JPH07245192A - Method and device for surface processing, method and device for manufacture of semiconductor device, and manufacture of liquid crystal display - Google Patents

Abstract

PURPOSE:To eliminate necessity for providing any decompressed environment, construct the device small and movable, allow the device to operate with a high processing ability and at low cost, give less damage to the material to be processed, and subject the material to a surface processing locally as applicable. CONSTITUTION:A gas according to the purpose is introduced in a gas passage 2 formed from a dielectric material. A high frequency voltage is impressed, and within the gas passage the gas is allowed to conduct a gas discharge under the atmospheric pressure or with a certain pressure around it. The active seed of gas produced by this discharging is turned into a gas flow, to which a material to be processed 11 is exposed so that its surface undergoes the intended processing.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment technique for etching or ashing the surface of a material to be treated so as to remove inorganic substances and organic substances, or to modify it to improve wettability. It is used as a pretreatment or a posttreatment for the mounting process, or for resin-sealing an electronic component, or for forming a film on a semiconductor surface.

[0002]

2. Description of the Related Art Conventionally, with the development of semiconductor technology, various techniques have been known for this type of surface treatment. For example, as a method of removing organic substances such as flux used for soldering when mounting electronic components, a wet cleaning method using an organic solvent, irradiation with ozone, ultraviolet rays, etc. is performed to cause a chemical reaction in the organic substances. There is a dry cleaning method to remove. However, in the wet method, a rinse step of removing the cleaning agent after the cleaning of the organic substance and a step of drying the substrate,
In addition, there is a problem that fixed equipment is required to execute these, which requires a lot of time and labor and increases the manufacturing cost. Further, in the cleaning by the wet method, the cleaning agent may affect the electronic parts. Further, in the dry method, a sufficient cleaning effect cannot be expected because the ability to remove organic substances having a particularly large molecular weight is low.

For this reason, recently, a method has been developed in which plasma is generated in a vacuum and organic and inorganic substances are removed using the plasma. For example, JP-A-58-14714
Japanese Patent Laid-Open No. 3 (1993) discloses that when the IC chip is packaged in a plastic, the surface of the lead frame is treated with oxygen gas activated by microwave discharge under reduced pressure to improve the adhesion between the lead frame and the resin. , A method of improving reliability is disclosed. In addition, JP-A-4
In the surface mounting method of an electronic component described in Japanese Patent No. 116837, the oxide is removed by introducing a hydrogen gas of 1 to 10 Torr into a plasma etching apparatus and discharging the hydrogen gas. Further, in Japanese Patent Laid-Open No. 5-160170,
A method of etching a lead frame by applying a high frequency voltage to an electrode in a depressurized processing chamber to generate argon oxygen plasma or hydrogen reduction plasma is disclosed.

It is also known that plasma CVD, ashing, etching, and surface treatment are possible by generating plasma by using a rare gas and a slight reaction gas under atmospheric pressure. In many cases, these generate an electric discharge between a high frequency electrode and a processed material. On the other hand, as a device for discharging between the power supply electrode and the ground electrode, in JP-A-3-133125, a gas containing fluoride is discharged at atmospheric pressure, and is sprayed on a substrate or exposed in an ozone atmosphere. The method of ashing is disclosed in JP-A-4-145139, and the surface of the fluorine-based member is subjected to plasma discharge treatment at atmospheric pressure in a helium gas atmosphere to make the surface hydrophilic and suitable for adhesion. A method of modifying the surface is disclosed.

[0005]

However, in the above-mentioned conventional surface treatment technique using plasma discharge,
JP-A-58-147143 and JP-A-4-116837
When discharging under a depressurized environment such as
Special equipment such as vacuum chambers and vacuum pumps is required, which makes the entire device large and complicated, and it is expensive and costly, and it is difficult to perform on-site work and local treatment. was there. In addition, it is necessary to reduce and maintain the inside of the chamber to a predetermined pressure during discharge, and it takes a long time to perform the process, such as being able to perform the process only about twice per hour. However, there is a problem that batch processing is possible, but single-wafer processing is difficult, and thus it cannot be inlined. Furthermore,
In plasma discharge in vacuum or under reduced pressure, the number of electrons and ions is larger than that of excited species, so that the damage to electronic components becomes large especially when used for surface treatment of a semiconductor device.

On the other hand, the method of plasma discharge under atmospheric pressure is advantageous in that no vacuum equipment is required,
A device that causes an electric discharge between the electrode and the material to be processed is likely to have a non-uniform discharge state and may damage the material to be processed. Therefore, the distance between the electrode and the material to be processed and the material to be processed are The material of the material is limited. In particular, when the shape of the material to be treated is complicated or the unevenness is large, the shape of the electrode correspondingly becomes complicated, the discharge locally occurs, the recessed portion cannot be sufficiently treated, etc. There was a problem.

Even in the case of discharging between electrodes, the method disclosed in
The method of No. 133125 is for removing the resist from the substrate after patterning, and since the material to be processed is arranged in the quartz cell to be exposed to the excitation gas, the processing work is troublesome, and in-line or on-site processing is required. Processing is difficult. In addition, it is not suitable for local ashing or etching, and in particular, it may be surface-treated when resin-encapsulating electronic components or when a defective chip is removed from a semiconductor device and a non-defective product is re-mounted. Can not. Further, in the atmospheric pressure plasma discharge disclosed in Japanese Patent Laid-Open No. 4-145139, the material to be processed is housed in the processing chamber with the electrodes facing each other, and expensive helium gas is constantly supplied for processing. Becomes larger. For this reason, it is difficult to use in-line, and it is not suitable for local electric discharge treatment or on-site work. In addition, since the electrodes are arranged in the processing chamber where the discharge is generated, the electrodes are easily damaged by the discharge and the durability is likely to be a problem.

Therefore, the surface treatment method of the present invention has been made in view of the above-mentioned conventional problems, and its object is to simplify the apparatus without requiring equipment for vacuuming or depressurizing. Ashing, etching, and drying under atmospheric pressure or a pressure in the vicinity thereof and safely without causing thermal or electrical damage to the material to be processed regardless of its shape or material. A surface treatment method that can perform cleaning and surface treatment for improving wettability, and that can also locally treat the material to be treated, can be used in-line and used in the field, and has a low cost and high treatment capacity. To provide. Further, the object of the present invention is to
It is an object of the present invention to provide a surface treatment device for realizing the above-mentioned surface treatment method.

Another object of the present invention is to enhance the bondability between the electronic component and the lead in the manufacture of a packaged semiconductor device by connecting the electronic component and the lead and encapsulating them with resin. In addition, it is possible to improve the wettability between these and the resin to improve the adhesiveness, improve the yield, and manufacture a highly reliable packaged semiconductor device. A method that can be realized at a low cost with a relatively simple structure, can be downsized, has little damage to electronic parts, has a high processing capacity, and can be subjected to single-wafer processing and in-line processing. To provide a device.

Particularly, in ILB (Inner Lead Bonding) for connecting an IC chip to a tape carrier, it is relatively troublesome to remove the dirt adhering to the inner lead surface and the chip bonding surface by the conventional wet cleaning method. The process of cleaning these before joining them is not generally performed. In addition, a polyimide resin coating may remain on the tape carrier. For this reason, the inner lead and the IC chip cannot be joined well, and the adhesion with the mold resin is poor at the time of resin sealing in a later step, which is one of the causes for lowering the yield. Then, still another object of the present invention is to perform the surface treatment of the tape carrier and the IC chip in the ILB easily and at low cost, thereby improving the bondability between the inner lead and the IC chip and molding the ILB. An object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor device, which can improve the adhesiveness with a resin to improve the yield and can easily perform such surface treatment in-line.

Further, in the manufacture of a semiconductor device, when a plurality of electronic components are mounted and then a defective electronic component is removed and a non-defective electronic component is remounted, it is difficult to partially mount the surface, so that the mounting is not performed. All the electronic components used are removed and remounted, which requires a great deal of labor and cost. Therefore, in the method for manufacturing a semiconductor device of the present invention, the surface treatment is applied only to the portion to be rejoined, and the adhesive / wax that remains locally without affecting the electronic parts mounted on other portions. It reliably and easily removes stains on materials, etc., and at the same time improves wettability and allows good electronic components to be connected satisfactorily, and the processing speed is fast and suitable for on-site processing, greatly reducing labor and cost. The aim is to provide a method that can be reduced to.

Further, in the manufacture of a liquid crystal display, in order to eliminate dust that causes a display defect, which is the biggest problem, a cleaning process is performed several times during the manufacturing process. Wet cleaning with detergent and UV-
Dry cleaning such as ozone cleaning is performed. Further, from the viewpoint of environmental protection when using an organic solvent, dry cleaning by oxygen plasma discharge in vacuum is also adopted. However, as described above, processing in a vacuum environment is difficult to perform single-wafer processing because of structural and cost problems of the apparatus, and batch processing of several hundreds is usually performed except for large panels. Moreover, the entire panel is always processed. Moreover, since the number of sheets processed at one time is determined in consideration of the post-process including the problem of the pot life, it is difficult to control production, and it is difficult to reduce the cost by simply increasing the number of sheets processed. Therefore, still another object of the present invention is to perform the cleaning process relatively easily and at a low cost, to downsize the apparatus, to have a high processing speed, and to enable the single-wafer processing. It is an object of the present invention to provide a method capable of realizing high efficiency, giving flexibility to production management, and capable of performing on-site processing.

When the polarizing plate is attached to the liquid crystal cell, it is necessary to carry out a pretreatment to remove the flux scattered from the surface of the liquid crystal cell during the patterning of the substrate, the residue of the scribes, the stains due to fingerprints and the like. Conventionally, these treatments were performed using a chlorine-based solvent, but the solvent after cleaning has a large effect on the environment, and therefore a method of mechanically scraping off the dirt manually with a cutter or a cleaning tape is generally used. However, the liquid crystal panel may be physically damaged. There is also a method in which the liquid crystal panel is covered with a protective film in advance, and the protective film is peeled off and a polarizing plate is attached, but this increases the cost. Therefore, another object of the present invention is to
In the pretreatment to attach the polarizing plate to the liquid crystal panel,
It is an object of the present invention to provide a method that is relatively simple and low-cost, has high processing capability, and does not cause physical damage to a liquid crystal panel.

[0014]

The present invention is to achieve the above-mentioned object, and the contents thereof will be described below with reference to the embodiments shown in the drawings.

In the surface treatment method according to the first aspect, a predetermined gas is introduced into a gas flow path formed of a dielectric material, and the predetermined gas is introduced into the gas flow path under atmospheric pressure or a pressure in the vicinity thereof. Is characterized in that a gas discharge is generated in the material, and the surface of the material is treated by exposing the material to be treated to the active species of the gas generated by the discharge.

In addition to the features of claim 1 described above, the surface treatment method according to claim 2 discharges gas by applying a high frequency voltage to an electrode provided outside the gas flow path made of a dielectric material. In contrast to this, the method according to claim 3 is characterized in that a gas discharge is generated by a non-polar discharge by microwaves.

The surface treatment method according to claim 4 is characterized in that the surface of the material to be treated is exposed not by direct exposure to a gas discharge but by applying a gas stream containing active species. Therefore, the method according to claim 5 is characterized in that the material to be treated is arranged in the vicinity of the outlet of the gas flow path, and the method according to claim 6 is through a pipe connected to the outlet of the gas flow path. The gas flow is applied to the surface of the material to be treated.

In addition to these, the surface treatment method according to claim 7 is characterized in that a gas flow is applied to the surface of the material to be treated through a metal mesh, and the method according to claim 8 further comprises:
The metal mesh is used as a ground electrode to generate a gas discharge.

The surface treatment method according to claim 9 is characterized in that the surface of the material to be treated is selected and partially exposed to the gas active species.

The surface treatment method according to claim 10 is characterized in that the predetermined gas contains a rare gas at least at the start of gas discharge.

The surface treatment method according to claim 11 is characterized in that the predetermined gas is either helium, nitrogen or compressed air, whereas the method according to claim 12 is:
The predetermined gas comprises helium or nitrogen and oxygen, and the method according to claim 13 is characterized in that the predetermined gas comprises helium or compressed air and a fluorine compound.

The surface treatment method according to claim 14 is
The predetermined gas is composed of a rare gas of 100%, and the reaction gas existing in the vicinity of the material to be processed is activated by gas discharge, and the surface of the material to be processed is exposed to the activated species.

In addition to this, the surface treatment method according to the fifteenth aspect is characterized in that the reaction gas is contained in an atmosphere near the material to be treated, and the surface treatment method according to the sixteenth aspect is the reaction gas. Is forcibly introduced near the material to be treated.

The surface treatment method according to claim 17 is characterized in that the material to be treated is exposed to a gas containing an active species in the presence of water, and the surface treatment method according to claim 18 is the material to be treated in water. Is exposed to a stream of gas.

