JP2014099246A - Plasma processing apparatus and plasma processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of selectively removing a coating covering over an object to be processed at a high speed while controlling oxidation of the surface of the object to be processed.SOLUTION: A coating removal apparatus 1 comprises: atmospheric pressure plasma processing units 15A and 15B that apply a plasma of a mixed gas (Ar/O) containing Oas a reactive gas to a wire 2; and atmospheric pressure plasma processing units 16A and 16B that apply a plasma of a mixed gas (Ar/H) containing Has a reactive gas to the wire 2. The plasma of the mixed gas (Ar/O) containing Oas the reactive gas dissolves the coating 4. The plasma of the mixed gas (Ar/H) containing Has the reactive gas reduces the surface of the core material 3, 3 and oxide film is removed.

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method for removing a coating from a material to be processed.

  As a method for removing a polyimide coating on a wire, a method of physically scraping off with a blade or a reuter is known. However, this method takes a long time to remove the coating and is not efficient. Also known is a method of removing the polyimide coating by carbonization with combustion gas or electric discharge (see Patent Document 1). However, this method tends to cause surface oxidation when the core material of the wire is copper or the like. If the surface of the core material such as copper is oxidized at the time of removing the coating, it causes a problem at the time of soldering. In order to prevent oxidation of the surface of the core material, it is necessary to take a sufficient time for removing the coating, which makes it difficult to remove the coating at a high speed.

  In Patent Document 2, a gas is supplied into an insulating chamber, high-frequency power is supplied from upper and lower electrodes to generate atmospheric pressure plasma, and an object to be processed is placed in close proximity to the atmospheric pressure plasma to chemically coat the coating. A method for disassembly and removal is described. However, in this method, it is necessary to dispose the object to be processed in a narrow chamber, and it is not possible to selectively remove the coating on a desired part of the object to be processed.

  When joining a wire to an electronic circuit or a component, generally, the wire is directly immersed in a soldering iron to peel off the coating. However, there are problems such as elution of the wire from the part where the coating has been removed into the soldering iron and poor bonding due to the coating residue.

JP 2001-124931 A JP 2007-59305 A

  An object of the present invention is to selectively and rapidly remove a coating covering a workpiece by plasma treatment while suppressing oxidation of the surface of the workpiece.

According to a first aspect of the present invention, a holding unit that holds an object to be processed having a coating made of an organic material, an inductively coupled plasma generating unit that blows out a primary plasma made of an inductively coupled plasma of a first inert gas, A plasma expanding section for generating a first secondary plasma composed of a mixed gas formed into a plasma by colliding the mixed gas region of the _second inert gas and O ₂ gas and the primary plasma, A first atmospheric pressure plasma irradiation unit for irradiating the object to be processed with the first secondary plasma, a holding part for holding the object to be processed, and an inductively coupled plasma of the first inert gas. An inductively coupled plasma generating section for blowing out primary plasma; and a second secondary comprising a mixed gas that is converted into plasma by colliding the mixed gas region of the _second inert gas and H ₂ gas with the primary plasma. The And a plasma expansion unit which generates a Zuma, to provide a plasma processing apparatus and a second atmospheric pressure plasma irradiation unit that irradiates the second secondary plasma in the processing object.

In the first atmospheric pressure plasma irradiation part, the primary plasma (Ar plasma) from the inductively coupled plasma generation part is a mixed gas region of the second inert gas and the reactive gas (Ar gas and O ₂ gas) in the plasma development part. The first secondary plasma (Ar plasma) expanded by exciting the second inert gas (Ar gas) in the mixed gas. The first secondary plasma (Ar plasma) activates an element (oxygen) constituting the reactive gas. The activated oxygen is held in the holding unit, and a chemical reaction is performed on the surface of the object to be processed by the coating to decompose and remove the coating.

