JP2000208614A5 - - Google Patents
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- Publication number
- JP2000208614A5 JP2000208614A5 JP1999007759A JP775999A JP2000208614A5 JP 2000208614 A5 JP2000208614 A5 JP 2000208614A5 JP 1999007759 A JP1999007759 A JP 1999007759A JP 775999 A JP775999 A JP 775999A JP 2000208614 A5 JP2000208614 A5 JP 2000208614A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- soi substrate
- semiconductor device
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 50
- 239000004065 semiconductor Substances 0.000 description 48
- 238000004519 manufacturing process Methods 0.000 description 35
- 238000000034 method Methods 0.000 description 34
- 238000000926 separation method Methods 0.000 description 31
- 238000005530 etching Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 13
- 238000001039 wet etching Methods 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11007759A JP2000208614A (ja) | 1999-01-14 | 1999-01-14 | 半導体装置の製造方法及び半導体装置 |
| US09/325,644 US6436792B1 (en) | 1999-01-14 | 1999-06-04 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11007759A JP2000208614A (ja) | 1999-01-14 | 1999-01-14 | 半導体装置の製造方法及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000208614A JP2000208614A (ja) | 2000-07-28 |
| JP2000208614A5 true JP2000208614A5 (OSRAM) | 2006-04-06 |
Family
ID=11674630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11007759A Pending JP2000208614A (ja) | 1999-01-14 | 1999-01-14 | 半導体装置の製造方法及び半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6436792B1 (OSRAM) |
| JP (1) | JP2000208614A (OSRAM) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8405147B2 (en) | 2005-07-11 | 2013-03-26 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
| US8669804B2 (en) | 2008-02-28 | 2014-03-11 | Peregrine Semiconductor Corporation | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals |
| US8954902B2 (en) | 2005-07-11 | 2015-02-10 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US9225378B2 (en) | 2001-10-10 | 2015-12-29 | Peregrine Semiconductor Corpopration | Switch circuit and method of switching radio frequency signals |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4659826B2 (ja) | 2004-06-23 | 2011-03-30 | ペレグリン セミコンダクター コーポレーション | Ｒｆフロントエンド集積回路 |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7411245B2 (en) * | 2005-11-30 | 2008-08-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacer barrier structure to prevent spacer voids and method for forming the same |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US20150236798A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Methods for Increasing RF Throughput Via Usage of Tunable Filters |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| JP6763703B2 (ja) * | 2016-06-17 | 2020-09-30 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2507567B2 (ja) * | 1988-11-25 | 1996-06-12 | 三菱電機株式会社 | 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ |
| JP2547663B2 (ja) * | 1990-10-03 | 1996-10-23 | 三菱電機株式会社 | 半導体装置 |
| US6171931B1 (en) * | 1994-12-15 | 2001-01-09 | Sgs-Thomson Microelectronics S.R.L. | Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication |
| JPH1022462A (ja) * | 1996-06-28 | 1998-01-23 | Sharp Corp | 半導体装置及びその製造方法 |
| KR100218668B1 (ko) * | 1996-12-14 | 1999-09-01 | 권혁준 | 바이폴라 소자의 컬랙터 장치 및 그 제조방법 |
| US5973358A (en) * | 1997-07-01 | 1999-10-26 | Citizen Watch Co., Ltd. | SOI device having a channel with variable thickness |
| KR100253406B1 (ko) * | 1998-01-20 | 2000-04-15 | 김영환 | 반도체 파워 집적회로에서의 소자격리구조 및 그 방법 |
-
1999
- 1999-01-14 JP JP11007759A patent/JP2000208614A/ja active Pending
- 1999-06-04 US US09/325,644 patent/US6436792B1/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9225378B2 (en) | 2001-10-10 | 2015-12-29 | Peregrine Semiconductor Corpopration | Switch circuit and method of switching radio frequency signals |
| US8405147B2 (en) | 2005-07-11 | 2013-03-26 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
| US8954902B2 (en) | 2005-07-11 | 2015-02-10 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US8669804B2 (en) | 2008-02-28 | 2014-03-11 | Peregrine Semiconductor Corporation | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
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