The surface treatment method according to claim 19 is characterized in that the material to be treated is cooled or heated.

According to a twentieth aspect of the present invention, there is provided a surface treatment method of cooling an electrode to which a high frequency voltage is applied and / or a portion of a gas channel exposed to a discharge.

The surface treatment method according to a twenty-first aspect is characterized in that different parts of the surface are continuously treated while moving the material to be treated.

According to another aspect of the present invention, there is provided a surface treatment apparatus according to claim 22, wherein a gas channel formed of a dielectric material, a means for introducing gas into the gas channel, and a gas are provided. It is characterized in that it comprises means for generating a gas discharge in the gas under atmospheric pressure or a pressure in the vicinity thereof in the flow path, and means for exposing the material to be treated to the gas containing the active species generated by the discharge.

In the surface treatment apparatus according to a twenty-third aspect, in addition to the characteristic features of the twenty-second aspect, the gas discharge generating means includes an electrode provided outside the gas flow path, and means for applying a high frequency voltage to the electrode. In addition to this, the apparatus according to claim 24 is characterized in that the electrode is provided so as to be relatively movable outside the gas flow path.

The surface treatment apparatus according to claim 25 is
In addition to the features of claim 22 described above, it is characterized in that a non-polar discharge by microwaves is generated by the gas discharge generating means.

The surface treatment apparatus according to a twenty-sixth aspect is characterized in that the gas discharge generating means has a grounded counter electrode and causes gas discharge between the electrode and the electrode provided outside the gas flow path.

The surface treatment apparatus according to claim 27 is characterized in that the means for exposing the material to be treated to a gas containing active species comprises an outlet of a gas flow passage for ejecting the gas as a gas flow. The apparatus described in No. 28 is characterized in that it further has a conduit for guiding the gas flow from the outlet of the gas flow path to the vicinity of the material to be processed.

The surface treatment apparatus according to claim 29 is:
31. The means for exposing the material to be treated to a gas containing active species has a metal mesh disposed between the outlet of the gas flow path and the material to be treated, and in addition to this, the method according to claim 30. The device is characterized in that the metal mesh is grounded and a gas is discharged between the metal mesh and the electrode.

According to a thirty-first aspect of the present invention, there is provided a surface treatment apparatus further comprising mask means for selectively exposing the surface of the material to be treated to a gas containing active species.

According to a thirty-second aspect of the present invention, the surface treatment apparatus further comprises means for introducing a reaction gas into the vicinity of the material to be treated, and the gas introduced by the gas introduction means is a rare gas 100. %, And is characterized in that the reactive gas is activated by the gas discharge of the rare gas.

The surface treatment apparatus according to claim 33 is:
The surface treatment apparatus according to claim 34 further comprises means for supplying moisture to the surface of the material to be treated.

A surface treatment apparatus according to a thirty-fifth aspect is characterized in that the material to be treated is placed in water and exposed to a gas containing active species in water.

A surface treatment apparatus according to a thirty-sixth aspect is characterized in that it has means for cooling or heating the material to be treated,
A surface treatment apparatus according to a thirty-seventh aspect is characterized in that it has means for cooling an electrode to which a high frequency voltage is applied and / or a portion of a gas flow path exposed to a discharge.

The surface treatment apparatus according to a thirty-eighth aspect is characterized in that the means for exposing the gas containing the active species and the material to be treated are relatively movable.

According to a thirty-ninth aspect of the present invention, in the surface treatment apparatus, when the frequency of the voltage applied to the electrode is 13.56 MHz or less, the electrode is connected via an impedance etching circuit connected to a high frequency power source and a coaxial cable. It is characterized by being connected.

Further, according to the present invention, by utilizing the above-mentioned surface treatment technique, the method of manufacturing a semiconductor device according to claim 40 is a package type in which an electronic component and a lead are joined and sealed with a resin. When manufacturing the semiconductor device of
A predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path, which is generated by this discharge. A surface treatment step of exposing the bonded electronic component and / or the lead to an active species of gas,
It is characterized in that it is performed before resin-sealing the joined electronic components and leads.

In addition to the above, the method for manufacturing a semiconductor device according to a forty-first aspect is characterized in that, in the case where the electronic component and the inner lead of the tape carrier are connected, a surface treatment step is performed after the connection and before the resin sealing. It is characterized by performing.

Further, in the method for manufacturing a semiconductor device according to a forty-second aspect of the invention, when the electronic component and the lead are similarly joined and encapsulated with a resin to manufacture a package type semiconductor device, the electronic component and the lead are separated from each other. Before joining, a predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path. A surface treatment step of exposing at least one of the electronic component and the lead to be bonded to the active species of the gas generated by the discharge is performed.

In addition to the above, the method for manufacturing a semiconductor device according to claim 43 is characterized in that, in the case of connecting the electronic component and the inner lead of the tape carrier, a surface treatment step is performed before connecting them. To do.

According to a 44th aspect of the present invention, in a semiconductor device manufacturing apparatus, the bonded electronic parts and leads are surface-treated in order to encapsulate the bonded electronic parts and leads with a resin to manufacture a package type semiconductor device. And a resin encapsulation unit for encapsulating the electronic components and leads surface-treated by the surface treatment unit with a resin,
The surface treatment section has a gas flow path formed of a dielectric material, a means for introducing a gas into the gas flow path, and a gas discharge is generated in the gas flow path under atmospheric pressure or a pressure in the vicinity thereof. And a means for exposing at least one of the joined electronic component and lead to the gas containing the active species generated by the discharge.

According to a forty-fifth aspect of the present invention, in a semiconductor device manufacturing apparatus, a surface treatment section for surface-treating at least one of an electronic component and a lead to be joined before the joining, and the electronic component and the lead are joined together. The surface treatment section is composed of a bonding section for forming a gas flow path formed of a dielectric material, a means for introducing a gas into the gas flow path, and the atmospheric pressure or the inside of the gas flow path. It is characterized by comprising means for generating a gas discharge in the gas under a pressure in the vicinity and means for exposing at least one of the electronic component and the lead to the gas containing the active species generated by the discharge.

In the semiconductor device manufacturing apparatus according to the forty-sixth aspect, in addition to this, when the electronic component and the inner lead of the tape carrier are connected, the surface treatment section causes the inner lead of the tape carrier fed from the reel. Is characterized in that the surface treatment is performed before the bonding portion.

According to a forty-seventh aspect of the present invention, in the method of manufacturing a liquid crystal display, a polarizing plate is attached to a liquid crystal cell, and then a circuit for driving and a power source is connected to assemble a module to form a module. A predetermined gas is introduced into the gas flow path, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path. And a surface treatment step of exposing

On the other hand, in the method of manufacturing a liquid crystal display according to claim 48, similarly, in the manufacturing process of assembling a module by attaching a polarizing plate to a liquid crystal cell, connecting driving and power circuits. Before attaching the polarizing plate to the cell, a predetermined gas is introduced into the gas channel formed of the dielectric material, and the predetermined gas is introduced into the gas channel under atmospheric pressure or a pressure in the vicinity thereof. It is characterized by performing a surface treatment step of causing a gas discharge and exposing the liquid crystal cell to a gas active species generated by this discharge.

A method for manufacturing a semiconductor device according to a forty-ninth aspect is a method for removing a defective electronic component, replacing it with a good electronic component, and re-mounting it in the production of a semiconductor device having a plurality of electronic components mounted thereon. , After removing the defective item,
A predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path, which is generated by this discharge. A surface treatment step of exposing at least one of a non-defective electronic component and a connection portion of a semiconductor device from which a defective product has been removed to a gas activated species is performed, and then a non-defective electronic component is connected.

[0051]

Therefore, according to the surface treatment method of the first aspect, since the plasma state is generated by introducing the gas under a pressure near the atmospheric pressure and causing the discharge in the gas flow path, it is possible to use the surface treatment method like a vacuum device. It does not require large equipment, it is relatively easy to handle and process the introduced gas and the material to be treated, and the equipment can be downsized so that it can be moved. Depending on the type of introduced gas used, the material to be treated can be The surface can be cleaned, etched, ashed, or modified to improve surface wettability. Moreover, since the discharge is not directly performed with the material to be processed, there is little thermal influence on the material to be processed, and since the material to be processed is irradiated with a gas containing active species, electrons and electrons generated by the discharge Ions collide with molecules in the atmosphere and lose their energy, resulting in less damage to the material to be processed, and the processing speed can be increased.

According to the surface treatment method of the second aspect, the electrode can be prevented from being damaged by the discharge by being provided outside the gas flow path, and the discharge can be made more uniform by using the high frequency power source. In addition, the damage to the material to be processed can be further reduced. Further, according to the surface treatment method of the third aspect, a plasma state can be easily generated in the introduced gas under atmospheric pressure by the microwave discharge.

According to the surface treatment method of the fourth aspect, it is possible to further reduce the damage to the material to be treated, and even when the material to be treated has a complicated shape or large unevenness,
By applying the gas flow containing the active species, it is possible to effectively and surely perform the necessary surface treatment on every part of the material to be treated. Here, according to the method of claim 5, since the introduced gas containing the gas active species flows out from the outlet of the gas flow path, it is possible to easily expose the surface of the processing target material placed under atmospheric pressure. It is possible to form a plurality of gas outlets or to provide a plurality of gas outlets according to the shape and size of the material to be processed or the shape, position, area, etc. of the portion to be processed. Further, according to the method of claim 6, by providing the conduit from the outlet of the gas flow path, the material to be processed can be surface-treated at a position separated from the gas flow path, and workability is improved. You can

According to the surface treatment method of the seventh aspect, even if the electric charge generated by the gas discharge is included in the gas flow,
Since this can be trapped by the metal mesh, it is possible to more reliably eliminate damage to the material to be processed. Further, according to the surface treatment method of claim 8, by discharging the metal mesh as a ground electrode,
A plasma state is generated at a position closer to the material to be treated, and the surface treatment can be performed more effectively.

According to the surface treatment method of the ninth aspect, the material to be treated can be surface-treated locally as needed without affecting or damaging other parts.

According to the surface treatment method of claim 10,
Due to the presence of the rare gas, a gas discharge under atmospheric pressure can be generated more easily.

According to the surface treatment method of claim 11,
By appropriately selecting the introduced gas according to the purpose and cost performance of the surface treatment and using helium as a base, wetting, etching, and ashing are performed at a high processing speed, and nitrogen is used or compressed air is used. In such a case, the wettability can be improved and the ashing can be performed at a relatively low cost.

According to the surface treatment method of claim 12,
By appropriately adjusting the oxygen concentration, the material to be treated can be ashed or the wettability can be improved relatively inexpensively and effectively. According to the surface treatment method of claim 13, the presence of a fluorine compound The material to be processed can be etched relatively inexpensively and effectively.

According to the surface treatment method of claim 14,
The presence of the rare gas facilitates the generation of gas discharge under atmospheric pressure, and the energy exchange with the radical species generated thereby generates active species of the reaction gas in the vicinity of the material to be treated, and the reaction gas under atmospheric pressure. Therefore, even if it is difficult to discharge, a desired surface treatment can be performed. here,
According to the surface treatment method of claim 15, since the atmosphere near the material to be treated is used as the reaction gas, it can be used for the surface treatment inexpensively and easily. According to the method of claim 16, By supplying the reaction gas corresponding to the purpose only to the vicinity of the material to be treated, the surface treatment can be effectively performed.

According to the surface treatment method of claim 17,
By treating the surface of the material to be treated with the addition of water, the treatment speed can be increased. Particularly, according to the surface treatment method of claim 18, wet cleaning or etching can be performed, and static electricity can be removed in the vicinity of the material to be treated by using gas as an environment of only O ₃ (ozone). Alternatively, etching can be performed more effectively in an environment of HF only.

According to the surface treatment method of claim 19,
Depending on the properties and materials of the material to be treated, the situation and purpose of surface treatment, the material to be treated can be cooled to protect it from the high heat of discharge, or heated to accelerate the treatment speed. In addition, claim 2
According to the surface treatment method described in No. 0, the gas flow path made of the dielectric material can be protected from high heat due to discharge. Furthermore, according to the surface treatment method of claim 21, the surface treatment can be performed flexibly and efficiently in accordance with the size and shape of the material to be treated and the position and size of the portion to be treated, Further, it is possible to sequentially perform surface treatment while moving a plurality of materials to be treated.

According to the surface treatment apparatus of claim 22,
With a relatively simple structure that does not require a vacuum chamber or a processing chamber for accommodating the material to be processed, the entire device can be downsized and configured to be movable to the site. The surface treatment of the material to be processed placed under atmospheric pressure by the discharge generated under pressure improves the dry cleaning, etching, ashing, or wettability at high speed with less damage to the material to be processed. can do.