In the second atmospheric pressure plasma irradiation part, the primary plasma (Ar plasma) from the inductively coupled plasma generating part is a mixed gas region of the second inert gas and the reactive gas (Ar gas and H ₂ gas) in the plasma developing part. The first secondary plasma (Ar plasma) expanded by exciting the second inert gas (Ar gas) in the mixed gas. The first secondary plasma (Ar plasma) activates the element (hydrogen) constituting the reactive gas. The activated hydrogen undergoes a chemical reaction on the surface of the object to be oxidized when the coating is removed in the first atmospheric pressure plasma processing unit, and the oxide film is reduced and removed.

  Preferably, for each of the first and second atmospheric pressure plasma irradiation units, a mask disposed between the atmospheric pressure plasma irradiation unit and limiting an irradiation region of the secondary plasma to the object to be processed; A ground electrode disposed on a side opposite to the atmospheric pressure plasma irradiation unit and the mask with respect to the object to be processed;

  More preferably, the object to be processed is a wire, and further includes a tension applying unit that applies tension to the wire held by the holding unit.

According to a second aspect of the present invention, a primary plasma composed of inductively coupled plasma of a first inert gas is generated, and the generated primary plasma collides with a mixed gas of the _second inert gas and O ₂ gas. Generating a first secondary plasma made of a mixed gas that has been made into plasma by irradiating the workpiece having a coating made of an organic material with the first secondary plasma, and inductively coupling the first inert gas A primary plasma composed of a type plasma is generated, and the generated secondary plasma collides with the mixed gas of the _second inert gas and H ₂ gas, thereby generating a second secondary plasma composed of a plasma mixture. A plasma processing method is provided in which the second secondary plasma is irradiated onto a region of the workpiece that has been irradiated with the first secondary plasma.

According to the plasma processing apparatus and the plasma processing method of the present invention, the first secondary plasma obtained by converting the mixed gas of the inert gas and the O ₂ gas into plasma is applied to the portion of the object to be processed that is defined by the mask. Irradiation from the opposite side of the ground electrode, followed by irradiation with a second secondary plasma that is a plasma of a mixed gas of inert gas and H ₂ gas. It can be removed selectively and at high speed.

The schematic diagram of the coating | coated removal apparatus which concerns on embodiment of this invention. The schematic diagram of an atmospheric pressure plasma irradiation part. A typical sectional view around a mixer. The typical perspective view of a cooling unit. The typical partial cross section figure of the holding | maintenance part and mask of an atmospheric pressure plasma irradiation part. The perspective view of a wire.

  FIG. 1 shows a coating removal apparatus (plasma processing apparatus) 1 according to an embodiment of the present invention. This coating removal apparatus 1 removes coating on the surface of an object to be processed by plasma processing. In the present embodiment, the workpiece to be covered is the wire 2 schematically shown in FIG. The wire 2 includes two core members 3 and 3 made of copper in the present embodiment and a coating 4 made of a polyimide resin that covers the core members 3 and 3. The diameter of the core materials 3 and 3 is about 0.03 mm or more and 0.1 or less mm, for example. Moreover, the thickness of the coating | cover 4 is 15 micrometers or more and 30 micrometers or less, for example. The material of the core materials 3 and 3 is not limited to copper, and may be other metals such as nickel. The material of the coating 4 is not limited to imide resins such as polyimide, and other organic materials may be used. In the present embodiment, the two core members 3 and 3 are arranged side by side and the outer periphery thereof is covered with the coating 4. There may be. Further, in the present embodiment, the core material 3 itself is a single wire, but the core material may be composed of a plurality of core wires.

  The wire 2 is unwound from the supply unit 11 and is wound around the collection unit 12 after the coating is removed. The supply unit 11 includes a drum 11a around which the wire 2 before the coating removal process is wound, and a drive mechanism 11b that rotationally drives the drum 11a in a direction in which the wire 2 is unwound. The recovery unit 12 includes a drum 12a for winding the wire rod after removal of the coating, and a drive mechanism 12b that rotationally drives the drum 12a in the direction of winding the wire rod 2.

