ES2202620T3 - Placas virgenes para fotomascaras atenuadoras de desplazamiento integral. - Google Patents

Placas virgenes para fotomascaras atenuadoras de desplazamiento integral.

Info

Publication number
ES2202620T3
ES2202620T3 ES97924665T ES97924665T ES2202620T3 ES 2202620 T3 ES2202620 T3 ES 2202620T3 ES 97924665 T ES97924665 T ES 97924665T ES 97924665 T ES97924665 T ES 97924665T ES 2202620 T3 ES2202620 T3 ES 2202620T3
Authority
ES
Spain
Prior art keywords
virgin
aluminum
plates
deposition
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97924665T
Other languages
English (en)
Spanish (es)
Inventor
Peter Francis Carcia
Roger Harquail French
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of ES2202620T3 publication Critical patent/ES2202620T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
ES97924665T 1996-05-20 1997-05-09 Placas virgenes para fotomascaras atenuadoras de desplazamiento integral. Expired - Lifetime ES2202620T3 (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US1903996P 1996-05-20 1996-05-20
US19039P 1996-05-20
US797442 1997-02-10
US08/797,442 US5897976A (en) 1996-05-20 1997-02-10 Attenuating embedded phase shift photomask blanks

Publications (1)

Publication Number Publication Date
ES2202620T3 true ES2202620T3 (es) 2004-04-01

Family

ID=26691768

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97924665T Expired - Lifetime ES2202620T3 (es) 1996-05-20 1997-05-09 Placas virgenes para fotomascaras atenuadoras de desplazamiento integral.

Country Status (11)

Country Link
US (1) US5897976A (https=)
EP (1) EP0900410B1 (https=)
JP (1) JP2000511300A (https=)
CN (1) CN1161656C (https=)
AT (1) ATE246372T1 (https=)
DE (1) DE69723829T2 (https=)
DK (1) DK0900410T3 (https=)
ES (1) ES2202620T3 (https=)
PT (1) PT900410E (https=)
TW (1) TW354391B (https=)
WO (1) WO1997044709A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11184067A (ja) * 1997-12-19 1999-07-09 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
TW371327B (en) * 1998-05-01 1999-10-01 United Microelectronics Corp Phase-shifting mask (PSM) and method for making the same
US6274280B1 (en) * 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks
JP4163331B2 (ja) * 1999-07-14 2008-10-08 アルバック成膜株式会社 位相シフタ膜の製造方法、位相シフトマスク用ブランクスの製造方法、および、位相シフトマスクの製造方法
KR100725214B1 (ko) * 1999-12-15 2007-06-07 다이니폰 인사츠 가부시키가이샤 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크
US6524755B2 (en) 2000-09-07 2003-02-25 Gray Scale Technologies, Inc. Phase-shift masks and methods of fabrication
US20020197509A1 (en) * 2001-04-19 2002-12-26 Carcia Peter Francis Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
US20040115537A1 (en) * 2002-04-19 2004-06-17 Carcia Peter Francis Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks
US20040115343A1 (en) * 2002-04-19 2004-06-17 Carcia Peter Francis Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
JP3988041B2 (ja) * 2002-10-08 2007-10-10 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びその製造方法
JP2005284216A (ja) 2004-03-31 2005-10-13 Shin Etsu Chem Co Ltd 成膜用ターゲット及び位相シフトマスクブランクの製造方法
US20050260504A1 (en) * 2004-04-08 2005-11-24 Hans Becker Mask blank having a protection layer
WO2021221123A1 (ja) * 2020-04-30 2021-11-04 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP7662307B2 (ja) * 2020-06-30 2025-04-15 テクセンドフォトマスク株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP7640231B2 (ja) * 2020-05-14 2025-03-05 テクセンドフォトマスク株式会社 反射型マスクブランク及び反射型マスク
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
CN114884925B (zh) * 2022-04-18 2023-04-18 深圳市绿联科技股份有限公司 一种传输复合照片数据的方法、装置、系统以及电子设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW505829B (en) * 1992-11-16 2002-10-11 Dupont Photomasks Inc A transmissive embedded phase shifter-photomask blank
WO1994017449A1 (en) * 1993-01-21 1994-08-04 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
JP3324005B2 (ja) * 1993-03-29 2002-09-17 大日本印刷株式会社 位相シフトフォトマスク用基板及びその製造法
KR100295385B1 (ko) * 1993-04-09 2001-09-17 기타지마 요시토시 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법
KR100311704B1 (ko) * 1993-08-17 2001-12-15 기타오카 다카시 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및그블랭크스의제조방법
JP2611734B2 (ja) * 1993-12-21 1997-05-21 日本電気株式会社 位相シフトマスク
JP2719493B2 (ja) * 1993-12-22 1998-02-25 ホーヤ株式会社 位相シフトマスクブランク及び位相シフトマスク
JPH07199447A (ja) * 1993-12-28 1995-08-04 Sony Corp 単層ハーフトーン方式位相シフトマスク及びその作製方法
JP3351892B2 (ja) * 1994-01-19 2002-12-03 大日本印刷株式会社 ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter
JP3436581B2 (ja) * 1994-03-18 2003-08-11 雪印乳業株式会社 乳糖分解酵素活性の高い菌体の製造法
JP2837807B2 (ja) * 1994-06-27 1998-12-16 ホーヤ株式会社 位相シフトマスク及び位相シフトマスクブランク
US5679483A (en) * 1994-12-20 1997-10-21 Siemens Aktiengesellschaft Embedded phase shifting photomasks and method for manufacturing same
JPH08272074A (ja) * 1995-03-29 1996-10-18 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス

