of the lead frame is treated with oxygen gas activated by microwave discharge under reduced pressure to improve the adhesion between the lead frame and the resin. A method for improving reliability is disclosed. In addition, Japanese Unexamined Patent Application Publication No.
In the surface mounting method of an electronic component described in JP-A-116837, an oxide is removed by introducing a hydrogen gas of 1 to 10 Torr into a plasma etching apparatus and discharging. Further, JP-A-5-160170 discloses that
A method is disclosed in which a high-frequency voltage is applied to an electrode in a decompressed processing chamber to generate argon oxygen plasma or hydrogen reduction plasma, thereby etching a lead frame.

It is known that plasma CVD, ashing, etching, and surface treatment can be performed by generating a plasma using a rare gas and a small amount of a reaction gas under atmospheric pressure. These often generate a discharge between the high-frequency electrode and the workpiece. On the other hand, Japanese Patent Laid-Open Publication No. Hei 3-133125 discloses that a gas containing a fluoride is discharged at atmospheric pressure and a substrate is exposed to the gas or sprayed in an ozone atmosphere. Japanese Patent Application Laid-Open No. 4-145139 discloses a method of performing ashing by plasma discharge treatment of a surface of a fluorine-based member at atmospheric pressure in a helium gas atmosphere to make the surface hydrophilic and suitable for adhesion. A method for modifying a surface is disclosed.

[0005]

However, in the above-mentioned conventional surface treatment technology using plasma discharge,
JP-A-58-147143 and JP-A-4-116837.
When discharging in a decompressed environment such as
Special equipment such as vacuum chambers and vacuum pumps are required, which makes the entire equipment larger and more complex, and is more expensive and costly, and it is difficult to perform on-site work and local processing. was there. In addition, it is necessary to reduce and maintain the pressure in the chamber to a predetermined pressure during the discharge, and the processing itself takes a long time, for example, the processing can be performed only about twice per hour. However, there is a problem that it is not possible to perform in-line processing because single-wafer processing is difficult but batch processing is possible. Furthermore,
In a plasma discharge in a vacuum or under reduced pressure, electrons and ions are larger than excited species. Therefore, when used for surface treatment of a semiconductor device, damage to electronic components is increased.

[0006] On the other hand, the method of performing plasma discharge under atmospheric pressure is advantageous in that no vacuum equipment is required.
When a discharge is generated between the electrode and the material to be processed, the discharge state is likely to be non-uniform, which may cause damage to the material to be processed. The material of the material is limited. In particular, when the shape of the material to be processed is complicated or the unevenness is large, the shape of the electrode becomes correspondingly complicated, discharge occurs locally, and the recessed portion cannot be processed sufficiently. There was a problem.

[0007] Even in the case of discharging between the electrodes, Japanese Patent Laid-Open No.
The method of 133125 is for removing a resist from a substrate after patterning, and is arranged in a quartz cell in order to expose a material to be processed to an excitation gas. Processing is difficult. Also, it is not suitable for local ashing or etching.In particular, in the case where electronic components are sealed with resin or when a defective chip is removed from a semiconductor device and a non-defective product is remounted, a surface treatment may be actually performed. Can not. In the atmospheric pressure plasma discharge disclosed in Japanese Patent Application Laid-Open No. 4-145139, a material to be processed is accommodated in a processing chamber in which electrodes are opposed to each other, and an expensive helium gas is constantly supplied for processing. Becomes larger. For this reason, it is difficult to perform in-line processing, and it is not suitable for local discharge treatment or on-site work. In addition, since the electrodes are disposed in the processing chamber in which the discharge is generated, the electrodes are easily damaged by the discharge, and a problem is likely to occur in the durability.

Therefore, the surface treatment method of the present invention has been made in view of the above-mentioned conventional problems, and its object is to eliminate the need for vacuum or decompression equipment and to simplify the apparatus. Ashing, etching, and drying can be performed safely at atmospheric pressure or a pressure close to it and without causing thermal or electrical damage to the material to be processed, regardless of its shape or material. A surface treatment method that can perform cleaning and improvement of wettability, can locally treat the material to be treated, can be in-lined, and can be used in the field, has low cost, and has a high treatment capacity. To provide. Further, the object of the present invention is
An object of the present invention is to provide a surface treatment apparatus for realizing the above-described surface treatment method.

Another object of the present invention is to enhance the bondability between an electronic component and a lead in the manufacture of a packaged semiconductor device by connecting an electronic component and a lead and encapsulating them with a resin. In addition, it is possible to improve the wettability of these with the resin to enhance the adhesion, improve the yield, and manufacture a highly reliable packaged semiconductor device. A method that can be realized at a low cost by a relatively simple configuration, can reduce the size of the apparatus, has little damage to electronic components and has a high processing capability, and can perform single-wafer processing and in-line processing. It is to provide a device.

In particular, in the conventional wet cleaning method in ILB (inner lead bonding) for connecting an IC chip to a tape carrier, it is relatively troublesome to remove dirt attached to the inner lead surface and the chip bonding surface. A step of cleaning them before joining them is not generally performed. In some cases, a polyimide resin film remains on the tape carrier. For this reason, the inner lead and the IC chip cannot be joined well, and the adhesion to the mold resin is poor at the time of resin encapsulation in a later step, which is one of the causes of lowering the yield. Therefore, still another object of the present invention is to provide a tape carrier and an IC chip that can be easily and inexpensively surface-treated in an ILB, thereby improving the bonding between the inner lead and the IC chip, and improving the moldability. An object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor device, which can improve the yield by improving the adhesion to a resin and can easily perform such surface treatment in-line.

In the manufacture of a semiconductor device, when a plurality of electronic components are mounted and a defective electronic component is removed and a non-defective electronic component is mounted again, it is conventionally difficult to perform a partial surface treatment. All the electronic components are removed and remounted, which requires a great deal of labor and cost. Therefore, in the method of manufacturing a semiconductor device according to the present invention, only the part to be re-bonded is subjected to a surface treatment, and the adhesive or brazing agent locally remaining without affecting the electronic components and the like mounted on other parts. Stable and easy removal of dirt from materials, etc., and at the same time improving wettability, enabling good connection of good-quality electronic components.Furthermore, the processing speed is fast and suitable for on-site processing. The purpose is to provide a method that can be reduced.

Further, in manufacturing a liquid crystal display, a cleaning process is performed several times during the manufacturing process in order to eliminate dust causing display defects, which is the biggest problem. Cleaning methods include wet cleaning with a detergent and UV-
Dry cleaning such as ozone cleaning is performed. Further, from the viewpoint of environmental protection when an organic solvent is used, the above-described dry cleaning by oxygen plasma discharge in a vacuum is also employed. However, as described above, processing in a vacuum environment makes it difficult to perform single-wafer processing due to problems in the structure and cost of the apparatus. Batch processing is usually performed for several hundred sheets except for large panels. In addition, the entire panel is always processed. In addition, since the number of sheets processed at one time is determined in consideration of the post-process including the problem of pot life, production management is difficult, and it is difficult to reduce the cost simply by increasing the number of sheets processed. Therefore, still another object of the present invention is to provide a relatively simple and low-cost cleaning process, to reduce the size of the apparatus, to achieve a high processing speed, and to perform single-wafer processing. It is an object of the present invention to provide a method which can realize production, can give flexibility to production management, and can perform on-site processing.

When a polarizing plate is attached to a liquid crystal cell, it is necessary to perform a pretreatment for removing flux, scribe residues, fingerprint stains, and the like scattered from the liquid crystal cell surface during patterning of the substrate. Conventionally, these treatments have been cleaned using chlorine-based solvents.However, the solvent after cleaning has a large effect on the environment, so it is common to use a cutter or cleaning tape to manually remove dirt manually. However, the liquid crystal panel may be physically damaged. In addition, there is a method in which the liquid crystal panel is covered with a protective film in advance, and the liquid crystal panel is peeled off and a polarizing plate is attached, but this increases the cost. Therefore, another object of the present invention is to
In the pretreatment for attaching the polarizing plate to the liquid crystal panel,
It is an object of the present invention to provide a method which is relatively simple, has a low processing cost, has a high processing capability, and has no possibility of causing physical damage to a liquid crystal panel.

[0014]

According to a first aspect of the present invention, a predetermined gas is introduced into a gas flow path formed of a dielectric material. Introduces a gas discharge in a given gas at or near atmospheric pressure in the gas flow path, and exposes the material to be treated to active species of the gas generated by this discharge to treat the surface. A surface treatment method is provided.

As described above, according to the surface treatment method of the present invention, a plasma state is generated by introducing a gas under a pressure near the atmospheric pressure and discharging the gas in the gas flow path. Large equipment is not required, handling and treatment of introduced gas and material to be treated are relatively easy, the equipment can be miniaturized so that it can be moved, and depending on the type of introduced gas used, material to be treated Can be subjected to a surface treatment such as cleaning, etching, ashing, or modification to improve wettability. Moreover, since the discharge is not directly performed between the material to be processed, the thermal effect on the material to be processed is small, and since the material to be processed is irradiated with the gas containing the active species, electrons generated by the discharge can be reduced. The ions collide with molecules in the atmosphere and lose their energy, so that damage to the material to be processed is reduced and the processing speed can be increased.

In one embodiment, a gas discharge is generated by applying a high-frequency voltage to an electrode provided outside a gas flow path made of a dielectric material. Thus, it is possible to prevent the electrode from being damaged by the discharge, and to use the high frequency power supply to make the discharge more uniform and to reduce the damage to the material to be processed.

In another embodiment, a gas discharge can be generated by a non-polar discharge by microwaves. Thereby, a plasma state can be easily generated in the introduced gas under the atmospheric pressure.

The surface of the material to be treated can be exposed by applying a gas stream containing active species, instead of directly exposing the surface to a gas discharge. This makes it possible to further reduce damage to the material to be processed, and even when the material to be processed has a complicated shape or large irregularities, by applying a gas flow containing active species, all parts of the material to be processed can be treated. Necessary and effective surface treatment can be performed.

In one embodiment, the material to be treated is located near the outlet of the gas flow path. As a result, the introduced gas containing the gas active species flows out from the outlet of the gas flow path, so that the surface of the material to be treated placed under the atmospheric pressure can be easily exposed, and the shape of the outlet is changed, for example, A gas outlet can be formed or a plurality of gas outlets can be formed according to the shape and size of the processing material or the shape, position and area of the portion to be processed. In addition, the active species of the gas generated by the discharge can be transferred to the vicinity of the material to be processed, which is far away from the gas flow path, and the material to be processed can be exposed to the active species of the gas. Thereby,
The material to be treated can be disposed at a position separated from the discharge generating position to perform the surface treatment, and it is possible to cope with a change in the material to be treated and a change in use conditions, so that workability can be improved. Further, in these cases, the gas flow can be applied to the surface of the material to be processed via the pipe connected to the outlet of the gas flow path, and the workability is further improved.

In another embodiment, in the above-described surface treatment method, the gas flow can be applied to the surface of the material to be treated through the metal mesh, and even if the gas generated by the gas discharge is contained in the gas flow. Can be trapped by the metal mesh, so that damage to the material to be processed can be more reliably eliminated. Further, gas discharge can be generated by using the metal mesh as a ground electrode, a plasma state is generated at a position closer to the material to be processed, and surface treatment can be performed more effectively.

In another embodiment, the surface of the material to be treated can be selected and partially exposed to gaseous species,
As a result, the material to be processed can be locally surface-treated as necessary without affecting or damaging other portions.

According to the present invention, the predetermined gas contains a rare gas at least at the start of gas discharge. Due to the presence of the rare gas, gas discharge at atmospheric pressure can be more easily generated.

In one embodiment, the predetermined gas is helium,
Either nitrogen or compressed air. In this way, the introduction gas can be appropriately selected according to the purpose and cost performance of the surface treatment. When helium is used, the wettability is improved, etching and ashing are performed at a high processing speed, and nitrogen is used as a base. When compressed air is used, improvement of wettability and ashing can be performed relatively inexpensively.