  Applying tension to apply tension to the wire 2 at a position adjacent to the supply unit 11 on the downstream side in the feed direction of the wire 2 and on a position adjacent to the recovery unit 12 on the upstream side in the feed direction of the wire 2 Portions 13A and 13B are provided. These tension applying portions 13A and 13B are respectively a pair of fixed rollers 13b and 13b rotatably supported by a fixed support shaft 13a, and a movable support shaft 13d movable on a guide rail 13c extending in the vertical direction. A movable roller 13e is provided that is rotatably supported. The movable roller 13e is disposed between the pair of fixed rollers 13b and 13b. Tension is applied to the wire 2 wound around the fixed rollers 13b and 13b and the movable roller 13e as the movable roller 13e moves up and down. As long as an appropriate tension can be applied to the wire 2, the specific configuration of the tension applying portions 13 </ b> A and 13 </ b> B is not limited to a specific one.

  In the path of the wire 2 from the tension applying unit 13A on the supply unit 11 side to the tension applying unit 13B on the recovery unit 12 side, the cooling unit 14A, the atmospheric pressure plasma irradiation units 15A and 15B, and the atmospheric pressure plasma irradiation units 16A and 16B. , And a cooling unit 14B are sequentially provided.

  Referring also to FIG. 4, the cooling units 14A and 14B include a cooling member 14b that is cooled by, for example, a Peltier element, on the pedestal 14a. A through hole 14c is formed in the cooling member 14b, and the wire 2 is cooled by direct or indirect heat transfer from the cooling member 14b. As long as the wire 2 can be appropriately cooled, the specific configuration of the cooling unit 14 is not particularly limited.

  As will be described later, in the atmospheric pressure plasma irradiation units 15A and 15B, plasma is irradiated to the portions exposed from the openings 22a of the mask 22 of the wire 2. The heat of the part irradiated with the plasma of the wire 2 remains in the wire 2. The cooling unit 14A disposed on the upstream side in the feed direction of the wire 2 with respect to the atmospheric pressure plasma irradiation units 15A and 15B receives heat from the portion irradiated with the plasma of the wire 2 in the atmospheric pressure plasma irradiation units 15A and 15B. To suppress or reduce the transmission to the upstream side. As a result, the coating 4 is carbonized and the coating 4 is melted or melted in the wire 2 upstream of the portion irradiated with plasma by heat transmitted from the portion irradiated with the plasma of the wire 2 in the atmospheric pressure plasma irradiation portions 15A and 15B. Expansion of an unstable portion due to softening can be suppressed.

  As will be described later, in the atmospheric pressure plasma irradiation sections 16A and 16B, plasma is irradiated to the portions exposed from the openings 22a of the mask 22 of the wire 2. The heat of the part irradiated with the plasma of the wire 2 remains in the wire 2. The cooling unit 14B disposed downstream of the atmospheric pressure plasma irradiation units 16A and 16B in the feeding direction of the wire 2 receives heat from the portion irradiated with the plasma of the wire 2 by the atmospheric pressure plasma irradiation units 16A and 16B. The transmission to the downstream side is suppressed or reduced. As a result, the coating 4 is carbonized and the coating 4 is melted or melted in the wire 2 downstream of the portion irradiated with plasma by heat transmitted from the portion irradiated with the plasma of the wire 2 in the atmospheric pressure plasma irradiation sections 16A and 16B. Expansion of an unstable portion due to softening can be suppressed. Further, as will be described later, the cooling unit 14B cools the portion of the wire 2 from which the oxide film on the surface of the core material 3 has been reduced and removed by the plasma irradiation in the atmospheric pressure plasma irradiation units 16A and 16B. Prevents reoxidation. Note that only one of the upstream cooling unit 14A and the downstream cooling unit 14B may be provided as long as the temperature rise of the wire 2 due to plasma irradiation can be appropriately suppressed. Conversely, in addition to the cooling units 14A and 14B, another cooling unit may be provided between the atmospheric pressure plasma irradiation units 15A and 15B and the atmospheric pressure plasma irradiation units 16A and 16B.