According to the surface treatment apparatus of claim 23,
Since the electrodes are disposed outside the gas flow path, they are not damaged by discharge, and by using a high frequency power source, uniform discharge and reduction of damage to the material to be treated can be achieved. According to the apparatus described in Item 24, the position of the discharge region in the gas flow path can be changed, and the conditions for generating discharge can be easily adjusted according to the material to be treated.

According to the surface treatment apparatus of claim 25,
A microwave discharge can easily cause a plasma state in the introduced gas under atmospheric pressure.

According to the surface treatment apparatus of claim 26,
There is no possibility that a direct discharge will occur between the power electrode and the material to be processed, and damage to the material to be processed can be further reduced.

According to the surface treatment apparatus of claim 27,
By forcibly sending the activated species as a gas flow due to discharge, even if the surface of the material to be processed has a complicated shape or large irregularities, it is possible to reliably and effectively surface-treat all parts. Also, the outlet of the gas flow path can be formed according to the shape of the material to be processed and the position and size of the portion to be processed. Further, according to the surface treatment apparatus of the twenty-eighth aspect, it is possible to perform the surface treatment at a position separated from the gas flow path via the pipe line, thereby improving workability.

According to the surface treatment apparatus of claim 29,
By trapping the electrons and ions generated by the discharge by the metal mesh, the metal mesh can be effectively removed from the gas flow containing the active species, and damage to the material to be processed can be eliminated.

According to the surface treatment apparatus of claim 30,
By using the metal mesh as a ground electrode and discharging at a position closer to the material to be processed, the material to be processed can be more effectively irradiated with the active species.

According to the surface treatment apparatus of claim 31,
The mask means allows the surface of the material to be treated to be easily surface-treated without affecting or damaging other parts.

According to the surface treatment apparatus of claim 32,
Due to the presence of a rare gas, a gas discharge is easily generated under atmospheric pressure, and the reactive gas supplied to the vicinity of the material to be treated using this active species can be easily discharged even if it is difficult to discharge under atmospheric pressure. It can be in a plasma state.

According to the surface treatment apparatus of the thirty-third aspect or the thirty-fourth aspect, the surface treatment rate can be increased by adding water when exposing the material to be treated to the gas activated species.

According to the surface treatment apparatus of claim 35,
Wet cleaning or etching is performed, and the vicinity of the material to be processed can be removed static electricity as an environment of only O ₃ (ozone) or can be more effectively etched as an environment of only HF depending on the gas used. .

According to the surface treatment apparatus of claim 36,
The material to be treated can be cooled as necessary to protect it from the high heat of discharge, or heated to increase the treatment speed, and according to the apparatus of claim 37, a gas flow path made of a dielectric material. Can be protected from high heat due to discharge, and the durability of the device can be improved.

According to the surface treatment apparatus of claim 38,
By relatively moving the material to be processed, it is possible to uniformly or partially select and process all parts according to the size and shape of the material to be processed and the purpose of the processing. The material to be treated can be treated while being sequentially moved.

According to the surface treatment apparatus of claim 39,
By connecting the electrodes and the impedance matching circuit via a coaxial cable, the device can be easily moved.

According to the semiconductor device manufacturing method of the present invention, the surface treatment is performed with the gas containing the active species generated by the gas discharge under the pressure near the atmospheric pressure. The surface of electronic parts and / or leads can be modified at low cost, and the organic / inorganic substances adhering to them can be removed, and the wettability with the resin for sealing is improved for good adhesion. be able to. Further, according to the semiconductor device manufacturing method of claim 41, an ILB for connecting an electronic component and a tape carrier.
Also in the case of (inner lead bonding), the resin for encapsulating the same can be closely adhered.

According to the semiconductor device manufacturing method of the present invention, it is possible to remove organic substances and inorganic substances from the joint surfaces of the electronic components and the leads relatively easily and at low cost, and improve the wettability. As a result, these can be satisfactorily joined together, and the adhesiveness with the resin can be enhanced when the resin is sealed in the subsequent step. Further, claim 4
According to the manufacturing method described in 3, it is possible to obtain a good bonding state even in the ILB process of the electronic component and the tape carrier.

According to the semiconductor device manufacturing apparatus described in Item 44, the size of the entire apparatus can be reduced by a relatively simple structure that does not require a vacuum device and the like, and the apparatus can be easily and rapidly operated in the atmosphere. Since the surface treatment can be performed, it is possible to easily achieve in-line with a resin sealing process for electronic components.

According to the semiconductor device manufacturing apparatus of the forty-fifth aspect, the organic material and the inorganic material are removed from the joint surfaces of the electronic component and the lead with a relatively simple structure and at a low cost, and the wettability is improved. As a result, they can be satisfactorily joined, and since they are processed in the atmosphere, they can be easily inlined. And according to the manufacturing apparatus of Claim 46, a favorable joining state can be obtained also in the ILB process of an electronic component and a tape carrier, and adhesiveness with resin at the time of resin sealing in a post process. Can be increased.

According to the forty-seventh aspect of the method of manufacturing a liquid crystal display of the present invention, the substrate can be dry-cleaned at a high speed with a relatively simple structure, and the cost can be reduced and the single wafer processing can be performed.

According to the method of manufacturing a liquid crystal display as described in claim 48, relatively high speed, simple and low cost can be achieved without physically damaging the organic / inorganic contaminants adhering to the liquid crystal cell on the liquid crystal panel surface. Can be removed with
Poor sticking of the polarizing plate can be effectively prevented, and single-wafer processing and on-site processing become possible.

According to the semiconductor device manufacturing method of the 49th aspect, after removing a defective electronic component, only a portion necessary for rejoining a non-defective product is selected and other portions are affected. It can be surface-treated relatively easily and on-site if necessary.

[0083]

FIG. 1 schematically shows the structure of a preferred embodiment of the surface treatment apparatus according to the present invention. A so-called gun type surface treatment apparatus 1 for generating gas discharge has a dielectric tube 2 made of thin quartz and having a substantially cylindrical shape. The dielectric tube 2 has a pair of high-frequency electrodes 3a and 3b arranged on the outer peripheral surface near the center of the dielectric tube 2 so as to face each other with the dielectric tube 2 in between, and constitutes a so-called capacitively coupled discharge structure. . The electrodes 3a, 3b are completely covered with an insulator 4 on the outside, and a thin metal case 5 is attached on the outside so as to surround the entire dielectric tube 1. Dielectric tube 2
A gas inlet 6 is provided at the upper end of the gas supply device 7
Is connected via a flexible tube 8 and a gas ejection port 9 is opened downward at the lower end. Immediately below the gas ejection port 9, a metal mesh 10 integrally connected to the metal case 5 is arranged. Below the gas ejection port 9 and the metal mesh 10, a material 11 to be treated such as a substrate is arranged with its surface treated side facing upward.

One electrode 3a is connected to the impedance matching circuit 14 via the coaxial cable 13 and to the high frequency power supply 15 via the circuit. One end of the mesh metal wire on the outer peripheral portion of the coaxial cable 13 is grounded through the connector of the impedance matching circuit 14, and the other end is connected to the other electrode 3b or the metal case 5. The electrode 3b is electrically connected to the metal case 5 by, for example, a screw 16 screwed from the outside thereof, whereby the metal case 5, the electrode 3b and the metal mesh 10 are grounded. This is to prevent electric shock due to the potential generated on the surface of the insulator 4 and to reduce the influence of the high frequency electric field on the human body due to the high frequency leakage. still,
The core wire of the coaxial cable 13 is connected to one of the high frequency electrodes 3 a which is not electrically connected to the case 5, and a high frequency voltage is applied from the power source 15. By grounding the metal case 5 and the metal mesh 10 with the coaxial cable 13 in this way, particularly the surface treatment apparatus 1 of the present invention
When used in the field, in addition to ensuring safety when the power supply frequency to be used is low, it can be configured as a gun type so that it can be moved integrally, thus improving workability. It is of course possible to ground the metal mesh 10 by another method if there is no inconvenience in work.

As for gas supply, a predetermined gas is supplied from the device 7 to the gas inlet 6 through the flexible tube 8 to replace the inside of the dielectric tube 2 with the predetermined gas. When a high frequency voltage is applied from the power supply 15 to one electrode 3a, both electrodes 3
Gas discharge is generated inside the dielectric tube 2 between a and 3b. Various reactions such as dissociation, ionization, and excitation of the gas due to plasma exist in the gas in the region 17 in the discharge state, and these reactions generate excited species of the gas and active species such as ions. . By continuously supplying the gas from the gas supply device 7 to the gas introduction port 6, the gas containing the active species is directed from the gas ejection port 9 toward the surface of the processing target material 11 as a reactive gas flow. Erupted.

The high-frequency electrode pair 3a, 3b is fixed so as not to be movable relative to the dielectric tube 2 in FIG. 1, but according to another embodiment of the present invention, the dielectric tube 2 is provided on the outer circumference thereof in the axial direction thereof. It can be slidably attached to. Therefore,
The position where the gas discharge occurs inside the dielectric tube 2 and the discharge region thereby can be easily changed so as to approach or separate from the gas ejection port 9 along the axial direction.
Accordingly, the surface treatment is performed in consideration of the use conditions such as the type of gas introduced from the gas supply device 7, or the influence of the discharge or direct exposure to the radiant heat and active species of the electrode on the workpiece 11. Can be adjusted.

Naturally, the light emission of the discharge near the high-frequency electrodes 3a, 3b is strong, and when the applied high-frequency power increases, the discharge region 17 expands inside the dielectric tube 1.
Further, when the electrodes 3a and 3b are located near the gas ejection port 9, the discharge is ejected from the gas ejection port 9 and a phenomenon like a plasma torch is generated. Similarly, by controlling the high frequency power applied and the flow rate of oxygen or helium contained in the introduced gas, the phenomenon can be promoted or suppressed. For example, when the flow rate of helium reaches its peak at a certain flow rate, and when the flow rate of oxygen becomes too large, the discharge itself becomes an arc discharge rather than a glow discharge.

Further, since the high frequency electrodes 3a and 3b are arranged outside the dielectric tube 2 and are not exposed to the plasma as described above, the influences of the consumption of the electrodes and the contamination of the material to be processed due to the sputtering are prevented. be able to. Furthermore, in continuous use over a long period of time, it is possible to reduce the thermal influence of the radiant heat of the electrodes 3a and 3b on the material to be treated.

As described above, by providing the metal mesh 10 at the gas ejection port 9, the ions and electrons in the plasma contained in the gas flow are trapped and neutralize, and the harmful effects of the ions on the material 11 to be treated are provided. Can be prevented in advance. However, if there is substantially no electrical damage due to ions due to the material to be treated, or if there is no risk of electric shock due to work conditions, the structure of the device, etc., the metal mesh 10 may not necessarily be provided.

When the metal mesh 10 is provided near the gas ejection port 9 and the electrode pairs 3a and 3b are brought close to the gas ejection port 9, the capacity integrated type is provided between the electrode 3a on the power supply side and the metal mesh 10. Gas discharge occurs. Further, gas discharge may occur alternately between the power supply electrode 3a, the ground electrode 3b, and the metal mesh 10 at least partly due to the influence of the applied power, the flow rate of the introduced gas, the flow rate ratio, and the like.
Such a phenomenon is the same even when the surface of the metal mesh 10 is covered with an insulator. However, in that case, arc discharge between the electrode 3a on the power supply side and the metal mesh 10 is prevented. However, if the insulator covering the metal mesh 10 is thick,
The ion trap effect, which is the original purpose, is reduced.

Experiments were carried out to examine the effect of the discharge jumping out from the gas ejection port 9 on the material to be treated when the metal mesh 10 was not provided. The potential difference between the material to be treated and the ground potential was measured with an oscilloscope while changing the power supply frequency of the high frequency power supply 7 to find out how much potential the electrically floating metal was exposed to the discharge. The results are shown below. Here, Vdc is a potential when a direct current is applied, and Vp-p is a potential when an alternating current is applied.

(Power supply frequency) (Measurement potential) 13.56 MHz ... Vdc = 1 V, Vp-p = 3V 400 kHz ... Vdc = -20 V, Vp-p = 10 V 20 kHz ... Vdc = -20 V, Vp-p = 30 V Also, For 400 kHz or less, a large pulsed potential of 50 V or more was occasionally measured. From these results, when a person comes into direct contact with the discharge area 17 or holds a metal in an electrically floating state in his / her hand for treatment, use some kind of commonly used electric shock preventive measures as a preventive measure. Is preferred. The same applies when the material to be processed is susceptible to electrical damage.

