JP2000344599A5 - - Google Patents

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Publication number
JP2000344599A5
JP2000344599A5 JP2000027362A JP2000027362A JP2000344599A5 JP 2000344599 A5 JP2000344599 A5 JP 2000344599A5 JP 2000027362 A JP2000027362 A JP 2000027362A JP 2000027362 A JP2000027362 A JP 2000027362A JP 2000344599 A5 JP2000344599 A5 JP 2000344599A5
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JP
Japan
Prior art keywords
oxide
rare earth
silicon substrate
earth oxide
plane orientation
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JP2000027362A
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English (en)
Japanese (ja)
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JP2000344599A (ja
JP4239343B2 (ja
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Priority to JP2000027362A priority Critical patent/JP4239343B2/ja
Priority claimed from JP2000027362A external-priority patent/JP4239343B2/ja
Publication of JP2000344599A publication Critical patent/JP2000344599A/ja
Publication of JP2000344599A5 publication Critical patent/JP2000344599A5/ja
Application granted granted Critical
Publication of JP4239343B2 publication Critical patent/JP4239343B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2000027362A 1999-03-26 2000-01-31 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法 Expired - Fee Related JP4239343B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000027362A JP4239343B2 (ja) 1999-03-26 2000-01-31 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-84919 1999-03-26
JP8491999 1999-03-26
JP2000027362A JP4239343B2 (ja) 1999-03-26 2000-01-31 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法

Publications (3)

Publication Number Publication Date
JP2000344599A JP2000344599A (ja) 2000-12-12
JP2000344599A5 true JP2000344599A5 (zh) 2006-02-16
JP4239343B2 JP4239343B2 (ja) 2009-03-18

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ID=26425882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000027362A Expired - Fee Related JP4239343B2 (ja) 1999-03-26 2000-01-31 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法

Country Status (1)

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JP (1) JP4239343B2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569240B1 (en) 1999-03-17 2003-05-27 Matsushita Electric Industrial Co., Ltd. Dielectric film and method for forming the same
GB2447683B (en) 2007-03-21 2011-05-04 Advanced Risc Mach Ltd Techniques for generating a trace stream for a data processing apparatus
JP5029539B2 (ja) * 2007-09-04 2012-09-19 三菱マテリアル株式会社 多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法
JP5262068B2 (ja) * 2007-11-01 2013-08-14 富士ゼロックス株式会社 画像形成装置
JP2009224403A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 情報記録素子及びそれを備えた情報記録再生装置
JP2010212391A (ja) * 2009-03-10 2010-09-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置

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