JP2000511300A - 減衰する埋め込まれた移相フォトマスク・ブランク - Google Patents
減衰する埋め込まれた移相フォトマスク・ブランクInfo
- Publication number
- JP2000511300A JP2000511300A JP09542465A JP54246597A JP2000511300A JP 2000511300 A JP2000511300 A JP 2000511300A JP 09542465 A JP09542465 A JP 09542465A JP 54246597 A JP54246597 A JP 54246597A JP 2000511300 A JP2000511300 A JP 2000511300A
- Authority
- JP
- Japan
- Prior art keywords
- photomask blank
- aluminum
- metal
- group
- optically absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims abstract description 47
- 230000005540 biological transmission Effects 0.000 claims abstract description 28
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 16
- -1 aluminum compound Chemical class 0.000 claims abstract description 15
- 230000002238 attenuated effect Effects 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 26
- 239000011195 cermet Substances 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 9
- 238000001459 lithography Methods 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 29
- 230000008021 deposition Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000008033 biological extinction Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000009965 tatting Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 150000002363 hafnium compounds Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1903996P | 1996-05-20 | 1996-05-20 | |
| US60/019,039 | 1996-05-20 | ||
| US08/797,442 | 1997-02-10 | ||
| US08/797,442 US5897976A (en) | 1996-05-20 | 1997-02-10 | Attenuating embedded phase shift photomask blanks |
| PCT/US1997/007954 WO1997044709A1 (en) | 1996-05-20 | 1997-05-09 | Attenuating embedded phase shift photomask blanks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000511300A true JP2000511300A (ja) | 2000-08-29 |
| JP2000511300A5 JP2000511300A5 (https=) | 2005-01-13 |
Family
ID=26691768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09542465A Ceased JP2000511300A (ja) | 1996-05-20 | 1997-05-09 | 減衰する埋め込まれた移相フォトマスク・ブランク |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5897976A (https=) |
| EP (1) | EP0900410B1 (https=) |
| JP (1) | JP2000511300A (https=) |
| CN (1) | CN1161656C (https=) |
| AT (1) | ATE246372T1 (https=) |
| DE (1) | DE69723829T2 (https=) |
| DK (1) | DK0900410T3 (https=) |
| ES (1) | ES2202620T3 (https=) |
| PT (1) | PT900410E (https=) |
| TW (1) | TW354391B (https=) |
| WO (1) | WO1997044709A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11184067A (ja) * | 1997-12-19 | 1999-07-09 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク |
| TW371327B (en) * | 1998-05-01 | 1999-10-01 | United Microelectronics Corp | Phase-shifting mask (PSM) and method for making the same |
| US6274280B1 (en) * | 1999-01-14 | 2001-08-14 | E.I. Du Pont De Nemours And Company | Multilayer attenuating phase-shift masks |
| JP4163331B2 (ja) * | 1999-07-14 | 2008-10-08 | アルバック成膜株式会社 | 位相シフタ膜の製造方法、位相シフトマスク用ブランクスの製造方法、および、位相シフトマスクの製造方法 |
| KR100725214B1 (ko) * | 1999-12-15 | 2007-06-07 | 다이니폰 인사츠 가부시키가이샤 | 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크 |
| US6524755B2 (en) | 2000-09-07 | 2003-02-25 | Gray Scale Technologies, Inc. | Phase-shift masks and methods of fabrication |
| US20020197509A1 (en) * | 2001-04-19 | 2002-12-26 | Carcia Peter Francis | Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks |
| US20040115537A1 (en) * | 2002-04-19 | 2004-06-17 | Carcia Peter Francis | Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks |
| US20040115343A1 (en) * | 2002-04-19 | 2004-06-17 | Carcia Peter Francis | Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks |
| JP3988041B2 (ja) * | 2002-10-08 | 2007-10-10 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びその製造方法 |
| JP2005284216A (ja) | 2004-03-31 | 2005-10-13 | Shin Etsu Chem Co Ltd | 成膜用ターゲット及び位相シフトマスクブランクの製造方法 |
| US20050260504A1 (en) * | 2004-04-08 | 2005-11-24 | Hans Becker | Mask blank having a protection layer |
| WO2021221123A1 (ja) * | 2020-04-30 | 2021-11-04 | 凸版印刷株式会社 | 反射型フォトマスクブランク及び反射型フォトマスク |
| JP7662307B2 (ja) * | 2020-06-30 | 2025-04-15 | テクセンドフォトマスク株式会社 | 反射型フォトマスクブランク及び反射型フォトマスク |
| JP7640231B2 (ja) * | 2020-05-14 | 2025-03-05 | テクセンドフォトマスク株式会社 | 反射型マスクブランク及び反射型マスク |
| JP7633832B2 (ja) * | 2021-02-25 | 2025-02-20 | Hoya株式会社 | マスクブランク、反射型マスク、および半導体デバイスの製造方法 |
| CN114884925B (zh) * | 2022-04-18 | 2023-04-18 | 深圳市绿联科技股份有限公司 | 一种传输复合照片数据的方法、装置、系统以及电子设备 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW505829B (en) * | 1992-11-16 | 2002-10-11 | Dupont Photomasks Inc | A transmissive embedded phase shifter-photomask blank |
