JP4914275B2

JP4914275B2 - Plasma processing equipment

Info

Publication number: JP4914275B2
Application number: JP2007097759A
Authority: JP
Inventors: 俊介功刀; 勇一中森; 裕人竹内
Original assignee: Sekisui Chemical Co Ltd
Current assignee: Sekisui Chemical Co Ltd
Priority date: 2007-04-03
Filing date: 2007-04-03
Publication date: 2012-04-11
Anticipated expiration: 2027-04-03
Also published as: JP2008257958A

Description

この発明は、処理ガスを放電空間でプラズマ化して被処理物に接触させ、プラズマ表面処理を行なう装置に関し、特に、被処理物が放電空間の外部に配置され、これに向けて処理ガスを放電空間から噴出す所謂リモート式のプラズマ処理装置に関する。 The present invention relates to an apparatus for performing plasma surface treatment by converting a processing gas into plasma in a discharge space and bringing it into contact with an object to be processed, and in particular, the object to be processed is disposed outside the discharge space, and the processing gas is discharged toward this. The present invention relates to a so-called remote type plasma processing apparatus ejected from a space.

特許文献１に記載の大気圧プラズマ処理装置には、一対の誘電体からなる板が設けられている。これら誘電体板が互いに接合されている。各誘電体板の接合面に凸条と凹条が交互に形成されている。一対の誘電体板の凸条どうしが当接されるとともに凹条どうしが合わさり、直線状の処理ガス通路が形成されている。各誘電体板の接合面とは反対側の面には、電極が貼り付けられている。これら電極間に電界を印加する。これにより、２つの凹条を合わせた直線状の処理ガス通路の内部がそれぞれ大気圧の放電空間となり、処理ガスがプラズマ化される。
特開平７−２４５１９２号公報（段落０１４０、図１１） The atmospheric pressure plasma processing apparatus described in Patent Document 1 is provided with a pair of dielectric plates. These dielectric plates are joined together. Convex ridges and concave ridges are alternately formed on the joint surface of each dielectric plate. The convex stripes of the pair of dielectric plates are brought into contact with each other and the concave stripes are joined together to form a straight processing gas passage. An electrode is affixed to the surface opposite to the bonding surface of each dielectric plate. An electric field is applied between these electrodes. As a result, the inside of the straight processing gas passage combining the two ridges becomes a discharge space of atmospheric pressure, and the processing gas is turned into plasma.
JP-A-7-245192 (paragraph 0140, FIG. 11)

上掲特許文献の装置では、凸条によって放電空間の厚さを一定に維持できる。その一方、放電空間が、各凹条の内部の狭隘な線状空間に限定される。そのため、放電しにくく、放電開始電圧を高く設定する必要がある。また、電極間の電界中に凹条及び凸条が配置されることになり、これら凹条や凸条の角部からパーティクルが生じやすい。さらには、凹条ごとの処理ガスの導入量が不均一であると、その導入量がそのまま噴出量となるので、処理の均一性を保てない。したがって、処理ガスを複数の凹条に正確に均等分配する必要がある。 In the device of the above-mentioned patent document, the thickness of the discharge space can be kept constant by the ridges. On the other hand, the discharge space is limited to a narrow linear space inside each recess. Therefore, it is difficult to discharge, and it is necessary to set a high discharge start voltage. In addition, the ridges and ridges are arranged in the electric field between the electrodes, and particles are likely to be generated from the corners of these ridges and ridges. Furthermore, if the amount of treatment gas introduced for each groove is non-uniform, the amount of introduction is the same as the amount of ejection, so that processing uniformity cannot be maintained. Therefore, it is necessary to distribute the processing gas accurately and evenly to the plurality of grooves.

上記課題を解決するために、本発明は、処理ガスを放電空間でプラズマ化して一方向に噴出し、前記放電空間より前記噴出方向の下流側の被処理物配置部に配置された被処理物に接触させ、プラズマ表面処理を行なう装置において、
（ａ）前記噴出方向と交差する第１方向に互いに対向された第１、第２の電極と、
（ｂ）前記第１電極の前記第２電極を向く第１主面を覆う第１主面覆部と、前記第１電極より前記噴出方向の下流側において前記第１主面覆部に連なる第１下流側部と、を有する固体誘電体からなる第１誘電部材と、
（ｃ）前記第２電極の前記第１電極を向く第２主面を覆う第２主面覆部と、前記第２電極より前記噴出方向の下流側において前記第２主面覆部に連なる第２下流側部と、を有する固体誘電体からなる第２誘電部材と、
を備え、前記第１主面覆部と第２主面覆部が、前記第１方向に対向されて互いの間に前記放電空間となるべき中間隙間を形成する平坦面をそれぞれ有し、
前記第１下流側部と前記第２下流側部とが、前記第１方向に対向されるとともに、少なくとも一方の下流側部の対向面には、該一方の下流側部と一体をなすとともに他方の下流側部に当接された下流凸部と、下流凹部とが、前記噴出方向及び前記第１方向と交差する第２方向に交互に形成され、
前記第２方向に並んだ下流凹部の内部どうしが前記中間隙間を介して互いに連なり、
各下流凹部の内部が、前記中間隙間からの処理ガスを前記被処理物配置部へ噴出する噴出路となっていることを特徴とする。
この特徴構成によれば、第１、第２主面覆部の平坦面どうしからなる中間隙間を放電空間とすることにより放電開始のための電圧を低く抑えることができ、かつ放電空間内でのパーティクルの発生を防止することができる。また、処理ガスを１つの中間隙間で一様にプラズマ化したうえで各噴出路に分配して噴き出すので、処理ムラを抑えることができる。さらに、上記凸部によって放電空間の厚さを維持することができる。別途の放電空間厚さ維持構造が不要であり、軽量化及び部品点数の削減を図ることができる。 In order to solve the above-described problems, the present invention provides a processing object that is converted into a plasma in a discharge space and ejected in one direction, and is disposed in a processing object disposition portion downstream of the discharge space in the ejection direction. In an apparatus for performing plasma surface treatment in contact with
(A) first and second electrodes opposed to each other in a first direction intersecting the ejection direction;
(B) a first main surface covering portion that covers the first main surface of the first electrode facing the second electrode, and a first main surface covering portion that is downstream of the first electrode in the ejection direction and continuous with the first main surface covering portion. A first dielectric member made of a solid dielectric having one downstream side part;
(C) a second main surface covering portion that covers the second main surface of the second electrode facing the first electrode, and a second main surface covering portion that is downstream of the second electrode in the ejection direction from the second electrode. A second dielectric member made of a solid dielectric having two downstream sides;
The first main surface covering portion and the second main surface covering portion have flat surfaces that face each other in the first direction and form an intermediate gap to be the discharge space between each other,
The first downstream side portion and the second downstream side portion are opposed to each other in the first direction, and at least one of the downstream side portions is integrally formed with the one downstream side portion and the other. Downstream protrusions that are in contact with the downstream side portion and downstream recesses are alternately formed in the second direction intersecting the ejection direction and the first direction,
And if the inside of the downstream recess arranged in the second direction becomes communicated with each other via the intermediate gap,
The inside of each downstream concave portion is a jet passage for jetting the processing gas from the intermediate gap to the workpiece placement portion.
According to this characteristic configuration, the voltage for starting discharge can be kept low by setting the intermediate gap formed by the flat surfaces of the first and second main surface covering portions as the discharge space, and in the discharge space. Generation of particles can be prevented. Further, since the processing gas is uniformly converted into plasma at one intermediate gap and then distributed to each ejection path and ejected, processing irregularities can be suppressed. Furthermore, the thickness of the discharge space can be maintained by the convex portion. A separate discharge space thickness maintaining structure is unnecessary, and the weight can be reduced and the number of parts can be reduced.

前記下流凸部及び下流凹部が、前記噴出方向に沿って延びる条状になっていることが好ましい。
これによって、放電空間の厚さを確実に保持できる。また、処理ガスを噴出方向に案内して勢い良く噴出すことができる。 It is preferable that the downstream convex portion and the downstream concave portion have a strip shape extending along the ejection direction.
As a result, the thickness of the discharge space can be reliably maintained. Further, the processing gas can be ejected vigorously while being guided in the ejection direction.