In the atmospheric pressure plasma irradiation units 15A and 15B, the former irradiates the secondary plasma 47 described later to the upper side of the wire 2 from above, while the latter lowers the secondary plasma 47 to the lower side of the wire 2. It differs only at the point of irradiation. In other words, the atmospheric pressure plasma irradiation units 15A and 15B are different only in that the arrangement posture in the vertical direction is upside down. Similarly, the atmospheric pressure plasma irradiation units 16A and 16B are different only in that the arrangement posture in the vertical direction is upside down. The atmospheric pressure plasma irradiation units 15A and 15B and the atmospheric pressure plasma irradiation units 16A and 16B differ in that the former uses Ar / O ₂ as a mixed gas, whereas the latter uses Ar / H ₂ as a mixed gas. However, other configurations are the same. Hereinafter, the atmospheric pressure plasma irradiation unit 15A will be described, and the remaining three atmospheric pressure plasma irradiation units 15B, 16A, and 16B will be referred to as necessary.

  The atmospheric pressure plasma irradiation unit 15A includes a plasma irradiation device 20, a holding unit 21, and a mask 22.

  3 and 5, the holding portion 21 includes a bottom wall 21a and a pair of side walls 21b and 21b facing each other and extending upward from the bottom wall 21a. A cutout 21c for allowing the wire 2 to pass therethrough is formed at the upper ends of the individual side walls 21b, 21b. A ground electrode 23 is disposed on the bottom wall 21a. The gap between the ground electrode 23 and the wire 2 passing through the holding portion 21 is set to about 0.5 mm to 1 mm. A mask 22 is attached to the upper ends of the side walls 21b and 21b. The mask 22 has insulating properties and heat resistance, and is made of, for example, a ceramic material. In the center of the mask 22, an opening 22 a for defining a region of the wire 2 to be irradiated with plasma from the plasma irradiation apparatus 20 is provided. The width of the opening 22a is set to, for example, about 2 mm to 5 mm. The specific structures of the holding unit 21, the mask 22, and the ground electrode 23 are not limited to those illustrated. Note that the wire 2 may be held and positioned by a clamp mechanism (not shown) during plasma irradiation.

  The plasma irradiation apparatus 20 irradiates plasma (secondary plasma 47 described later) to a portion of the wire 2 that is disposed above the holding unit 21 and is exposed through the opening 22a of the mask 22 in the wire 2 passing through the holding unit 21.

  With reference to FIG.2 and FIG.3, the plasma irradiation apparatus 20 of the atmospheric pressure plasma irradiation part 15A is demonstrated.

  The plasma irradiation apparatus 20 includes a cylindrical discharge tube (inductively coupled plasma generator) 33 made of a dielectric material that is accommodated in a fixed plasma head 31 and forms a reaction space 32 having a circular cross section. Outside the discharge tube 33, a flat-plate antenna 34 having a wavy shape is provided. A high frequency power source 36 is connected to the antenna 34 via a matching circuit 35. A first gas source 17 </ b> A that supplies Ar gas, which is an inert gas, to the discharge tube 33 is connected to the upper end side of the discharge tube 33.

A mixer (plasma developing section) 41 is attached to the lower end side of the plasma head 31. The mixer 41 includes a mixing chamber 42 having an opening (plasma jet outlet 42a) formed at the lower end. The plasma jet nozzles 42a are positioned above the object 2 of the wire 2 that passes through the holding portion 21 with a space therebetween. This interval is set to 0.5 mm or more and 5 mm or less, for example. The lower end of the discharge tube 33 enters the mixing chamber 42 of the mixer 41. Further, one or a plurality of gas supply ports 43 are provided in the peripheral wall portion of the mixing chamber 42. These gas supply ports 43 are connected to the second gas source 37B. The second gas source 37B supplies a mixed gas (Ar / O ₂ gas) of Ar gas as an inert gas and O ₂ gas as a reactive gas.

  A high frequency voltage is applied to the antenna 34 from the high frequency power supply 36 via the matching circuit 35, and thereby a high frequency electric field is applied to the discharge tube 33. The first gas source 37A supplies Ar gas from the upper end of the discharge tube 33 to the reaction space 32 via the flow rate control device 38A. By igniting by applying a high voltage with an ignition device (not shown), Ar gas is converted into plasma from the lower end of the discharge tube 33, and the plasma density is high and high temperature inductively coupled plasma (heat Primary plasma 46, which is plasma, is blown out into the mixing chamber 42 of the mixer 41.