On the other hand, when the metal mesh 10 is provided, the above voltages Vdc and Vp- are irrespective of the power supply frequency.
Since both p are 0V, safe processing is possible for both the human body and the material to be processed. However, especially when the power supply frequency is 40
In the case of 0 kHz or less, caution is required because if the applied power is increased, there is a possibility that the discharge region 17 may further spread out and the arc may be generated by jumping out from the metal mesh 10.

Further, according to the present invention, the material 11 to be processed, which is the material to be processed, can be cooled or heated. Such heating / cooling of the material 11 to be processed may be achieved by indirectly controlling the temperature of the material 11 to be processed by heating the holder 2 with a sheath heater or cooling it with a water pipe. The material 11 to be treated may be heated to 200 ° C. or higher depending on conditions due to discharge, a gas flow ejected or radiant heat of the electrode 3. Therefore, when it is necessary to protect the processed material 11 against heat, the processed material 11 is processed while being cooled. On the other hand, when the material to be treated 11 does not need protection against heat, conversely, it should be actively heated.
Since the present invention is a kind of reduction treatment method utilizing a chemical reaction, the reaction is often promoted by heating. Further, when the discharge treatment according to the present invention is performed while heating the solder and components on the material to be treated 11 while heating the melting point of the solder or higher, the soldering can be performed simultaneously with the surface treatment.

As another heating method, a light source such as a halogen lamp can be used. According to this method, it is possible to quickly heat the surface to be cleaned, reduce the loss of time, and relatively easily heat the material to be processed even if it has a complicated shape with large irregularities. Moreover, you may irradiate short wavelength light, ie, ultraviolet rays, using the said light source. In this case, not only the heating effect but also the effect of cutting the chemical bond of the organic substance to further improve the cleaning ability can be obtained.

When performing the discharge treatment for a long time, it is preferable to cool the high frequency electrodes 3a and 3b. This is intended to cool the dielectric tube 2 that is directly exposed to the discharge, and various known methods are possible. For example, when a water cooling pipe or the like is used as a cooling method for the high frequency electrodes 3a and 3b, it is necessary to use an insulating water cooling pipe, and the length thereof is 30 cm or more in consideration of conductivity of water. Is desirable.

In addition, in the above-described embodiment, when removing organic substances such as flux from the surface of the material 11 to be processed, ultraviolet rays are emitted to the surface of the material 11 to be processed by the ultraviolet ray generating means arranged in the vicinity of the material 11 to be processed. Irradiation may be performed to decompose organic substances, or hot air or cold air may be fed by the blowing means to directly heat or cool the material 11 to be treated. Further, by further providing the blowing means or the means for vibrating the material to be treated 11, particles covered with an organic substance such as a resist can be simultaneously removed.

By using the above-described surface treatment apparatus 1 and exposing to the active species generated in the introduced gas by gas discharge, the surface of the material to be treated 11 is modified and the wettability is greatly improved. The voltage applied to the electrodes 3a and 3b is 13.56 MHz depending on the type of the introduced gas,
It is expedient to use a high frequency voltage of a few 10 kHz, for example 20 kHz. As the gas introduced from the gas supply device 7 into the dielectric tube 2, any gas such as helium or other rare gases, nitrogen, compressed air, oxygen or the like which does not adversely affect the material to be treated can be used. . However,
For example, when oxidation is not preferable for the material to be treated 11, it is preferable to use a gas other than oxygen.

When it is desired to remove the organic substances attached to the surface of the material 11 to be treated, for example, the flux remaining after soldering, a mixed gas of helium and oxygen can be introduced from the gas supply device 7. As a result, oxygen ions, active species such as excited species are generated, and these react with the organic matter to form carbon monoxide, carbon dioxide, and water vapor, and leave the surface of the material to be treated. This reaction gas is used as the material to be treated 1
It can be exhausted by a duct arranged in the vicinity of 1.

For example, in one embodiment, a mixed gas of helium and oxygen is used as the introduction gas, the flow rates of helium and oxygen are 20 SLM and 200 SCCM, respectively, and the flow rate ratio of oxygen is about 1%. And frequency 1
A high frequency voltage of 3.56 MHz was applied with a power of 80W. Inside the dielectric tube 2, a slightly bluish white discharge (plasma) was generated. In this case, the generated active species are oxygen radicals. As the material 11 to be processed, a ceramic substrate (7059 glass manufactured by Corning) is used, and a novolac-based resist (OFPR- manufactured by Tokyo Ohka Co., Ltd.) is formed on the substrate.
800) was applied for 1 micron and baked. The resist, which is an organic substance, and oxygen radicals contained in the gas flow react with each other to form water vapor, carbon dioxide, etc., which are removed from the surface of the material to be treated.

Even if compressed air or a mixed gas of nitrogen and oxygen is used as the discharge gas instead of the mixed gas of helium and oxygen, the effect of removing the organic matter, that is, the ashing effect can be obtained. Further, even when the introduced gas is a rare gas alone, the ashing effect can be similarly obtained.

For example, only helium gas is supplied into the dielectric tube 2 through the flexible tube 8 to generate a discharge of only helium gas, and a gas flow containing the active species is ejected from the gas ejection port 9. Oxygen radicals are generated by energy exchange between oxygen in the atmosphere, which naturally exists near the gas ejection port 9 and the metal mesh 10, and between the gas ejection port 9 and the material 11 to be treated, and helium radicals generated by electric discharge, and ashing is performed. To do. Therefore, in this case, it is better to control the discharge region 17 so as to jump out from the gas ejection port 9 toward the material 11 to be treated.
More effective ashing is possible when 0 is removed. According to this method, since the discharge inside the dielectric tube 2 is performed only with the rare gas, the inside of the dielectric tube 1 is prevented or suppressed from being contaminated, and not only the discharge stability can be obtained for a long time. However, there is a cost advantage because it is unnecessary to supply oxygen as a reaction gas.

Nitrogen and fluorine compounds (C
F ₄ , C ₂ F ₆ , SF ₆ or the like) or a gas containing an organic substance can be used to remove an oxide, for example, a CuO oxide film formed on the surface of the copper pad, from the surface of the processing target material 11. . In this case, the oxide reacts with nitrogen ions, active species such as excited species to form nitrogen oxides, or reacts with active species such as fluorine ions and excited species to form fluorides to be treated. Separate from the surface of the material 11. In the case of a gas containing an organic substance, the oxide on the surface of the material to be treated is a hydroxy compound which reacts with an active substance such as an organic substance generated by dissociation, ionization, and excitation of the organic substance, carbon, an ion of hydrogen, and an excited species. The oxo compound becomes carboxylic acid, carbon dioxide, water vapor, etc. and leaves the surface of the material to be treated.

The same effect can be obtained by applying the organic substance to the surface of the material 11 to be treated. In this case, the plasma dissociates, ionizes, and excites the gas in the discharge region 17 to raise the energy state. A part of the organic substance applied to the surface of the material to be treated is evaporated and exposed to a discharge to dissociate, ionize, and excite, and become an active substance such as an organic substance, carbon or hydrogen ion, and an excited species. The other part receives energy from a gas active species having a high energy state, and dissociates, ionizes, or excites it to become an active species such as an organic substance, carbon or hydrogen ion, or an excited species. With these active species, the same action and effect as in the case of using the gas to which the organic substance is added can be obtained. Moreover, this active species does not remain on the surface of the material to be treated like chlorine compounds contained in the flux.

Similarly, as a gas capable of obtaining an etching effect for removing oxides from the surface of the material 11 to be treated, there is, for example, helium or a mixed gas of compressed air and carbon tetrafluoride (CF ₄ ). Also, oxygen may be used instead of compressed air. Carbon tetrafluoride has an effect of suppressing the spread of the discharge, and when it is put in too much, the localization becomes severe inside the dielectric tube 2, and the discharge region 17 becomes difficult to pop out from the gas ejection port 9. . However, conversely, once the discharge region 17 jumps out from the gas ejection port 9, the hem is drawn on the surface of the material 11 to be processed and spreads, and the etching region is expanded.

In this example, when the flow rate of the mixed gas was helium 20 SLM and CF ₄ 100 SCCM, the etching rate was about 10 μm / min. Further, when oxygen of about 100 SCCM was added as a mixed gas, the etching rate increased. For example, for helium, a fluorine compound (for example, CF ₄ ) is 0.5
~ 5%, preferably 1%, oxygen 0.5-5%, preferably 1
It has been confirmed by the inventor of the present application that the etching effect is maximized in the case of a mixed gas system containing 100%.

In general, when a high frequency voltage is applied using a rare gas such as helium under atmospheric pressure or a pressure in the vicinity thereof, gas discharge is likely to occur and the discharge is evenly given to the exposed member. However, the cost is increased because the gas itself is expensive. Therefore, only when the discharge is started, a rare gas such as helium or argon, which easily causes a discharge, is introduced from the gas supply device 7, a voltage is applied to generate a discharge, and then another suitable inexpensive gas is changed. You can also In another method, a rare gas such as helium and a mixed gas of oxygen, CF ₄ or CF ₄ and a reaction gas such as oxygen are supplied from the gas supply device 7 to the gas introduction port 6 through the flexible tube 8. The supply of only the rare gas is stopped when the discharge is generated. Then, only the reaction gas is discharged. In this case, the discharge is maintained, but its form is likely to be arc discharge.

For example, in the case of a mixed gas of helium and oxygen, the smaller the oxygen flow rate ratio, the lower the electric power to be applied and the discharge can be started. However, even if the flow rate of oxygen is low, if the flow rate of helium is low, it becomes difficult for discharge to occur. Furthermore, in terms of sustaining the discharge, a discharge having a smaller oxygen flow ratio can sustain a discharge similar to a clean glow discharge. When the oxygen flow rate is increased, the discharge region 17 is localized, and eventually shifts to the hoss corona, or changes into a form such as arc discharge accompanied by loud noise. When a discharge such as this arc discharge occurs, the temperature of the portion of the dielectric tube 2 near the discharge region 17 rises. Once the discharge is started, the discharge continues even at an oxygen flow rate ratio where it is difficult to start the discharge. However, by making the dielectric tube 2 as thin as possible, 15 mm or less in this embodiment, and having a thin wall thickness of 1 mm or less in this embodiment, many hoss coronas were observed without shifting to arc discharge.

As described above, it is also possible to use only the reaction gas or a mixed gas of nitrogen and the reaction gas from the beginning without using the rare gas at all. In particular, a stable hoss corona can be obtained by reducing the power supply frequency of the high frequency power supply 15. For example, when a high frequency voltage of 20 kHz is used, the discharge can be started by compressed air. In this method, even if the inside of the dielectric tube 2 shifts to arc discharge, the processing speed does not decrease so much, so that the discharge region 17
By paying attention to the cooling, the heat resistant temperature of the material 11 to be treated, etc., the running cost can be considerably reduced.
This method is suitable mainly when the material to be treated is resistant to thermal and electrical damage and low-cost treatment is desired, and contributes to CFC-less and triethane-less activities for global environmental protection. .

FIG. 2 shows a modification of the embodiment of FIG. 1 which has a means for supplying a reactive gas separately from the gas supply device 7. The reactive gas supply means comprises a gas conduit 18 opening between the gas outlet 9 and the metal mesh 10. Only a rare gas, for example, helium is supplied from the gas supply device 7 to the dielectric tube 2, and a discharge of only helium gas is generated. On the other hand, from the reactive gas supply means, oxygen for ashing, compressed air for improving wettability, CF ₄ for etching or mixed gas of CF ₄ and oxygen for etching, etc., depending on the purpose of processing. Of the reactive gas is supplied from the gas conduit 18 to the region between the gas ejection port 9 and the metal mesh 10. Energy exchange between the helium radicals, which are generated by gas discharge and which become a gas flow and are ejected from the gas ejection port, and the reactive gas generate reactive active species, thereby surface-treating the material 11 to be treated. Of course, if you remove the metal mesh 10,
More efficient surface treatment is possible.

As described above, according to the present invention, the surface of the material to be treated is dry-cleaned and modified to significantly improve the wettability, the oxide is removed by etching, or the flux or the like remaining after soldering is applied. It is also possible to easily and surely remove the organic substance. Further, according to the present invention, these effects can be further enhanced by adding water to the reactive gas containing the active species. In particular, the inventor of the present invention has confirmed that the processing effect of the etching effect is extremely high. For example, if a mixed gas of helium and oxygen tetrafluoride is used to remove the CuO film on the surface of the copper pad of the substrate and water such as water vapor is added to it, it takes about 20 minutes without adding water. The conventional removal work could be achieved in only about 20 seconds.

FIGS. 13 to 15 show specific structures for adding water to enhance the effect of the discharge treatment according to the present invention. In the embodiment shown in FIG. 13, a bypass is provided in the middle of a pipe 72 for supplying a gas from the gas supply device 7 to the surface treatment device 71, and the gas is branched off. Send to. Water, preferably pure water 75, is stored in the tank 74.
Are stored and heated by the heater 76 to facilitate generation of water vapor. The gas introduced into the tank 74 is returned to the pipe 72 containing water vapor, mixed with the gas directly fed from the gas supply device 7, and supplied to the surface treatment device 71.