前記第１電極又は第２電極の前記下流側の端部が、前記下流凸部及び下流凹部より前記噴出方向の上流側に離れて位置されていることが好ましい。これによって、放電空間内でパーティクルが発生するのを一層確実に防止することができる。 It is preferable that the downstream end portion of the first electrode or the second electrode is located farther upstream in the ejection direction than the downstream convex portion and the downstream concave portion. As a result, the generation of particles in the discharge space can be more reliably prevented.

前記下流凸部と下流凹部が、前記第１下流側部にのみ形成され、
前記第２下流側部の第１下流側部との対向面が、平坦になっていることが好ましい。
これによって、第１、第２下流側部双方の下流凸部どうしの位置合わせが不要になり、組み立て作業の簡易化を図ることができる。たとえ第１、第２誘電部材どうしが多少位置ずれしていてもパーティクルの発生を確実に回避できる。 The downstream convex portion and the downstream concave portion are formed only on the first downstream side portion,
It is preferable that a surface of the second downstream side portion facing the first downstream side portion is flat.
As a result, it is not necessary to align the downstream convex portions of both the first and second downstream side portions, and the assembling work can be simplified. Even if the first and second dielectric members are slightly misaligned, the generation of particles can be reliably avoided.

前記第１誘電部材が、前記第１電極より前記噴出方向の上流側において前記第１主面覆部に連なる第１上流側部を更に有しているのが好ましい。前記第２誘電部材が、前記第２電極より前記噴出方向の上流側において前記第２主面覆部に連なる第２上流側部を更に有しているのが好ましい。
前記第１上流側部と前記第２上流側部とが、前記第１方向に対向されるとともに、少なくとも一方の上流側部の対向面には、該一方の上流側部と一体をなすとともに他方の上流側部に当接された上流凸部と、上流凹部とが、前記第２方向に交互に形成され、前記第２方向に並んだ上流凹部の内部どうしが前記中間隙間を介して互いに連なり、各上流凹部の内部が、処理ガスを前記中間隙間へ導く導入路となっていることが好ましい。
これによって、放電開始電圧を低く抑えるとともにパーティクルの発生を防止しつつ、放電空間の厚さを一層確実に保持できる。各導入路に導入された処理ガスは中間隙間にて合流される。したがって、導入路ごとの処理ガス導入量を正確に均等分配しなくても済み、処理ガスの分配構造を簡単化することができる。 It is preferable that the first dielectric member further includes a first upstream side portion connected to the first main surface covering portion on the upstream side in the ejection direction from the first electrode. It is preferable that the second dielectric member further includes a second upstream side portion connected to the second main surface covering portion on the upstream side in the ejection direction from the second electrode.
The first upstream side portion and the second upstream side portion are opposed to each other in the first direction, and the opposite surface of at least one upstream side portion is integrated with the one upstream side portion and the other. The upstream convex portion and the upstream concave portion that are in contact with the upstream side portion of the first and second recesses are alternately formed in the second direction, and the interiors of the upstream concave portions arranged in the second direction are connected to each other via the intermediate gap. Thus , the inside of each upstream recess is preferably an introduction path for guiding the processing gas to the intermediate gap.
As a result, the thickness of the discharge space can be more reliably maintained while suppressing the discharge start voltage and preventing the generation of particles. The processing gas introduced into each introduction path is merged at the intermediate gap. Therefore, it is not necessary to distribute the processing gas introduction amount for each introduction path accurately and uniformly, and the processing gas distribution structure can be simplified.

前記上流凸部及び上流凹部が、前記噴出方向に沿って延びる条状をなしていることが好ましい。これによって、放電空間の厚さをより一層確実に保持できる。また、処理ガスを噴出方向に沿って中間隙間内へ案内することができる。 It is preferable that the upstream convex portion and the upstream concave portion have a strip shape extending along the ejection direction. As a result, the thickness of the discharge space can be more reliably maintained. Further, the processing gas can be guided into the intermediate gap along the ejection direction.

前記第１電極又は第２電極の前記上流側の端部が、前記上流凸部及び上流凹部より前記下流側に離れて位置されていることが好ましい。
これによって、放電空間内でパーティクルが発生するのを一層確実に防止することができる。また、第１電極又は第２電極の前記噴出方向に沿う寸法を小さくすることにより、単位放電面積あたりの電流密度を高め、高濃度のプラズマを得ることができ、処理能力を高めることができる。 It is preferable that the upstream end portion of the first electrode or the second electrode is located farther downstream than the upstream convex portion and the upstream concave portion.
As a result, the generation of particles in the discharge space can be more reliably prevented. Further, by reducing the dimension of the first electrode or the second electrode along the ejection direction, the current density per unit discharge area can be increased, high-density plasma can be obtained, and the processing capability can be increased.

前記上流凸部と上流凹部が、前記第１下流側部にのみ形成され、
前記第２上流側部の第１上流側部との対向面が、平坦になっていることが好ましい。
これによって、第１、第２上流側部双方の上流凸部どうしの位置合わせが不要になり、組み立て作業の簡易化を図ることができる。たとえ第１、第２誘電部材どうしが多少位置ずれしていてもパーティクルの発生を確実に回避できる。 The upstream convex portion and the upstream concave portion are formed only on the first downstream side portion,
It is preferable that a surface of the second upstream side portion facing the first upstream side portion is flat.
As a result, it is not necessary to align the upstream convex portions of both the first and second upstream side portions, and the assembly work can be simplified. Even if the first and second dielectric members are slightly misaligned, the generation of particles can be reliably avoided.

本発明は、ほぼ大気圧近傍下（常圧下）でのプラズマ処理に好適である。ここで、ほぼ大気圧近傍下（ほぼ常圧）とは、１．０１３×１０⁴〜５０．６６３×１０⁴Ｐａの範囲を言い、圧力調整の容易化や装置構成の簡易化を考慮すると、１．３３３×１０⁴〜１０．６６４×１０⁴Ｐａが好ましく、９．３３１×１０⁴〜１０．３９７×１０⁴Ｐａがより好ましい。 The present invention is suitable for plasma processing under nearly atmospheric pressure (normal pressure). Here, substantially under atmospheric pressure (substantially normal pressure) refers to a range of 1.013 × 10 ^{4 to} 50.663 × 10 ⁴ Pa, and considering the ease of pressure adjustment and the simplification of the device configuration, 1.333 × 10 ^{4 to} 10.664 × 10 ⁴ Pa are preferable, and 9.331 × 10 ^{4 to} 10.9797 × 10 ⁴ Pa are more preferable.

本発明によれば、放電空間の厚さを維持しつつ、放電開始のための電圧を低く設定でき、さらには放電空間内でのパーティクルの発生を抑えることができ、処理品質を高めることができる。 According to the present invention, the voltage for starting discharge can be set low while maintaining the thickness of the discharge space, and the generation of particles in the discharge space can be suppressed, and the processing quality can be improved. .

以下、本発明の実施形態を図面にしたがって説明する。
図１は、本発明の第１実施形態を示したものである。大気圧プラズマ処理装置１は、処理ヘッド１０と、被処理物配置部２とを備えている。被処理物配置部２は、ステージやコンベアで構成されており、その上に被処理物Ｗが配置されるようになっている。被処理物Ｗは、例えばガラス基板や半導体基板である。
被処理物配置部２は、被処理物Ｗを左右方向にスキャンできるようになっている。被処理物Ｗが位置固定され、処理ヘッド１０が左右方向にスキャンされるようになっていてもよい。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a first embodiment of the present invention. The atmospheric pressure plasma processing apparatus 1 includes a processing head 10 and an object placement unit 2. The workpiece placement unit 2 is composed of a stage and a conveyor, and the workpiece W is placed thereon. The workpiece W is, for example, a glass substrate or a semiconductor substrate.
The workpiece placement unit 2 can scan the workpiece W in the left-right direction. The workpiece W may be fixed in position, and the processing head 10 may be scanned in the left-right direction.

処理ヘッド１０は、図示しない架台に支持され、被処理物配置部２の上方に離れて位置され、処理ガスをプラズマ化（分解、励起、活性化、ラジカル化、イオン化を含む）して被処理物配置部２ひいては被処理物Ｗへ向けて下方に噴き出すようになっている。処理ヘッド１０は、仮想線で示すヘッド本体１１と、このヘッド本体１１の内部に設けられた一対をなす第１、第２電極２１，２２と、一対をなす第１、第２誘電部材３１，３２とを備え、図１の紙面と直交する前後方向に延びている。 The processing head 10 is supported by a gantry (not shown) and is located above the processing object placement unit 2, and the processing gas is converted into plasma (including decomposition, excitation, activation, radicalization, and ionization) to be processed. The object arrangement part 2 and, in turn, are ejected downward toward the workpiece W. The processing head 10 includes a head main body 11 indicated by an imaginary line, a pair of first and second electrodes 21 and 22 provided inside the head main body 11, and a pair of first and second dielectric members 31, 32, and extends in the front-rear direction orthogonal to the paper surface of FIG.

