JP2000260689A5 - - Google Patents

Download PDF

Info

Publication number
JP2000260689A5
JP2000260689A5 JP1999060708A JP6070899A JP2000260689A5 JP 2000260689 A5 JP2000260689 A5 JP 2000260689A5 JP 1999060708 A JP1999060708 A JP 1999060708A JP 6070899 A JP6070899 A JP 6070899A JP 2000260689 A5 JP2000260689 A5 JP 2000260689A5
Authority
JP
Japan
Prior art keywords
magnification
linear error
pattern
exposure
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999060708A
Other languages
English (en)
Japanese (ja)
Other versions
JP3929635B2 (ja
JP2000260689A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP06070899A priority Critical patent/JP3929635B2/ja
Priority claimed from JP06070899A external-priority patent/JP3929635B2/ja
Priority to US09/520,630 priority patent/US6542237B1/en
Publication of JP2000260689A publication Critical patent/JP2000260689A/ja
Publication of JP2000260689A5 publication Critical patent/JP2000260689A5/ja
Application granted granted Critical
Publication of JP3929635B2 publication Critical patent/JP3929635B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

JP06070899A 1999-03-08 1999-03-08 露光方法 Expired - Fee Related JP3929635B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP06070899A JP3929635B2 (ja) 1999-03-08 1999-03-08 露光方法
US09/520,630 US6542237B1 (en) 1999-03-08 2000-03-07 Exposure method for making precision patterns on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06070899A JP3929635B2 (ja) 1999-03-08 1999-03-08 露光方法

Publications (3)

Publication Number Publication Date
JP2000260689A JP2000260689A (ja) 2000-09-22
JP2000260689A5 true JP2000260689A5 (enExample) 2005-06-30
JP3929635B2 JP3929635B2 (ja) 2007-06-13

Family

ID=13150070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06070899A Expired - Fee Related JP3929635B2 (ja) 1999-03-08 1999-03-08 露光方法

Country Status (2)

Country Link
US (1) US6542237B1 (enExample)
JP (1) JP3929635B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002224604A (ja) * 2001-01-31 2002-08-13 Hitachi Ltd パターン転写装置,パターン転写方法および転写用原版の製造方法
US7171637B2 (en) * 2005-01-14 2007-01-30 Intel Corporation Translation generation for a mask pattern
JP2017090817A (ja) * 2015-11-16 2017-05-25 キヤノン株式会社 露光装置、及び物品の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918320A (en) 1987-03-20 1990-04-17 Canon Kabushiki Kaisha Alignment method usable in a step-and-repeat type exposure apparatus for either global or dye-by-dye alignment
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5798195A (en) * 1993-09-24 1998-08-25 Nikon Corporation Stepping accuracy measuring method
KR100377887B1 (ko) * 1994-02-10 2003-06-18 가부시키가이샤 니콘 정렬방법
JPH07260472A (ja) * 1994-03-22 1995-10-13 Nikon Corp ステージ装置の直交度測定方法
JPH0845814A (ja) * 1994-07-27 1996-02-16 Nikon Corp 露光装置および位置決め方法
JP3261948B2 (ja) * 1995-03-28 2002-03-04 キヤノン株式会社 X線露光用マスク及びそれを用いた半導体素子の製造方法
KR100471461B1 (ko) * 1996-05-16 2005-07-07 가부시키가이샤 니콘 노광방법및노광장치
WO2000019497A1 (en) * 1998-09-30 2000-04-06 Nikon Corporation Alignment method and method for producing device using the alignment method
JP3751762B2 (ja) * 1998-12-08 2006-03-01 株式会社東芝 半導体装置の製造方法および原板
JP3831138B2 (ja) * 1999-01-28 2006-10-11 株式会社東芝 パターン形成方法

Similar Documents

Publication Publication Date Title
CN107799451A (zh) 半导体加工中控制曲度以控制叠对的位置特定的应力调节
US5986766A (en) Alignment method and alignment system
JP2015043452A (ja) 応力ならびにオーバーレイのフィードフォーワード、及び/または、フィードバック・リソグラフィック・プロセス制御
CN106547171A (zh) 一种用于光刻装置的套刻补偿系统及方法
TWI685726B (zh) 用於控制基板之定位之方法及用於判定參照基板之特徵之位置的方法
US5731113A (en) Method of reducing registration error in exposure step of semiconductor device
JP3595707B2 (ja) 露光装置および露光方法
JPH07335524A (ja) 位置合わせ方法
JP5134625B2 (ja) Apc制御ストラテジーにより露光フィールド内のオーバーレイ誤差を小さくする方法およびシステム
JP2000133579A5 (enExample)
JP2010502024A5 (enExample)
US6557163B1 (en) Method of photolithographic critical dimension control by using reticle measurements in a control algorithm
WO2018010928A1 (en) Method and apparatus for determining a fingerprint of a performance parameter
US20200081353A1 (en) Device manufacturing method
JPH09166416A (ja) レチクルパターンの相対的位置ずれ量計測方法およびレチクルパターンの相対的位置ずれ量計測装置
JP2000260689A5 (enExample)
JP3445102B2 (ja) 露光装置およびデバイス製造方法
JP2000275010A (ja) 位置計測方法および該位置計測法を用いた半導体露光装置
JP3168590B2 (ja) 縮小投影露光方法
JP7703055B2 (ja) 改善されたオーバーレイ誤差計測のための誘起変位
JP4158418B2 (ja) レジストパターン幅寸法の調整方法
JPH09330862A5 (enExample)
JP2876406B2 (ja) 露光装置及び露光方法
JP2698217B2 (ja) 半導体ウエハの位置合わせ方法
TW202520007A (zh) 判定微影設備上之退化的方法