By thus containing the water in the gas sent to the surface treatment apparatus 71, there is no risk of dew condensation on the material to be treated, which is convenient. Further, the amount of water to be added depends on the opening of the valve 73 and the heater 76.
It is adjusted by adjusting the temperature of the water 75 in the 4.

In another embodiment shown in FIG. 14, an atomizer 77 is provided in the middle of a pipe 72 leading from the gas supply device 7 to the surface treatment device, and water 75 is supplied from a tank 74 to the atomizer 77. Thereby, moisture can be added to the gas sent to the processing apparatus. In this case, a heater similar to that of the embodiment of FIG.
By supplying to No. 7, atomization of water can be promoted. Further, a blower means and a pipe line are provided separately from the gas supply device 7 and the pipe 72 to force the water atomized by the atomizer 77 directly to the surface treatment device, for example, the first device.
It can also be fed into the dielectric tube 2 in the embodiment.

In the embodiment of FIG. 15, the water 7 in the tank 74 is
5 is heated by the heater 76 to generate steam, and the pipe 7
It can be directly supplied to the vicinity of the surface of the material to be treated, which is to be subjected to the electric discharge treatment by 8. In this case, there is a possibility that dew condensation may occur on the surface of the material to be treated having a relatively low temperature. Alternatively, the gas may be added to the gas before the discharge by connecting to the middle of the pipe 72.

Further, according to the present invention, it is possible to perform discharge processing on various materials to be treated such as metal and resin materials, and good results can be obtained even with oxides such as glass and ITO. It has been confirmed that For glass materials, it should be noted that excellent wettability can be obtained when nitrogen alone is used as the discharge gas, which allows, for example, pre-coating of solder on the glass surface of the liquid crystal panel. It is also possible to directly mount an IC chip or the like without connecting via the TAB substrate. In addition, even when the manufacturer name and model number are silk screen printed on the outer surface of the resin package of the resin-sealed electronic component, by applying the surface treatment of the present invention before printing or during drying after printing, ink adhesion Can be better.

FIG. 3 shows a second embodiment of the surface treatment apparatus according to the present invention. A high-frequency electrode 3 for applying high-frequency power is attached to the entire outer circumference of the dielectric tube 2, the outer side thereof is covered with an insulator 4, and a metal cover 19 is further provided on the outer side of the dielectric tube 2. It is provided to accommodate. Similar to the embodiment of FIG. 1, the dielectric tube 2
Has a gas inlet 6 at its upper end and a gas outlet 9 at its lower end. At the lower end of the metal cover 19, the gas ejection port 9
The metal mesh 10 is integrally connected to the lower position. The high frequency electrode 3 is also connected to a high frequency power source (not shown) via an impedance matching circuit (not shown). The metal cover 19 and the metal mesh 10 are grounded. The connection between the electrode 3 and the power source and the grounding of the metal cover 19 can be performed via the coaxial cable as in the first embodiment. When the inside of the dielectric tube 2 is replaced with the gas introduced from the gas inlet 6 and a high frequency voltage is applied to the electrode 3 from the power source, gas discharge occurs between the electrode and the grounded metal mesh 10. Then, while the metal mesh 10 traps the ions, a gas flow containing the active species of the introduced gas is applied to the material to be treated 11 to perform the surface treatment.

By taking such a discharge form,
It has been confirmed in an experiment conducted by the inventor of the present application that the processing speed can be improved without causing electrical damage to the material to be processed while ensuring safety.

Further, in the second embodiment, the metal mesh 10
It is also possible to adopt a configuration in which is not provided. In this case, the material to be treated 11 can be regarded as an electrode that is grounded, and a discharge can be generated between the material 11 and the high frequency electrode 3. This discharge method is effective when the material to be treated can ignore the electrical damage or when the surface treatment device is housed in some case to ensure safety.

FIG. 4 shows a third embodiment of the surface treatment apparatus according to the present invention. The surface treatment apparatus 20 includes a glass tube 21 having a coaxial double structure instead of the dielectric tube 2 of the first embodiment. The inner glass tube 22 has an open upper end and a closed lower end, and
3 has an upper end thereof closed to define an annular space 24 with the inner glass tube 22, and a gas ejection port 9 is opened at the tip of a generally conical lower portion. Further, a gas introduction port is provided at the upper end of the annular space 24 and is connected to an external gas supply device.

A round bar-shaped high frequency electrode 25 is removably inserted into the inner glass tube 22 through its upper end opening. The electrode 25 is connected to a high frequency power source through an impedance matching circuit by a coaxial cable, as in the first and second embodiments. On the outer peripheral surface of the lower conical portion of the outer glass tube 23, a conical electrode 26 grounded as a counter electrode of the high frequency electrode 25 is attached over the entire circumference. When gas is introduced into the annular cavity 24 from the gas introduction port and a high frequency voltage is applied to the electrode 25, gas discharge occurs between the power supply side electrode 25 and the ground electrode 26 in the annular cavity. By pulling out or inserting the electrode 25 in the inner glass tube 22 and changing its tip position, the position of the discharge region 27 can be moved and adjusted as in the first embodiment.

Although any of the above-mentioned embodiments employs the capacitive coupling type discharge system, the same action and effect can be obtained even in the inductive coupling type discharge form or in the non-polar discharge by the microwave of the short wavelength. can get. However, when microwaves are used, it becomes difficult to connect the impedance matching circuit and the high-frequency electrode with a coaxial cable, which may impair the convenience of work as a gun type used in the field. Further, in each of the above-described embodiments, the surface of the material to be treated is made thin by narrowing the gas outlet or disposing the mask means between the gas outlet (or the metal mesh) and the material 11 to be treated. It is possible to process only a limited part.

FIG. 5 schematically shows three examples of the surface treatment apparatus adopting the inductively coupled discharge type. The embodiment shown in FIG. 5A comprises a discharge vessel 28 made of an elongated, generally cylindrical dielectric material. The horizontally arranged discharge tube 28 is provided with a gas introduction port 29 communicating with the gas supply device at one end and closed at the other end. A coil-shaped electrode 30 connected to a high frequency power source is wound around the outer circumference of the discharge tube 28 over substantially the entire length. An insulator is coated on the outside of the coil electrode 30, and a metal cover covers the entire discharge tube 28 on the outside thereof. Further, the discharge tube 28 is provided with a plurality of gas ejection ports 31 on its outer periphery in a straight line along the axial direction. In such a configuration, when the coil electrode 30 applies a high frequency voltage, a gas discharge in which the discharge region 32 spreads throughout the discharge tube 28 is generated. Then, a gas flow containing active species due to discharge is jetted from each gas jet port 31 toward the surface of the material to be processed.

In the modified embodiment of FIG. 5B, the discharge tube 28 made of a dielectric material is vertically arranged, and the coil electrode 30 is wound around the outer circumference thereof. A gas introduction port (not shown) is provided at the upper end of the discharge tube 28, and a gas ejection port 31 is formed at the lower end of each of the plural branched ends. In this configuration, since the discharge region 32 is formed at a position separated from the gas ejection port 31, even if the gas ejection port 31 is not provided with a metal mesh, electrical damage to the material to be processed and safety to the human body are prevented. No need to worry.

In another embodiment shown in FIG. 5C, the lower end of the discharge tube 28 around which the coil electrode 30 is also wound forms a gas ejection port 31 expanding in a horn shape. This allows
With a relatively small discharge area 32, a large area of the material to be treated can be surface-treated at one time. Further, when the surface treatment is performed in an environment in which the periphery of the material to be treated is not affected, the gas ejection port 31 can be completely covered with the material to be treated, which is convenient.

FIG. 6 schematically shows a processing apparatus 33 suitable for locally performing discharge processing on a material to be processed as needed on site. The processing device 33 has a so-called gun-type structure that an operator can hold in his / her hand when necessary, and a discharge generating section 35 is provided inside a cylindrical nozzle 34 having an opening at its tip. Has been. Discharge generator 35
Has a basic structure similar to that of each of the above-described embodiments, is connected to a gas supply device and a power source (not shown), and a reactive gas flow containing active species generated by discharge is discharged from the lower part of the discharge generation part 35. , And is ejected toward the surface of the processing target material 11 while being guided by the tip end opening 36 of the nozzle 34.

FIG. 7A shows a surface treatment device 40 in which a discharge generating part 37 and a nozzle part 38 for injecting a reactive gas flow are separately provided and connected by a flexible tube 39. The discharge generating unit 37 is built in a fixed or movable main body 41 into which a power source, a gas supply device, and the like (not shown) are integrally incorporated, and the reactive gas flow generated there is fed through a flexible tube 39. The nozzle 27 ejects the material 11 to be processed. The length of the flexible tube is 5m, preferably 2m
To some extent, the active species can effectively reach the material to be treated. By thus forming the nozzle portion 38 as a separate body, workability can be improved and the processing capacity of the device 40 can be increased as necessary.

The nozzle portion 38 is the flexible tube 3
It is detachably attached to the tip of 9. Such a replaceable nozzle portion 42 is shown in FIG. 7B. Figure 7
The nozzle part 38 of A has a relatively large disk shape and can process a large area at a time, whereas the nozzle part 4 of FIG.
2 has a rectangular shape and is suitable for processing a relatively small portion. By properly exchanging the nozzle portion in this way, it is possible to easily cope with changes in the object to be processed and the use conditions, and the flexibility in operation is improved.

As described above, according to the present invention, the surface treatment apparatus and the material to be treated can be moved relatively easily, whereby a large number of portions can be treated or they can be treated at once. It is possible to increase the obtained area. When the frequency of the high-frequency power source used is 13.56 MHz or less, the impedance matching circuit and the high-frequency electrode are connected by the coaxial cable 13 to make the movement particularly easy, and an automated field system using a robot or the like. Is possible.

FIG. 8 shows an embodiment of a so-called line type surface treatment apparatus capable of linearly treating the surface of a material to be treated at one time. The surface treatment device 43 is provided with a pair of thin dielectric plates 44 made of quartz and facing each other at a constant narrow interval. The narrow space defined between them along the longitudinal direction of both dielectric plates 44 forms a gas inlet 45 whose front and rear ends are closed and whose upper opening is connected to the gas supply device. At the same time, the lower opening forms a gas ejection port 46 having a narrow width and extending in the longitudinal direction by inclining the lower portions of both dielectric plates 44 inward. Further, according to another embodiment, the gas ejection port 46 can be formed by a large number of small nozzles arranged in a straight line.

On the outer side surfaces of both dielectric plates 44, a pair of high frequency electrode plates 47 extending over the entire length along the longitudinal direction are arranged at opposite positions. The outside of the high frequency electrode plate 47 is covered with an insulator 48, and a metal cover 49 is attached to the outside of the high frequency electrode plate 47 for the purpose of protecting the electrode plate 47 and shielding electromagnetic waves. Similar to the case of the first embodiment, the electrode plate pair 47 is slidable in all directions on the outer surface of the dielectric plate 44 while facing each other. Therefore, it is possible to easily change the position where the gas discharge occurs and the discharge region between the vacant spaces between the dielectric plates 44. Further, the metal cover 49 may have a structure including the entire surface treatment apparatus 43.

One electrode plate 47 is connected to the impedance matching circuit and the high frequency power source via the coaxial cable as in the above-mentioned embodiment. The other electrode plate 47
Is electrically connected to the metal cover 49 and is grounded via the mesh metal on the outer circumference of the coaxial cable. Further, both electrode plates 47 are provided with a cooling means in preparation for continuous processing for a long time. Further, a metal mesh (not shown) can be disposed between the material to be processed and the lower side of the gas ejection port 46, and this can be connected to the metal cover 49 to be grounded.

When gas is introduced from the gas inlet 45 to replace the interior of the chamber and a high frequency voltage is applied to the electrode 47, the dielectric plate 44 is formed between the electrodes 47 in the chamber and in the vicinity thereof.
A gas discharge is generated over the entire length in the longitudinal direction. The reactive species of the gas activated by this discharge are applied to the surface of the processing target material 11 arranged below the gas ejection port 46. In the present embodiment, with the above configuration, the material 11 to be processed is linearly processed, and a large area can be processed by relatively moving the material 11 to be processed and the processing device 43. Also in this case, of course, a non-polar discharge by microwaves can be used instead of the high frequency discharge.

When the position of the electrode plate 47 is moved downward along the outer surface of the dielectric plate 44 and brought close to the gas ejection port 46, the discharge jumps out from the gas ejection port and the material 11 to be treated is discharged. Will be directly exposed to the activated species. When the electrode plate 47 is moved upward to separate the discharge region from the gas ejection port 46, the reactive species are exposed to the material 11 to be treated as a gas flow flowing out from the gas ejection port.