図１及び図２（ｂ）に示すように、電極２１，２２は、左右（第１方向）に対向するように配置され、平行平板電極を構成している。各電極２１，２２は、四角形の断面を有し、互いの対向方向と直交する方向（図２において上下）に延びている。第１、第２電極２１，２２のうち例えば第１電極２１は、電源３に接続され、ホット電極となっている。第２電極２２は、電気的に接地され、アース電極となっている。電源３から電極２１への電圧供給により、電極２１，２２間に電界が印加され、大気圧グロー放電が生成されるようになっている。ここで、大気圧グロー放電は、アークやストリーマーが観測されない、見た目均一の放電である。
第２電極２２が電源３に接続されてホット電極になり、第１電極２１が電気的に接地されてアース電極になっていてもよい。 As shown in FIGS. 1 and 2 (b), the electrodes 21 and 22 are arranged so as to oppose left and right (first direction), and constitute parallel plate electrodes. Each of the electrodes 21 and 22 has a rectangular cross section and extends in a direction (up and down in FIG. 2) perpendicular to the opposing direction. For example, the first electrode 21 of the first and second electrodes 21 and 22 is connected to the power source 3 and serves as a hot electrode. The second electrode 22 is electrically grounded and serves as an earth electrode. By supplying a voltage from the power source 3 to the electrode 21, an electric field is applied between the electrodes 21 and 22, and an atmospheric pressure glow discharge is generated. Here, the atmospheric pressure glow discharge is a discharge that is uniform in appearance, in which no arc or streamer is observed.
The second electrode 22 may be connected to the power source 3 to be a hot electrode, and the first electrode 21 may be electrically grounded to be a ground electrode.

誘電部材３１，３２は、それぞれアルミナなどの固体誘電体のセラミックで構成され、大略「コ」字状の断面を有し、電極２１，２２と同方向に延びている。第１誘電部材３１は、第１電極２１の収容ケースとなり、第２誘電部材３２は、第２電極２２の収容ケースとなっている。これら誘電部材３１，３２が互いに向き合い、当接されている。 The dielectric members 31 and 32 are each made of a solid dielectric ceramic such as alumina, have a substantially “U” -shaped cross section, and extend in the same direction as the electrodes 21 and 22. The first dielectric member 31 is a housing case for the first electrode 21, and the second dielectric member 32 is a housing case for the second electrode 22. These dielectric members 31 and 32 face each other and are in contact with each other.

誘電部材３１，３２の構造を更に詳述する。
図１及び図２（ａ）〜（ｃ）に示すように、第１誘電部材３１は、長手方向を前後（第１方向と直交する第２方向）に向け、幅方向を上下（噴出方向に沿う第３方向）に向けた薄板状の第１主面覆部３１０と、この主面覆部３１０の上側（噴出方向の上流側）に設けられた第１上流側部３１１と、主面覆部３１０の下側（噴出方向の下流側）に設けられた第１下流側部３１２とを一体に有している。第１誘電部材３１の各部３１０，３１１，３１２が、互いに別体になっており、接着剤で接合されるようになっていてもよい。 The structure of the dielectric members 31 and 32 will be further described in detail.
As shown in FIG. 1 and FIGS. 2A to 2C, the first dielectric member 31 has a longitudinal direction in the front-rear direction (second direction orthogonal to the first direction) and a width direction in the vertical direction (in the ejection direction). A first main surface covering portion 310 in the form of a thin plate facing the third direction), a first upstream portion 311 provided on the upper side (upstream side in the ejection direction) of the main surface covering portion 310, and the main surface covering. It integrally has a first downstream side portion 312 provided on the lower side of the portion 310 (downstream side in the ejection direction). The portions 310, 311 and 312 of the first dielectric member 31 may be separated from each other and bonded with an adhesive.

上流側部３１１は、主面覆部３１０の上端部に沿って前後に延びるとともに左側へ突出する厚板状をなしている。下流側部３１２は、主面覆部３１０の下端部に沿って上流側部３１１と平行に延びるとともに左側へ突出する厚板状をなしている。主面覆部３１０と上下の側部３１１，３１２とにより第１収容凹部３１３が形成されている。 The upstream side portion 311 has a thick plate shape that extends back and forth along the upper end portion of the main surface covering portion 310 and protrudes to the left side. The downstream side portion 312 has a thick plate shape that extends in parallel with the upstream side portion 311 along the lower end portion of the main surface covering portion 310 and protrudes to the left side. A first receiving recess 313 is formed by the main surface covering portion 310 and the upper and lower side portions 311 and 312.

同様に、第２誘電部材３２は、長手方向を前後に向け、幅方向を上下に向けた薄板状の第２主面覆部３２０と、この主面覆部３２０の上側に設けられた第２上流側部３２１と、主面覆部３２０の下側に設けられた第２下流側部３２２とを一体に有している。第２誘電部材３２の各部３２０，３２１，３２１が、互いに別体になっており、接着剤で接合されるようになっていてもよい。
上流側部３２１は、主面覆部３２０の上端部に沿って前後に延びるとともに右側へ突出する厚板状をなしている。下流側部３２２は、主面覆部３２０の下端部に沿って第２上流側部３２１と平行に延びるとともに右側へ突出する厚板状をなしている。主面覆部３２０と上下の側部３２１，３２２とにより第２収容凹部３２３が形成されている。 Similarly, the second dielectric member 32 has a thin plate-like second main surface covering portion 320 with the longitudinal direction facing front and back and the width direction facing up and down, and a second provided on the upper side of the main surface covering portion 320. The upstream side portion 321 and the second downstream side portion 322 provided below the main surface covering portion 320 are integrally provided. The portions 320, 321, and 321 of the second dielectric member 32 may be separate from each other and bonded with an adhesive.
The upstream side portion 321 has a thick plate shape that extends back and forth along the upper end portion of the main surface covering portion 320 and protrudes to the right side. The downstream side portion 322 has a thick plate shape that extends in parallel with the second upstream side portion 321 along the lower end portion of the main surface covering portion 320 and protrudes to the right side. A second housing recess 323 is formed by the main surface covering portion 320 and the upper and lower side portions 321 and 322.

２つの誘電部材３１，３２の主面覆部３１０，３２０どうしが左右に対向され、上流側部３１１，３２１どうしが左右に対向され、下流側部３１２，３２２どうしが左右に対向されている。 The main surface covering portions 310 and 320 of the two dielectric members 31 and 32 are opposed to each other left and right, the upstream side portions 311 and 321 are opposed to each other left and right, and the downstream side portions 312 and 322 are opposed to each other right and left.

図１に示すように、第１誘電部材３１の収容凹部３１３に第１電極２１が収容されている。電極２１の第２電極２２を向く第１主面２１ａが、収容凹部３１３の内奥面（第１主面覆部３１０の裏面）に当接され、第１主面覆部３１０で覆われている。電極２１の上面（上流側の端部）が、上流側部３１１の下面に当接されている。電極２１の下面（下流側の端部）と収容凹部３１３の下面との間には絶縁隙間が形成されている。 As shown in FIG. 1, the first electrode 21 is housed in the housing recess 313 of the first dielectric member 31. The first main surface 21 a of the electrode 21 facing the second electrode 22 is in contact with the inner back surface of the housing recess 313 (the back surface of the first main surface covering portion 310) and is covered with the first main surface covering portion 310. Yes. The upper surface (upstream end portion) of the electrode 21 is in contact with the lower surface of the upstream side portion 311. An insulating gap is formed between the lower surface (downstream end portion) of the electrode 21 and the lower surface of the housing recess 313.