In another embodiment, the predetermined gas contains helium or nitrogen and oxygen, and the material is relatively inexpensively and effectively ashed or wetted by adjusting the oxygen concentration appropriately. Can be improved.

In another embodiment, the predetermined gas includes helium or compressed air and a fluorine compound. Due to the presence of the fluorine compound, the material to be processed can be etched relatively inexpensively and effectively.

In one embodiment, the predetermined gas is composed of 100% of a rare gas, and the reactive gas existing in the vicinity of the material to be processed is activated by gas discharge, and the surface of the material to be processed is exposed to the active species. be able to. This facilitates the generation of gas discharge at atmospheric pressure due to the presence of the rare gas, and the energy exchange with the radical species generated thereby generates active species of the reactive gas near the material to be treated, and the reactive gas becomes Even if it is difficult to discharge under atmospheric pressure,
Desired surface treatment can be performed.

Here, if the reaction gas is contained in the atmosphere near the material to be treated, the atmosphere near the material to be treated is used as the reaction gas, so that it can be used inexpensively and easily for surface treatment. it can. Further, the reaction gas can be forcibly introduced into the vicinity of the material to be treated, and the surface treatment can be effectively performed by supplying the reaction gas corresponding to the purpose only to the vicinity of the material to be treated.

Further, according to the present invention, the material to be treated can be exposed to a gas containing active species in the presence of moisture.
By subjecting the material to be treated to surface treatment by adding water, the treatment speed can be increased. In particular, when the material to be treated is exposed to a gas stream in water, wet cleaning or etching becomes possible, and the gas used can remove static electricity, for example, as an environment of only O ₃ (ozone) by using a gas. Alternatively, the etching can be performed more effectively in an environment containing only HF.

In one embodiment, the material to be treated is cooled or heated to protect it from the high heat of electric discharge by cooling the material to be treated according to the properties and material of the material to be treated and the situation and purpose of the surface treatment. Or heating to increase the processing speed.

Further, it is possible to cool an electrode to which a high-frequency voltage is applied and / or a part of the gas flow path exposed to the discharge, thereby protecting the gas flow path made of the dielectric material from high heat due to the discharge. it can.

In still another embodiment, different portions of the surface can be continuously processed while moving the material to be processed. This makes it possible to perform surface treatment flexibly and efficiently in accordance with the size and shape of the material to be treated and the position and size of the part to be treated, and sequentially moving a plurality of materials to be treated. Surface treatment can be performed.

According to another aspect of the present invention, a gas flow path formed of a dielectric material, a means for introducing a gas into the gas flow path, and a gas pressure at or near atmospheric pressure in the gas flow path. There is provided a surface treatment apparatus comprising: means for generating a gas discharge in a gas under pressure; and means for exposing a material to be processed to a gas containing active species generated by the discharge.

With such a relatively simple structure that does not require a vacuum device or a processing chamber for accommodating the material to be processed, the entire device can be made compact and movable to the site, and the gas flow path can be reduced. Dry cleaning, etching, and ashing at high speed and with less damage to the material by surface-treating the material placed under atmospheric pressure by the discharge generated under pressure near atmospheric pressure Or the wettability can be improved.

In one embodiment, the gas discharge generating means comprises an electrode provided outside the gas flow path and means for applying a high frequency voltage to the electrode. Since the electrodes are arranged outside the gas flow path in this way, they are not damaged by electric discharge,
In addition, by using a high-frequency power supply, uniform discharge and reduction of damage to a material to be processed can be achieved.

Further, the electrode can be provided relatively movably outside the gas flow path. Thereby, the position of the discharge region in the gas flow path can be changed, and the condition for generating the discharge can be easily adjusted according to the material to be processed.

In another embodiment, the gas discharge generating means can generate a non-polar discharge by microwaves, and can easily generate a plasma state in the introduced gas under atmospheric pressure.

In still another embodiment, the gas discharge generating means has a grounded counter electrode, and gas discharge can be performed between the gas discharge generating means and an electrode provided outside the gas flow path. There is no possibility that a direct discharge occurs between the power supply electrode and the material to be processed, and damage to the material to be processed can be further reduced.

In one embodiment, the means for exposing the material to be processed to the gas containing the active species comprises an outlet of a gas flow channel for jetting the gas as a gas stream. Even if the surface of the material to be treated has a complicated shape or large irregularities, by forcibly sending the active species due to the discharge as a gas flow,
The surface treatment can be reliably and effectively performed on any part, and the outlet of the gas flow path can be formed according to the shape of the material to be treated and the position and size of the part to be treated.

In this case, if a pipe for guiding the gas flow from the outlet of the gas flow path to the vicinity of the material to be processed is further provided, surface treatment can be performed at a position separated from the gas flow path via the pipe. , Workability can be improved.

In another embodiment, the means for exposing the material to be processed to the gas containing active species has a metal mesh disposed between the outlet of the gas flow path and the material to be processed. By trapping electrons and ions generated by the discharge by the metal mesh, the metal mesh can be effectively removed from the gas flow containing the active species, and damage to the material to be processed can be eliminated.

Further, when the metal mesh is grounded and a gas discharge is caused between the metal mesh and the electrode, the metal mesh is discharged as a ground electrode at a position closer to the material to be treated, so that active species can be more effectively collected. The material to be treated can be irradiated.

In one embodiment, there is further provided a mask means for selectively exposing the surface of the material to be treated to a gas containing active species. This masking means makes it possible to easily subject the material to be processed locally and locally without affecting or damaging other parts.

According to the present invention, the surface treatment apparatus further includes a means for introducing a reaction gas into the vicinity of the material to be treated, and the gas introduced into the gas flow path by the gas introduction means is a rare gas. It is 100%, and the reactive gas can be activated by the gas discharge of the rare gas. Due to the presence of the rare gas, a gas discharge is easily generated under the atmospheric pressure, and the reactive gas supplied near the material to be processed using the active species can be more easily discharged even under the atmospheric pressure even if the gas is difficult to discharge. It can be in a plasma state.

Further, according to the present invention, the surface treatment apparatus may further include means for causing the gas containing the active species to contain moisture, or may further include means for supplying moisture to the surface of the material to be treated. it can. Thereby, the surface treatment speed can be increased by adding moisture when exposing the material to be treated to the gas active species.

In some embodiments, the apparatus may further include means for supplying moisture to the gas introduced into the gas flow path.
By including moisture in the gas introduced into the gas flow path, when the material to be treated is exposed to a gas containing active species, there is no possibility that undesired dew condensation will occur on the surface of the material to be treated.

Further, the surface treatment apparatus of the present invention is configured such that the material to be treated is placed in water and exposed to a gas containing active species in water, whereby wet cleaning or etching is performed, Depending on the gas used, for example, the vicinity of the material to be processed can be removed, for example, as an environment of only O ₃ (ozone) to remove static electricity, or can be more effectively etched as an environment of only HF.

Further, in some embodiments, a means for cooling or heating the material to be treated is provided, and the material to be treated is cooled to protect it from the high heat of electric discharge as required, or to increase the processing speed by heating. Can be. In another embodiment, the apparatus includes means for applying an RF voltage and / or means for cooling a portion of the gas flow path exposed to the discharge, protecting the gas flow path comprising a dielectric material from high heat due to the discharge, Can be improved in durability.

In another embodiment, the means for exposing the gas containing active species and the material to be treated are relatively movable. By relatively moving the material to be processed, any part thereof can be uniformly or partially selected and processed according to the size, shape and processing purpose of the material to be processed. Can be processed while sequentially moving the material to be processed.

In still another embodiment, when the frequency of the voltage applied to the electrode is 13.56 MHz or less, this electrode is connected via a coaxial cable to an impedance etching circuit connected to a high frequency voltage power supply. I have. By connecting the electrodes and the impedance matching circuit via the coaxial cable in this manner, the device can be easily moved.

Further, according to the present invention, by using the above-mentioned surface treatment technology, when a package type semiconductor device is manufactured by joining an electronic component and a lead and encapsulating with a resin, a dielectric material is used. A predetermined gas is introduced into the gas flow path formed in the step, and a gas discharge is generated in the predetermined gas under the atmospheric pressure or a pressure close thereto in the gas flow path, and the activity of the gas generated by the discharge is increased. A method for manufacturing a semiconductor device, comprising: performing a surface treatment step of exposing at least one of a joined electronic component and a lead to a seed before resin-sealing the joined electronic component and the lead. Is done.

By performing the surface treatment with the gas containing the active species generated by the gas discharge under the pressure near the atmospheric pressure, the electronic component and / or the lead, or both, can be relatively easily and at a high speed and at a low cost. Of the surface, and also remove the organic and inorganic substances attached to them,
The wettability with the resin for sealing can be improved, and good adhesion can be achieved.

In one embodiment, when connecting the electronic component and the inner lead of the tape carrier, a surface treatment step can be performed after the connection and before the resin sealing. As a result, even in the case of such an ILB (inner lead bonding), the resin for encapsulating the same can be satisfactorily adhered.

Further, according to the present invention, when a package-type semiconductor device is manufactured by similarly joining an electronic component and a lead and encapsulating the same with a resin, a dielectric material is required before joining the electronic component and the lead. A predetermined gas is introduced into a gas flow path formed of a body material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure close thereto in the gas flow path, and the gas discharge is generated by the discharge. A surface treatment step of exposing at least one of the joined electronic component and the lead to an active species of the gas.

As a result, it is possible to relatively easily and inexpensively remove organic substances and inorganic substances from the respective joining surfaces of the electronic component and the lead and to improve the wettability. In addition, when the resin is sealed in a later step, the adhesion to the resin can be improved.

Also in this case, in the ILB step of connecting the electronic component and the inner lead of the tape carrier, a surface treatment step can be performed before connecting the electronic component and the inner lead of the tape carrier. Also, a good bonding state can be obtained.

According to the present invention, in order to manufacture a package-type semiconductor device by encapsulating the joined electronic components and leads with a resin, a surface treatment section for surface treating the joined electronic components and leads. And a resin sealing portion for enclosing the electronic components and leads surface-treated by the surface treatment portion with a resin, wherein the surface treatment portion comprises a gas flow path formed of a dielectric material, A means for introducing a gas into the passage, a means for generating a gas discharge at or near atmospheric pressure in the gas flow path, and a gas containing an active species generated by the discharge. Means for exposing at least one of the electronic component and the lead.

As described above, with a relatively simple configuration that does not require a vacuum device or the like, the size of the entire device can be reduced, and surface treatment can be performed easily and at high speed in the atmosphere. In-line with the resin sealing step can be easily achieved.

Further, according to the present invention, a surface treatment section for surface-treating at least one of an electronic component and a lead to be joined before the joining, and a bonding for joining the electronic component and the lead. A gas passage formed of a dielectric material, a means for introducing a gas into the gas passage, and a gas passage under atmospheric pressure or a pressure close to the atmospheric pressure. A means for generating a gas discharge in the gas, and a means for exposing at least one of an electronic component and a lead to a gas containing active species generated by the discharge. Is done.

With such a relatively simple structure and at a low cost, the organic and inorganic substances can be removed from the joint surfaces of the electronic parts and the leads, and the wettability can be improved, so that they can be satisfactorily joined. In addition, in-line processing is facilitated because the treatment is performed in the atmosphere.

In one embodiment, when the electronic component is connected to the inner lead of the tape carrier, the surface treatment section performs surface treatment on the inner lead of the tape carrier fed from the reel before the bonding section. It has become. Thus, a good bonding state can be obtained even in the ILB process between the electronic component and the tape carrier, and the adhesion with the resin can be enhanced when the resin is sealed in a later process.

According to another aspect of the present invention, in a manufacturing process of assembling a module by connecting a driving circuit and a power supply circuit after attaching a polarizing plate to a liquid crystal cell, a gas formed of a dielectric material is used. A predetermined gas is introduced into the flow path, a gas discharge is generated in the predetermined gas at or near the atmospheric pressure in the gas flow path, and the substrate is exposed to gas active species generated by the discharge. A method of manufacturing a liquid crystal display is provided, which includes a surface treatment step of causing the liquid crystal display to have a surface treatment. With such a relatively simple configuration, the substrate can be dry-cleaned at a high speed, the cost can be reduced, and single-wafer processing can be performed.