| WO1994017449A1 (en) * | 1993-01-21 | 1994-08-04 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| JP3324005B2 (ja) * | 1993-03-29 | 2002-09-17 | 大日本印刷株式会社 | 位相シフトフォトマスク用基板及びその製造法 |
| KR100295385B1 (ko) * | 1993-04-09 | 2001-09-17 | 기타지마 요시토시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법 |
| KR100311704B1 (ko) * | 1993-08-17 | 2001-12-15 | 기타오카 다카시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및그블랭크스의제조방법 |
| JP2611734B2 (ja) * | 1993-12-21 | 1997-05-21 | 日本電気株式会社 | 位相シフトマスク |
| JP2719493B2 (ja) * | 1993-12-22 | 1998-02-25 | ホーヤ株式会社 | 位相シフトマスクブランク及び位相シフトマスク |
| JPH07199447A (ja) * | 1993-12-28 | 1995-08-04 | Sony Corp | 単層ハーフトーン方式位相シフトマスク及びその作製方法 |
| JP3351892B2 (ja) * | 1994-01-19 | 2002-12-03 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス |
| US5415953A (en) * | 1994-02-14 | 1995-05-16 | E. I. Du Pont De Nemours And Company | Photomask blanks comprising transmissive embedded phase shifter |
| JP3436581B2 (ja) * | 1994-03-18 | 2003-08-11 | 雪印乳業株式会社 | 乳糖分解酵素活性の高い菌体の製造法 |
| JP2837807B2 (ja) * | 1994-06-27 | 1998-12-16 | ホーヤ株式会社 | 位相シフトマスク及び位相シフトマスクブランク |
| US5679483A (en) * | 1994-12-20 | 1997-10-21 | Siemens Aktiengesellschaft | Embedded phase shifting photomasks and method for manufacturing same |
| JPH08272074A (ja) * | 1995-03-29 | 1996-10-18 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス |
-
1997
- 1997-02-10 US US08/797,442 patent/US5897976A/en not_active Expired - Fee Related
- 1997-05-09 JP JP09542465A patent/JP2000511300A/ja not_active Ceased
- 1997-05-09 DK DK97924665T patent/DK0900410T3/da active
- 1997-05-09 EP EP97924665A patent/EP0900410B1/en not_active Expired - Lifetime
- 1997-05-09 DE DE69723829T patent/DE69723829T2/de not_active Expired - Fee Related
- 1997-05-09 ES ES97924665T patent/ES2202620T3/es not_active Expired - Lifetime
- 1997-05-09 WO PCT/US1997/007954 patent/WO1997044709A1/en not_active Ceased
- 1997-05-09 CN CNB971947996A patent/CN1161656C/zh not_active Expired - Fee Related
- 1997-05-09 PT PT97924665T patent/PT900410E/pt unknown
- 1997-05-09 AT AT97924665T patent/ATE246372T1/de not_active IP Right Cessation
- 1997-06-02 TW TW086107545A patent/TW354391B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US5897976A (en) | 1999-04-27 |
| CN1219248A (zh) | 1999-06-09 |
| ES2202620T3 (es) | 2004-04-01 |
| DE69723829T2 (de) | 2004-05-27 |
| ATE246372T1 (de) | 2003-08-15 |
| EP0900410B1 (en) | 2003-07-30 |
| PT900410E (pt) | 2003-11-28 |
| WO1997044709A1 (en) | 1997-11-27 |
| TW354391B (en) | 1999-03-11 |
| DE69723829D1 (de) | 2003-09-04 |
| EP0900410A1 (en) | 1999-03-10 |
| CN1161656C (zh) | 2004-08-11 |
| DK0900410T3 (da) | 2003-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000511300A (ja) | 減衰する埋め込まれた移相フォトマスク・ブランク | |
| KR101584383B1 (ko) | 포토마스크 블랭크, 포토마스크 및 포토마스크 블랭크의 제조 방법 | |
| KR101042468B1 (ko) | 포토마스크 블랭크, 포토마스크, 및 이들의 제조 방법 | |
| JP3938940B2 (ja) | 移相フォトマスク・ブランク及びそれを製造する方法 | |
| US7217481B2 (en) | Photomask blank, photomask, methods of manufacturing the same and methods of forming micropattern | |
| US5939225A (en) | Thin film materials for the preparation of attenuating phase shift masks | |
| JP2911610B2 (ja) | パターン転写方法 | |
| US6858357B2 (en) | Attenuated embedded phase shift photomask blanks | |
| TW201007347A (en) | Phase shift mask blank and phase shift mask | |
| JP2003315977A (ja) | リソグラフィーマスクブランクの製造方法及び製造装置 | |
| CN107765508A (zh) | 用于制备半色调相移掩模坯的方法、半色调相移掩模坯、半色调相移掩模和薄膜形成设备 | |
| US6730445B2 (en) | Attenuated embedded phase shift photomask blanks | |
| JP2004529386A (ja) | 減衰位相シフトフォトマスクブランクを製造するためのイオンビーム蒸着法 | |
| Niibe et al. | Suppression of columnar-structure formation in Mo-Si layered synthetic microstructures | |
| JP2004318088A (ja) | フォトマスクブランク及びフォトマスク並びにフォトマスクブランクの製造方法 | |
| EP1582921A2 (en) | Film-depositing target and preparation of phase shift mask blank | |
| WO2004017140A1 (ja) | マスクブランクの製造方法、転写マスクの製造方法、マスクブランク製造用スパッタリングターゲット | |
| US6682860B2 (en) | Attenuated embedded phase shift photomask blanks | |
| JP2004530923A (ja) | バイナリフォトマスクブランクを製造するためのイオンビーム蒸着法 | |
| JP2004318087A (ja) | 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクブランクの製造方法 | |
| KR20000015804A (ko) | 감쇠성 매립 상 전이 포토마스크 블랭크_ | |
| JP3372283B2 (ja) | 炭素を含む窒化物人工格子およびその作製方法 | |
| JP3194881B2 (ja) | 位相シフトマスクブランクおよび位相シフトマスク | |
| Lee et al. | Deposition and characterization of Ta, TaN/sub x/, and Ta/sub 4/B films for NGL mask application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040510 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040510 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070424 |
|
| A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20070912 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20071023 |