第２誘電部材３１の収容凹部３２３に第２電極２２が収容されている。電極２２の第１電極２１を向く第２主面２２ａが、収容凹部３２３の内奥面（第２主面覆部３２０の裏面）に当接され、第２主面覆部３２０で覆われている。電極２２の上面（上流側の端部）が、上流側部３２１の下面に当接されている。電極２２の下面（下流側の端部）と、収容凹部３２３の下面との間には絶縁隙間が形成されている。 The second electrode 22 is housed in the housing recess 323 of the second dielectric member 31. The second main surface 22a of the electrode 22 facing the first electrode 21 is in contact with the inner back surface of the housing recess 323 (the back surface of the second main surface cover 320) and is covered with the second main surface cover 320. Yes. The upper surface (upstream end portion) of the electrode 22 is in contact with the lower surface of the upstream side portion 321. An insulating gap is formed between the lower surface (downstream end) of the electrode 22 and the lower surface of the housing recess 323.

図示は省略するが、ヘッド本体１１には、電極２１，２２及び誘電部材３１，３２の保持部が設けられている。この保持部は、電極２１，２２どうし（及び／又は誘電部材３１，３２どうし）を互いに接近方向に押圧するネジ部材などからなる押圧機構を含んでいる。これにより、電極２１が誘電部材３１の収容凹部３１３の奥側の内面に押し当てられ密着され、電極２２が誘電部材３２の収容凹部３２３の奥側の内面に押し当てられ密着されている。また、誘電部材３１の後記凸部３１ｂ，３１ｄ，３１ｅが誘電部材３２に押し当てられ密着されている。
上記押圧機構に代えて、接着剤によって、電極２１，２２を誘電部材３１，３２の収容凹部３１３，３２３の内周面に接着することにしてもよい。 Although not shown, the head body 11 is provided with holding portions for the electrodes 21 and 22 and the dielectric members 31 and 32. The holding portion includes a pressing mechanism including a screw member that presses the electrodes 21 and 22 (and / or the dielectric members 31 and 32) toward each other. As a result, the electrode 21 is pressed and brought into close contact with the inner surface on the back side of the housing recess 313 of the dielectric member 31, and the electrode 22 is pressed and brought into close contact with the inner surface on the back side of the housing recess 323 of the dielectric member 32. Further, the post-projections 31b, 31d, 31e of the dielectric member 31 are pressed against and closely contact the dielectric member 32.
Instead of the pressing mechanism, the electrodes 21 and 22 may be bonded to the inner peripheral surfaces of the housing recesses 313 and 323 of the dielectric members 31 and 32 by an adhesive.

図４に示すように、誘電部材３２の誘電部材３１との対向面３２４は、全体が第１方向と直交する垂直な平坦面になっている。この平坦面３２４のうち、中央の主面覆部３２０にて構成された部分３２ｆが、第１誘電部材３１の主面覆部３１０と対向し、上側の上流側部３２１にて構成された部分３２ｇが、第１誘電部材３１の上流側部３１１と対向し、下側の下流側部３２２にて構成された部分３２ｈが、第１誘電部材３１の下流側部３１２と対向する。これら平坦部分３２ｆ〜３２ｈは、互いに段差なく連なっている。 As shown in FIG. 4, the opposing surface 324 of the dielectric member 32 facing the dielectric member 31 is a vertical flat surface that is orthogonal to the first direction as a whole. Of the flat surface 324, the portion 32 f formed by the central main surface covering portion 320 is opposed to the main surface covering portion 310 of the first dielectric member 31 and is formed by the upper upstream portion 321. 32 g faces the upstream portion 311 of the first dielectric member 31, and a portion 32 h formed by the lower downstream portion 322 faces the downstream portion 312 of the first dielectric member 31. These flat portions 32f to 32h are connected to each other without a step.

一方、図３に示すように、誘電部材３１における誘電部材３２を向く面には、凹凸３１ａ〜３１ｅが一体形成されている。詳述すると、誘電部材３１の長手方向の両側部には、それぞれ誘電部材３２へ突出する幅広の肩部３１ｅが設けられている。図２（ｂ）に示すように、これら肩部３１ｅに、誘電部材３２の平坦面３２４の長手方向の両端部がそれぞれ当接されている。 On the other hand, as shown in FIG. 3, irregularities 31 a to 31 e are integrally formed on the surface of the dielectric member 31 facing the dielectric member 32. More specifically, wide shoulder portions 31 e projecting toward the dielectric member 32 are provided on both side portions of the dielectric member 31 in the longitudinal direction. As shown in FIG. 2B, both end portions of the flat surface 324 of the dielectric member 32 in the longitudinal direction are in contact with the shoulder portions 31e.

図２（ａ）及び図３に示すように、誘電部材３１の上流側部３１１における誘電部材３２を向く面には、上流凹部３１ａと上流凸部３１ｂが複数形成されている。これら上流凹部３１ａ及び上流凸部３１ｂは、上下に延びる条状をなし、誘電部材３１の長手方向（第２方向）に交互に、かつ等間隔置きに並べられている。上流凸部３１ｂによって、隣り合う上流凹部３１ａ，３１ａが仕切られている。 As shown in FIGS. 2A and 3, a plurality of upstream concave portions 31 a and upstream convex portions 31 b are formed on the surface of the upstream side portion 311 of the dielectric member 31 facing the dielectric member 32. The upstream concave portion 31a and the upstream convex portion 31b have a strip shape extending vertically, and are arranged alternately at equal intervals in the longitudinal direction (second direction) of the dielectric member 31. Adjacent upstream concave portions 31a and 31a are partitioned by the upstream convex portion 31b.

図１及び図３に示すように、上流凹部３１ａの上端部は、誘電部材３１の上端面に達し、上流凸部３１ｂの上端部は、誘電部材３１の上端面と面一になっている。凹凸部３１ａ，３１ｂの下端部は、上流側部３１１と主面覆部３１０との連通部の附近に位置されている。 As shown in FIGS. 1 and 3, the upper end of the upstream recess 31 a reaches the upper end surface of the dielectric member 31, and the upper end of the upstream convex portion 31 b is flush with the upper end surface of the dielectric member 31. The lower end portions of the concavo-convex portions 31 a and 31 b are positioned near the communication portion between the upstream side portion 311 and the main surface covering portion 310.

図１に示すように、上流凸部３１ｂは、誘電部材３２の上側の平坦面部分３２ｇに当接されている。上流凹部３１ａの誘電部材３２側の開口が、平坦面部分３２ｇによって塞がれている。
上流凹部３１ａの内部は、処理ガスの導入路１２となっている。図１に示すように、処理ガス源４からガス供給路４ａが処理ヘッド１０の上側部へ延び、各処理ガス導入路１２，１２…に連なっている。図示は省略するが、処理ヘッド１０の上側部には、ガス供給路４ａからの処理ガスを各処理ガス導入路１２，１２…に均等に分配するチャンバーや分岐路からなる処理ガス分配構造が設けられている。 As shown in FIG. 1, the upstream convex portion 31 b is in contact with the upper flat surface portion 32 g of the dielectric member 32. The opening on the dielectric member 32 side of the upstream recess 31a is closed by the flat surface portion 32g.
The interior of the upstream recess 31a serves as a processing gas introduction path 12. As shown in FIG. 1, a gas supply path 4a extends from the processing gas source 4 to the upper side of the processing head 10 and is connected to the processing gas introduction paths 12, 12,. Although not shown in the drawing, a processing gas distribution structure including a chamber and a branching path for equally distributing the processing gas from the gas supply path 4a to the processing gas introduction paths 12, 12,. It has been.

図２（ｃ）及び図３に示すように、誘電部材３１の下流側部３１２における誘電部材３２を向く面には、下流凹部３１ｃと下流凸部３１ｄが複数形成されている。これら下流凹部３１ｃ及び下流凸部３１ｄは、上下に延びる条状をなし、誘電部材３１の長手方向（第２方向）に交互に、かつ等間隔置きに並べられている。下流凸部３１ｄによって、隣り合う下流凹部３１ｃ，３１ｃが仕切られている。 As shown in FIGS. 2C and 3, a plurality of downstream concave portions 31 c and downstream convex portions 31 d are formed on the surface facing the dielectric member 32 in the downstream side portion 312 of the dielectric member 31. The downstream concave portions 31c and the downstream convex portions 31d have a strip shape extending vertically, and are arranged alternately at equal intervals in the longitudinal direction (second direction) of the dielectric member 31. Adjacent downstream concave portions 31c and 31c are partitioned by the downstream convex portion 31d.