According to the present invention, similarly, after the polarizing plate is attached to the liquid crystal cell, the polarizing plate is attached to the liquid crystal cell in the manufacturing process of connecting the driving and power supply circuits and assembling the module. Before, a predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure near the gas flow in the gas flow path. Wherein a surface treatment step of exposing the liquid crystal cell to the gas active species generated by the method is provided.

As a result, organic substances adhering to the liquid crystal cell
Inorganic dirt can be removed at a relatively high speed, easily and at low cost without physically damaging the liquid crystal panel surface, and the polarizing plate can be effectively prevented from sticking defects. Leaf processing and on-site processing become possible.

Further, according to the present invention, in the manufacture of a semiconductor device having a plurality of electronic components mounted thereon, a method of removing defective electronic components, replacing them with non-defective electronic components, and re-mounting the same is provided. After that, a predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path. A surface treatment step of exposing at least one of a non-defective electronic component and a connection part of a semiconductor device from which a defective product has been removed is performed on the generated gas active species, and thereafter, a non-defective electronic component is connected. The method for manufacturing a semiconductor device described above is provided.

Thus, after the defective electronic component is removed, only the parts necessary for rejoining the non-defective parts are selected, and the other parts are relatively easily affected, and if necessary. Surface treatment can be performed on site.

[0066]

FIG. 1 schematically shows the structure of a preferred embodiment of a surface treatment apparatus according to the present invention. A so-called gun type surface treatment apparatus 1 for generating a gas discharge has a thin dielectric tube 2 made of quartz having a substantially cylindrical shape. The dielectric tube 2 has a pair of high-frequency electrodes 3a and 3b arranged on the outer peripheral surface near the center thereof so as to face each other with the dielectric tube 2 interposed therebetween, and constitutes a so-called capacitively-coupled discharge structure. . The electrodes 3a and 3b are completely covered on the outside with an insulator 4, and a thin metal case 5 is mounted on the outside so as to surround the entire dielectric tube 1. Dielectric tube 2
A gas inlet 6 is provided at the upper end of the gas supply device 7.
And a gas outlet 9 is opened downward at the lower end. Immediately below the gas outlet 9, a metal mesh 10 integrally connected to the metal case 5 is arranged. Below the gas outlet 9 and the metal mesh 10, a material 11 to be treated, such as a substrate, is disposed with its surface to be treated facing upward.

The one electrode 3a is connected to an impedance matching circuit 14 via a coaxial cable 13 and to a high frequency power supply 15 via the circuit. One end of the mesh metal wire on the outer periphery of the coaxial cable 13 is grounded via a connector of the impedance matching circuit 14, and the other end is connected to the other electrode 3 b or the metal case 5. The electrode 3b is electrically connected to the metal case 5 by, for example, a screw 16 screwed from the outside, whereby the metal case 5, the electrode 3b, and the metal mesh 10 are grounded. This is to prevent electric shock due to a potential generated on the surface of the insulator 4 and to reduce the influence of a high-frequency electric field on a human body caused by high-frequency leakage. still,
The core of the coaxial cable 13 is connected to one high-frequency electrode 3 a that is not electrically connected to the case 5, and a high-frequency voltage is applied from a power supply 15. By grounding the metal case 5 and the metal mesh 10 with the coaxial cable 13 in this way, the surface treatment apparatus 1 of the present invention is particularly suitable.
When used in the field, in addition to ensuring safety when the power frequency used is low, it can be configured to be integrally movable as a gun type, so that workability is improved. If there is no inconvenience in operation, it is of course possible to ground the metal mesh 10 by another method.

A predetermined gas is supplied from the device 7 to the gas inlet 6 through the flexible tube 8 to replace the inside of the dielectric tube 2 with the predetermined gas. When a high frequency voltage is applied from the power supply 15 to one of the electrodes 3a,
A gas discharge is generated inside the dielectric tube 2 between a and 3b. Various reactions such as dissociation, ionization, and excitation of the gas by the plasma are present in the gas in the region 17 in the discharged state, and active species such as excited species and ions of the gas are generated by these reactions. . Since the gas is continuously supplied from the gas supply device 7 to the gas inlet 6, the gas containing the active species flows from the gas outlet 9 toward the surface of the workpiece 11 as a reactive gas flow. It is gushing.

Although the high-frequency electrode pairs 3a and 3b are fixed so as to be relatively immovable with respect to the dielectric tube 2 in FIG. 1, according to another embodiment of the present invention, the outer periphery of the dielectric tube 2 is fixed in the axial direction. It can be slidably mounted on. Therefore,
The position where the gas discharge occurs in the dielectric tube 2 and the discharge area can be easily changed so as to approach or move away from the gas ejection port 9 along the axial direction.
Accordingly, the surface treatment is performed by taking into account the type of gas introduced from the gas supply device 7 or the use conditions such as the influence of the material to be treated 11 upon direct exposure to radiant heat of the discharge or electrode and active species. Can be adjusted.

Naturally, the emission of the discharge near the high-frequency electrodes 3a and 3b is strong, and when the applied high-frequency power increases, the discharge region 17 expands inside the dielectric tube 1.
When the electrodes 3a and 3b are located in the vicinity of the gas ejection port 9, the discharge jumps out of the gas ejection port 9 to cause a phenomenon like a plasma torch. This phenomenon can also be promoted or suppressed by controlling the applied high-frequency power and the flow rate of oxygen or helium contained in the introduced gas. For example, for helium, at a certain flow rate, the phenomenon peaks, and for oxygen, when the flow rate is excessive, the discharge itself becomes not arc discharge but glow discharge.

Further, since the high-frequency electrodes 3a and 3b are arranged outside the dielectric tube 2 and are not exposed to plasma as described above, the electrodes are prevented from being consumed, and influences such as contamination of the material to be processed due to sputtering are prevented. be able to. In addition, during continuous use over a long period of time, it is possible to reduce the thermal effect of the radiation heat of the electrodes 3a and 3b on the material to be processed.

Since the metal mesh 10 is provided at the gas jet port 9 as described above, ions and electrons in the plasma contained in the gas flow are trapped and neutrized, and the adverse effects of the ions on the material 11 to be processed are eliminated. Can be prevented beforehand. However, when there is substantially no electrical damage due to ions due to the material to be processed, or when there is no danger of electric shock due to the working conditions, the structure of the apparatus, and the like, the metal mesh 10 may not be necessarily provided.

When the metal mesh 10 is provided at a position close to the gas ejection port 9, when the electrode pairs 3 a and 3 b are brought close to the gas ejection port 9, the capacitance integrated type is provided between the electrode 3 a on the power supply side and the metal mesh 10. Gas discharge occurs. Further, gas discharge may occur alternately between the power supply electrode 3a, the ground electrode 3b, and the metal mesh 10 at least partially due to the influence of the applied power, the flow rate of the introduced gas, the flow rate ratio, and the like.
Such a phenomenon is the same even when the surface of the metal mesh 10 is covered with an insulator. However, in this case, arc discharge between the power supply side electrode 3a and the metal mesh 10 is prevented. However, if the insulator covering the metal mesh 10 is thick,
The ion trap effect, which is the original purpose, is reduced.

When the metal mesh 10 was not provided, the effect of the discharge on the material to be processed due to the discharge jumping out of the gas outlet 9 was examined. The potential difference between the material to be processed and the ground potential was measured using an oscilloscope while changing the power frequency of the high-frequency power source 7 to determine the potential of the electrically floating metal exposed to the discharge. The results are shown below. Here, Vdc is the potential when DC is applied, and Vp-p is the potential when AC is applied.

(Power frequency) (Measurement potential) 13.56 MHz Vdc = 1 V, Vp-p = 3 V 400 kHz Vdc = −20 V, Vp-p = 10 V 20 kHz Vdc = −20 V, Vp-p = 30 V For 400 kHz or less, a large pulse potential of 50 V or more was occasionally measured. From these results, when a person comes into direct contact with the discharge region 17 or performs processing while holding an electrically floating metal in his / her hand, it is necessary to preventively use some commonly used electric shock prevention means. Is preferred. The same applies to the case where the material to be processed is easily affected by electrical damage.

On the other hand, when the metal mesh 10 is provided, the voltages Vdc and Vp-
Both p become 0 V, and safe processing of both the human body and the material to be processed is possible. However, especially when the power frequency is 40
In the case of 0 kHz or less, care must be taken because if the applied power is increased, the discharge region 17 may jump out of the metal mesh 10 to further widen or arc.

Further, according to the present invention, the material to be processed 11, which is the material to be processed, can be cooled or heated. Such heating and cooling of the material to be treated 11 may be performed by indirectly controlling the temperature of the material to be treated 11 by heating the holder 2 with a sheath heater or cooling it with a water pipe. The material to be treated 11 may be heated to 200 ° C. or more depending on conditions due to electric discharge, gas flow to be ejected, or radiant heat of the electrode 3. Therefore, when it is necessary to protect the processing target material 11 against heat, the processing is performed while cooling the processing target material 11. On the other hand, when the material to be processed 11 does not require protection against heat, heating should be actively performed.
Since the present invention is a kind of reduction treatment method using a chemical reaction, the reaction is often promoted by heating. Further, when the discharge treatment according to the present invention is performed while the solder and the component are mounted on the material to be processed 11 and heated above the melting point of the solder, the soldering can be performed simultaneously with the surface treatment.

As another heating method, a light source such as a halogen lamp can be used. According to this method, it is possible to quickly heat the surface to be cleaned, not only to reduce time loss, but also to relatively easily heat the material to be processed, even if the material to be processed has a complicated shape with severe irregularities. Further, light of a short wavelength, that is, ultraviolet light may be irradiated using the light source. In this case, not only a heating effect but also an effect of breaking a chemical bond of an organic substance to further improve the cleaning ability can be obtained.

When performing the discharge treatment for a long time, it is preferable to cool the high-frequency electrodes 3a and 3b. This is for cooling the dielectric tube 2 directly exposed to the discharge, and various known methods are conceivable. For example, when a water-cooled pipe or the like is used as a method for cooling the high-frequency electrodes 3a and 3b, it is necessary to use an insulating water-cooled pipe, and its length is 30 cm or more in consideration of water conductivity. It is desirable that

In the above-described embodiment, when removing organic substances such as flux from the surface of the material to be treated 11, ultraviolet rays are applied to the surface of the material to be treated 11 by ultraviolet light generating means disposed near the material to be treated 11. Irradiation may be used to supplementally decompose organic substances, or to directly heat or cool the processing target material 11 by supplying hot air or cold air by blowing means. Further, by further providing the blowing means or the means for vibrating the material to be processed 11, particles covered with an organic substance such as a resist can be removed at the same time.

By exposing to the active species generated in the introduced gas by the gas discharge using the surface treatment apparatus 1 described above, the surface of the material to be treated 11 is modified and the wettability is greatly improved. The voltage applied to the electrodes 3a, 3b is 13.56 MHz, depending on the type of the introduced gas.
It is advantageous to use a high frequency voltage of a few tens of kHz, for example 20 kHz. As the gas introduced into the dielectric tube 2 from the gas supply device 7, any gas can be used as long as it does not adversely affect the material to be processed, such as a rare gas such as helium, nitrogen, compressed air, and oxygen. . However,
For example, when oxidation is not preferable for the material to be processed 11, it is preferable to use a gas other than oxygen.

Further, when it is desired to remove an organic substance attached to the surface of the material to be processed 11, for example, a flux remaining after soldering, a mixed gas of helium and oxygen can be introduced from the gas supply device 7. As a result, active species such as oxygen ions and excited species are generated, which react with the organic substance to form carbon monoxide, carbon dioxide, and water vapor and leave the surface of the material to be treated. This reaction gas is applied to the material 1 to be treated.
1 can be exhausted by a duct disposed in the vicinity.

