JP2000344599A5 - - Google Patents
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- Publication number
- JP2000344599A5 JP2000344599A5 JP2000027362A JP2000027362A JP2000344599A5 JP 2000344599 A5 JP2000344599 A5 JP 2000344599A5 JP 2000027362 A JP2000027362 A JP 2000027362A JP 2000027362 A JP2000027362 A JP 2000027362A JP 2000344599 A5 JP2000344599 A5 JP 2000344599A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- rare earth
- silicon substrate
- earth oxide
- plane orientation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 26
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000002109 crystal growth method Methods 0.000 description 5
- 239000000539 dimer Substances 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- UPEMFLOMQVFMCZ-UHFFFAOYSA-N [O--].[O--].[O--].[Pm+3].[Pm+3] Chemical compound [O--].[O--].[O--].[Pm+3].[Pm+3] UPEMFLOMQVFMCZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000027362A JP4239343B2 (ja) | 1999-03-26 | 2000-01-31 | 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8491999 | 1999-03-26 | ||
| JP11-84919 | 1999-03-26 | ||
| JP2000027362A JP4239343B2 (ja) | 1999-03-26 | 2000-01-31 | 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000344599A JP2000344599A (ja) | 2000-12-12 |
| JP2000344599A5 true JP2000344599A5 (enrdf_load_stackoverflow) | 2006-02-16 |
| JP4239343B2 JP4239343B2 (ja) | 2009-03-18 |
Family
ID=26425882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000027362A Expired - Fee Related JP4239343B2 (ja) | 1999-03-26 | 2000-01-31 | 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4239343B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6569240B1 (en) | 1999-03-17 | 2003-05-27 | Matsushita Electric Industrial Co., Ltd. | Dielectric film and method for forming the same |
| JP3470068B2 (ja) | 1999-09-01 | 2003-11-25 | 松下電器産業株式会社 | 誘電体膜の形成方法 |
| GB2447683B (en) | 2007-03-21 | 2011-05-04 | Advanced Risc Mach Ltd | Techniques for generating a trace stream for a data processing apparatus |
| JP5029539B2 (ja) * | 2007-09-04 | 2012-09-19 | 三菱マテリアル株式会社 | 多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法 |
| JP5262068B2 (ja) * | 2007-11-01 | 2013-08-14 | 富士ゼロックス株式会社 | 画像形成装置 |
| JP2009224403A (ja) * | 2008-03-13 | 2009-10-01 | Toshiba Corp | 情報記録素子及びそれを備えた情報記録再生装置 |
| JP2010212391A (ja) * | 2009-03-10 | 2010-09-24 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
-
2000
- 2000-01-31 JP JP2000027362A patent/JP4239343B2/ja not_active Expired - Fee Related
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