JP2000267128A5 - - Google Patents

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Publication number
JP2000267128A5
JP2000267128A5 JP1999071914A JP7191499A JP2000267128A5 JP 2000267128 A5 JP2000267128 A5 JP 2000267128A5 JP 1999071914 A JP1999071914 A JP 1999071914A JP 7191499 A JP7191499 A JP 7191499A JP 2000267128 A5 JP2000267128 A5 JP 2000267128A5
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JP
Japan
Prior art keywords
film
insulating film
transparent conductive
semiconductor device
contact
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JP1999071914A
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English (en)
Japanese (ja)
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JP4454713B2 (ja
JP2000267128A (ja
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Priority to JP7191499A priority Critical patent/JP4454713B2/ja
Priority claimed from JP7191499A external-priority patent/JP4454713B2/ja
Publication of JP2000267128A publication Critical patent/JP2000267128A/ja
Publication of JP2000267128A5 publication Critical patent/JP2000267128A5/ja
Application granted granted Critical
Publication of JP4454713B2 publication Critical patent/JP4454713B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP7191499A 1999-03-17 1999-03-17 半導体装置及びその作製方法 Expired - Fee Related JP4454713B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7191499A JP4454713B2 (ja) 1999-03-17 1999-03-17 半導体装置及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7191499A JP4454713B2 (ja) 1999-03-17 1999-03-17 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2000267128A JP2000267128A (ja) 2000-09-29
JP2000267128A5 true JP2000267128A5 (zh) 2006-05-18
JP4454713B2 JP4454713B2 (ja) 2010-04-21

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JP7191499A Expired - Fee Related JP4454713B2 (ja) 1999-03-17 1999-03-17 半導体装置及びその作製方法