For example, in one embodiment, a mixed gas of helium and oxygen is used as the introduced gas, the flow rates of helium and oxygen are respectively 20 SLM and 200 SCCM, and the flow rate ratio of oxygen is about 1%. And frequency 1
A high frequency voltage of 3.56 MHz was applied with a power of 80 W. A little bluish white discharge (plasma) was generated inside the dielectric tube 2. In this case, the generated active species are oxygen radicals. The material to be treated 11 uses a ceramic substrate (7059 glass manufactured by Corning Incorporated) and a novolak-based resist (OFPR-
800) was applied for 1 micron and baked. The organic resist reacts with oxygen radicals contained in the gas stream to form water vapor, carbon dioxide, and the like, which are removed from the surface of the material to be processed.

Also, when a mixed gas of compressed air and nitrogen and oxygen is used in place of a mixed gas of helium and oxygen as a discharge gas, an effect of removing organic substances, that is, an ashing effect can be similarly obtained. Further, even when the introduced gas is a single rare gas, an ashing effect can be obtained similarly.

For example, only helium gas is supplied into the dielectric tube 2 through the flexible tube 8 to generate a discharge of only helium gas, and a gas flow containing the active species is ejected from the gas outlet 9. Oxygen radicals are generated by energy exchange between atmospheric oxygen present in the vicinity of the gas outlet 9 and the metal mesh 10 and between the metal mesh 10 and the target material 11 and helium radicals generated by electric discharge, thereby performing ashing. Do. Therefore, in this case, it is better to control the discharge region 17 so as to protrude from the gas ejection port 9 toward the material 11 to be processed.
Removing 0 removes more effective ashing. According to this method, since the discharge inside the dielectric tube 2 is performed only with the rare gas, contamination or the like inside the dielectric tube 1 is prevented or suppressed, and not only is the discharge stability over a long period of time obtained, but also Since there is no need to supply oxygen as a reaction gas, there is an advantage in cost.

Nitrogen and fluorine compounds (C
An oxide, for example, a CuO oxide film formed on a copper pad surface can be removed from the surface of the processing target material 11 by using a gas containing an organic substance, such as F ₄ , C ₂ F ₆ , or SF _6. . In this case, the oxide reacts with an active species such as a nitrogen ion or an excited species to form a nitrogen oxide, or reacts with an active species such as a fluorine ion or an excited species to form a fluoride to be treated. Move away from the surface of the material 11. In the case of a gas containing an organic substance, the oxide on the surface of the material to be treated dissociates the organic substance, ionizes, an organic substance generated by excitation, carbon, an ion of hydrogen, reacts with an active species such as an excited species, a hydroxy compound, It becomes oxo compound carboxylic acid, carbon dioxide, water vapor, etc., and leaves the surface of the material to be treated.

The same effect can be obtained by applying the organic substance to the surface of the material 11 to be treated. In this case, the gas is dissociated, ionized, and excited by the plasma in the discharge region 17 to increase the energy state. The organic substance applied to the surface of the material to be treated is partially evaporated and exposed to electric discharge to dissociate, ionize, and excite to become active species such as organic substances, carbon and hydrogen ions, and excited species. Another part receives energy from an active species of a gas having a high energy state, and dissociates, ionizes, and excites it to become an active species such as an ion of an organic substance, carbon, hydrogen, or an excited species. By these active species, the same operation and effect as in the case of using a gas to which an organic substance is added can be obtained. In addition, this active species does not remain on the surface of the material to be treated unlike the chlorine compound contained in the flux.

Similarly, as a gas capable of obtaining an etching effect of removing oxides from the surface of the processing target material 11, there is, for example, helium or a mixed gas of compressed air and carbon tetrafluoride (CF ₄ ). Further, oxygen may be used instead of compressed air. Carbon tetrafluoride has an effect of suppressing the spread of the discharge. If the carbon tetrafluoride is excessively added, the localization becomes severe inside the dielectric tube 2, and the discharge region 17 hardly jumps out of the gas outlet 9. . However, once the discharge region 17 once protrudes from the gas ejection port 9, the discharge region 17 spreads over the surface of the material to be processed 11, thereby expanding the etching region.

In this example, when the flow rate of the mixed gas was 20 SLM for helium and 100 SCCM for CF ₄ , the etching rate was about 10 μm / min. When about 100 SCCM of oxygen was added as a mixed gas, the etching rate was increased. For example, a fluorine compound (for example, CF ₄ ) is added to helium in an amount of 0.5.
５5%, preferably 1%, oxygen 0.5-5%, preferably 1
It has been confirmed by the inventor of the present invention that the etching effect is maximized when the mixed gas system contains%.

In general, when a high-frequency voltage is applied using a rare gas such as helium at or near atmospheric pressure, a gas discharge is likely to occur, and the discharge may damage the uniformly exposed members. Can be reduced, but the cost is increased because the gas itself is expensive. Therefore, only at the start of discharge, a rare gas such as helium or argon, which easily causes a discharge, is introduced from the gas supply device 7, and after a voltage is applied to generate a discharge, the gas is changed to another appropriate inexpensive gas. You can also. In another method, a rare gas such as helium and a mixed gas of, for example, oxygen, CF _4, or a reactive gas such as CF ₄ and oxygen are supplied from a gas supply device 7 to a gas inlet 6 through a flexible tube 8. At the time when the discharge is generated, the supply of only the rare gas is stopped. Then, only the reaction gas is discharged. In this case, the discharge is maintained, but the form is likely to be arc discharge.

For example, in a mixed gas of helium and oxygen, the discharge can be started with a lower applied power when the oxygen flow rate ratio is smaller. However, even if the flow rate of oxygen is small, discharge becomes difficult to occur when the flow rate of helium is reduced. Further, in terms of sustaining the discharge, the smaller the oxygen flow rate ratio, the longer the discharge similar to a clean glow discharge. As the oxygen flow rate is increased, the discharge region 17 is localized, and eventually shifts to a hoss corona or changes to a form such as an arc discharge accompanied by a loud noise. When a discharge such as the arc discharge occurs, the temperature of the portion of the dielectric tube 2 adjacent to the discharge region 17 increases. Once the discharge starts, the discharge continues even at the oxygen flow rate ratio where it is difficult to start the discharge. However, when the dielectric tube 2 was made as thin as possible, 15 mm or less in this embodiment, and its thickness was thinner, 1 mm or less in this embodiment, a large number of hos coronas were observed without shifting to arc discharge.

As described above, it is also possible to use only a reaction gas or a mixed gas of nitrogen and a reaction gas from the beginning without using any rare gas. In particular, a stable hose corona can be obtained by reducing the power supply frequency of the high-frequency power supply 15. For example, when a high frequency voltage of 20 kHz is used, the discharge can be started by compressed air. In this method, even if the inside of the dielectric tube 2 shifts to arc discharge, the processing speed does not decrease so much.
By paying attention to the cooling of the substrate, the heat resistant temperature of the material to be treated 11, and the like, the running cost can be considerably reduced.
This method is suitable mainly when the material to be treated is resistant to thermal and electrical damages and low cost treatment is desired, and contributes to the chlorofluorocarbon-free and triethane-less activities for global environmental protection. .

FIG. 2 shows a modification of the embodiment shown in FIG. 1 having a reactive gas supply means separately from the gas supply device 7. The reactive gas supply means includes a gas conduit 18 opening between the gas outlet 9 and the metal mesh 10. A rare gas, for example, only helium is supplied from the gas supply device 7 to the dielectric tube 2 to generate a discharge of only the helium gas. On the other hand, the reactive gas supply means may supply oxygen for ashing, compressed air for improving wettability, or CF ₄ or a mixed gas of CF ₄ and oxygen for etching, depending on the purpose of processing. Is supplied from the gas conduit 18 to the region between the gas outlet 9 and the metal mesh 10. Reactive species are generated by energy exchange between the helium radicals generated by the gas discharge and emitted as a gas flow from the gas outlet and the reactive gas, thereby performing the surface treatment of the workpiece 11. Naturally, it is better to remove the metal mesh 10
More efficient surface treatment is possible.

As described above, according to the present invention, the surface of the material to be treated is dry-cleaned and reformed to greatly improve wettability, oxides are removed by etching, or flux or the like remaining after soldering. Can easily and surely be removed. Further, according to the present invention, these effects can be further enhanced by adding water to the reactive gas containing the active species. In particular, it has been confirmed by the present inventor that the etching effect significantly increases the processing speed. For example, in order to remove the CuO film on the surface of the copper pad of the substrate, using a mixed gas of helium and oxygen tetrafluoride and adding water such as water vapor to the gas, it takes about 20 minutes to add no water. The removal operation that had been performed could be realized in only about 20 seconds.

FIGS. 13 to 15 show specific structures for adding water so as to enhance the effect of the discharge treatment according to the present invention. In the embodiment shown in FIG. 13, a bypass is provided in the middle of a pipe 72 for supplying a gas from the gas supply device 7 to the surface treatment device 71, and a branch is provided. Send to The tank 74 contains water, preferably pure water 75.
Is stored and heated by the heater 76 to easily generate water vapor. The gas introduced into the tank 74 is returned to the pipe 72 again containing water vapor, mixed with the gas directly supplied from the gas supply device 7, and supplied to the surface treatment device 71.

[0096] By including moisture in the gas sent to the surface treatment apparatus 71 in this manner, there is no danger of dew formation on the material to be treated, which is convenient. The amount of water to be added is determined by the opening of the valve 73 and the heater 76.
It is adjusted by adjusting the temperature of the water 75 in 4.

In another embodiment shown in FIG. 14, an atomizer 77 is provided in the middle of a pipe 72 leading from the gas supply device 7 to the surface treatment device, and water 75 is supplied from a tank 74 to the atomizer. Thereby, moisture can be added to the gas sent to the processing apparatus. In this case, a heater similar to that of the embodiment shown in FIG.
7 can also promote atomization of water. Further, a blowing means and a conduit are provided separately from the gas supply device 7 and the pipe 72, and the water atomized by the atomizer 77 is forcibly directly sent to the surface treatment device, for example, by the first device.
It can also be fed into the dielectric tube 2 in the embodiment.

In the embodiment shown in FIG.
5 is heated by a heater 76 to generate steam,
8 allows direct supply to the vicinity of the surface of the material to be subjected to the discharge treatment. In this case, dew condensation may occur on the surface of the material to be processed having a relatively low temperature. However, if there is a possibility that the dew condensation may have an undesirable effect on the material to be processed, the pipe 78 may be connected to the surface processing apparatus. Alternatively, the gas can be added to the gas before the discharge occurs by connecting the gas to the gas 72 or in the middle of the pipe 72.

Further, according to the present invention, it is possible to perform a discharge treatment on a material to be treated of various materials such as a metal and a resin material, and a good result can be obtained even with an oxide such as glass or ITO. It has been confirmed that For glass materials, it should be noted that excellent wettability can be obtained when only nitrogen is used as a discharge gas, so that, for example, a solder precoat is formed on the glass surface of a liquid crystal panel in advance. In addition, an IC chip or the like can be directly mounted without connecting via a TAB substrate. Also, in the case where the manufacturer name and the model number are silk-screen printed on the outer surface of the resin package of the resin-sealed electronic component, the surface treatment of the present invention can be performed before or after printing to prevent ink adhesion. Can be better.

FIG. 3 shows a second embodiment of the surface treatment apparatus according to the present invention. A high-frequency electrode 3 for applying high-frequency power is mounted around the entire circumference of the dielectric tube 2, and the outside thereof is covered with an insulator 4, and a metal cover 19 is further provided on the outside thereof with a metal cover 19. Is provided to accommodate the As in the embodiment of FIG.
Has a gas inlet 6 at its upper end and a gas outlet 9 at its lower end. At the lower end of the metal cover 19, the gas jet 9
The metal mesh 10 is integrally connected to a lower position. The high-frequency electrode 3 is connected to a high-frequency power supply (not shown) via an impedance matching circuit (not shown). The metal cover 19 and the metal mesh 10 are grounded. The connection between the electrode 3 and the power supply and the grounding of the metal cover 19 can be performed via a coaxial cable as in the first embodiment. When the inside of the dielectric tube 2 is replaced with a gas introduced from the gas inlet 6 and a high frequency voltage is applied to the electrode 3 from the power source, a gas discharge occurs between the electrode and the grounded metal mesh 10. Then, while trapping ions by the metal mesh 10, a gas flow containing the active species of the introduced gas is applied to the material 11 to be subjected to surface treatment.