図１及び図３に示すように、凹凸部３１ｃ，３１ｄの上端部は、主面覆部３１０と下流側部３１２との連通部の附近に位置されている。下流凸部３１ｄの下端部は、誘電部材３１の下端面と面一になり、下流凹部３１ｃの下端部は、誘電部材３１の下端面に達している。 As shown in FIGS. 1 and 3, the upper end portions of the concavo-convex portions 31 c and 31 d are positioned near the communication portion between the main surface covering portion 310 and the downstream side portion 312. The lower end portion of the downstream convex portion 31 d is flush with the lower end surface of the dielectric member 31, and the lower end portion of the downstream concave portion 31 c reaches the lower end surface of the dielectric member 31.

図１に示すように、下流凸部３１ｄは、誘電部材３２の下側の平坦面３２ｈに当接されている。下流凹部３１ｃの誘電部材３２側の開口が、平坦面部分３２ｈによって塞がれている。
下流凹部３１ｃの内部は、処理ガスの噴出路１４となっている。処理ガス噴出路１４の下端部は、処理ヘッド１０の下端面に開口され、被処理物配置部２ひいては被処理物Ｗに臨む噴出口となっている。 As shown in FIG. 1, the downstream convex portion 31 d is in contact with the lower flat surface 32 h of the dielectric member 32. The opening on the dielectric member 32 side of the downstream recess 31c is closed by the flat surface portion 32h.
The inside of the downstream recessed part 31c becomes the process gas ejection path 14. A lower end portion of the processing gas ejection path 14 is opened at a lower end surface of the processing head 10, and serves as a spout that faces the processing object arrangement portion 2 and the processing object W.

下流凸部３１ｄのピッチ及び数は、上流凸部３１ｂのピッチ及び数と等しく、下流凹部３１ｃのピッチ及び数は、上流凹部３１ａのピッチ及び数と等しい。また、各上流凸部３１ｂの真下に離れて下流凸部３１ｄが配置され、各上流凸部３１ｂの真下に離れて下流凹部３１ｃが配置されている。
凸部３１ｂ，３１ｄと肩部３１ｅの突出高さは、互いに等しく、例えば１〜２ｍｍ程度であり、これらの突出端面は、互いに同一の垂直な仮想平面上に位置されている。
凸部３１ｂ，３１ｄの幅は、肩部３１ｅの幅より十分に小さく、例えば４ｍｍ以下であり、好ましくは３ｍｍ以下になっている。
凹部３１ａ，３１ｃの幅は、２〜５ｍｍ程度が好ましい。 The pitch and number of the downstream convex portions 31d are equal to the pitch and number of the upstream convex portions 31b, and the pitch and number of the downstream concave portions 31c are equal to the pitch and number of the upstream concave portions 31a. Further, a downstream convex portion 31d is arranged directly below each upstream convex portion 31b, and a downstream concave portion 31c is arranged separately below each upstream convex portion 31b.
The protruding heights of the convex portions 31b and 31d and the shoulder portion 31e are equal to each other, for example, about 1 to 2 mm, and these protruding end surfaces are positioned on the same vertical virtual plane.
The widths of the convex portions 31b and 31d are sufficiently smaller than the width of the shoulder portion 31e, for example, 4 mm or less, and preferably 3 mm or less.
The width of the recesses 31a and 31c is preferably about 2 to 5 mm.

図１に示すように、電極２１，２２の上下方向の寸法は、上下の凸部３１ｂ，３１ｄ間の距離より小さく、例えば２０ｍｍ程度である。電極２１，２２の上端部は、上流凹凸部３１ａ，３１ｂより下方に離れて位置されている。凹凸部３１ａ，３１ｂと電極２１，２２の上端部との上下方向の離間距離Ｄ１は、好ましくは２ｍｍ以上である。 As shown in FIG. 1, the vertical dimension of the electrodes 21 and 22 is smaller than the distance between the upper and lower convex portions 31b and 31d, for example, about 20 mm. The upper ends of the electrodes 21 and 22 are positioned below the upstream uneven portions 31a and 31b. The vertical distance D1 between the uneven portions 31a and 31b and the upper ends of the electrodes 21 and 22 is preferably 2 mm or more.

電極２１，２２の下端部は、下流凹凸部３１ｃ，３１ｄより上方に離れて位置されている。電極２１，２２と凹凸部３１ｃ，３１ｄとの上下方向の離間距離Ｄ２は、好ましくは２ｍｍ以上である。 The lower ends of the electrodes 21 and 22 are positioned above the downstream uneven portions 31c and 31d. The vertical distance D2 between the electrodes 21 and 22 and the concavo-convex portions 31c and 31d is preferably 2 mm or more.

図１及び図３に示すように、誘電部材３１の上流凹凸部３１ａ，３１ｂと下流凹凸部３１ｃ，３１ｄとの間の誘電部材３２との対向面３１ｆは、凹凸が無く、平坦になっている。平坦面３１ｆは、主面覆部３１０の誘電部材３２との対向面全体を占めるとともに、その上端部は、上流側部３１１に及び、上流凹部３１ａの内底に段差無く連なっている。平坦面３１ｆの下端部は、主面覆部３１０と下流側部３１２との連通部附近に達し、下流凹部３１ｃの内底に段差無く連なっている。平坦面３１ｆの長手方向の両端部は、肩部３１ｅに達している。 As shown in FIGS. 1 and 3, the facing surface 31f of the dielectric member 31 between the upstream uneven portions 31a and 31b and the downstream uneven portions 31c and 31d is flat with no unevenness. . The flat surface 31f occupies the entire surface of the main surface covering portion 310 facing the dielectric member 32, and its upper end extends to the upstream side 311 and continues to the inner bottom of the upstream recess 31a without a step. The lower end portion of the flat surface 31f reaches the vicinity of the communicating portion between the main surface covering portion 310 and the downstream side portion 312 and is connected to the inner bottom of the downstream recessed portion 31c without a step. Both end portions in the longitudinal direction of the flat surface 31f reach the shoulder portion 31e.

第１誘電部材３１となるべきセラミックの平板を用意し、この平板の片面を削って、上下の凹部３１ａ，３１ｃ及び中央の平坦面３１ｆを形成し、これにより、凸部３１ｂ，３１ｄ及び肩部３１ｅが形成されるようにするとよい。 A ceramic flat plate to be the first dielectric member 31 is prepared, and one side of the flat plate is cut to form upper and lower concave portions 31a and 31c and a central flat surface 31f, whereby convex portions 31b and 31d and a shoulder portion are formed. 31e may be formed.

図１及び図２（ｂ）に示すように、誘電部材３１の平坦面３１ｆと誘電部材３２の中央の平坦面部分３２ｆとの間に、中間隙間３０ａが形成されている。中間隙間３０ａは、上下の凹凸部３１ａ〜３１ｄを分断するように、誘電部材３１，３２の長手方向に延びている。中間隙間３０ａの上側部分を介して、上流凹部３１ａの内部の下端部（処理ガス導入路１２の下流端）が互いに連ねられている。中間隙間３０ａの下側部分を介して、下流凹部３１ｃの内部の上端部（処理ガス噴出路１４の上流端）が互いに連ねられている。 As shown in FIGS. 1 and 2B, an intermediate gap 30 a is formed between the flat surface 31 f of the dielectric member 31 and the flat surface portion 32 f at the center of the dielectric member 32. The intermediate gap 30a extends in the longitudinal direction of the dielectric members 31 and 32 so as to divide the upper and lower uneven portions 31a to 31d. A lower end portion (downstream end of the processing gas introduction path 12) inside the upstream recessed portion 31a is connected to each other through an upper portion of the intermediate gap 30a. The upper end (the upstream end of the processing gas ejection path 14) inside the downstream recess 31c is connected to each other via the lower portion of the intermediate gap 30a.

上流凸部３１ｂの下端面によって中間隙間３０ａの上端縁が画成されている。下流凸部３１ｄの上端面によって中間隙間３０ａの下端縁が画成されている。肩部３１ｅの内端縁によって中間隙間３０ａの長手方向の両端縁が画成されている。
中間隙間３０ａの左右方向の厚さは、上下の凸部３１ｂ，３１ｄ及び肩部３１ｅの突出高さと等しく、例えば１〜２ｍｍ程度である。 The upper end edge of the intermediate gap 30a is defined by the lower end surface of the upstream convex portion 31b. The lower end edge of the intermediate gap 30a is defined by the upper end surface of the downstream convex portion 31d. Both end edges in the longitudinal direction of the intermediate gap 30a are defined by the inner edge of the shoulder 31e.
The thickness in the left-right direction of the intermediate gap 30a is equal to the protruding height of the upper and lower convex portions 31b, 31d and the shoulder portion 31e, and is, for example, about 1 to 2 mm.