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JP (1) JP4454713B2 (zh)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524974B1 (en) 1999-03-22 2003-02-25 Lsi Logic Corporation Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidizing agent in the presence of one or more reaction retardants
JP3796070B2 (ja) 1999-07-21 2006-07-12 シャープ株式会社 液晶表示装置
US6756674B1 (en) * 1999-10-22 2004-06-29 Lsi Logic Corporation Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same
US6423628B1 (en) 1999-10-22 2002-07-23 Lsi Logic Corporation Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines
US6391795B1 (en) 1999-10-22 2002-05-21 Lsi Logic Corporation Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning
US6346490B1 (en) 2000-04-05 2002-02-12 Lsi Logic Corporation Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps
US6506678B1 (en) 2000-05-19 2003-01-14 Lsi Logic Corporation Integrated circuit structures having low k porous aluminum oxide dielectric material separating aluminum lines, and method of making same
US6365528B1 (en) 2000-06-07 2002-04-02 Lsi Logic Corporation Low temperature process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric-material characterized by improved resistance to oxidation and good gap-filling capabilities
US6346488B1 (en) 2000-06-27 2002-02-12 Lsi Logic Corporation Process to provide enhanced resistance to cracking and to further reduce the dielectric constant of a low dielectric constant dielectric film of an integrated circuit structure by implantation with hydrogen ions
US6492731B1 (en) 2000-06-27 2002-12-10 Lsi Logic Corporation Composite low dielectric constant film for integrated circuit structure
US6368979B1 (en) 2000-06-28 2002-04-09 Lsi Logic Corporation Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure
US6350700B1 (en) 2000-06-28 2002-02-26 Lsi Logic Corporation Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure
US6489242B1 (en) 2000-09-13 2002-12-03 Lsi Logic Corporation Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures
US6391768B1 (en) 2000-10-30 2002-05-21 Lsi Logic Corporation Process for CMP removal of excess trench or via filler metal which inhibits formation of concave regions on oxide surface of integrated circuit structure
US6537923B1 (en) 2000-10-31 2003-03-25 Lsi Logic Corporation Process for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines
US6423630B1 (en) 2000-10-31 2002-07-23 Lsi Logic Corporation Process for forming low K dielectric material between metal lines
US6420277B1 (en) 2000-11-01 2002-07-16 Lsi Logic Corporation Process for inhibiting crack formation in low dielectric constant dielectric films of integrated circuit structure
US6649219B2 (en) 2001-02-23 2003-11-18 Lsi Logic Corporation Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation
US6572925B2 (en) 2001-02-23 2003-06-03 Lsi Logic Corporation Process for forming a low dielectric constant fluorine and carbon containing silicon oxide dielectric material
US6858195B2 (en) 2001-02-23 2005-02-22 Lsi Logic Corporation Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material
US6503840B2 (en) 2001-05-02 2003-01-07 Lsi Logic Corporation Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning
US6559048B1 (en) 2001-05-30 2003-05-06 Lsi Logic Corporation Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning
US6583026B1 (en) 2001-05-31 2003-06-24 Lsi Logic Corporation Process for forming a low k carbon-doped silicon oxide dielectric material on an integrated circuit structure
US6562700B1 (en) 2001-05-31 2003-05-13 Lsi Logic Corporation Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal
US6566171B1 (en) 2001-06-12 2003-05-20 Lsi Logic Corporation Fuse construction for integrated circuit structure having low dielectric constant dielectric material
US6930056B1 (en) 2001-06-19 2005-08-16 Lsi Logic Corporation Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure
KR100807581B1 (ko) * 2001-06-21 2008-02-28 엘지.필립스 엘시디 주식회사 액정 표시장치의 구조 및 그 제조방법
US6559033B1 (en) 2001-06-27 2003-05-06 Lsi Logic Corporation Processing for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines
US6673721B1 (en) 2001-07-02 2004-01-06 Lsi Logic Corporation Process for removal of photoresist mask used for making vias in low k carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask
US6723653B1 (en) 2001-08-17 2004-04-20 Lsi Logic Corporation Process for reducing defects in copper-filled vias and/or trenches formed in porous low-k dielectric material
US6881664B2 (en) 2001-08-28 2005-04-19 Lsi Logic Corporation Process for planarizing upper surface of damascene wiring structure for integrated circuit structures
JP4305811B2 (ja) * 2001-10-15 2009-07-29 株式会社日立製作所 液晶表示装置、画像表示装置およびその製造方法
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
US8305507B2 (en) 2005-02-25 2012-11-06 Samsung Display Co., Ltd. Thin film transistor array panel having improved storage capacitance and manufacturing method thereof
JP2006276118A (ja) * 2005-03-28 2006-10-12 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP5258156B2 (ja) 2005-10-27 2013-08-07 株式会社ジャパンディスプレイ 液晶表示装置およびその製造方法
JP4710576B2 (ja) * 2005-12-05 2011-06-29 日本ビクター株式会社 液晶表示装置及びその製造方法
JP4747911B2 (ja) * 2006-03-30 2011-08-17 ソニー株式会社 液晶パネル用アレイ基板および液晶パネルならびにこれらの製造方法
JP4927430B2 (ja) 2006-04-12 2012-05-09 株式会社 日立ディスプレイズ 液晶表示装置
JP5170985B2 (ja) 2006-06-09 2013-03-27 株式会社ジャパンディスプレイイースト 液晶表示装置
JP5288726B2 (ja) * 2007-05-07 2013-09-11 株式会社ジャパンディスプレイウェスト 液晶表示装置
US7903219B2 (en) 2007-08-16 2011-03-08 Sony Corporation Liquid crystal display device
JP2009122256A (ja) * 2007-11-13 2009-06-04 Seiko Epson Corp 電気光学装置及び電子機器
KR101515382B1 (ko) 2008-08-26 2015-04-27 삼성디스플레이 주식회사 박막 트랜지스터 표시판
JP5182138B2 (ja) * 2009-02-13 2013-04-10 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5407638B2 (ja) * 2009-07-28 2014-02-05 セイコーエプソン株式会社 アクティブマトリクス基板、電気光学装置、及び電子機器
JP2013080040A (ja) * 2011-10-03 2013-05-02 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法、及び電子機器
JP5172023B2 (ja) * 2012-02-01 2013-03-27 株式会社ジャパンディスプレイイースト 液晶表示装置の製造方法
WO2014042187A1 (ja) * 2012-09-14 2014-03-20 シャープ株式会社 アクティブマトリクス基板、表示パネル及び表示装置
KR102071008B1 (ko) * 2013-04-10 2020-01-30 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US10725352B2 (en) 2017-01-27 2020-07-28 Sharp Kabushiki Kaisha Active matrix substrate and display device using same

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