By taking such a discharge form,
It has been confirmed in experiments performed by the inventor of the present invention that the processing speed can be improved without causing electrical damage to the material to be processed while ensuring safety.

In the second embodiment, the metal mesh 10
May not be provided. In this case, it is possible to generate a discharge between the high-frequency electrode 3 and the object 11 to be treated as a grounded electrode. This type of discharge is effective when the material to be treated can ignore the electrical damage, or when the surface treatment device is housed in some case to ensure safety.

FIG. 4 shows a third embodiment of the surface treatment apparatus according to the present invention. This surface treatment device 20 includes a glass tube 21 having a coaxial double structure instead of the dielectric tube 2 of the first embodiment. The inner glass tube 22 has an upper end open and a lower end closed, and the outer glass tube 2
3 has an upper end closed to define an annular empty space 24 between itself and the inner glass tube 22, and a gas outlet 9 is opened at a lower end of a generally conical shape. Further, a gas inlet is provided at the upper end of the annular empty chamber 24, and is connected to an external gas supply device.

A round rod-shaped high-frequency electrode 25 is inserted into and removed from the inner glass tube 22 through its upper end opening. The electrode 25 is connected to a high frequency power supply via an impedance matching circuit by a coaxial cable, as in the first and second embodiments. A conical electrode 26, which is grounded as a counter electrode of the high-frequency electrode 25, is attached to the entire outer periphery of the outer peripheral surface of the conical lower portion of the outer glass tube 23. When a gas is introduced into the annular space 24 from the gas inlet and a high frequency voltage is applied to the electrode 25, gas discharge occurs between the power supply side electrode 25 and the ground electrode 26 in the annular space. The position of the discharge region 27 can be moved and adjusted in the same manner as in the first embodiment by changing the position of the distal end of the electrode 25 by pulling it out or inserting it into the inner glass tube 22.

In each of the embodiments described above, the capacitively-coupled discharge type is adopted. However, the same operation and effect can be obtained by the inductively-coupled type discharge form or the non-polar discharge by short-wavelength microwave. can get. However, when microwaves are used, it is difficult to connect the impedance matching circuit and the high-frequency electrode by a coaxial cable, and there is a possibility that the convenience of work as a gun type used in the field may be impaired. Further, in each of the above-described embodiments, the gas ejection port is made thinner, or a mask means is provided between the gas ejection port (or the metal mesh) and the article 11 to be treated, whereby the surface of the article to be treated is provided. It is possible to limit the processing.

FIG. 5 schematically shows three embodiments of a surface treatment apparatus employing an inductively coupled discharge type. The embodiment shown in FIG. 5A includes a discharge tube 28 made of an elongated, generally cylindrical dielectric material. The horizontally arranged discharge tube 28 is provided with a gas inlet 29 communicating with a gas supply device at one end, and the other end is closed. A coil-shaped electrode 30 connected to a high-frequency power source is wound around the entire circumference of the discharge tube 28 over substantially the entire length. An insulator is coated on the outside of the coil electrode 30, and a metal cover covers the entire discharge tube 28 on the outside. Further, the discharge tube 28 is provided with a plurality of gas ejection ports 31 on the outer periphery thereof in a straight line along the axial direction. In such a configuration, when the coil electrode 30 applies a high-frequency voltage, gas discharge occurs such that the discharge region 32 spreads over the entire inside of the discharge tube 28. Then, a gas flow containing active species due to the discharge is jetted from each gas jet port 31 toward the surface of the material to be processed.

In the modified embodiment of FIG. 5B, a discharge tube 28 made of a dielectric material is vertically arranged, and a coil electrode 30 is wound around the outer periphery thereof. A gas inlet (not shown) is provided at the upper end of the discharge tube 28, and a gas outlet 31 is formed at the lower end at each of a plurality of branched ends. In this configuration, since the discharge region 32 is formed at a position separated from the gas outlet 31, even if a metal mesh is not provided in the gas outlet 31, electrical damage to the material to be processed and safety to a human body can be prevented. There is no need to consider.

In another embodiment shown in FIG. 5C, the lower end of the discharge tube 28 around which the coil electrode 30 is wound also forms a gas outlet 31 which expands in a horn shape. This allows
A relatively small discharge region 32 allows a large area of the material to be treated at a time. Further, in the case where the surface treatment is performed in an environment where the surroundings of the material to be processed are not affected, the gas ejection port 31 can be completely covered with the material to be processed, which is convenient.

FIG. 6 schematically shows a processing apparatus 33 suitable for locally discharging a material to be processed as needed on site. The processing device 33 has a so-called gun-type structure so that an operator can carry it with his / her hand if necessary, and a discharge generating unit 35 is provided inside a cylindrical nozzle 34 having an opening at its tip. Have been. Discharge generator 35
Has a basic structure similar to that of each of the above-described embodiments, and is connected to a gas supply device and a power supply (not shown), and a reactive gas flow containing active species generated by discharge flows from a lower portion of the discharge generating unit 35. Is guided by the tip opening 36 of the nozzle 34 and is ejected toward the surface of the processing target material 11.

FIG. 7A shows a surface treatment apparatus 40 in which a discharge generating section 37 and a nozzle section 38 for jetting a reactive gas flow are separately provided, and these are connected by a flexible tube 39. The discharge generating section 37 is built in a fixed or movable main body 41 in which a power supply, a gas supply device and the like (not shown) are integrated, and a reactive gas flow generated there is supplied through a flexible tube 39. The nozzle section 27 squirts the material to be processed 11. Flexible tube length is 5m or preferably 2m
To a certain extent, the active species can effectively reach the material to be treated. By separately providing the nozzle portion 38 in this manner, workability is improved, and the processing capability of the device 40 can be increased as necessary.

The nozzle section 38 is connected to the flexible tube 3
9 is detachably attached to the tip of the device 9. FIG. 7B shows such a replaceable nozzle section 42. FIG.
The nozzle section 38 of FIG. 7A has a relatively large disk shape and can process a large area at a time, whereas the nozzle section 4 of FIG.
2 is rectangular and is suitable for processing relatively small parts. By appropriately replacing the nozzle portion in this way, it is possible to easily cope with a change in an object to be processed and a use condition, and to improve work flexibility.

As described above, according to the present invention, the surface treatment apparatus and the material to be treated can be relatively easily moved, so that a large number of parts can be treated or treated at one time. It is possible to increase the obtained area. When the frequency of the high-frequency power supply used is 13.56 MHz or less, the impedance matching circuit and the high-frequency electrode are connected by a coaxial cable 13 so that movement is particularly easy, and an automated field system using a robot or the like is used. Becomes possible.

FIG. 8 shows an embodiment of a so-called line type surface treatment apparatus capable of treating the surface of a material to be treated linearly at one time. The surface treatment device 43 includes a pair of thin dielectric plates 44 made of quartz opposed to the left and right at a fixed narrow interval. A narrow space defined between the two dielectric plates 44 along the longitudinal direction thereof is closed at both front and rear ends, and forms a gas inlet 45 whose upper opening is connected to a gas supply device. At the same time, the lower opening is formed such that the lower portion of each of the dielectric plates 44 is inclined inward, so that a narrow gas outlet 46 extending in the longitudinal direction is formed. Further, according to another embodiment, the gas ejection port 46 can be formed by a number of small nozzles arranged in a straight line.

A pair of high-frequency electrode plates 47 extending along the entire length in the longitudinal direction are disposed on the outer surfaces of the two dielectric plates 44 so as to face each other. The outside of the high-frequency electrode plate 47 is covered with an insulator 48, and a metal cover 49 is attached outside the cover for the purpose of protecting the electrode plate 47 and shielding electromagnetic waves. As in the case of the first embodiment, the electrode plate pairs 47 are slidable in all directions on the outer surface of the dielectric plate 44 while facing each other. Therefore, between the empty space between the dielectric plates 44, the position where the gas discharge occurs and the discharge region thereof can be easily changed. Further, the metal cover 49 may be structured so as to cover the entire surface treatment device 43.

The one electrode plate 47 is connected to an impedance matching circuit and a high-frequency power supply via a coaxial cable as in the above-described embodiment. The other electrode plate 47
Is electrically connected to the metal cover 49 and is grounded via a mesh metal on the outer periphery of the coaxial cable. Further, both electrode plates 47 are provided with a cooling means in preparation for continuous processing for a long time. Further, a metal mesh (not shown) can be disposed below the gas ejection port 46 between the gas discharge port 46 and the material to be processed, and can be connected to the metal cover 49 and grounded.

When the chamber is replaced by introducing a gas from the gas inlet 45 and a high-frequency voltage is applied to the electrodes 47, the dielectric plate 44 is provided between the electrodes 47 in the chamber and in the vicinity thereof.
, A gas discharge is generated over the entire length in the longitudinal direction. The reactive species of the gas activated by the discharge is applied to the surface of the workpiece 11 disposed below the gas outlet 46. In the present embodiment, with the above configuration, the processing target material 11 is processed linearly, and by moving the processing target material 11 and the processing device 43 relatively, a large area can be processed. Also, in this case, naturally, a non-polar discharge by microwave can be used instead of the high-frequency discharge.

When the position of the electrode plate 47 is moved downward along the outer surface of the dielectric plate 44 so as to approach the gas outlet 46, the discharge jumps out from the gas outlet, and the material 11 to be treated 11 Will be directly exposed to the activated active species. When the electrode plate 47 is moved upward to separate the discharge region from the gas outlet 46, the reactive species is exposed to the material 11 as a gas flow flowing out of the gas outlet.

To remove organic substances such as flux remaining on the surface of the material to be treated 11 using the surface treatment apparatus 43 of this embodiment, a mixed gas of, for example, helium and oxygen is introduced into the empty chamber. Introduce. In this embodiment, the thickness 1
helium and oxygen flow rates of 20 SLM and 200 SCCM, respectively, an oxygen flow rate ratio of about 1%, and 13.56 MHz. High frequency voltage of 80
By applying a power of W, the surface of the ceramic substrate coated with the resist was treated. Oxygen radicals were generated as reactive species by the discharge, and reacted with the resist on the substrate to be removed as water vapor, carbon dioxide, and the like.

FIG. 9 shows another embodiment of the line type surface treatment apparatus, which has a sectional structure similar to that of the embodiment of FIG. Two vertical inner glass plates 50 which are opposed to each other at a fixed narrow interval so as to have a substantially U-shaped cross-section and are joined at the lower end; And two vertical outer glass plates 51 facing each other. Section U defined between inner glass plate 50 and outer glass plate 51
The V-shaped vacant space extends over its entire length along the longitudinal direction, and has a plurality of gas inlets 52 connected to a gas supply device at its upper end, and each outer glass plate at its lower end. The lower part of 51 is inclined inward, and a gas outlet 53 having a constant narrow width is formed linearly over the entire length in the longitudinal direction, similarly to the embodiment of FIG.

[0120] Inside the inner glass plate 50, a thin plate-like high-frequency electrode 54 extending over the entire length in the longitudinal direction is provided.
However, the upper end of the T-shape is engaged with the upper end of the inner glass plate 50 so as to be detachably inserted. A thin plate-like electrode 55 extending over the entire length in the longitudinal direction is provided on the outer surface of the lower portion of each outer glass plate 51 which is inclined inward.
Are disposed near the gas ejection port 53. Electrode 54
Is connected to a high-frequency power supply, and the electrode 55 is grounded as its counter electrode. The upper end of the electrode 54 protruding from the inner glass plate 50 is covered with an insulator 56, and the outside thereof is covered with a metal cover 5 so as to cover the entire surface treatment apparatus.
7 is attached.

With this configuration, the electrode 5
When a high-frequency voltage is applied between 4 and 55, gas discharge occurs in the above-mentioned empty room near the gas ejection port 53 between them. For this reason, in this embodiment, there is an advantage that the surface treatment with good power efficiency is performed by forming the discharge region 58 near the material to be treated.