上記構成のプラズマ処理装置１にて表面処理を行なう際は、被処理物Ｗを被処理物配置部２の上にセットする。
そして、処理ガス源４からの処理ガスを、ガス供給路４ａを経て処理ヘッド１０の各処理ガス導入路１２に導入する。この処理ガスは、各処理ガス導入路１２を経て、中間隙間３０ａに入り、互いに混ざり合う。したがって、処理ガスを複数の処理ガス導入路１２に厳密に均等に分配する必要はない。これにより、処理ガスの分配構造を簡単化することができる。 When the surface treatment is performed in the plasma processing apparatus 1 having the above-described configuration, the workpiece W is set on the workpiece arrangement portion 2.
Then, the processing gas from the processing gas source 4 is introduced into each processing gas introduction path 12 of the processing head 10 through the gas supply path 4a. This processing gas passes through each processing gas introduction path 12, enters the intermediate gap 30a, and mixes with each other. Therefore, it is not necessary to distribute the processing gas to the plurality of processing gas introduction paths 12 evenly. Thereby, the distribution structure of process gas can be simplified.

併行して、電源３から電極２１に電圧を供給する。これにより、電極２１，２２の間に電界が印加されて大気圧グロー放電が生成され、中間隙間３０ａの大部分が放電空間１３となり、該空間１３の処理ガスがプラズマ化される。誘電部材３１，３２の主面覆部３１０，３２０は、各電極２１，２２の対向面２１ａ，２２ａにおいて大気圧グロー放電を安定化させるための誘電体層としての役目を果たす。
放電空間１３となる中間隙間３０ａは、誘電部材３１，３２の平坦面３１ｆ，３２ｆどうし間に形成され、十分な放電面積を有しているため、放電開始電圧を高くする必要がない。これにより、電源３の負担を軽減することができる。
電極２１，２２の上下方向の寸法が誘電部材３１，３２の上側の凹凸部３１ａ，３１ｂと下側の凹凸部３１ｃ，３１ｄとの間の間隔より小さく、上下の凹凸部３１ａ〜３１ｄがそれぞれ電極２１，２２から上下に十分に（２ｍｍ以上）離間して位置されているため、電極２１，２２どうし間の電界中に凹凸部３１ａ〜３１ｄが介在しないようにすることができる。したがって、凹凸部３１ａ〜３１ｄの角に集中電界が形成されるのを回避でき、凹凸部３１ａ〜３１ｄの角からパーティクルが発生するのを防止することができる。
また、電極２１，２２の上下方向の寸法を小さくすることにより、単位面積あたりの電流密度を高めることができ、高濃度のプラズマ（活性種）を得ることができる。 In parallel, a voltage is supplied from the power source 3 to the electrode 21. As a result, an electric field is applied between the electrodes 21 and 22 to generate an atmospheric pressure glow discharge, and most of the intermediate gap 30a becomes the discharge space 13, and the processing gas in the space 13 is turned into plasma. The main surface covering portions 310 and 320 of the dielectric members 31 and 32 serve as dielectric layers for stabilizing the atmospheric pressure glow discharge on the facing surfaces 21a and 22a of the electrodes 21 and 22, respectively.
The intermediate gap 30a serving as the discharge space 13 is formed between the flat surfaces 31f and 32f of the dielectric members 31 and 32 and has a sufficient discharge area, so that it is not necessary to increase the discharge start voltage. Thereby, the burden of the power supply 3 can be reduced.
The vertical dimensions of the electrodes 21 and 22 are smaller than the distance between the upper uneven portions 31a and 31b and the lower uneven portions 31c and 31d of the dielectric members 31 and 32, and the upper and lower uneven portions 31a to 31d are electrodes. Since the electrodes 21 and 22 are sufficiently spaced above and below (2 mm or more), the uneven portions 31a to 31d can be prevented from interposing in the electric field between the electrodes 21 and 22. Therefore, it is possible to avoid the formation of a concentrated electric field at the corners of the uneven portions 31a to 31d, and it is possible to prevent the generation of particles from the corners of the uneven portions 31a to 31d.
Further, by reducing the vertical dimension of the electrodes 21 and 22, the current density per unit area can be increased, and high-concentration plasma (active species) can be obtained.

中間隙間３０ａ内でプラズマ化された処理ガスは、その後、噴出路１４ごとに分配される。そして、各噴出路１４に案内されて下方へ勢いよく噴き出され、被処理物Ｗに接触される。これによって、被処理物Ｗの表面上で反応が起き、所望の表面処理が行なわれる。上述したように、電極２１，２２の上下の幅を小さくすることにより、高濃度のプラズマを得、これを被処理物Ｗに吹きつけることにより、処理能力を十分の高めることができる。さらには、放電空間１３内でのパーティクルの発生が確実に防止されているため、処理品質を高めることができる。
電極２１，２２にクーロン引力や熱応力などが作用しても、上下の凸部３１ｂ，３１ｄによって放電空間１３の厚さ（左右方向の寸法）を一定に維持できる。特に、放電空間１３の長手方向の中央部分の厚さを確実に一定に維持することができる。別途、放電空間１３の厚さを維持する構造が不要であり、軽量化及び部品点数の削減を図ることができる。 The processing gas that has been turned into plasma in the intermediate gap 30a is then distributed to each ejection path 14. And it guides to each ejection path 14, is ejected vigorously below, and contacts the workpiece W. As a result, a reaction occurs on the surface of the workpiece W, and a desired surface treatment is performed. As described above, by reducing the upper and lower widths of the electrodes 21 and 22, a high-concentration plasma is obtained and sprayed on the workpiece W to sufficiently increase the processing capability. Furthermore, since the generation of particles in the discharge space 13 is reliably prevented, the processing quality can be improved.
Even if Coulomb attractive force or thermal stress acts on the electrodes 21 and 22, the thickness (the dimension in the left-right direction) of the discharge space 13 can be kept constant by the upper and lower convex portions 31b and 31d. In particular, the thickness of the central portion in the longitudinal direction of the discharge space 13 can be reliably maintained constant. Separately, a structure for maintaining the thickness of the discharge space 13 is unnecessary, and the weight can be reduced and the number of parts can be reduced.

次に、本発明の他の実施形態を説明する。以下の実施形態において既述した構成に関しては、図面に同一符号を付して説明を省略する。
図５及び図６は、第１誘電部材３１の変形例を示したものである。この誘電部材３１には、第１実施形態における上下の凹凸部３１ａ〜３１ｄのうち、下流凹凸部３１ｃ，３１ｄだけが設けられ、上流凹凸部３１ａ，３１ｂが設けられていない。
誘電部材３１における上流側部３１１の誘電部材３２との対向面３１ｇは、平坦面となり、主面覆部３１０の対向面３１ｆに段差無く連なっている。
２つの誘電部材３１，３２の平坦面３１ｇ，３２ｇどうしの間に１つの処理ガス導入路１２が形成されている。処理ガス導入路１２は、長手方向を前後方向に向けた面状をなし、中間隙間３０ａに一体に連通している。
この変形例では、下流凸部３１ｄによって中間隙間３０ａの厚さを一定に維持できるとともに、処理ガスの噴出の勢いを大きくでき、処理能力を向上させることができる。 Next, another embodiment of the present invention will be described. With respect to the configurations already described in the following embodiments, the same reference numerals are given to the drawings and description thereof will be omitted.
5 and 6 show modified examples of the first dielectric member 31. FIG. The dielectric member 31 is provided with only the downstream uneven portions 31c and 31d among the upper and lower uneven portions 31a to 31d in the first embodiment, and is not provided with the upstream uneven portions 31a and 31b.
The facing surface 31g of the upstream side portion 311 of the dielectric member 31 facing the dielectric member 32 is a flat surface and is continuous with the facing surface 31f of the main surface covering portion 310 without a step.
One processing gas introduction path 12 is formed between the flat surfaces 31 g and 32 g of the two dielectric members 31 and 32. The processing gas introduction path 12 has a planar shape with the longitudinal direction directed in the front-rear direction, and communicates integrally with the intermediate gap 30a.
In this modification, the thickness of the intermediate gap 30a can be kept constant by the downstream convex portion 31d, and the momentum of the processing gas can be increased, thereby improving the processing capability.