Ar / O ₂ gas is supplied from the second gas source 37B to the mixing chamber 42 via the gas supply port 43 via the flow rate control device 38B. The primary plasma 46 (Ar plasma) from the discharge tube 33 is introduced into the Ar / O ₂ gas region in the mixing chamber 42, and in particular, the Ar gas in the mixed gas is excited to generate a secondary plasma 47 (Ar plasma) of the mixed gas. Is generated. The secondary plasma 47 develops in the entire region of the mixing chamber 42 and blows downward from the plasma outlet 42a to irradiate the wire 2.

  As described above, since the atmospheric pressure plasma irradiation unit 15B has the atmospheric pressure plasma 15A in an upside down posture, the plasma irradiation device 20 is disposed below the holding unit 21 and is included in the mask 22 of the wire 2 passing through the holding unit 21. Plasma (secondary plasma 47, which will be described later) is irradiated to a portion exposed through the opening 22a.

The second gas source 37B included in the plasma irradiation apparatus 20 of the atmospheric pressure plasma irradiation units 16A and 16B is a mixed gas (Ar / H ₂ gas) of Ar gas as an inert gas and H ₂ gas as a reactive gas. Supply. Accordingly, the primary plasma 46 (Ar plasma) from the discharge tube 33 is introduced into the Ar / H ₂ gas region in the mixing chamber 42, and in particular, the Ar gas in the mixed gas is excited to excite the Ar gas in the mixed gas and the secondary plasma 47 (Ar Plasma). The secondary plasma 47 develops in the entire region of the mixing chamber 42, blows out from the plasma outlet 42a, and is applied to the wire 2.

  The control device 25 conceptually shown in FIGS. 1 and 2 controls the operation of the entire coating removal apparatus 1 including the atmospheric pressure plasma irradiation unit 15 (particularly, the plasma irradiation device 20).

  Next, operation | movement of the coating removal apparatus 1 of this embodiment is demonstrated.

  The wire 2 is intermittently sent from the supply unit 11 toward the collection unit 12. A stable tension is applied to the wire 2 by the tension applying sections 13A and 13B, and the temperature of the wire 2 is suppressed by being cooled by the cooling section 14.

  The wire 2 that has reached the atmospheric pressure plasma irradiation unit 15A is irradiated with the secondary plasma 47 from above by the plasma irradiation device 20. Specifically, the secondary plasma 47 is selectively irradiated to the upper side of the exposed portion of the wire 2 through the opening 22a of the mask 22. The secondary plasma 47 (Ar plasma) activates oxygen constituting the reactive gas. The activated oxygen undergoes a chemical reaction on the upper side of the coating 4 of the wire 2 held by the holding unit 21 and decomposes and removes the upper portion of the coating 4.

  Subsequently, the secondary plasma 47 is irradiated from below by the plasma irradiation device 20 onto the wire 2 that has reached the atmospheric pressure plasma irradiation unit 15B. The oxygen activated by the secondary plasma 47 undergoes a chemical reaction under the coating 4 of the wire 2 held by the holding unit 21 and decomposes and removes the lower side of this portion of the coating 4.

  As described above, the coating 4 is selectively removed by the atmospheric pressure plasma irradiation in the atmospheric pressure plasma irradiation units 15A and 15B, and the core materials 3 and 3 are exposed in the portion where the coating 4 is removed.

  Next, the secondary plasma 47 is irradiated from above by the plasma irradiation device 20 on the wire 2 that has reached the atmospheric pressure plasma irradiation unit 16A. Specifically, the secondary plasma 47 is selectively irradiated to the upper side of the exposed portion of the wire 2 through the opening 22a of the mask 22. The secondary plasma 47 (Ar plasma) activates hydrogen constituting the reactive gas. The activated hydrogen undergoes a chemical reaction at the upper portion of the surfaces of the core materials 3 and 3 oxidized at the time of removing the coating in the atmospheric pressure plasma irradiation unit 15A, and the oxide film in this portion is reduced and removed.