FIG. 10 shows still another embodiment of the line type. In this embodiment, as in the case of the outer glass plate 51 in the embodiment of FIG. 9, two vertical outer glass plates 59 face each other, and the lower portions thereof are respectively inclined inward so that the longitudinal direction is between them. A linear gas ejection port 60 is formed to extend to the right side. Each outer glass plate 59 is provided with a pair of thin plate-like high-frequency electrodes 61 along the inner surface of the outer glass plate 59 from the upper end thereof to a position immediately above the lower portion over the entire length in the longitudinal direction. The inner glass plate 62 is formed so as to seal the electrode 61 between the inner glass plate 62 and the outer glass plate 59. As a counter electrode of the electrode 61 connected to the high frequency power supply, a pair of grounded electrodes 63 is attached to the outer surface of the lower portion of the outer glass plate 59 in close proximity to the gas outlet 60. Further, the gas inlet 64 is formed by an opening defined by the upper end of the inner glass plate 62 facing the gas inlet 64. In this embodiment, as in the embodiment of FIG. 9, a gas discharge is generated in the above-mentioned empty space near the gas outlet 60 between each adjacent high-frequency electrode 61 and each ground electrode 63.

FIGS. 11 and 12 show a modification of the discharge generating structure used in the surface treatment apparatus according to the present invention. In FIG. 11, a pair of dielectric plates 64 each having a plurality of corresponding grooves formed on opposing surfaces are joined together,
In addition, a pair of electrodes 65 and 66 are stuck on the opposite side surfaces at positions facing each other. One of the electrodes 65 and 66 is connected to a high-frequency power source and the other is grounded, and a gas is introduced into a gas flow path 67 formed by the groove to generate a discharge. Such a gas flow path can also be formed by perforating one member made of a dielectric.

In FIG. 12, a gas ejection port 68 is formed in an L-shape, and a pair of electrodes 69 and 70 are provided on both sides thereof. The shape of the gas ejection port 68 can be various shapes other than the L-shape in accordance with the shape of the portion for performing the surface treatment of the material to be treated, whereby only a limited portion of the material to be treated is replaced with another portion. Can be processed without any effect.

Next, a method of manufacturing a package type semiconductor device by connecting an electronic component and a lead and sealing it with a resin by using the above-described surface treatment method of the present invention will be described. As shown in FIG. 16, the surface treatment apparatus 1 of FIG.
Immediately below the gas outlet 9 and the metal mesh 10,
An electronic component 79 and a lead 80 are arranged as a material to be processed. The electronic component 79 and the lead 80 are for manufacturing a DIP (Dual Inline Package) type semiconductor device as shown in FIG. 17, and each electrode of the bare chip electronic component 79 adhered on the die pad 81. The pads and the corresponding leads 80 are connected to each other by wires 82 of, for example, gold or aluminum.

When a gas is introduced from the gas supply device and a voltage is applied to the electrode, a discharge occurs in the dielectric tube 2 and a gas flow containing the active species of the gas is ejected from the gas ejection port 9. The electronic components 79 and the leads 80 are exposed through the metal mesh 10 and a desired surface treatment is performed. Next, as shown in FIG. 17, these are sealed with a mold resin 83 to form a package 84. By this surface treatment, the wettability of the surfaces of the electronic component 79 and the leads 80 is greatly improved, so that the contact angle with the mold resin 83 is reduced, and the adhesion between them is improved. If there is a gap at the interface between the mold resin 83 and the electronic component 79 or the lead 80, moisture that has penetrated into the package 84 accumulates in the gap and contaminates the electronic component 79, or expands due to high temperature during reflow and forms a package. There is a possibility that cracks may occur. By improving the adhesiveness of the mold resin according to the present invention, these problems are solved, the reliability is remarkably improved, and the yield is improved.

If the mold resin 83 has good adhesion to the lead 80 but has a problem with the electronic component 79, or if the lead 80 is easily corroded by a gas containing active species, The mask means is disposed between the metal mesh 10 and the electronic component 79 and the lead 80, or the size of the gas outlet 9 is reduced so that only the electronic component 79 is exposed to the gas containing active species. You can do it. Conversely, when the mold resin 83 has good adhesion with the electronic component 79 but has a problem with the lead 80, or when the electronic component 79 is easily affected by electrons or ions due to electric discharge, the same applies. Then, only the leads 80 may be exposed to the gas containing the active species by using a mask means or changing the shape of the gas ejection port 9.

In another embodiment, the electronic component 79 and the lead 8
Before the connection with 0 is performed by wire bonding, surface treatment can be performed using the surface treatment apparatus 1. In this case, the electronic component 79 and the lead 80 bonded to the die pad 81 can be arranged and processed at the same time immediately before wire bonding, or the electronic component 79 and the lead 80 can be separately surface-treated. can do. In these cases, since the surfaces of the electronic component 79 and the lead 80 are each active, the bonding properties of the two are improved, and the adhesion with the resin is also improved when the resin is sealed. Of course, only one of the electronic component 79 and the lead 80 can be surface-treated. Further, according to the present invention, it is possible to selectively process only a necessary portion of the electronic component 79 or the lead 80 with an accuracy of about 2 to 3 mm.

In another embodiment, a TCP type semiconductor device can be manufactured by encapsulating an electronic component connected to the wiring of the tape carrier with a resin instead of the package such as the DIP described above. For example, after wire bonding an electrode of an IC chip to an electrode pad of a tape carrier and before resin molding by transfer molding, or before resin sealing by potting molding after ILB connecting an IC chip to an inner lead of the tape carrier. In addition, a surface treatment with a gas containing the active species described above is performed,
Adhesion with the mold resin can be improved. Further, the method of manufacturing a semiconductor according to the present invention includes the method of manufacturing
Not only TCP and TCP, but also SIP, ZIP, MFP, SOP
The present invention can be similarly applied to various semiconductor devices of a resin-encapsulated package.

Here, experiments were carried out using helium, argon, oxygen, nitrogen, hydrogen, and a mixed gas of these gases. The mold resin 83 and the electronic component 79 or the lead were used for all of these gas types. 80
It was confirmed that the adhesion with the adhesive was improved. In addition, when the power supply was tested at frequencies of 10 KHz, 400 KHz, and 13.56 MHz, it was confirmed that the adhesion between the mold resin 80 and the electronic component 79 or the lead 80 was similarly improved at all these frequencies. The results of these experiments are as shown below.

First, improvement in wettability by the surface treatment of the present invention was confirmed. In this experiment, the surface of the material to be treated was subjected to the surface treatment according to the present invention for 5 seconds, the contact angle was measured using a droplet contact angle meter, the surface was not treated at all, and the material was activated under reduced pressure. Conventional technology using oxygen gas
The contact angle was similarly measured for the sample treated for 5 minutes, and the result was compared with the present invention. As shown in Table 1, although there were some differences depending on the type of gas used, the results showing the remarkable effect of the present invention were obtained. Was done.

[0132]

[Table 1]

Next, an experiment was conducted on the occurrence of cracks in the package due to the adhesion between the mold resin and the electronic component or lead. A set of electronic components and leads both having undergone the surface treatment of the present invention, and a set of electronic components and leads both having undergone the above-described prior art surface treatment, and an electronic component having both no surface treatment and The set of leads was bonded to each other and then resin-sealed. The three packages were dried at 125 ° C. for 10 hours.
After absorbing moisture for 504 hours in an atmosphere of 85% humidity, 25
The reflow treatment was performed at 0 ° C. for 10 seconds, and the rate of occurrence of cracks was confirmed. The results shown in Table 2 were obtained. As a result, according to the present invention, the effect of improving the adhesion was recognized at least to the same degree or more, although the processing time was only 1/180 as compared with the case of the related art.

[0134]

[Table 2]

Further, with respect to device destruction caused by damage to electronic components caused by ions or electrons generated by electric discharge, the defective product generation rate was tested. In the experiment, 10K
Electronic component that has been subjected to the surface treatment of the present invention for 1 hour using a power supply of 13. Hz, an electronic component that has also been subjected to the surface treatment of the present invention for 1 hour using the power supply of 13.56 MHz, and the above-described conventional surface treatment. The defect occurrence rate of each of the electronic components subjected to the above-mentioned test for 1 hour was examined. The results shown in Table 3 below were obtained. According to the experimental results, 13.56M
It can be seen that in the case of the surface treatment of the present invention using a power supply of Hz, the defect occurrence rate is the lowest. From this, it can be said that the frequency on the order of MHz has less damage. However, even if a power source of any frequency is used, the time required for the surface treatment of the present invention is actually about 5 seconds, so that it can be considered that virtually no failure of the electronic component occurs at any frequency. .

[0136]

[Table 3]

From the above experimental results, it can be seen that the best results are obtained when the surface treatment of the present invention is performed in an atmosphere containing oxygen or hydrogen. However, in these cases, of course, if the treatment with oxygen is performed for a long time, the lead metal is oxidized and corroded, and if hydrogen is used for a long time, the lead metal may be hydrogenated and become brittle. In practice, processing conditions must be strictly controlled.

FIG. 18 schematically shows an embodiment of an apparatus capable of performing a surface treatment according to the present invention in ILB (inner lead bonding) for connecting an electronic component to a tape carrier. The ILB device 85 has a well-known configuration including an unwinding reel 87 for feeding out a tape carrier 86, a bonding section 88 for performing bonding, and a winding reel 89 for storing the tape carrier 86 after bonding, and further includes a bonding A surface treatment device 90 for treating the surface of the tape carrier 86 is provided in front of the section 88. The tape carrier 86 is conveyed by a motor 91, guided by a plurality of guide rollers 92, and sent from the unwinding reel 87 to the take-up reel 89 through the surface processing device 90 and the bonding unit 88. The bonding portion 88 has a bonding tool 93 that is driven up and down by a pressure cylinder, as is well known, and the IC chip 95 positioned on the chip stage 94 is provided with an inner tool protruding from the opening of the tape carrier 86. The leads 96 are connected by heating under pressure.

The surface treatment apparatus 90 is, for example, as shown in FIG.
The gas supply device 7 has the same configuration as the surface treatment device of
By applying a high-frequency voltage from the power supply 15 to the gas sent from the furnace, the gas is discharged in the dielectric tube 2 at a pressure near the atmospheric pressure. The gas containing the active species generated by the discharge is ejected from the gas ejection port 9 at the lower end of the dielectric tube 2 toward the tape carrier 86 located immediately below the gas ejection port 9. Exposure to the active species removes organic and inorganic dirt from the surfaces of the inner leads 96 and the tape carrier 86. Thereby, the joining property between the inner lead 96 and the IC chip 95 is greatly improved. In this case, if the bonding surface of the IC chip 95 is similarly subjected to surface treatment using a separate surface treatment device, the bondability between the two is further improved. In addition, the surface treatment simultaneously modifies the surfaces of the inner leads 96 and the tape carrier 86 to improve wettability. Therefore, when these are sealed with a resin in a later step, the adhesion to the mold resin is improved. Thereby, the yield of TCP (Tape Carrier Package) is finally improved.

Further, the surface treatment method of the present invention can be used for dry cleaning in the production of a liquid crystal display. As shown in FIG. 19, the manufacturing process of the liquid crystal display is roughly divided into a pattern substrate manufacturing process, a cell manufacturing process, and a liquid crystal module manufacturing process in order of the process. First, in a pattern substrate manufacturing process, after cleaning a transparent electrode substrate, necessary electrodes and wirings are patterned by using a well-known vacuum deposition method or CVD method to form a pattern substrate. next,
In the cell manufacturing process, an alignment film is formed after the pattern substrate is washed, and after further washing, a liquid crystal cell is formed.
A polarizing plate is attached to the liquid crystal cell having a predetermined size to form a liquid crystal panel. The liquid crystal panel, which has passed the inspection, is finally connected to a driving IC chip and a mounting substrate in a module manufacturing process, and is assembled into a housing to complete a liquid crystal display.