When the surface treatment apparatus 43 of this embodiment is used to remove organic substances such as flux remaining on the surface of the material 11 to be treated, a mixed gas of, for example, helium and oxygen is introduced into the chamber. Introduce. In this embodiment, the wall thickness is 1
Using a surface treatment device in which a pair of dielectric plates 44 of 2 mm are arranged facing each other at an interval of 2 mm, the flow rates of helium and oxygen are 20 SLM and 200 SCCM, respectively, and the flow rate ratio of oxygen is about 1%, and 13.56 MHz. High frequency voltage of 80
The ceramic substrate coated with the resist was surface-treated by applying power of W. Oxygen radicals were generated as a reaction species by the discharge, and reacted with the resist on the substrate to become water vapor, carbon dioxide, etc., which were removed.

FIG. 9 shows another embodiment of the line type surface treatment apparatus, which has a sectional structure similar to that of the embodiment of FIG. Two vertical inner glass plates 50 facing each other with a constant narrow interval and having a lower end joined to each other so as to have a substantially U-shaped cross section, and parallel to the inner glass plates 50 with a predetermined interval on the outside thereof. And two vertical outer glass plates 51 facing each other. A cross section U defined between the inner glass plate 50 and the outer glass plate 51
The V-shaped vacant chamber extends over the entire length along the longitudinal direction thereof, and a large number of gas introduction ports 52 connected to the gas supply device are arranged at the upper end of the vacant chamber, and the outer glass plates are provided at the lower end. A lower portion of 51 is inclined inward, and a gas outlet 53 having a constant narrow width is formed linearly over the entire length in the longitudinal direction as in the embodiment of FIG.

Inside the inner glass plate 50, a thin flat plate-shaped high-frequency electrode 54 extending over the entire length in the longitudinal direction thereof.
However, the T-shaped upper end of the inner glass plate 50 is locked to the upper end of the inner glass plate 50 so that it can be removed. On the outer surface of the lower portion that inclines inward of each outer glass plate 51, a thin plate-shaped electrode 55 that extends over the entire length in the longitudinal direction.
Are arranged near the gas ejection port 53. Electrode 54
Is connected to a high frequency power supply and the electrode 55 is grounded as its counter electrode. Further, the upper end of the electrode 54 protruding from the inner glass plate 50 is covered with an insulator 56, and the outer side thereof is covered with a metal cover 5 so as to cover the entire surface treatment apparatus.
7 is attached.

With this structure, the electrode 5
When a high frequency voltage is applied between Nos. 4 and 55, gas discharge occurs in the chamber close to the gas ejection port 53 between them. Therefore, in the present embodiment, there is an advantage that the surface treatment with good power efficiency is performed by forming the discharge region 58 in the vicinity of the material to be treated.

FIG. 10 shows still another embodiment of the line type. In this embodiment, similar to the outer glass plate 51 in the embodiment of FIG. 9, two vertical outer glass plates 59 are opposed to each other, and the lower portions thereof are respectively inclined inward so that a longitudinal direction is formed therebetween. A straight gas ejection port 60 is formed to extend. Each outer glass plate 59 is provided with a pair of thin plate-shaped high-frequency electrodes 61 along its inner surface over the entire length in the longitudinal direction from the upper end to a position just above the lower portion inclined. The inner glass plate 62 is formed so as to seal the electrode 61 with the outer glass plate 59. As a counter electrode of the electrode 61 connected to the high frequency power source, a pair of grounded electrodes 63 are attached to the outer surface of the lower portion of the outer glass plate 59 in proximity to the gas ejection port 60. Further, the gas inlet 64 is formed by an opening defined by the upper ends of the inner glass plates 62 facing each other. In this embodiment, as in the embodiment of FIG. 9, gas discharge is generated in the chamber close to the gas ejection port 60 between the adjacent high frequency electrodes 61 and ground electrodes 63.

11 and 12 show a modification of the discharge generating structure used in the surface treatment apparatus according to the present invention. In FIG. 11, a pair of dielectric plates 64 each having a plurality of corresponding grooves formed on the opposite surfaces are joined together,
Moreover, a pair of electrodes 65 and 66 are attached to both side surfaces thereof at positions facing each other. One of the electrodes 65 and 66 is connected to a high frequency power source and the other is grounded, and gas is introduced into the gas flow path 67 formed by the groove to generate discharge. Moreover, such a gas flow path can also be formed by perforating a single member made of a dielectric material.

In FIG. 12, the gas ejection port 68 is formed in an L shape, and a pair of electrodes 69 and 70 are arranged on both sides thereof. The shape of the gas ejection port 68 can be various shapes other than the L-shape in accordance with the shape of the portion to be surface-treated on the material to be treated, whereby only the limited portion of the material to be treated can be changed to other portions. Can be processed without affecting the

Next, a method of manufacturing a package type semiconductor device by using the above-described surface treatment method of the present invention to connect an electronic component and a lead and seal with a resin will be described. As shown in FIG. 16, the surface treatment apparatus 1 of FIG.
Immediately below the gas ejection port 9 and the metal mesh 10 of
An electronic component 79 and a lead 80 are arranged as a material to be processed. The electronic component 79 and the leads 80 are for manufacturing a DIP (Dual Inline Package) type semiconductor device as shown in FIG. 17, and each electrode of the bare chip electronic component 79 adhered on the die pad 81. The pad and the corresponding lead 80 are connected to each other by a wire 82 of gold or aluminum, for example.

When a gas is introduced from the gas supply device and a voltage is applied to the electrode, a discharge is generated in the dielectric tube 2 and a gas flow containing active species of the gas is ejected from the gas ejection port 9, The electronic component 79 and the leads 80 are exposed through the metal mesh 10 and a desired surface treatment is performed. Next, as shown in FIG. 17, these are encapsulated with a mold resin 83 to form a package 84. By this surface treatment, the wettability of the surfaces of the electronic component 79 and the leads 80 is significantly improved, so that the contact angle with the mold resin 83 is reduced and the adhesion between the two is improved. If there is a gap at the interface between the mold resin 83 and the electronic component 79 or the lead 80, the moisture that has entered the package 84 is accumulated in the gap and contaminates the electronic component 79, or expands due to the high temperature during reflow to form a package. It may cause cracks. By improving the adhesiveness of the mold resin according to the present invention, these problems are solved, the reliability is remarkably improved, and the yield is improved.

If the mold resin 83 has good adhesion with the lead 80 but has a problem with the adhesion with the electronic component 79, or if the lead 80 is easily corroded by the gas containing the active species, The mask means is arranged between the metal mesh 10 and the electronic component 79 and the lead 80, or the size of the gas ejection port 9 is reduced so that only the electronic component 79 is exposed to the gas containing the active species. You can do it. Conversely, when the mold resin 83 has good adhesion to the electronic component 79 but has a problem with the adhesion to the lead 80, or when the electronic component 79 is easily affected by electrons or ions due to discharge, the same applies. It is sufficient to use a mask means or change the shape of the gas ejection port 9 so that only the lead 80 is exposed to the gas containing the active species.

In another embodiment, the electronic component 79 and the lead 8 are
The surface treatment can be performed by using the surface treatment apparatus 1 before connecting to 0 by wire bonding. In this case, the electronic component 79 and the lead 80 adhered to the die pad 81 can be processed side by side in the state immediately before wire bonding, or the electronic component 79 and the lead 80 can be separately surface-treated. can do. In these cases, since the surfaces of the electronic component 79 and the lead 80 are respectively active, the bondability between the two is improved and, at the same time, the adhesiveness with the resin when sealed with the resin is also improved. Of course, only one of the electronic component 79 and the lead 80 can be surface-treated. Further, according to the present invention, only the necessary part of the electronic component 79 or the lead 80 can be selectively processed with an accuracy of about 2 to 3 mm.

In another embodiment, a TCP type semiconductor device can be manufactured by encapsulating an electronic component connected to the wiring of the tape carrier with resin instead of the package such as the DIP described above. For example, after wire bonding the electrode of the IC chip to the electrode pad of the tape carrier and before resin sealing by transfer molding, or after ILB connecting the IC chip to the inner lead of the tape carrier and before resin sealing by potting mold. The surface treatment with a gas containing the above-mentioned active species,
Adhesion with the molding resin can be improved. Further, the semiconductor manufacturing method of the present invention is the same as the DIP of the above embodiment.
SIP, ZIP, MFP, SOP as well as TCP and TCP
The same can be applied to various semiconductor devices in resin-sealed packages such as.

As for the gas species to be used, experiments were conducted using helium, argon, oxygen, nitrogen, hydrogen, and a mixed gas thereof. As a result, the mold resin 83 and the electronic component 79 or the lead for all of these gas species were used. 80
It was confirmed that the adhesiveness with Further, the power source was tested at frequencies of 10 KHz, 400 KHz and 13.56 MHz, and it was confirmed that the adhesion between the mold resin 80 and the electronic component 79 or the lead 80 was improved at all frequencies. The results of these experiments are as shown below.

First, the improvement of the wettability by the surface treatment of the present invention was confirmed. In this experiment, the surface of the material to be treated was subjected to the surface treatment according to the present invention for 5 seconds, the contact angle was measured using a droplet contact angle meter, the surface treatment was not performed at all, and activation was performed under reduced pressure. With the conventional technology using the oxygen gas
The contact angle of the sample treated for 5 minutes was measured in the same manner and compared with the present invention. As shown in Table 1, the results showing the remarkable effect of the present invention were obtained although there was some difference depending on the gas used. Was given.

[0149]

[Table 1] Next, an experiment was conducted on the crack generation of the package due to the adhesion between the mold resin and the electronic component or the lead. An electronic component and a set of leads both subjected to the surface treatment of the present invention, an electronic component and a set of leads both subjected to the surface treatment of the prior art described above, and an electronic component both not subjected to any surface treatment and For the three sets of packages in which the lead set and the lead set are bonded together and then sealed with resin, 1
After drying at 25 ° C. for 10 hours and absorbing moisture in an atmosphere of temperature 85 ° C. and humidity 85% for 504 hours, reflow treatment was performed at 250 ° C. for 10 seconds, and the crack generation rate was confirmed. The results shown in Table 2 were obtained. was gotten. As a result, according to the present invention, the effect of improving the adhesiveness was confirmed to be at least the same level or more, although the processing time was only 1/180 of that of the prior art.

[0150]

[Table 2] Further, with respect to device destruction caused by damage to electronic parts caused by ions and electrons generated by discharge, the defective product occurrence rate was tested. In the experiment, an electronic component which was subjected to the surface treatment of the present invention for 1 hour using a power source of 10 KHz, and 1
When the defect occurrence rate of each of the electronic component which was also subjected to the surface treatment of the present invention for 1 hour and the electronic component which was subjected to the above-mentioned conventional surface treatment for 1 hour using a 3.56 MHz power source was examined, The results shown in Table 3 below were obtained. From this experimental result, it can be seen that the defect occurrence rate is the lowest in the case of the surface treatment of the present invention using a 13.56 MHz power supply. From this, it can be said that the frequency of MHz order is less damaged. However, since it takes about 5 seconds to actually carry out the surface treatment of the present invention regardless of the frequency of the power source used, it can be considered that practically no defect of the electronic component occurs at any frequency. .

[0151]

[Table 3] From the above experimental results, it can be seen that the best results are obtained when the surface treatment of the present invention is performed in an atmosphere containing oxygen or hydrogen. However, in these cases, of course, if the treatment with oxygen is carried out for a long time, the metal of the lead is oxidized and corroded, and if hydrogen is used for a long time, the metal of the lead may be hydrogenated and embrittled. In reality, it is necessary to strictly control the processing conditions.

FIG. 18 schematically shows an embodiment of an apparatus capable of performing surface treatment according to the present invention in ILB (Inner Lead Bonding) for connecting electronic parts to a tape carrier. The ILB device 85 has a well-known structure including a take-up reel 87 for sending out the tape carrier 86, a bonding section 88 for performing bonding, and a take-up reel 89 for storing the tape carrier 86 after the bonding process, in addition to the known structure. A surface treatment device 90 for treating the surface of the tape carrier 86 is arranged in front of the portion 88. The tape carrier 86 is conveyed by a motor 91, guided by a plurality of guide rollers 92, and sent from a take-up reel 87 to a take-up reel 89 through a surface treatment device 90 and a bonding section 88. As is well known, the bonding section 88 has a bonding tool 93 that is vertically driven by a pressure cylinder, and an IC chip 95 positioned on a chip stage 94 is projected onto an inner hole of a tape carrier 86. The leads 96 are pressurized and heated to be connected.