図７は、誘電部材３１，３２の長手方向の両端構造の変形例を示したものである。この変形例では、肩部３２ｅが、第１誘電部材３１に代えて、第２誘電部材３２に一体形成されている。第１誘電部材３１における誘電部材３２を向く面の長手方向の両端部は、上下の凹部３１ａ，３１ｃの内底面及び中央の平坦面３１ｆと面一の平面になっており、この平らな両端部に第２誘電部材３２の肩部３２ｅが当接されている。
第２誘電部材３２の両側の肩部３２ｅと第１誘電部材３１の長手方向の両端の下流凸部３１ｄとによって、両端の処理ガス噴出路１４がそれぞれ画成されている。
図７のおいては図示されていないが、第２誘電部材３２の両側の肩部３２ｅと第１誘電部材３１の長手方向の両端の上流凸部３１ｂとによって、両端の処理ガス導入路１２がそれぞれ画成されている。 FIG. 7 shows a modification of the longitudinal end structures of the dielectric members 31 and 32. In this modification, the shoulder portion 32 e is integrally formed with the second dielectric member 32 instead of the first dielectric member 31. Both ends in the longitudinal direction of the surface of the first dielectric member 31 facing the dielectric member 32 are flush with the inner bottom surface and the central flat surface 31f of the upper and lower recesses 31a and 31c. The shoulder portion 32e of the second dielectric member 32 is in contact with the second dielectric member 32.
The processing gas ejection paths 14 at both ends are defined by the shoulder portions 32e on both sides of the second dielectric member 32 and the downstream convex portions 31d at both ends in the longitudinal direction of the first dielectric member 31, respectively.
Although not shown in FIG. 7, the processing gas introduction paths 12 at both ends are formed by the shoulder portions 32 e on both sides of the second dielectric member 32 and the upstream convex portions 31 b at both ends in the longitudinal direction of the first dielectric member 31. Each is defined.

図８及び図９に示す変形例では、第２誘電部材３２にも第１誘電部材３１と同様の上流凹部３２ａ及び上流凸部３２ｂ、並びに下流凹部３２ｃ及び下流凸部３２ｄが一体形成されており、第２誘電部材３２が第１誘電部材３１と対称の形状になっている。凹部３１ａ，３２ａ，３１ｃ，３２ｃの深さは、第１実施形態の凹部３１ａ，３１ｃの半分程度であり、凸部３１ｂ，３２ｂ，３１ｄ，３２ｄの突出高さは、第１実施形態の凸部３１ｂ，３１ｄの半分程度である。
２つの誘電部材３１，３２の上流凸部３１ｂ，３２ｂどうしが突き当てられ、下流凸部３１ｄ，３２ｄどうしが突き当てられている。上流凹部３１ａ，３２ａどうしが合わさって第１実施形態と同程度の断面積の処理ガス導入路１２が形成されている。また、下流凹部３１ｃ，３２ｃどうしが合わさって第１実施形態と同程度の断面積の噴出路１４が画成されている。 In the modification shown in FIGS. 8 and 9, the second dielectric member 32 is also integrally formed with an upstream concave portion 32a and an upstream convex portion 32b similar to the first dielectric member 31, and a downstream concave portion 32c and a downstream convex portion 32d. The second dielectric member 32 is symmetrical with the first dielectric member 31. The depths of the recesses 31a, 32a, 31c, and 32c are about half of the recesses 31a and 31c of the first embodiment, and the protrusion heights of the protrusions 31b, 32b, 31d, and 32d are the protrusions of the first embodiment. It is about half of 31b and 31d.
The upstream convex portions 31b and 32b of the two dielectric members 31 and 32 are abutted and the downstream convex portions 31d and 32d are abutted. The upstream recesses 31a and 32a are combined to form a processing gas introduction passage 12 having a cross-sectional area similar to that of the first embodiment. Further, the downstream recesses 31c and 32c are combined to define the ejection passage 14 having the same cross-sectional area as that of the first embodiment.

本発明は、上記実施形態に限定されるものでなく、種々の改変をなすことができる。
例えば、実施形態では、上下の凹部３１ａ，３１ｃどうしが鉛直な一直線上に配置されていたが、誘電部材３１の長手方向にずれていてもよい。上下の凸部３１ｂ、３１ｄどうしが誘電部材３１の長手方向にずれていてもよい。上側の凹凸部３１ａ，３１ｂのピッチ及び数が、下側の凹凸部３１ｃ，３１ｄのピッチ及び数と異なっていてもよい。
上側の凹凸部３１ａ，３１ｂの下端部が、電極３１，３２の上端部と同じ高さに位置されていてもよく、電極３１，３２の上端部より少し下に位置されていてもよい。下の凹凸部３１ｃ，３１ｄの上端部が、電極３１，３２の下端部と同じ高さに位置されていてもよく、電極３１，３２の下端部より少し上に位置されていてもよい。
凹凸部３１ａ〜３１ｄは、上下に延びていなくてもよく、スポット状になっていてもよい。
以上の改変は、図８及び図９の変形例における第２誘電部材３２の凹凸部３２ａ〜３２ｄについても同様である。
第１、第２誘電部材のうち一方の誘電部材に上流凹部及び上流凸部が設けられる一方、他方の誘電部材に下流凹部及び下流凸部が設けられていてもよい。
図１０に示すように、一方の誘電部材３１（又は３２）に設けた幅広の凹部３１ｃ（又は３２ｃ）の中央部に、他方の誘電部材に設けた凸部３２ｄ（又は３１ｄ）が挿入され。上記幅広の凹部が２つの通路１４に分かれるようにしてもよい。（図１０は、下流側部３１２，３２２の断面構造を示したものであるが、上流側部３１１，３２１についても同様の構造にしてもよい。）
誘電部材３１，３２はそれぞれ一体物である必要はなく、主面覆部３１０，３２０と、上流側部３１１，３２１と、下流側部３１２，３２２とが、互いに別体になっており、接着剤にて接着されたり、ネジ止めされたりするようになっていてもよい。
平行平板電極２１，２２は、第１主面２１ａと第２主面２２ａとがほぼ平行であればよい。第１電極２１及び第２電極２２の断面形状は特に限定されず、断面四角形以外の多角形であってもよい。第１電極２１及び第２電極２２は、薄膜やフィルム状であってもよい。
本発明は、洗浄、表面改質（親水化、撥水化等）、エッチング、成膜などの種々の表面処理に適用可能である。大気圧近傍下でのプラズマ処理に限られず、真空下でのプラズマ処理にも適用可能である。 The present invention is not limited to the above embodiment, and various modifications can be made.
For example, in the embodiment, the upper and lower concave portions 31 a and 31 c are arranged on a vertical straight line, but may be shifted in the longitudinal direction of the dielectric member 31. The upper and lower protrusions 31 b and 31 d may be displaced in the longitudinal direction of the dielectric member 31. The pitch and number of the upper uneven portions 31a and 31b may be different from the pitch and number of the lower uneven portions 31c and 31d.
The lower end portions of the upper uneven portions 31 a and 31 b may be positioned at the same height as the upper end portions of the electrodes 31 and 32, or may be positioned slightly below the upper end portions of the electrodes 31 and 32. The upper end portions of the lower concavo-convex portions 31 c and 31 d may be positioned at the same height as the lower end portions of the electrodes 31 and 32, or may be positioned slightly above the lower end portions of the electrodes 31 and 32.
The concavo-convex portions 31a to 31d do not have to extend vertically, and may have a spot shape.
The above modification is the same for the uneven portions 32a to 32d of the second dielectric member 32 in the modified examples of FIGS.
One of the first and second dielectric members may be provided with an upstream concave portion and an upstream convex portion, while the other dielectric member may be provided with a downstream concave portion and a downstream convex portion.
As shown in FIG. 10, the convex part 32d (or 31d) provided in the other dielectric member is inserted into the central part of the wide concave part 31c (or 32c) provided in one dielectric member 31 (or 32). The wide concave portion may be divided into two passages 14. (FIG. 10 shows the cross-sectional structure of the downstream side portions 312 and 322, but the upstream side portions 311 and 321 may have the same structure.)
The dielectric members 31 and 32 do not need to be integrated with each other, and the main surface covering portions 310 and 320, the upstream side portions 311 and 321 and the downstream side portions 312 and 322 are separated from each other and bonded. It may be bonded with an agent or screwed.
The parallel plate electrodes 21 and 22 only need to have the first main surface 21a and the second main surface 22a substantially parallel to each other. The cross-sectional shapes of the first electrode 21 and the second electrode 22 are not particularly limited, and may be a polygon other than a rectangular cross section. The first electrode 21 and the second electrode 22 may be a thin film or a film.
The present invention can be applied to various surface treatments such as cleaning, surface modification (hydrophilization, water repellency, etc.), etching, and film formation. The present invention is not limited to plasma processing near atmospheric pressure, and can also be applied to plasma processing under vacuum.