In this embodiment, in the cleaning step during the pattern substrate manufacturing step and the two cleaning steps during the cell manufacturing step, the above-described surface treatment by plasma discharge near the atmospheric pressure is performed on the entire surface of the substrate. . This makes it possible to remove organic and inorganic contaminants from the substrate surface and improve wettability for a subsequent process. According to the present invention, since the substrate can be washed by single-wafer processing, it is not necessary to pay particular attention to the pot life as in the case of batch processing, particularly for wettability. The production can be optimally controlled in consideration of a schedule such as a schedule, a place where each operation is performed, a transportation problem between them, and the like. Further, since the substrate after cleaning can be sent to a post-process in real time, in-line can be easily realized. Further, if necessary, only a part of the substrate can be selectively cleaned.

Further, as a pretreatment before the step of attaching a polarizing plate to the surface of the liquid crystal cell, a surface treatment in the vicinity of the atmospheric pressure according to the present invention is similarly performed. This makes it possible to easily remove organic substances and inorganic substances such as flux, scribe residue and fingerprint stains attached to the liquid crystal cell surface in the previous step at a high speed and at low cost. This eliminates the need for conventional manual cleaning work, which reduces labor and processing time, and does not physically damage the surface of the liquid crystal cell. It is possible to reliably eliminate the possibility that bubbles may remain in the image and display defects such as defective images may occur.

In the final module manufacturing process, a final inspection is performed after assembling the housing, and when a defective semiconductor chip mounted on the liquid crystal panel is found, the defective semiconductor chip is removed and replaced with a non-defective chip. For example, in a liquid crystal panel 96 shown in FIG. 20, a plurality of driving semiconductor chips 98 are directly connected to a glass surface of a liquid crystal cell 97 by a so-called COG (chip on glass) method. According to the present invention, only the found defective semiconductor chip 99 is removed, for example, by heating its joint.

Next, before exchanging and mounting non-defective semiconductor chips, the bonding area 100 is selectively exposed to a gas containing an active species by discharge under the vicinity of atmospheric pressure according to the present invention to perform surface treatment. I do. In this case, between the surface treatment device 101 and the liquid crystal cell 97, as shown in FIG.
It is convenient to use a mask 103 having an opening 102 corresponding to 00 because it can easily prevent other semiconductor chips 98 and their junctions from being affected. Therefore, it is not necessary to remove all the semiconductor chips unlike conventional wet cleaning or various dry cleaning in which local processing is difficult. As a result of an experiment conducted by the inventor of the present invention, a non-defective semiconductor chip in which an adhesive, a brazing material, and the like remaining after removing the defective product 99 from the bonding region 100 are mounted on another portion by performing the surface treatment in this manner. Etc. were removed without any effect. At the same time, bonding area 1
The wettability of No. 00 was improved, and a good semiconductor chip was successfully connected. In addition, in the cleaning of the joint portion, it was difficult to remove the alkaline residue contained in the fingerprint only by the surface treatment. However, by performing a combination of pure water cleaning before or after the surface treatment, the cleaning was completely performed. did it.

Further, in this embodiment, the in-line processing can be performed by using the gun-type surface treatment apparatus 101, and this is integrated with the semiconductor chip bonding apparatus to obtain a bonding apparatus with a washing machine. . In addition, the present invention can be naturally applied to a liquid crystal panel in which a liquid crystal cell and a mounting substrate are connected by a method other than the COG method, and the present invention can be applied to a printed circuit board or the like on which electronic components are mounted in addition to the liquid crystal panel. In a semiconductor device, the present invention can be similarly applied to cleaning of a bonding portion, an adhesive, and the like.

Further, the surface treatment according to the present invention can be used not only for the surface treatment of the bonding surface and the like of the semiconductor device described in relation to the above embodiment, but also for various uses. In particular, since the surface treatment apparatus of the present invention can perform treatment on both upper and lower surfaces regardless of the orientation of the material to be treated, it is possible to clean the interior of an injection molding die and various tanks and devices. Can also be used.

FIG. 22 shows a surface treatment apparatus 104 according to the present invention.
A preferred embodiment is shown in which the mold 106, the CD stamper, and the like of the injection molding machine 105 are cleaned in-process while being attached to the injection molding machine by using. In the surface treatment apparatus 104, a surface treatment unit 107 having the gun-type structure as shown in FIG. 6 is attached to the tip of an arm 109 of a robot 108 that can move freely on site. The arm 109 can be freely moved in a three-dimensional direction. Also, as in the embodiment of FIG. 7, the surface treatment unit 107 can be provided with only a nozzle at the tip of the arm 109 and the discharge unit main body can be built in the robot 108.

In this embodiment, by instructing the robot 108 to perform a predetermined operation in advance, the surface processing unit 107
Can be automatically cleaned without removing the mold 106, the CD stamper and the like from the injection molding machine 105. Moreover, according to the present invention, by forcibly sending the gas containing the active species to the surface of the material to be processed, sufficient treatment can be performed in a short time even when the surface of the mold has a complicated shape or large irregularities, for example. be able to. According to the experiment of the present inventor, the polycarbonate of the CD material attached to the surface of the CD stamper can be easily washed in about 20 minutes,
The processing was performed at about 10 times the speed of the conventional vacuum processing. In addition, an organic material such as an adhesive attached to the surface of the mold could be easily removed, and at the same time, a remarkable effect that the releasability including the CD stamper was greatly improved was obtained.

As described above, the preferred embodiments of the present invention have been described in detail. However, the present invention can be implemented by adding various modifications and changes to the above embodiments within the technical scope thereof. For example, the dielectric tube and its gas outlet can be designed in various shapes other than the cylindrical shape according to the use conditions.

[0150]

Since the present invention is configured as described above, it has the following effects.

According to the surface treatment method of the present invention, the structure of the apparatus can be simplified and the size can be reduced, so that the cost can be greatly reduced and the apparatus can be moved to improve the workability, or the in-line processing can be performed. And on-site processing can be easily achieved. In addition, since the gas containing the active species is irradiated by the discharge under the pressure near the atmospheric pressure, high-speed processing can be performed with less damage to the material to be processed, and it is used regardless of the shape and material of the material to be processed. Depending on the gas, various surface treatments such as improvement in wettability, etching, ashing, and dry cleaning can be effectively performed in a wide range of fields.

According to the surface treatment apparatus of the present invention,
The above-mentioned surface treatment method can be realized, and furthermore, by miniaturization, it is possible to provide a movable device capable of working on site such as a so-called gun type, and furthermore, by adopting a structure in which the electrodes are not exposed to electric discharge. In addition, the durability of the entire apparatus can be improved by reducing the wear of the electrodes, and the damage to the material to be processed can be further reduced.

Further, according to the method of manufacturing a semiconductor device of the present invention, since a reduced-pressure environment is not required, the size of the device can be reduced and the cost can be reduced, and surface treatment can be performed at a high speed by a discharge near the atmospheric pressure. Therefore, the number of electrons and ions is smaller than that of the excited species, the damage to the electronic component or the lead is small, single-wafer processing is possible, and the process of bonding the electronic component and the lead or the process of resin-sealing them Can be easily achieved.

Further, according to the method of manufacturing a semiconductor device of the present invention, in a semiconductor device having a plurality of electronic components mounted thereon,
When removing defective electronic parts and replacing them with good ones, even if there are some defective electronic parts, there is no need to remove all electronic parts as in the past, and processing is quick and easy. Since it can be performed, man-hours and labor can be significantly reduced, and costs can be reduced.

According to the method of manufacturing a liquid crystal module of the present invention, a polarizing plate is attached to a liquid crystal cell, and in the process of assembling the module, the substrate is exposed to an active species of gas by electric discharge, whereby the substrate can be formed at a high speed. Since dry cleaning can be performed, the occurrence of defective attachment of the polarizing plate to the liquid crystal panel is eliminated, improving the yield and simplifying the attachment of the polarizing plate without causing physical damage to the liquid crystal panel. Thus, productivity can be improved.

Further, according to the method of manufacturing a liquid crystal module of the present invention, the liquid crystal cell is exposed to the active species of the gas by electric discharge before the polarizing plate is attached to the liquid crystal cell. Can be washed, so that single-wafer processing can be performed, production control can be performed with a margin without being greatly limited by the pot life after the processing, and in-line with the post-process can be achieved.

[Brief description of the drawings]

FIG. 1A is a longitudinal sectional view showing a first embodiment of a surface treatment apparatus according to the present invention, and FIG. 1B is a sectional view taken along the line BB.

FIG. 2 is a longitudinal sectional view showing a modification of the embodiment shown in FIG.

FIG. 3A is a longitudinal sectional view showing a second embodiment of the surface treatment apparatus, and FIG. 3B is a sectional view taken along line BB.

FIG. 4 is a longitudinal sectional view showing a third embodiment of the surface treatment apparatus.

FIG. 5 is a cross-sectional view of FIGS. 5A to 5C showing different embodiments of the induction discharge type electrode structure.

FIG. 6 is a perspective view showing a so-called gun type surface treatment apparatus according to the present invention.

FIG. 7A is a partial cross-sectional perspective view showing a configuration of a surface treatment apparatus in which a discharge generating unit and a nozzle are separated, and FIG.
B is a diagram showing a modified example of the nozzle portion.

FIG. 8 is a perspective view showing a cross section of a configuration of a line type surface treatment apparatus according to the present invention.

FIG. 9 is a perspective view showing another embodiment of the line type surface treatment apparatus different from FIG.

FIG. 10 is a perspective view showing still another embodiment of the line type surface treatment apparatus different from FIG.

FIG. 11 is a perspective view showing another configuration example of the gas flow path and the electrode.

FIG. 12 is a perspective view showing still another configuration example of the gas flow path and the electrode.

FIG. 13 is a block diagram showing a configuration for causing a reactive gas to contain moisture.

FIG. 14 is a block diagram showing another configuration different from FIG. 13;

FIG. 15 is a block diagram showing still another configuration different from FIG.

FIG. 16 is an enlarged view showing a state in which the surface of the bonded electronic component and the lead are subjected to surface treatment using the surface treatment apparatus of FIG. 1 before resin sealing.

FIG. 17 is a cross-sectional view showing an electronic component and a lead sealed with resin.

FIG. 18 is a configuration diagram schematically showing an apparatus for inner bonding an electronic component to a tape carrier using the surface treatment apparatus according to the present invention.

FIG. 19 is a flowchart showing a step of manufacturing a liquid crystal display.

FIG. 20 is a plan view for explaining how to remove a defective electronic component from the liquid crystal cell.

FIG. 21 is a cross-sectional view showing a liquid crystal cell that is partially cleaned using a mask.