The surface treatment apparatus 90 is, for example, as shown in FIG.
The gas supply device 7 has the same configuration as the surface treatment device of
By applying a high frequency voltage from the power supply 15 to the gas sent from, the gas is discharged in the dielectric tube 2 under a pressure near atmospheric pressure. The gas containing the active species generated by the discharge is ejected from the gas ejection port 9 at the lower end of the dielectric tube 2 toward the tape carrier 86 located immediately below the gas ejection port 9. By exposing to the active species, organic / inorganic contaminants are removed from the surfaces of the inner lead 96 and the tape carrier 86. As a result, the bondability between the inner lead 96 and the IC chip 95 is significantly improved. In this case, if the bonding surface of the IC chip 95 is similarly surface-treated by using a separate surface processing device, the bonding property between the two is further improved. Further, the surface treatment simultaneously modifies the surfaces of the inner lead 96 and the tape carrier 86 to improve the wettability. Therefore, when these are resin-sealed in a later step, the adhesion with the mold resin is improved. This ultimately improves the yield of TCP (Tape Carrier Package).

The surface treatment method of the present invention can be used for dry cleaning in the production of liquid crystal displays. As shown in FIG. 19, a manufacturing process of a liquid crystal display is roughly divided into a pattern substrate manufacturing process, a cell manufacturing process, and a liquid crystal module manufacturing process in the order of processes. First, in the patterned substrate manufacturing process, after cleaning the transparent electrode substrate, necessary electrodes and wirings are patterned by using a well-known vacuum deposition method or CVD method to form a patterned substrate. next,
In the cell manufacturing process, after the patterned substrate is washed, an alignment film is formed, and then further washed to form a liquid crystal cell.
A polarizing plate is attached to the liquid crystal cell having a predetermined size to form a liquid crystal panel. Finally, in the module manufacturing process, the liquid crystal panel that has passed the inspection is connected to a driving IC chip and a mounting substrate and assembled in a housing to complete a liquid crystal display.

In this embodiment, in the cleaning step in the patterned substrate manufacturing step and the two cleaning steps in the cell manufacturing step, the above-mentioned surface treatment by plasma discharge under the atmospheric pressure is performed on the entire surface of the substrate. . This makes it possible to remove organic / inorganic contaminants from the surface of the substrate and improve wettability for a later step. According to the present invention, since it is possible to clean the substrate by the single-wafer processing, it is not necessary to pay attention to the pot life as in the case of the batch processing, especially regarding the wettability, and the subsequent patterning step and alignment film forming step. It is possible to optimally control the production in consideration of the schedule such as the above, the place where each work is performed, and the problem of transportation between them. In addition, since the substrate after cleaning can be sent to a subsequent process in real time, in-line can be easily realized. In addition, only a portion of the substrate can be selectively cleaned if desired.

Further, as a pretreatment for the step of attaching the polarizing plate to the surface of the liquid crystal cell, the surface treatment under the atmospheric pressure according to the present invention is similarly performed. As a result, it is possible to easily remove the flux, the organic substances and the inorganic substances such as the residues of the scribes and the stains of the fingerprints, which have adhered to the surface of the liquid crystal cell in the previous step, at a high speed and at a low cost. This eliminates the need for the conventional manual work of removing stains, saves labor and processing time, and does not physically damage the liquid crystal cell surface. It is possible to surely eliminate the possibility that air bubbles will remain and the display defect such as a defective image will occur.

In the final module manufacturing process, a final inspection is performed after the housing is assembled, and if a defective semiconductor chip is found on the liquid crystal panel, it is removed and replaced with a good chip. For example, in the liquid crystal panel 96 shown in FIG. 20, a plurality of driving semiconductor chips 98 are directly connected to the glass surface of the liquid crystal cell 97 by a so-called COG (chip on glass) method. According to the invention, only the defective semiconductor chip 99 found is removed, for example by heating its joint.

Next, before the non-defective semiconductor chip is replaced and mounted, the bonding region 100 is selectively exposed to a gas containing an active species by the discharge according to the present invention near the atmospheric pressure to perform the surface treatment. I do. In this case, between the surface treatment apparatus 101 and the liquid crystal cell 97, as shown in FIG.
It is convenient to use the mask 103 having the openings 102 corresponding to 00 because it is possible to easily prevent the other semiconductor chips 98 and their joints from being affected. Therefore, it is not necessary to remove all the semiconductor chips unlike the conventional wet cleaning or various dry cleaning, which is difficult to perform local treatment. As a result of an experiment conducted by the inventor of the present application, by such surface treatment, a non-defective semiconductor chip in which an adhesive, a brazing material, etc. remaining after removing the defective product 99 from the bonding region 100 are mounted on other parts It was removed without any effect on the etc. At the same time, joint area 1
The wettability of No. 00 was improved, and good semiconductor chips could be connected well. Further, in the cleaning of the joint portion, it was difficult to remove the alkaline residue contained in the fingerprints only by the surface treatment, but it is possible to completely clean the surface by combining the cleaning with pure water before or after the surface treatment. did it.

Further, in this embodiment, the gun type surface treatment apparatus 101 can be used for in-line processing, and by integrating this with the semiconductor chip bonding apparatus, a cleaning apparatus-equipped bonding apparatus was obtained. . Further, the present invention can naturally be similarly applied to a liquid crystal panel in which a liquid crystal cell and a mounting substrate are connected by a method other than the COG method, and a printed circuit board or the like having electronic components mounted thereon other than the liquid crystal panel. In a semiconductor device, it can be similarly applied to cleaning a bonding portion, an adhesive agent, and the like.

Further, the surface treatment according to the present invention can be used not only for surface treatment of the bonding surface of the semiconductor device described in connection with the above embodiment but also for various purposes. In particular, since the surface treatment apparatus of the present invention can perform treatment on the upper and lower surfaces of the material to be treated regardless of the orientation of the material to be treated, it is possible to clean the inside of injection molding dies and various tanks and equipment. Can also be used for

FIG. 22 shows the surface treatment apparatus 104 of the present invention.
A preferred embodiment of a configuration in which the mold 106, the CD stamper, and the like of the injection molding machine 105 are cleaned in-process while being mounted on the injection molding machine is shown using. In the surface treatment apparatus 104, the surface treatment unit 107 having the gun type structure as shown in FIG. 6 is attached to the tip of an arm 109 of a robot 108 which is freely movable on site. The arm 109 can be freely moved in three dimensions. Further, in the surface treatment unit 107, as in the embodiment of FIG. 7, only the nozzle may be provided at the tip of the arm 109 and the discharge unit main body may be built in the robot 108.

In this embodiment, the surface treatment section 107 is instructed by instructing the robot 108 to perform a predetermined operation in advance.
Can be moved to automatically wash the mold 106, the CD stamper and the like without removing them from the injection molding machine 105. Moreover, according to the present invention, by forcibly feeding the gas containing the active species to the surface of the material to be treated, for example, even when the surface of the mold has a complicated shape or large unevenness, it is sufficiently treated in a short time. be able to. According to the experiment by the inventor of the present application, the polycarbonate of the CD material attached to the surface of the CD stamper can be easily washed in about 20 minutes,
The processing could be performed at a speed about 10 times faster than that of the conventional vacuum processing. Further, an organic material such as an adhesive attached to the surface of the mold can be easily removed, and at the same time, the releasability including the CD stamper is remarkably improved.

Although the preferred embodiments of the present invention have been described in detail above, the present invention can be implemented by making various modifications and changes to the above embodiments within the technical scope thereof. For example, the dielectric tube and its gas ejection port can be designed in various shapes other than the cylindrical shape depending on the usage conditions.

[0164]

Since the present invention is constituted as described above, it has the following effects.

According to the surface treatment method of the present invention, the method according to claim 1
By configuring as described in 1), the configuration of the device can be simplified and miniaturized, so that the cost can be significantly reduced, the device can be moved to improve workability, and inline And on-site processing can be easily achieved. Moreover, since the gas containing the active species due to the discharge is irradiated under a pressure near the atmospheric pressure, it is possible to perform high-speed processing with less damage to the material to be processed, and to use it regardless of the shape and material of the material to be processed. Various surface treatments such as wettability improvement, etching, ashing, and dry cleaning can be effectively performed in a wide range of fields depending on the gas.

And, according to the surface treatment apparatus of the present invention,
By configuring as described in claim 23, it is possible to realize the above-mentioned surface treatment method, and it is possible to provide a movable device which can be worked on site like a so-called gun type by miniaturization, Moreover, by adopting a structure in which the electrodes are not exposed to discharge, it is possible to reduce the wear of the electrodes, improve the durability of the entire apparatus, and further reduce the damage to the material to be treated.

Further, according to the method of manufacturing a semiconductor device of the present invention, since the reduced pressure environment is not required, the device can be downsized and the cost can be reduced, and the surface treatment can be performed at a high speed by the discharge under the atmospheric pressure. Therefore, the number of electrons and ions is less than that of excited species, the damage to electronic components or leads is small, and single-wafer processing is possible. The process of joining electronic components and leads or the process of resin-sealing them Inlining can be easily achieved.

Further, according to the method of manufacturing a semiconductor device of the present invention, by constructing as described in claim 49, even when a defective electronic component is partially present, all the conventional electronic components can be manufactured. Since it is not necessary to remove the electronic component and the processing can be easily performed at a high speed, the number of steps and labor can be significantly reduced, and the cost can be reduced.

According to the method of manufacturing a liquid crystal module of the present invention, by constructing as described in claim 47, the occurrence of defective sticking of the polarizing plate to the liquid crystal panel is eliminated, and the yield is improved. At the same time, it is possible to easily attach the polarizing plate without causing physical damage to the liquid crystal panel, and it is possible to improve the productivity.

Further, according to the method of manufacturing a liquid crystal module of the present invention, by constructing as described in claim 48, the liquid crystal panel can be washed with a high processing capacity, so that the single-wafer processing is possible, It is possible to perform production control with a margin without being largely limited to the pot life after the treatment, and to achieve in-line with the post-process.

[Brief description of drawings]

FIG. 1A is a longitudinal sectional view showing a first embodiment of a surface treatment apparatus according to the present invention, and FIG. 1B is a sectional view taken along line BB thereof.

FIG. 2 is a vertical sectional view showing a modified example of the embodiment shown in FIG.

FIG. 3A is a vertical sectional view showing a second embodiment of the surface treatment apparatus, and FIG. 3B is a sectional view taken along line BB thereof.

FIG. 4 is a vertical sectional view showing a third embodiment of the surface treatment apparatus.

FIG. 5 is a cross-sectional view of FIGS. 5A to 5C showing different examples of induction discharge type electrode structures.

FIG. 6 is a perspective view showing a so-called gun type surface treatment apparatus according to the present invention.

FIG. 7A is a partial cross-sectional perspective view showing the configuration of a surface treatment apparatus in which a discharge generation unit and a nozzle are separately provided.
B is a diagram showing a modified example of the nozzle portion.

FIG. 8 is a perspective view showing a cross section of the configuration of a line type surface treatment apparatus according to the present invention.

9 is a perspective view showing another embodiment of the line type surface treatment apparatus different from FIG. 8. FIG.

FIG. 10 is a perspective view showing still another embodiment of the line type surface treatment apparatus different from FIG.

FIG. 11 is a perspective view showing another configuration example of a gas channel and an electrode.

FIG. 12 is a perspective view showing still another configuration example of a gas channel and an electrode.

FIG. 13 is a block diagram showing a configuration for allowing a reactive gas to contain water.

FIG. 14 is a block diagram showing another configuration different from that of FIG.

FIG. 15 is a block diagram showing still another configuration different from FIG.

16 is an enlarged view showing a state in which the joined electronic component and the lead are subjected to surface treatment using the surface treatment apparatus of FIG. 1 before resin sealing.

FIG. 17 is a cross-sectional view showing a resin-sealed electronic component and a lead.

FIG. 18 is a schematic diagram showing an apparatus for inner bonding electronic components to a tape carrier using the surface treatment apparatus according to the present invention.

FIG. 19 is a flowchart showing steps of manufacturing a liquid crystal display.

FIG. 20 is a plan view for explaining how to remove a defective electronic component from the liquid crystal cell.

FIG. 21 is a cross-sectional view showing a liquid crystal cell that is partially cleaned using a mask.

