JP2000345345A - Ｃｖｄ装置およびｃｖｄ装置用気化装置 - Google Patents

Ｃｖｄ装置およびｃｖｄ装置用気化装置

Info

Publication number
JP2000345345A
JP2000345345A JP11157362A JP15736299A JP2000345345A JP 2000345345 A JP2000345345 A JP 2000345345A JP 11157362 A JP11157362 A JP 11157362A JP 15736299 A JP15736299 A JP 15736299A JP 2000345345 A JP2000345345 A JP 2000345345A
Authority
JP
Japan
Prior art keywords
raw material
vaporizer
introduction pipe
film
cvd apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11157362A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000345345A5 (enExample
Inventor
Masayoshi Taruya
政良 多留谷
Takeshi Horikawa
堀川　　剛
Takaaki Kawahara
孝昭 川原
Mikio Yamamukai
幹雄 山向
Shigeru Matsuno
繁 松野
Takehiko Sato
剛彦 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11157362A priority Critical patent/JP2000345345A/ja
Priority to US09/444,556 priority patent/US6470144B1/en
Publication of JP2000345345A publication Critical patent/JP2000345345A/ja
Publication of JP2000345345A5 publication Critical patent/JP2000345345A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP11157362A 1999-06-04 1999-06-04 Ｃｖｄ装置およびｃｖｄ装置用気化装置 Pending JP2000345345A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11157362A JP2000345345A (ja) 1999-06-04 1999-06-04 Ｃｖｄ装置およびｃｖｄ装置用気化装置
US09/444,556 US6470144B1 (en) 1999-06-04 1999-11-19 Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11157362A JP2000345345A (ja) 1999-06-04 1999-06-04 Ｃｖｄ装置およびｃｖｄ装置用気化装置

Publications (2)

Publication Number Publication Date
JP2000345345A true JP2000345345A (ja) 2000-12-12
JP2000345345A5 JP2000345345A5 (enExample) 2006-04-06

Family

ID=15648010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11157362A Pending JP2000345345A (ja) 1999-06-04 1999-06-04 Ｃｖｄ装置およびｃｖｄ装置用気化装置

Country Status (2)

Country Link
US (1) US6470144B1 (enExample)
JP (1) JP2000345345A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003100840A1 (fr) * 2002-05-29 2003-12-04 Kabushiki Kaisha Watanabe Shoko Evaporateur, differents appareils l'incorporant et procede de vaporisation
US7673856B2 (en) 2001-01-18 2010-03-09 Kabushiki Kaisha Watanabe Shoko Vaporizer and various devices using the same and an associated vaporizing method
WO2016117251A1 (ja) * 2015-01-21 2016-07-28 住友電気工業株式会社 結晶成長装置、炭化珪素単結晶の製造方法、炭化珪素単結晶基板および炭化珪素エピタキシャル基板
JP2020130415A (ja) * 2019-02-15 2020-08-31 アコマ医科工業株式会社 麻酔装置

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JP3470055B2 (ja) * 1999-01-22 2003-11-25 株式会社渡邊商行 Ｍｏｃｖｄ用気化器及び原料溶液の気化方法
JP4230596B2 (ja) * 1999-03-12 2009-02-25 東京エレクトロン株式会社 薄膜形成方法
JP4220075B2 (ja) * 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
JP3540234B2 (ja) * 2000-02-14 2004-07-07 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US7163197B2 (en) * 2000-09-26 2007-01-16 Shimadzu Corporation Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method
EP1193493A1 (en) * 2000-09-29 2002-04-03 Infineon Technologies SC300 GmbH & Co. KG Method and apparatus for measuring and controlling the water content of a water containing liquid mixture
DE10057491A1 (de) * 2000-11-20 2002-05-23 Aixtron Ag Vorrichtung und Verfahren zum Zuführen eines in die Gasform gebrachten flüssigen Ausgangsstoffes in einen CVD-Reaktor
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
KR20040078643A (ko) * 2001-12-04 2004-09-10 프라이맥스 인코포레이티드 증기를 증착실에 공급하는 방법 및 화학 증착 기화기
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US6740586B1 (en) * 2002-11-06 2004-05-25 Advanced Technology Materials, Inc. Vapor delivery system for solid precursors and method of using same
US6997403B2 (en) * 2003-01-13 2006-02-14 Micron Technology, Inc. Liquid vaporizer with positive liquid shut-off
JP4202856B2 (ja) * 2003-07-25 2008-12-24 東京エレクトロン株式会社 ガス反応装置
US7261118B2 (en) * 2003-08-19 2007-08-28 Air Products And Chemicals, Inc. Method and vessel for the delivery of precursor materials
US20050147749A1 (en) * 2004-01-05 2005-07-07 Msp Corporation High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition
JP4975414B2 (ja) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
WO2007114474A1 (ja) * 2006-04-05 2007-10-11 Horiba Stec, Co., Ltd. 液体材料気化装置
US8755679B2 (en) 2006-04-05 2014-06-17 Horiba Stec, Co., Ltd. Liquid material vaporizer
US20080241805A1 (en) * 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US9109287B2 (en) * 2006-10-19 2015-08-18 Air Products And Chemicals, Inc. Solid source container with inlet plenum
US11867342B2 (en) 2011-08-11 2024-01-09 Aculon Inc. Fluidic channels and methods of altering the surface energy of components thereof
US20130037161A1 (en) 2011-08-11 2013-02-14 Aculon, Inc. Treating fluidic channels
US12467577B2 (en) 2011-08-11 2025-11-11 Aculon, Inc. Fluidic channels and methods of altering the surface energy of components thereof
KR20200124780A (ko) 2012-05-31 2020-11-03 엔테그리스, 아이엔씨. 배취식 침착을 위한 고 물질 플럭스를 갖는 유체의 소스 시약-기반 수송
JP6436024B2 (ja) * 2015-09-14 2018-12-12 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法
US20220139730A1 (en) * 2019-01-31 2022-05-05 Lam Research Corporation Multi-channel liquid delivery system for advanced semiconductor applications
CN113448172A (zh) * 2020-03-27 2021-09-28 长鑫存储技术有限公司 一种光刻胶涂覆装置及方法