FIG. 22 is a configuration diagram schematically showing an injection molding machine and a surface treatment apparatus used integrally therewith.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Surface treatment apparatus 2 Dielectric tube 3a, 3b High frequency electrode 4 Insulator 5 Metal case 6 Gas inlet 7 Gas supply device 8 Flexible tube 9 Gas ejection port 10 Metal mesh 11 Workpiece 13 Coaxial cable 1 14 Impedance matching circuit 14 REFERENCE SIGNS LIST 15 high-frequency power supply 16 screw 17 discharge region 18 gas conduit 19 metal cover 20 surface treatment device 21 glass tube 22 inner glass tube 23 outer glass tube 24 annular cavity 25 high-frequency electrode 26 ground electrode 27 discharge region 28 discharge tube 29 gas inlet 30 Coil electrode 31 Gas ejection port 32 Discharge area 33 Processing device 34 Nozzle 35 Discharge generating portion 36 Tip opening 37 Discharge generating portion 38 Nozzle portion 39 Flexible tube 40 Surface treatment device 41 Main body 42 Nozzle portion 43 Surface treatment device 44 Dielectric plate 45 Gas Inlet 46 Gas outlet 47 High-frequency electrode plate 48 Insulator 49 Metal cover 50 Inner glass plate 51 Outer glass plate 52 Gas inlet 53 Gas outlet 54 High-frequency electrode 55 Electrode 56 Insulator 57 Metal cover 58 Discharge area 59 Outer glass plate Reference Signs List 60 gas outlet 61 electrode 62 inner glass plate 63 ground electrode 64 dielectric plate 65, 66 electrode 67 gas flow path 68 gas outlet 69, 70 electrode 71 surface treatment device 72 pipe 73 valve 74 tank 75 pure water 76 heater 77 fog Generator 78 pipe 79 electronic component 80 lead 81 die pad 82 wire 83 mold resin 84 package 85 ILB device 86 tape carrier 87 unwinding reel 88 bonding section 89 winding reel 90 surface treatment device 91 motor 92 guide roller 93 bonde Injecting tool 94 Chip stage 95 IC chip 96 Inner lead 97 Liquid crystal cell 98 Driving semiconductor chip 99 Defective semiconductor chip 99 100 Joining area 101 Surface treatment device 102 Opening 103 Mask 104 Surface treatment device 105 Injection molding machine 106 Mold 107 Surface treatment unit 108 Robot 109 Arm

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yasuhiko Asano 3-3-5 Yamato, Suwa City, Nagano Prefecture Inside Seiko Epson Corporation (72) Inventor Osamu Kurashina 3-3-5 Yamato Suwa City, Nagano Prefecture Seiko Epson Co., Ltd. (72) Inventor Yama ▲ Saki ▼ Yasuo 3-35-5 Yamato, Suwa-shi, Nagano Seiko Epson Corporation (72) Inventor Tokukata Hatama 3-5-2, Yamato, Suwa-shi, Nagano Seiko-Epson Inside (72) Inventor Inoue Kurashima 3-3-5 Yamato, Suwa City, Nagano Prefecture Inside Seiko Epson Corporation (72) Inventor Makoto Anan 3-3-5, Yamato Suwa City, Nagano Prefecture Inside Seiko Epson Corporation

Claims (51)

[Claims] A predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas at or near atmospheric pressure in the gas flow path. And a step of exposing the material to be treated to active species of the gas generated by the discharge to treat the surface thereof. 2. The surface treatment method according to claim 1, wherein the gas discharge is generated by applying a high-frequency voltage to an electrode provided outside a gas flow path made of the dielectric material. 3. The surface treatment method according to claim 1, wherein the gas discharge is generated by a non-polar discharge by a microwave. 4. The method according to claim 1, wherein the surface of the material to be treated is exposed to a gas flow containing the active species without being directly exposed to the gas discharge. Item 4. The surface treatment method according to any one of Items 3. 5. The surface treatment method according to claim 4, wherein the material to be treated is arranged near an outlet of the gas flow path. 6. The method according to claim 6, further comprising: transferring an active species of the gas generated by the discharge to a vicinity of a material to be processed, which is separated from the gas flow path, and exposing the material to the active species of the gas. The surface treatment method according to any one of claims 1 to 5, wherein: 7. The surface treatment method according to claim 4, wherein the gas flow is applied to a surface of the material to be treated through a pipe connected to an outlet of the gas flow path. 8. The surface treatment method according to claim 4, wherein the gas flow is applied to the surface of the workpiece through a metal mesh. 9. The surface treatment method according to claim 8, wherein the gas discharge is generated between the metal mesh and a ground electrode using the metal mesh as a ground electrode. 10. The surface treatment method according to claim 1, wherein the surface of the material to be treated is selectively exposed to an active species of the gas. 11. The surface treatment method according to claim 1, wherein the predetermined gas contains a rare gas at least at the start of the gas discharge. 12. The method according to claim 1, wherein the predetermined gas is one of helium, nitrogen and compressed air.
The surface treatment method according to claim 11. 13. The surface treatment method according to claim 1, wherein the predetermined gas contains helium or nitrogen and oxygen. 14. The surface treatment method according to claim 1, wherein the predetermined gas includes helium or compressed air, and a fluorine compound. 15. The method according to claim 1, wherein the predetermined gas is composed of 100% of a rare gas, and the gas discharge activates a reactive gas present in the vicinity of the material to be processed, and exposes a surface of the material to be processed to the active species. Claims 1 to 1 characterized by the following:
0. The surface treatment method according to any one of 0. 16. The surface treatment method according to claim 15, wherein the reaction gas is contained in an atmosphere near the material to be treated. 17. The surface treatment method according to claim 15, wherein the reaction gas is introduced near the material to be treated. 18. The material to be processed is exposed to a gas containing the active species in the presence of water.
The surface treatment method according to claim 17. 19. The surface treatment method according to claim 18, wherein the material to be treated is exposed to the gas in water. 20. The surface treatment method according to claim 1, wherein the material to be treated is cooled or heated. 21. The electrode for applying a high-frequency voltage and / or
21. The surface treatment method according to claim 1, wherein a portion of the gas passage exposed to the discharge is cooled. 22. The method according to claim 1, wherein the surface of the workpiece is treated while moving the workpiece.
The surface treatment method according to any one of the first to third aspects. 23. A gas flow path formed of a dielectric material,
Means for introducing a gas into the gas flow path, means for generating a gas discharge in the gas at atmospheric pressure or a pressure near the same in the gas flow path, and an active species generated by the discharge. Means for exposing the material to be processed to a gas containing the same. 24. The surface treatment apparatus according to claim 23, wherein said gas discharge generating means comprises an electrode provided outside said gas flow path, and means for applying a high frequency voltage to said electrode. 25. The apparatus according to claim 2, wherein the electrode is provided relatively outside the gas flow path.
5. The surface treatment apparatus according to 4. 26. The gas discharge generating means generates a non-polar discharge by microwaves.
3. The surface treatment apparatus according to 3. 27. The surface treatment apparatus according to claim 24, wherein said gas discharge generating means has a grounded counter electrode, and performs gas discharge between said electrode and said electrode. 28. The apparatus according to claim 23, wherein the means for exposing the material to be processed to the gas containing the active species comprises an outlet of the gas flow path for ejecting a gas flow of the gas. 28. The surface treatment apparatus according to any one of 27. 29. The apparatus according to claim 28, wherein the means for exposing the material to be processed to the gas containing the active species has a conduit for guiding the gas flow from the outlet to the vicinity of the material to be processed. The surface treatment apparatus as described in the above. 30. The means for exposing the material to be treated to the gas containing the active species, further comprising a metal mesh disposed between the outlet and the material to be treated. 30. The surface treatment device according to claim 29. 31. The metal mesh is grounded,
The surface treatment apparatus according to claim 30, wherein gas discharge is generated between the electrode and the metal mesh. 32. The surface treatment according to claim 23, further comprising a mask means for selectively exposing the surface of the material to be treated to a gas containing the active species. apparatus. 33. The apparatus further comprises means for introducing a reaction gas into the vicinity of the material to be processed, wherein the gas introduced into the gas flow path by the gas introduction means comprises 100% of a rare gas, 4. The method according to claim 1, wherein the reaction gas is activated by gas discharge of the gas.
3. The surface treatment apparatus according to any one of 2. 34. The apparatus according to claim 2, further comprising means for causing the gas containing the active species to contain moisture.
The surface treatment apparatus according to any one of claims 3 to 33. 35. The surface treatment apparatus according to claim 23, further comprising a unit configured to supply moisture to a surface of the workpiece to be exposed to the gas containing the active species. 36. The surface treatment apparatus according to claim 23, further comprising a unit for supplying moisture to the gas introduced into the gas flow path. 37. The surface treatment apparatus according to claim 23, wherein the material to be treated is disposed in water, and is exposed to a gas containing the active species in water. 38. The apparatus according to claim 23, further comprising means for cooling or heating the material to be processed.
The surface treatment apparatus according to any one of the above. 39. The electrode for applying a high-frequency voltage and / or
38. The surface treatment apparatus according to claim 24, further comprising a unit configured to cool a portion of the gas flow path exposed to the discharge. 40. The surface treatment apparatus according to claim 23, wherein the means for exposing the gas containing the active species and the material to be treated are relatively movable. 41. When the frequency of the voltage applied to the electrode is 13.56 MHz or less, the electrode is connected via a coaxial cable to an impedance etching circuit connected to a power supply for the high frequency voltage. Claims 24, 25, 27 to 39
The surface treatment apparatus according to any one of the above. 42. A method of manufacturing a package-type semiconductor device by joining an electronic component and a lead and enclosing the lead with a resin, wherein a dielectric material is formed before the joined electronic component and the lead are sealed with a resin. A predetermined gas is introduced into a gas flow path formed of a material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure close thereto in the gas flow path, and is generated by the discharge. A method of manufacturing a semiconductor device, comprising performing a surface treatment step of exposing at least one of the joined electronic component and lead to the active species of the gas. 43. The method according to claim 42, wherein the lead is an inner lead of a tape carrier, and the surface treatment step is performed after connecting the electronic component and the inner lead and before resin sealing. Of manufacturing a semiconductor device. 44. A method for manufacturing a package-type semiconductor device in which an electronic component and a lead are joined and sealed with a resin, wherein the electronic component and the lead are formed of a dielectric material before the electronic component and the lead are joined. A predetermined gas is introduced into the gas flow path, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure near the atmospheric pressure in the gas flow path, and the activity of the gas generated by the discharge is increased. A method of manufacturing a semiconductor device, comprising: performing a surface treatment step of exposing at least one of the electronic component and the lead to be bonded to a seed. 45. The semiconductor device according to claim 44, wherein the lead is an inner lead of a tape carrier, and the surface treatment step is performed before connecting the electronic component to the inner lead. Method. 46. An apparatus for manufacturing a package-type semiconductor device by encapsulating a joined electronic component and a lead with a resin, comprising: a surface treatment for surface-treating the joined electronic component and the lead. And a resin sealing portion for enclosing the electronic component and the lead surface-treated by the surface treatment portion with a resin, wherein the surface treatment portion is a gas flow path formed of a dielectric material, Means for introducing a gas into the gas flow path, means for generating a gas discharge in the gas at atmospheric pressure or a pressure near the same in the gas flow path, and an active species generated by the discharge. Means for exposing at least one of the joined electronic component and the lead to a gas containing the semiconductor device. 47. An apparatus for manufacturing a semiconductor device by bonding an electronic component and a lead, comprising: a surface treatment section for performing a surface treatment on at least one of the electronic component and the lead before the bonding; A bonding section for bonding the electronic component and the lead, wherein the surface treatment section has a gas flow path formed of a dielectric material, and means for introducing a gas into the gas flow path. Means for generating a gas discharge in the gas at or near atmospheric pressure in the gas flow path, and exposing at least one of the electronic component or the lead to a gas containing active species generated by the discharge. Means for manufacturing a semiconductor device. 48. The method according to claim 48, wherein the lead is an inner lead of a tape carrier, and the surface treatment section performs a surface treatment on an inner lead of the tape carrier fed from a reel before the bonding section. 48. The semiconductor device manufacturing apparatus according to claim 47, wherein: 49. A method for manufacturing a liquid crystal display by attaching a polarizing plate to a liquid crystal cell, connecting a driving circuit and a power supply circuit to assemble a module, and manufacturing the liquid crystal display. A predetermined gas is introduced into the gas flow path, a gas discharge is generated in the predetermined gas at or near atmospheric pressure in the gas flow path, and active species of the gas generated by the discharge are generated. Further comprising a surface treatment step of exposing the substrate. 50. A method of manufacturing a liquid crystal display by attaching a polarizing plate to a liquid crystal cell, and connecting a driving circuit and a power supply circuit to assemble a module, wherein the polarizing plate is attached to the liquid crystal cell. Before bonding, a predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure near the gas flow in the gas flow path. And performing a surface treatment step of exposing the liquid crystal cell to active species of the gas generated by the discharge. 51. A method for manufacturing a semiconductor device comprising the steps of: mounting a plurality of electronic components, removing a defective electronic component, replacing the defective electronic component with a non-defective electronic component, and re-mounting the defective electronic component. After removing the electronic components and before connecting the non-defective electronic components, a predetermined gas is introduced into a gas flow path formed of a dielectric material, and the gas flow path is subjected to atmospheric pressure or a pressure near the atmospheric pressure. A gas discharge is generated in the predetermined gas at the active species of the gas generated by the discharge,
A method of manufacturing a semiconductor device, comprising performing a surface treatment step of exposing at least one of the non-defective electronic component and a connection portion of the semiconductor device.