FIG. 22 is a configuration diagram schematically showing an injection molding machine and a surface treatment apparatus used integrally therewith.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Surface treatment device 2 Dielectric tube 3a, 3b High frequency electrode 4 Insulator 5 Metal case 6 Gas inlet 7 Gas supply device 8 Flexible tube 9 Gas ejection port 10 Metal mesh 11 Processed material 13 Coaxial cable 1 14 Impedance matching circuit 14 15 high frequency power supply 16 screw 17 discharge area 18 gas conduit 19 metal cover 20 surface treatment device 21 glass tube 22 inner glass tube 23 outer glass tube 24 annular cavity 25 high frequency electrode 26 ground electrode 27 discharge area 28 discharge tube 29 gas inlet 30 Coil electrode 31 Gas ejection port 32 Discharge region 33 Treatment device 34 Nozzle 35 Discharge generation part 36 Tip opening 37 Discharge generation part 38 Nozzle part 39 Flexible tube 40 Surface treatment device 41 Main body 42 Nozzle part 43 Surface treatment device 44 Dielectric plate 45 Gas Inlet 46 Gas outlet 47 High-frequency electrode plate 48 Insulator 49 Metal cover 50 Inner glass plate 51 Outer glass plate 52 Gas inlet 53 Gas outlet 54 High-frequency electrode 55 Electrode 56 Insulator 57 Metal cover 58 Discharge area 59 Outer glass plate 60 Gas Jet 61 Electrode 62 Inner Glass Plate 63 Grounding Electrode 64 Dielectric Plate 65, 66 Electrode 67 Gas Flow Path 68 Gas Jet 69, 70 Electrode 71 Surface Treatment Device 72 Pipe 73 Valve 74 Tank 75 Pure Water 76 Heater 77 Fog Chemical device 78 Pipe 79 Electronic component 80 Lead 81 Die pad 82 Wire 83 Mold resin 84 Package 85 ILB device 86 Tape carrier 87 Unwinding reel 88 Bonding part 89 Take-up reel 90 Surface treatment device 91 Motor 92 Guide roller 93 Bonde Swing tool 94 Chip stage 95 IC chip 96 Inner lead 97 Liquid crystal cell 98 Driving semiconductor chip 99 Defective semiconductor chip 99 100 Bonding region 101 Surface treatment device 102 Open hole 103 Mask 104 Surface treatment device 105 Injection molding machine 106 Mold 107 Surface treatment unit 108 robot 109 arm

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical display location C23F 4/00 E 8417-4K H01L 21/3065 (72) Inventor Osamu Kurashina 3 Yamato, Suwa City, Nagano Prefecture 3-5, Seiko Epson Co., Ltd. (72) Inventor Yasuo Yamazaki 3-35 Yamato, Suwa, Nagano Prefecture 3-5 Seiko Epson Co., Ltd. (72) Tokukata Hakata, 3-3 Yamato, Suwa City, Nagano Prefecture No. 5 in Seiko Epson Co., Ltd. (72) Inventor Yohei Kurashima 3-3 Yamato, Suwa City, Nagano Prefecture No. 3-5 Seiko Epson Co., Ltd. (72) Makoto Anan 3-3-5 Yamato, Suwa City, Nagano Prefecture Seiko -In Epson Corporation

Claims (49)

[Claims] 1. A predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path. And a step of exposing the material to be treated to the active species of the gas generated by the discharge to treat the surface thereof. 2. The surface treatment method according to claim 1, wherein the gas discharge is caused by applying a high frequency voltage to an electrode provided outside the gas flow path made of the dielectric material. 3. The surface treatment method according to claim 1, wherein the gas discharge is generated by a non-polar discharge using microwaves. 4. The surface of the material to be treated is exposed to the active species by applying a gas stream containing the active species without directly exposing the surface of the material to the gas discharge. Item 4. The surface treatment method according to any one of Items 3. 5. The surface treatment method according to claim 4, wherein the material to be treated is arranged near the outlet of the gas flow path. 6. The surface treatment method according to claim 4, wherein the gas flow is applied to the surface of the material to be treated through a pipe connected to the outlet of the gas passage. 7. The surface treatment method according to claim 4, wherein the gas flow is applied to the surface of the material to be treated through a metal mesh. 8. The surface treatment method according to claim 7, wherein the gas discharge is generated between the metal mesh and the electrode as a ground electrode. 9. The surface treatment method according to claim 1, wherein the surface of the material to be treated is selectively exposed to the active species of the gas. 10. The surface treatment method according to claim 1, wherein the predetermined gas contains a rare gas at least at the start of the gas discharge. 11. The predetermined gas is any one of helium, nitrogen and compressed air.
The surface treatment method according to claim 10. 12. The surface treatment method according to claim 1, wherein the predetermined gas contains helium or nitrogen and oxygen. 13. The surface treatment method according to claim 1, wherein the predetermined gas contains helium or compressed air and a fluorine compound. 14. The predetermined gas is composed of 100% rare gas, and the reactive gas existing in the vicinity of the material to be processed is activated by the gas discharge, and the surface of the material to be processed is exposed to the active species. Claim 1 thru | or 9 characterized by the above-mentioned.
The surface treatment method according to any one of 1. 15. The surface treatment method according to claim 14, wherein the reaction gas is contained in an atmosphere near the material to be treated. 16. The surface treatment method according to claim 14, wherein the reaction gas is introduced near the material to be treated. 17. The material to be treated is exposed to a gas containing the active species in the presence of water.
The surface treatment method according to claim 16. 18. The surface treatment method according to claim 17, wherein the material to be treated is exposed to the gas in water. 19. The surface treatment method according to claim 1, wherein the material to be treated is cooled or heated. 20. The electrode for applying a high frequency voltage and / or
20. The surface treatment method according to claim 1, further comprising cooling the portion of the gas flow path exposed to the discharge. 21. The method according to claim 1, wherein the surface of the material to be processed is processed while moving the material to be processed.
0. The surface treatment method according to any one of 0. 22. A gas flow path formed of a dielectric material,
Means for introducing a gas into the gas flow path, means for generating a gas discharge in the gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path, and active species generated by the discharge And a means for exposing the material to be treated to a gas containing the surface treatment apparatus. 23. The surface treatment apparatus according to claim 22, wherein the gas discharge generating means includes an electrode provided outside the gas flow path and a means for applying a high frequency voltage to the electrode. 24. The electrode is movably provided outside the gas flow path.
3. The surface treatment device according to item 3. 25. The gas discharge generating means generates a non-polar discharge by microwaves.
2. The surface treatment device as described in 2. 26. The surface treatment apparatus according to claim 23, wherein the gas discharge generating means has a grounded counter electrode, and gas discharge is generated between the gas discharge generating means and the counter electrode. 27. The method according to claim 22, wherein the means for exposing the material to be treated to the gas containing the active species comprises an outlet of the gas flow passage for ejecting a gas flow of the gas. 27. The surface treatment device according to any one of 26. 28. The means for exposing the material to be treated to a gas containing the active species comprises a conduit for guiding the gas flow from the outlet to the vicinity of the material to be treated. The surface treatment device described. 29. The means for exposing the material to be treated to a gas containing the active species further comprises a metal mesh disposed between the outlet and the material to be treated. Alternatively, the surface treatment apparatus according to claim 28. 30. The metal mesh is grounded,
30. The surface treatment apparatus according to claim 29, wherein a gas discharge is generated between the electrode and the metal mesh. 31. The surface treatment according to claim 22, further comprising mask means for selectively exposing the surface of the material to be treated to the gas containing the active species. apparatus. 32. A means for introducing a reaction gas into the vicinity of the material to be treated is further provided, wherein the gas introduced into the gas flow path by the gas introducing means is 100% rare gas, The reaction gas is activated by gas discharge of the gas.
1. The surface treatment device according to any one of 1. 33. The method according to claim 2, further comprising means for allowing water to be contained in the gas containing the active species.
33. The surface treatment device according to claim 2. 34. The surface treatment apparatus according to claim 22, further comprising means for supplying water to the surface of the material to be treated exposed to the gas containing the active species. 35. The surface treatment apparatus according to claim 22, wherein the material to be treated is placed in water and exposed to the gas containing the active species in water. 36. The method according to claim 22, further comprising means for cooling or heating the material to be processed.
The surface treatment apparatus according to any one of 1. 37. The electrode for applying a high frequency voltage and / or
37. The surface treatment apparatus according to claim 23, 24, 26, or 36, further comprising means for cooling a portion of the gas flow path exposed to the discharge. 38. The surface treatment apparatus according to claim 22, wherein the means for exposing the gas containing the active species and the material to be treated are relatively movable. 39. When the frequency of the voltage applied to the electrode is 13.56 MHz or less, the electrode is connected via a coaxial cable to an impedance etching circuit connected to the power supply of the high frequency voltage. Claim 23, Claim 24, Claim 26 to Claim 38 characterized.
The surface treatment apparatus according to any one of 1. 40. A method of manufacturing a package type semiconductor device by bonding an electronic component and a lead and encapsulating with a resin, wherein a dielectric is provided before the bonded electronic component and the lead are resin-sealed. A predetermined gas is introduced into a gas flow path formed of a material, a gas discharge is caused in the predetermined gas under the atmospheric pressure or a pressure in the vicinity of the gas flow path, and the gas is generated by the discharge. A method of manufacturing a semiconductor device, comprising performing a surface treatment step of exposing at least one of the bonded electronic component and lead to the active species of the gas. 41. The surface treatment step according to claim 40, wherein the lead is an inner lead of a tape carrier, and after the electronic component and the inner lead are connected and before resin sealing is performed. Of manufacturing a semiconductor device of. 42. A method for manufacturing a package-type semiconductor device by bonding an electronic component and a lead and encapsulating with a resin, wherein the package is formed of a dielectric material before the electronic component and the lead are bonded. A predetermined gas is introduced into the gas flow path, a gas discharge is generated in the predetermined gas under the atmospheric pressure or a pressure in the vicinity of the gas flow path, and the activity of the gas generated by the discharge is generated. A method of manufacturing a semiconductor device, which comprises performing a surface treatment step of exposing at least one of the electronic component and the lead to be bonded to the seed. 43. The manufacturing of a semiconductor device according to claim 42, wherein the lead is an inner lead of a tape carrier, and the surface treatment step is performed before connecting the electronic component and the inner lead. Method. 44. An apparatus for manufacturing a package-type semiconductor device by encapsulating a bonded electronic component and a lead with a resin, the surface treatment for surface-treating the bonded electronic component and the lead. And a resin sealing portion for encapsulating the electronic component and the lead surface-treated by the surface treatment portion with a resin, the surface treatment portion, a gas flow path formed of a dielectric material, Means for introducing a gas into the gas flow path, means for generating a gas discharge in the gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path, and active species generated by the discharge A device for manufacturing a semiconductor device, comprising: a means for exposing at least one of the bonded electronic component and lead to a gas containing the semiconductor device. 45. An apparatus for manufacturing a semiconductor device by bonding an electronic component and a lead together, and a surface treatment unit for surface-treating at least one of the electronic component and the lead before the bonding. , A bonding portion for joining the electronic component and the lead, the surface treatment portion, a gas flow path formed of a dielectric material, and a means for introducing gas into the gas flow path, Exposing at least one of the electronic component or the lead to a gas that generates a gas discharge in the gas under atmospheric pressure or a pressure in the vicinity of the gas flow path, and a gas containing an active species generated by the discharge. An apparatus for manufacturing a semiconductor device, comprising: 46. The lead is an inner lead of a tape carrier, and the surface treatment section is adapted to surface-treat the inner lead of the tape carrier fed from a reel before the bonding section. 46. The semiconductor device manufacturing apparatus according to claim 45. 47. A method of manufacturing a liquid crystal display by attaching a polarizing plate to a liquid crystal cell, connecting driving and power supply circuits, and then assembling a module, which is formed of a dielectric material. A predetermined gas is introduced into the gas flow passage, a gas discharge is generated in the predetermined gas under the atmospheric pressure or a pressure in the vicinity thereof in the gas flow passage, and the active species of the gas generated by the discharge. A method of manufacturing a liquid crystal module, which further comprises a surface treatment step of exposing the substrate. 48. A method for manufacturing a liquid crystal display by attaching a polarizing plate to a liquid crystal cell, and then connecting driving and power supply circuits to assemble a module, wherein the polarizing plate is attached to the liquid crystal cell. Before sticking, a predetermined gas is introduced into a gas flow path formed of a dielectric material, and a gas discharge is generated in the predetermined gas under atmospheric pressure or a pressure in the vicinity thereof in the gas flow path. And a surface treatment step of exposing the liquid crystal cell to the active species of the gas generated by the discharge, the method of manufacturing a liquid crystal display. 49. A method of manufacturing a semiconductor device, comprising the steps of mounting a plurality of electronic components, removing defective electronic components, replacing them with non-defective electronic components, and re-mounting them. After removing the electronic component and before connecting the non-defective electronic component, a predetermined gas is introduced into the gas flow channel formed of the dielectric material, and the pressure in the gas flow channel is at or near atmospheric pressure. To generate a gas discharge in the predetermined gas, the active species of the gas generated by the discharge,
A method of manufacturing a semiconductor device, comprising performing a surface treatment step of exposing at least one of the non-defective electronic component and the connection portion of the semiconductor device.