JP2000353700A5 - - Google Patents

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Publication number
JP2000353700A5
JP2000353700A5 JP1999166205A JP16620599A JP2000353700A5 JP 2000353700 A5 JP2000353700 A5 JP 2000353700A5 JP 1999166205 A JP1999166205 A JP 1999166205A JP 16620599 A JP16620599 A JP 16620599A JP 2000353700 A5 JP2000353700 A5 JP 2000353700A5
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JP
Japan
Prior art keywords
film
raw material
cvd apparatus
liquid
proposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999166205A
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English (en)
Japanese (ja)
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JP2000353700A (ja
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Publication date
Application filed filed Critical
Priority to JP11166205A priority Critical patent/JP2000353700A/ja
Priority claimed from JP11166205A external-priority patent/JP2000353700A/ja
Priority to US09/444,297 priority patent/US6235649B1/en
Publication of JP2000353700A publication Critical patent/JP2000353700A/ja
Priority to US09/832,928 priority patent/US6448191B2/en
Publication of JP2000353700A5 publication Critical patent/JP2000353700A5/ja
Pending legal-status Critical Current

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JP11166205A 1999-06-14 1999-06-14 高誘電率薄膜の形成方法および半導体装置の製造方法 Pending JP2000353700A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11166205A JP2000353700A (ja) 1999-06-14 1999-06-14 高誘電率薄膜の形成方法および半導体装置の製造方法
US09/444,297 US6235649B1 (en) 1999-06-14 1999-11-22 Method of forming high dielectric constant thin film and method of manufacturing semiconductor device
US09/832,928 US6448191B2 (en) 1999-06-14 2001-04-12 Method of forming high dielectric constant thin film and method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11166205A JP2000353700A (ja) 1999-06-14 1999-06-14 高誘電率薄膜の形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2000353700A JP2000353700A (ja) 2000-12-19
JP2000353700A5 true JP2000353700A5 (enExample) 2006-03-16

Family

ID=15827051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11166205A Pending JP2000353700A (ja) 1999-06-14 1999-06-14 高誘電率薄膜の形成方法および半導体装置の製造方法

Country Status (2)

Country Link
US (2) US6235649B1 (enExample)
JP (1) JP2000353700A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353700A (ja) * 1999-06-14 2000-12-19 Mitsubishi Electric Corp 高誘電率薄膜の形成方法および半導体装置の製造方法
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6501121B1 (en) * 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
TW200401841A (en) * 2002-05-29 2004-02-01 Watanabe M & Co Ltd Vaporizer, various apparatus including the same and method of vaporization
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
JP2005012134A (ja) * 2003-06-20 2005-01-13 Watanabe Shoko:Kk 気化方法及び気化器
KR100496890B1 (ko) * 2003-08-05 2005-06-23 삼성전자주식회사 액체 케미컬 공급 시스템 및 이 장치를 이용한 액체케미컬 유출 절감 방법
JP2009129964A (ja) * 2007-11-20 2009-06-11 Fujitsu Microelectronics Ltd 有機金属原料、成膜装置及び半導体装置の製造方法
US11413556B2 (en) * 2018-11-29 2022-08-16 Tsi Incorporated Reducing or eliminating liquid de-gassing

Family Cites Families (21)

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US4888246A (en) * 1985-05-23 1989-12-19 Matsushita Electric Industrial Co., Ltd. Dielectric thin film, and method for making the thin film
US6110529A (en) * 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
JP2790581B2 (ja) 1992-02-17 1998-08-27 三菱電機株式会社 Ｃｖｄ法による酸化物系誘電体薄膜の製法
JP2799134B2 (ja) 1992-09-22 1998-09-17 三菱電機株式会社 チタン酸バリウムストロンチウム系誘電体薄膜用ｃｖｄ原料およびメモリー用キャパシタ
JP3118493B2 (ja) 1993-04-27 2000-12-18 菱電セミコンダクタシステムエンジニアリング株式会社 液体原料用ｃｖｄ装置
JPH0786807A (ja) * 1993-07-23 1995-03-31 Sony Chem Corp 誘電体フィルタ
JPH0794426A (ja) 1993-09-24 1995-04-07 Ryoden Semiconductor Syst Eng Kk Ｃｖｄ装置
US5538941A (en) * 1994-02-28 1996-07-23 University Of Maryland Superconductor/insulator metal oxide hetero structure for electric field tunable microwave device
US5604375A (en) * 1994-02-28 1997-02-18 Sumitomo Electric Industries, Ltd. Superconducting active lumped component for microwave device application
JP3547471B2 (ja) * 1994-03-09 2004-07-28 富士通株式会社 誘電体膜の気相成長方法
JP3390517B2 (ja) * 1994-03-28 2003-03-24 三菱電機株式会社 液体原料用ｃｖｄ装置
US5527567A (en) * 1994-09-02 1996-06-18 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
CN1075243C (zh) * 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
US5776254A (en) 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
KR100418164B1 (ko) * 1995-07-31 2004-03-19 미쓰비시 마테리알 가부시키가이샤 고순도 티탄착체 및 그의 제조방법과 티탄산 바륨 스트론튬막 형성용 액체조성물
JP3612839B2 (ja) 1996-02-13 2005-01-19 三菱電機株式会社 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置
JPH10251853A (ja) * 1997-03-17 1998-09-22 Mitsubishi Electric Corp 化学気相成長装置
US6277436B1 (en) * 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
US6010744A (en) * 1997-12-23 2000-01-04 Advanced Technology Materials, Inc. Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films
US6312816B1 (en) * 1998-02-20 2001-11-06 Advanced Technology Materials, Inc. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
JP2000353700A (ja) * 1999-06-14 2000-12-19 Mitsubishi Electric Corp 高誘電率薄膜の形成方法および半導体装置の製造方法

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