この発明は、例えばフラットパネルディスプレイ用のガラス基板や半導体基板の製造工程における表面処理に適用可能である。 The present invention is applicable to, for example, surface treatment in a manufacturing process of a glass substrate for a flat panel display or a semiconductor substrate.

本発明の第１実施形態に係る大気圧プラズマ処理装置を示す正面断面図である。It is front sectional drawing which shows the atmospheric pressure plasma processing apparatus which concerns on 1st Embodiment of this invention. （ａ）は、図１のIIａ-IIａ線に沿う、上記大気圧プラズマ処理装置の処理ヘッドの平面断面図であり、（ａ）は、図１のIIｂ-IIｂ線に沿う、上記処理ヘッドの平面断面図であり、（ｃ）は、図１のIIｃ-IIｃ線に沿う、上記処理ヘッドの平面断面図である。(A) is the plane sectional view of the processing head of the above-mentioned atmospheric pressure plasma processing device which meets the IIa-IIa line of Drawing 1, and (a) of the above-mentioned processing head which meets the IIb-IIb line of Drawing 1 It is a plane sectional view, and (c) is a plane sectional view of the processing head along the line IIc-IIc in FIG. 上記処理ヘッドの分解斜視図である。It is a disassembled perspective view of the said processing head. 上記処理ヘッドを図３とは別の角度から見た分解斜視図である。It is the disassembled perspective view which looked at the said processing head from the angle different from FIG. 上記処理ヘッドの第１変形例を示す正面断面図である。It is front sectional drawing which shows the 1st modification of the said processing head. 図５の処理ヘッドの第１誘電部材の斜視図である。FIG. 6 is a perspective view of a first dielectric member of the processing head of FIG. 5. 上記処理ヘッドの第２変形例を示し、下流側部の高さにおける平面断面図である。It is a plane sectional view in the height of a downstream part, showing the 2nd modification of the above-mentioned processing head. 上記処理ヘッドの第３変形例を示す正面断面図である。It is front sectional drawing which shows the 3rd modification of the said processing head. 図８のVIII−VIII線に沿う平面断面図である。It is a plane sectional view which meets a VIII-VIII line of FIG. 第１、第２誘電部材の凹凸構造の変形例を示し、下流側部の高さにおける平面断面図である。It is a plane sectional view in the height of the downstream part, showing a modification of the uneven structure of the first and second dielectric members.

Explanation of symbols

１大気圧プラズマ処理装置
２被処理物配置部
３電源
４処理ガス源
４ａガス供給路
１０処理ヘッド
１１ヘッド本体
１２導入路
１３放電空間
１４噴出路
２１第１電極
２１ａ第１主面
２２第２電極
２２ａ第２主面
３０ａ中間隙間
３１第１誘電部材
３１０第１主面覆部
３１１第１上流側部
３１２第１下流側部
３１３第１収容凹部
３１ａ上流凹部
３１ｂ上流凸部
３１ｃ下流凹部
３１ｄ下流凸部
３１ｅ肩部
３１ｆ第１主面覆部の平坦面
３１ｇ第１上流側部の平坦面
３２第２誘電部材
３２０第２主面覆部
３２１第２上流側部
３２２第２下流側部
３２３第２収容凹部
３２４第２誘電部材の平坦面
３２ｅ肩部
３２ａ上流凹部
３２ｂ上流凸部
３２ｃ下流凹部
３２ｄ下流凸部
３２ｆ第２主面覆部の平坦面
３２ｇ第２上流側部の平坦面
３２ｈ第２下流側部の平坦面
Ｗ被処理物 DESCRIPTION OF SYMBOLS 1 Atmospheric pressure plasma processing apparatus 2 To-be-processed object arrangement | positioning part 3 Power supply 4 Processing gas source 4a Gas supply path 10 Processing head 11 Head main body 12 Introduction path 13 Discharge space 14 Ejection path 21 1st electrode 21a 1st main surface 22 2nd electrode 22a Second main surface 30a Intermediate gap 31 First dielectric member 310 First main surface covering portion 311 First upstream side portion 312 First downstream side portion 313 First receiving recess 31a Upstream recess 31b Upstream projection 31c Downstream recess 31d Downstream projection Portion 31e shoulder 31f flat surface 31g of first main surface covering portion first upstream surface flat surface 32 second dielectric member 320 second main surface covering portion 321 second upstream side portion 322 second downstream side portion 323 second Housing concave portion 324 Flat surface 32e of second dielectric member Shoulder portion 32a Upstream concave portion 32b Upstream convex portion 32c Downstream concave portion 32d Downstream convex portion 32f Flat surface 32g of second main surface covering portion Flat surface 32 of the second upstream side portion h Flat surface W on the second downstream side

Claims

In an apparatus for performing plasma surface treatment by converting the processing gas into plasma in the discharge space and ejecting the gas in one direction, contacting the object to be processed disposed in the object disposition portion downstream of the discharge space in the ejection direction,
(A) first and second electrodes opposed to each other in a first direction intersecting the ejection direction;
(B) a first main surface covering portion that covers the first main surface of the first electrode facing the second electrode, and a first main surface covering portion that is downstream of the first electrode in the ejection direction and continuous with the first main surface covering portion. A first dielectric member made of a solid dielectric having one downstream side part;
(C) a second main surface covering portion that covers the second main surface of the second electrode facing the first electrode, and a second main surface covering portion that is downstream of the second electrode in the ejection direction from the second electrode. A second dielectric member made of a solid dielectric having two downstream sides;
The first main surface covering portion and the second main surface covering portion have flat surfaces that face each other in the first direction and form an intermediate gap to be the discharge space between each other,
The first downstream side portion and the second downstream side portion are opposed to each other in the first direction, and at least one of the downstream side portions is integrally formed with the one downstream side portion and the other. Downstream protrusions that are in contact with the downstream side portion and downstream recesses are alternately formed in the second direction intersecting the ejection direction and the first direction,
And if the inside of the downstream recess arranged in the second direction becomes communicated with each other via the intermediate gap,
The plasma processing apparatus characterized in that the inside of each downstream recess serves as an ejection path for ejecting the processing gas from the intermediate gap to the workpiece placement portion.

The plasma processing apparatus according to claim 1, wherein the downstream convex portion and the downstream concave portion have a strip shape extending along the ejection direction.

3. The downstream end portion of the first electrode or the second electrode is located farther upstream in the ejection direction than the downstream convex portion and the downstream concave portion. Plasma processing equipment.

The downstream convex portion and the downstream concave portion are formed only on the first downstream side portion,
The plasma processing apparatus according to claim 1, wherein a surface of the second downstream side facing the first downstream side is flat.

The first dielectric member further includes a first upstream side portion connected to the first main surface covering portion on the upstream side in the ejection direction from the first electrode, and the second dielectric member is formed from the second electrode. A second upstream side portion connected to the second main surface covering portion on the upstream side in the ejection direction;
The first upstream side portion and the second upstream side portion are opposed to each other in the first direction, and the opposite surface of at least one upstream side portion is integrated with the one upstream side portion and the other. Upstream convex portions and upstream concave portions that are in contact with the upstream side portion of the second portion are alternately formed in the second direction,
And if the inside of the upstream recess arranged in the second direction becomes communicated with each other via the intermediate gap,
The plasma processing apparatus according to any one of claims 1 to 4, wherein the inside of each upstream recess serves as an introduction path for guiding a processing gas to the intermediate gap.

The plasma processing apparatus according to claim 5, wherein the upstream convex portion and the upstream concave portion have a strip shape extending along the ejection direction.

The plasma processing according to claim 5 or 6, wherein the upstream end portion of the first electrode or the second electrode is located farther downstream than the upstream convex portion and the upstream concave portion. apparatus.

The upstream convex portion and the upstream concave portion are formed only on the first downstream side portion,
The plasma processing apparatus according to claim 5, wherein a surface of the second upstream side portion facing the first upstream side portion is flat.