JP2000353700A - 高誘電率薄膜の形成方法および半導体装置の製造方法 - Google Patents

高誘電率薄膜の形成方法および半導体装置の製造方法

Info

Publication number
JP2000353700A
JP2000353700A JP11166205A JP16620599A JP2000353700A JP 2000353700 A JP2000353700 A JP 2000353700A JP 11166205 A JP11166205 A JP 11166205A JP 16620599 A JP16620599 A JP 16620599A JP 2000353700 A JP2000353700 A JP 2000353700A
Authority
JP
Japan
Prior art keywords
raw material
dipivaloylmethanate
thin film
forming
dpm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11166205A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000353700A5 (enExample
Inventor
Takaaki Kawahara
孝昭 川原
Mikio Yamamukai
幹雄 山向
Takeshi Horikawa
堀川　　剛
Masayoshi Taruya
政良 多留谷
Takehiko Sato
剛彦 佐藤
Shigeru Matsuno
繁 松野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11166205A priority Critical patent/JP2000353700A/ja
Priority to US09/444,297 priority patent/US6235649B1/en
Publication of JP2000353700A publication Critical patent/JP2000353700A/ja
Priority to US09/832,928 priority patent/US6448191B2/en
Publication of JP2000353700A5 publication Critical patent/JP2000353700A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP11166205A 1999-06-14 1999-06-14 高誘電率薄膜の形成方法および半導体装置の製造方法 Pending JP2000353700A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11166205A JP2000353700A (ja) 1999-06-14 1999-06-14 高誘電率薄膜の形成方法および半導体装置の製造方法
US09/444,297 US6235649B1 (en) 1999-06-14 1999-11-22 Method of forming high dielectric constant thin film and method of manufacturing semiconductor device
US09/832,928 US6448191B2 (en) 1999-06-14 2001-04-12 Method of forming high dielectric constant thin film and method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11166205A JP2000353700A (ja) 1999-06-14 1999-06-14 高誘電率薄膜の形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2000353700A true JP2000353700A (ja) 2000-12-19
JP2000353700A5 JP2000353700A5 (enExample) 2006-03-16

Family

ID=15827051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11166205A Pending JP2000353700A (ja) 1999-06-14 1999-06-14 高誘電率薄膜の形成方法および半導体装置の製造方法

Country Status (2)

Country Link
US (2) US6235649B1 (enExample)
JP (1) JP2000353700A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004114385A1 (ja) * 2003-06-20 2004-12-29 Kabushiki Kaisha Watanabe Shoko 気化方法及び気化器
JP2009129964A (ja) * 2007-11-20 2009-06-11 Fujitsu Microelectronics Ltd 有機金属原料、成膜装置及び半導体装置の製造方法

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JP2000353700A (ja) * 1999-06-14 2000-12-19 Mitsubishi Electric Corp 高誘電率薄膜の形成方法および半導体装置の製造方法
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6501121B1 (en) * 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
KR20050113549A (ko) * 2002-05-29 2005-12-02 가부시키가이샤 와타나베 쇼코 기화기 및 이를 사용한 각종 장치 그리고 기화방법
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
KR100496890B1 (ko) * 2003-08-05 2005-06-23 삼성전자주식회사 액체 케미컬 공급 시스템 및 이 장치를 이용한 액체케미컬 유출 절감 방법
EP3887567A4 (en) * 2018-11-29 2022-12-07 TSI Incorporated REDUCING OR ELIMINATION OF LIQUID DEGASSING

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US4888246A (en) * 1985-05-23 1989-12-19 Matsushita Electric Industrial Co., Ltd. Dielectric thin film, and method for making the thin film
US6110529A (en) * 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
JP2790581B2 (ja) 1992-02-17 1998-08-27 三菱電機株式会社 Ｃｖｄ法による酸化物系誘電体薄膜の製法
JP2799134B2 (ja) 1992-09-22 1998-09-17 三菱電機株式会社 チタン酸バリウムストロンチウム系誘電体薄膜用ｃｖｄ原料およびメモリー用キャパシタ
JP3118493B2 (ja) 1993-04-27 2000-12-18 菱電セミコンダクタシステムエンジニアリング株式会社 液体原料用ｃｖｄ装置
JPH0786807A (ja) * 1993-07-23 1995-03-31 Sony Chem Corp 誘電体フィルタ
JPH0794426A (ja) 1993-09-24 1995-04-07 Ryoden Semiconductor Syst Eng Kk Ｃｖｄ装置
US5538941A (en) * 1994-02-28 1996-07-23 University Of Maryland Superconductor/insulator metal oxide hetero structure for electric field tunable microwave device
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JP3547471B2 (ja) * 1994-03-09 2004-07-28 富士通株式会社 誘電体膜の気相成長方法
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US5776254A (en) 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
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JP3612839B2 (ja) 1996-02-13 2005-01-19 三菱電機株式会社 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置
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US6277436B1 (en) * 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
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JP2000353700A (ja) * 1999-06-14 2000-12-19 Mitsubishi Electric Corp 高誘電率薄膜の形成方法および半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004114385A1 (ja) * 2003-06-20 2004-12-29 Kabushiki Kaisha Watanabe Shoko 気化方法及び気化器
JP2009129964A (ja) * 2007-11-20 2009-06-11 Fujitsu Microelectronics Ltd 有機金属原料、成膜装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20010029090A1 (en) 2001-10-11
US6448191B2 (en) 2002-09-10
US6235649B1 (en) 2001-05-22

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