  Subsequently, the secondary plasma 47 is irradiated from below by the plasma irradiation device 20 onto the wire 2 that has reached the atmospheric pressure plasma irradiation unit 16B. Hydrogen activated by the secondary plasma 47 undergoes a chemical reaction in the lower part of the surfaces of the core materials 3 and 3 oxidized during the coating removal in the atmospheric pressure plasma irradiation part 15B, and the oxide film in this part is reduced and removed. To do.

  As described above, the surfaces of the core materials 3 and 3 are reduced and the oxide film is removed by the atmospheric pressure plasma irradiation in the atmospheric pressure plasma irradiation units 16A and 16B.

For example, the plasma irradiation apparatus 20 of the atmospheric pressure plasma irradiation units 15A and 15B operates under the following conditions. First, the power of the high frequency power supply 36 is set to about 20 W or more and 50 W or less. The Ar flow rate of the first gas source 37A is set to about 50 sccm or more and 100 sccm or less. The Ar / O ₂ flow rate of the second gas source 37B is set to about 100 sccm or more and 400 sccm or less. Further, the O ₂ concentration in the second gas source 37B is set in a range of about 1% to 2%. Further, the plasma irradiation time is set in a range of about 5 seconds to 15 seconds.

The plasma irradiation apparatus 20 of the atmospheric pressure plasma irradiation units 16A and 16B operates, for example, under the following conditions. First, the power of the high frequency power supply 36 is set to about 20 W or more and 50 W or less. The Ar flow rate of the first gas source 37A is set to about 50 sccm or more and 100 sccm or less. The Ar / H ₂ flow rate of the second gas source 37B is set to about 100 sccm or more and 400 sccm or less. Further, the H ₂ concentration in the second gas source 37B is set in a range of about 1% to 2%. Further, the plasma irradiation time is set in a range of about 5 seconds to 15 seconds.

In the atmospheric pressure plasma irradiation sections 15A and 15B, the coating 4 is decomposed at a higher speed with a plasma of a mixed gas (Ar / O ₂ ) containing O ₂ as a reactive gas, and then the reactivity is detected in the atmospheric pressure plasma irradiation sections 16A and 16B. The surface of the core materials 3 and 3 is reduced with a plasma of a mixed gas (Ar / H ₂ ) containing H ₂ as a gas to remove the oxide film, thereby suppressing the oxidation of the core material 3 and coating 4 at high speed. Can be removed.

  Moreover, since the plasma is irradiated in the atmospheric pressure plasma irradiation units 15A to 16B only on the portion of the wire 2 exposed from the opening 22a of the mask 22, the coating 4 at a desired position of the wire 2 can be selectively removed. .

  As described above, heat transfer to the wire 2 upstream of the atmospheric pressure plasma irradiation units 15A and 15B is reduced by the cooling unit 14A upstream of the atmospheric pressure plasma irradiation units 15A and 15B in the feed direction of the wire 2. Thus, in the wire 2 upstream of the atmospheric pressure plasma irradiation portions 15A and 15B, the expansion of the unstable portion due to carbonization of the coating 4 and melting or softening of the coating 4 can be suppressed. Further, as described above, heat transfer to the wire 2 downstream of the atmospheric pressure plasma irradiation units 16A and 16B is suppressed by the cooling unit 14B downstream of the atmospheric pressure plasma irradiation units 16A and 16B in the feed direction of the wire 2. By doing so, in the wire 2 on the downstream side of the atmospheric pressure plasma irradiation parts 16A and 16B, it is possible to suppress expansion of an unstable portion due to carbonization of the coating 4 and melting or softening of the coating 4. Further, as described above, the portion of the wire 2 where the oxide film has been reduced and removed by plasma irradiation in the atmospheric pressure plasma irradiation units 16A and 16B is cooled by the cooling unit 14B and the temperature is lowered, thereby preventing reoxidation. it can.