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JPH07268634A (ja) * 1994-03-28 1995-10-17 Mitsubishi Electric Corp 液体原料用ｃｖｄ装置、および液体原料を用いたｃｖｄプロセスと、その液体原料
JPH09143738A (ja) * 1995-11-29 1997-06-03 Fujikura Ltd Ｃｖｄ用液体原料供給装置
JPH108255A (ja) * 1996-06-20 1998-01-13 Ebara Corp 液体原料気化装置
JPH10147870A (ja) * 1996-11-20 1998-06-02 Ebara Corp 液体原料の気化装置
JPH10183352A (ja) * 1996-09-13 1998-07-14 Novellus Syst Inc 蒸発器及び化学蒸着装置
JP2000223481A (ja) * 1999-02-01 2000-08-11 Hitachi Ltd 半導体の製造方法

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GB2129018B (en) * 1982-08-30 1986-01-29 Ricoh Kk Vacuum evaporation apparatus
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
US5370741A (en) * 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5204314A (en) 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
JP3335492B2 (ja) 1994-12-28 2002-10-15 三菱電機株式会社 薄膜の堆積装置
US5776254A (en) * 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
JP3612839B2 (ja) * 1996-02-13 2005-01-19 三菱電機株式会社 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置
US5835677A (en) * 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US6074487A (en) * 1997-02-13 2000-06-13 Shimadzu Corporation Unit for vaporizing liquid materials
JP3645682B2 (ja) * 1997-03-18 2005-05-11 三菱電機株式会社 Ｃｕ成膜用ＣＶＤ装置
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6210485B1 (en) * 1998-07-21 2001-04-03 Applied Materials, Inc. Chemical vapor deposition vaporizer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07268634A (ja) * 1994-03-28 1995-10-17 Mitsubishi Electric Corp 液体原料用ｃｖｄ装置、および液体原料を用いたｃｖｄプロセスと、その液体原料
JPH09143738A (ja) * 1995-11-29 1997-06-03 Fujikura Ltd Ｃｖｄ用液体原料供給装置
JPH108255A (ja) * 1996-06-20 1998-01-13 Ebara Corp 液体原料気化装置
JPH10183352A (ja) * 1996-09-13 1998-07-14 Novellus Syst Inc 蒸発器及び化学蒸着装置
JPH10147870A (ja) * 1996-11-20 1998-06-02 Ebara Corp 液体原料の気化装置
JP2000223481A (ja) * 1999-02-01 2000-08-11 Hitachi Ltd 半導体の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7673856B2 (en) 2001-01-18 2010-03-09 Kabushiki Kaisha Watanabe Shoko Vaporizer and various devices using the same and an associated vaporizing method
WO2003100840A1 (fr) * 2002-05-29 2003-12-04 Kabushiki Kaisha Watanabe Shoko Evaporateur, differents appareils l'incorporant et procede de vaporisation
WO2016117251A1 (ja) * 2015-01-21 2016-07-28 住友電気工業株式会社 結晶成長装置、炭化珪素単結晶の製造方法、炭化珪素単結晶基板および炭化珪素エピタキシャル基板
CN107109694A (zh) * 2015-01-21 2017-08-29 住友电气工业株式会社 晶体生长装置、碳化硅单晶的制造方法、碳化硅单晶基板和碳化硅外延基板
CN107109694B (zh) * 2015-01-21 2020-10-16 住友电气工业株式会社 晶体生长装置、碳化硅单晶的制造方法、碳化硅单晶基板和碳化硅外延基板
JP2020130415A (ja) * 2019-02-15 2020-08-31 アコマ医科工業株式会社 麻酔装置

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