Also Published As

Publication number Publication date
US5897976A (en) 1999-04-27
CN1219248A (zh) 1999-06-09
DE69723829T2 (de) 2004-05-27
ATE246372T1 (de) 2003-08-15
EP0900410B1 (en) 2003-07-30
PT900410E (pt) 2003-11-28
WO1997044709A1 (en) 1997-11-27
TW354391B (en) 1999-03-11
DE69723829D1 (de) 2003-09-04
JP2000511300A (ja) 2000-08-29
EP0900410A1 (en) 1999-03-10
CN1161656C (zh) 2004-08-11
DK0900410T3 (da) 2003-10-06

Similar Documents

Publication Publication Date Title
ES2202620T3 (es) Placas virgenes para fotomascaras atenuadoras de desplazamiento integral.
KR100334921B1 (ko) 하프톤위상쉬프트포토마스크용블랭크,하프톤위상쉬프트포토마스크및이들의제조방법
JP3938940B2 (ja) 移相フォトマスク・ブランク及びそれを製造する方法
US6274280B1 (en) Multilayer attenuating phase-shift masks
KR20050039663A (ko) 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및 패턴전사 방법
US6979518B2 (en) Attenuated embedded phase shift photomask blanks
JP2004525423A (ja) 多層減衰位相シフトフォトマスクブランクを製造するためのイオンビーム蒸着法
KR20150138006A (ko) 위상 시프트 마스크 블랭크 및 그 제조 방법과 위상 시프트 마스크의 제조 방법
JP4197378B2 (ja) ハーフトーン位相シフトフォトマスク及びそのためのハーフトーン位相シフトフォトマスク用ブランクス並びにこれを用いたパターン形成方法
JPH08503557A (ja) フォトマスクブランク
KR102733488B1 (ko) 블랭크 마스크, 블랭크 마스크 성막장치 및 블랭크 마스크의 제조방법
KR102368448B1 (ko) 반도체 소자 제조 장치
US6682860B2 (en) Attenuated embedded phase shift photomask blanks
JP3213122B2 (ja) ２波長反射防止膜
JPH07295203A (ja) ハーフトーン位相シフトフォトマスク用ブランクスの製造方法
JP2001290257A (ja) ハーフトーン位相シフトフォトマスク及びそのためのハーフトーン位相シフトフォトマスク用ブランクス並びにこれを用いたパターン形成方法
JP5270465B2 (ja) サセプタおよびこれを用いた閃光照射方法ならびにフォトマスクブランクの製造方法
KR100497443B1 (ko) 감쇠식 내장형 위상 전이 포토마스크 블랭크
US5981109A (en) Using (LaNiO3) X (TiO2) 1-X and (LaNiO3) X (Ta2 O5) 1-X oxide absorption composites for attenuating phase shifting blanks and masks
TWI245167B (en) Attenuated embedded phase shift photomask blanks
KR20010082981A (ko) ＣｒＡＩＯ(Ｎ)Ｆ를 위상 쉬프터 물질로서 사용한 위상쉬프트 마스크 및 그 제조방법
KR20010095837A (ko) 에너지 트랩을 이용하여 소정 파장의 빛에 대한 투과율을조절한 위상 쉬프트 마스크 및 그 제조방법
JP2006228840A (ja) 軟ｘ線光学素子及び軟ｘ線光学機器