  As described above, the coating removal apparatus 1 of the present embodiment can selectively and rapidly remove the coating 4 while suppressing the oxidation of the core materials 3 and 3.

The present invention is not limited to the above embodiment, and various modifications can be made. For example, a single atmospheric pressure plasma irradiation unit for irradiating plasma of mixed gas (Ar / O ₂ ) containing O ₂ as a reactive gas is provided, and the vertical position of this atmospheric pressure plasma irradiation unit is set upward and downward Switching may be possible. Similarly, a single atmospheric pressure plasma irradiation unit is provided to irradiate plasma of a mixed gas (Ar / H ₂ ) containing H ₂ as a reactive gas, and the vertical position of this atmospheric pressure plasma irradiation unit is upward and downward It may be possible to switch to.

1 Coating removal equipment (plasma processing equipment)
2 Wire material 3 Core material 4 Coating 11 Supply unit 11a Drum 11b Drive mechanism 12 Collection unit 12a Drum 12b Drive mechanism 13A, 13B Tension applying unit 13a Support shaft 13b Fixed roller 13c Guide rail 13d Support shaft 13e Movable roller 14 Cooling unit
14a Pedestal 14b Cooling member 14c Through-hole 15A, 15B, 16A, 16B Atmospheric pressure plasma irradiation part 20 Plasma irradiation apparatus 21 Holding part 21a Bottom wall 21b Side wall 21c Notch 22 Mask 22a Opening 23 Ground electrode 24 Recovery mechanism 25 Control apparatus 31 Plasma head 32 Reaction space 33 Discharge tube 34 Antenna (inductively coupled plasma generator)
35 Matching Circuit 36 High Frequency Power Supply 37A First Gas Source 37B Second Gas Source 38A, 38B Flow Control Device 41 Mixer (Plasma Development Unit)
42 Mixing chamber 42a Plasma injection port 43 Gas supply port 46 Primary plasma 47 Secondary plasma

Claims (4)

A holding unit for holding an object to be processed having a coating made of an organic material, an inductively coupled plasma generating unit for blowing a primary plasma composed of an inductively coupled plasma of a first inert gas, a second inert gas and O A plasma expanding section for generating a first secondary plasma composed of a mixed gas that has been made into plasma by collision of a mixed gas region of _two gases with the primary plasma, and the first secondary plasma is A first atmospheric pressure plasma irradiation unit for irradiating a workpiece;
A holding unit for holding the object to be processed, an inductively coupled plasma generating unit for blowing out primary plasma composed of inductively coupled plasma of the first inert gas, and a mixture of the _second inert gas and H ₂ gas A plasma developing section for generating a second secondary plasma composed of a mixed gas that has been made into a plasma by collision of the gas region with the primary plasma, and the second secondary plasma is applied to the object to be processed. A plasma processing apparatus comprising: a second atmospheric pressure plasma irradiation unit for irradiation. For each of the first and second atmospheric pressure plasma irradiation units,
A mask that is disposed between the atmospheric pressure plasma irradiation unit and restricts an irradiation region of the secondary plasma to the object to be processed;
The plasma processing apparatus according to claim 1, further comprising: a ground electrode disposed on a side opposite to the atmospheric pressure plasma irradiation unit and the mask with respect to the object to be processed. The object to be treated is a wire,
The plasma processing apparatus according to claim 1, further comprising a tension applying unit that applies tension to the wire held by the holding unit. A primary plasma composed of inductively coupled plasma of the first inert gas is generated, and the generated primary plasma collides with a mixed gas of the _second inert gas and O ₂ gas to form a plasma mixed gas. 1 secondary plasma is generated,
Irradiating an object to be processed having a coating made of an organic material with the first secondary plasma,
A primary plasma composed of inductively coupled plasma of the first inert gas is generated, and the generated primary plasma is made to collide with the mixed gas of the _second inert gas and H ₂ gas to generate plasma. Generating a second secondary plasma comprising:
A plasma processing method of irradiating a region of the workpiece to which the first secondary plasma is irradiated with the second secondary plasma.

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