JPH0135351B2 - - Google Patents
Info
- Publication number
- JPH0135351B2 JPH0135351B2 JP54160660A JP16066079A JPH0135351B2 JP H0135351 B2 JPH0135351 B2 JP H0135351B2 JP 54160660 A JP54160660 A JP 54160660A JP 16066079 A JP16066079 A JP 16066079A JP H0135351 B2 JPH0135351 B2 JP H0135351B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- insulating film
- semiconductor layer
- capacitor
- metal reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 229920001721 polyimide Polymers 0.000 claims description 27
- 239000003990 capacitor Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000004642 Polyimide Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 210000002858 crystal cell Anatomy 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16066079A JPS5683781A (en) | 1979-12-10 | 1979-12-10 | Image display unit and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16066079A JPS5683781A (en) | 1979-12-10 | 1979-12-10 | Image display unit and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5683781A JPS5683781A (en) | 1981-07-08 |
| JPH0135351B2 true JPH0135351B2 (zh) | 1989-07-25 |
Family
ID=15719730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16066079A Granted JPS5683781A (en) | 1979-12-10 | 1979-12-10 | Image display unit and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683781A (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5971081A (ja) * | 1982-10-18 | 1984-04-21 | 株式会社東芝 | 液晶表示装置及びその製造方法 |
| JPS61156025A (ja) * | 1984-12-27 | 1986-07-15 | Fujitsu Ltd | 表示装置 |
| JPH01172930A (ja) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | 反射型液晶表示デバイス |
| US5627557A (en) * | 1992-08-20 | 1997-05-06 | Sharp Kabushiki Kaisha | Display apparatus |
| JP2860226B2 (ja) * | 1993-06-07 | 1999-02-24 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
| JP3187254B2 (ja) * | 1994-09-08 | 2001-07-11 | シャープ株式会社 | 画像表示装置 |
| US6613620B2 (en) | 2000-07-31 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP4127466B2 (ja) * | 2000-07-31 | 2008-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
1979
- 1979-12-10 JP JP16066079A patent/JPS5683781A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5683781A (en) | 1981-07-08 |
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