JP2000311632A5 - - Google Patents

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Publication number
JP2000311632A5
JP2000311632A5 JP1999283439A JP28343999A JP2000311632A5 JP 2000311632 A5 JP2000311632 A5 JP 2000311632A5 JP 1999283439 A JP1999283439 A JP 1999283439A JP 28343999 A JP28343999 A JP 28343999A JP 2000311632 A5 JP2000311632 A5 JP 2000311632A5
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JP
Japan
Prior art keywords
film
electron beam
electron
beam apparatus
emission coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999283439A
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English (en)
Japanese (ja)
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JP2000311632A (ja
JP4115051B2 (ja
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Publication date
Application filed filed Critical
Priority to JP28343999A priority Critical patent/JP4115051B2/ja
Priority claimed from JP28343999A external-priority patent/JP4115051B2/ja
Priority to US09/413,774 priority patent/US6809469B1/en
Publication of JP2000311632A publication Critical patent/JP2000311632A/ja
Priority to US10/777,248 priority patent/US6991507B2/en
Priority to US11/251,771 priority patent/US7309270B2/en
Publication of JP2000311632A5 publication Critical patent/JP2000311632A5/ja
Application granted granted Critical
Publication of JP4115051B2 publication Critical patent/JP4115051B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP28343999A 1998-10-07 1999-10-04 電子線装置 Expired - Fee Related JP4115051B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP28343999A JP4115051B2 (ja) 1998-10-07 1999-10-04 電子線装置
US09/413,774 US6809469B1 (en) 1998-10-07 1999-10-07 Spacer structure having a surface which can reduce secondaries
US10/777,248 US6991507B2 (en) 1998-10-07 2004-02-13 Spacer structure having a surface which can reduce secondaries
US11/251,771 US7309270B2 (en) 1998-10-07 2005-10-18 Electron beam apparatus and spacer

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10-285759 1998-10-07
JP28575998 1998-10-07
JP11-51547 1999-02-26
JP5154799 1999-02-26
JP28343999A JP4115051B2 (ja) 1998-10-07 1999-10-04 電子線装置

Publications (3)

Publication Number Publication Date
JP2000311632A JP2000311632A (ja) 2000-11-07
JP2000311632A5 true JP2000311632A5 (enExample) 2007-12-27
JP4115051B2 JP4115051B2 (ja) 2008-07-09

Family

ID=27294355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28343999A Expired - Fee Related JP4115051B2 (ja) 1998-10-07 1999-10-04 電子線装置

Country Status (2)

Country Link
US (3) US6809469B1 (enExample)
JP (1) JP4115051B2 (enExample)

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KR20070046666A (ko) * 2005-10-31 2007-05-03 삼성에스디아이 주식회사 스페이서 및 이를 구비한 전자 방출 표시 디바이스
KR100649769B1 (ko) * 2005-12-28 2006-11-27 삼성전기주식회사 반도체 발광 다이오드 및 그 제조 방법
JP2007311093A (ja) * 2006-05-17 2007-11-29 Sony Corp 平面型表示装置、並びに、スペーサ
JP2008010399A (ja) * 2006-05-31 2008-01-17 Canon Inc 画像表示装置
US7626324B2 (en) 2006-12-27 2009-12-01 Canon Kabushiki Kaisha Image display apparatus
US7956523B2 (en) * 2007-05-25 2011-06-07 Canon Kabushiki Kaisha Image display apparatus having spacer with carbon film
US7972461B2 (en) * 2007-06-27 2011-07-05 Canon Kabushiki Kaisha Hermetically sealed container and manufacturing method of image forming apparatus using the same
US8020314B2 (en) * 2008-10-31 2011-09-20 Corning Incorporated Methods and apparatus for drying ceramic green bodies with microwaves
JP2011048979A (ja) * 2009-08-26 2011-03-10 Canon Inc 画像表示装置
JP2013254584A (ja) * 2012-06-05 2013-12-19 Hoya Corp 電子増幅用ガラス基板およびその製造方法
CA3002318A1 (en) * 2015-06-24 2016-12-29 University Of Dundee Method of, and apparatus for, reducing photoelectron yield and/or secondary electron yield
GB201603991D0 (en) * 2016-03-08 2016-04-20 Univ Dundee Processing method and apparatus
CN109408885B (zh) * 2018-09-19 2023-05-02 上海电力学院 一种高压直流下绝缘子空间电荷密度模型优化方法
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