JP2000208614A - 半導体装置の製造方法及び半導体装置 - Google Patents

半導体装置の製造方法及び半導体装置

Info

Publication number
JP2000208614A
JP2000208614A JP11007759A JP775999A JP2000208614A JP 2000208614 A JP2000208614 A JP 2000208614A JP 11007759 A JP11007759 A JP 11007759A JP 775999 A JP775999 A JP 775999A JP 2000208614 A JP2000208614 A JP 2000208614A
Authority
JP
Japan
Prior art keywords
film
insulating film
forming
semiconductor device
soi substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11007759A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000208614A5 (enExample
Inventor
Yasuo Yamaguchi
泰男 山口
Shigenobu Maeda
茂伸 前田
Yuichi Hirano
有一 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11007759A priority Critical patent/JP2000208614A/ja
Priority to US09/325,644 priority patent/US6436792B1/en
Publication of JP2000208614A publication Critical patent/JP2000208614A/ja
Publication of JP2000208614A5 publication Critical patent/JP2000208614A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76291—Lateral isolation by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
JP11007759A 1999-01-14 1999-01-14 半導体装置の製造方法及び半導体装置 Pending JP2000208614A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11007759A JP2000208614A (ja) 1999-01-14 1999-01-14 半導体装置の製造方法及び半導体装置
US09/325,644 US6436792B1 (en) 1999-01-14 1999-06-04 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11007759A JP2000208614A (ja) 1999-01-14 1999-01-14 半導体装置の製造方法及び半導体装置

Publications (2)

Publication Number Publication Date
JP2000208614A true JP2000208614A (ja) 2000-07-28
JP2000208614A5 JP2000208614A5 (enExample) 2006-04-06

Family

ID=11674630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11007759A Pending JP2000208614A (ja) 1999-01-14 1999-01-14 半導体装置の製造方法及び半導体装置

Country Status (2)

Country Link
US (1) US6436792B1 (enExample)
JP (1) JP2000208614A (enExample)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8536636B2 (en) 2007-04-26 2013-09-17 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US8559907B2 (en) 2004-06-23 2013-10-15 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US8583111B2 (en) 2001-10-10 2013-11-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US8604864B2 (en) 2008-02-28 2013-12-10 Peregrine Semiconductor Corporation Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9130564B2 (en) 2005-07-11 2015-09-08 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9419565B2 (en) 2013-03-14 2016-08-16 Peregrine Semiconductor Corporation Hot carrier injection compensation
US9608619B2 (en) 2005-07-11 2017-03-28 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
JP2017224794A (ja) * 2016-06-17 2017-12-21 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10790390B2 (en) 2005-07-11 2020-09-29 Psemi Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US10804892B2 (en) 2005-07-11 2020-10-13 Psemi Corporation Circuit and method for controlling charge injection in radio frequency switches
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411245B2 (en) * 2005-11-30 2008-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Spacer barrier structure to prevent spacer voids and method for forming the same
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2507567B2 (ja) * 1988-11-25 1996-06-12 三菱電機株式会社 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ
JP2547663B2 (ja) * 1990-10-03 1996-10-23 三菱電機株式会社 半導体装置
US6171931B1 (en) * 1994-12-15 2001-01-09 Sgs-Thomson Microelectronics S.R.L. Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
JPH1022462A (ja) * 1996-06-28 1998-01-23 Sharp Corp 半導体装置及びその製造方法
KR100218668B1 (ko) * 1996-12-14 1999-09-01 권혁준 바이폴라 소자의 컬랙터 장치 및 그 제조방법
US5973358A (en) * 1997-07-01 1999-10-26 Citizen Watch Co., Ltd. SOI device having a channel with variable thickness
KR100253406B1 (ko) * 1998-01-20 2000-04-15 김영환 반도체 파워 집적회로에서의 소자격리구조 및 그 방법

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10812068B2 (en) 2001-10-10 2020-10-20 Psemi Corporation Switch circuit and method of switching radio frequency signals
US8583111B2 (en) 2001-10-10 2013-11-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US10622993B2 (en) 2001-10-10 2020-04-14 Psemi Corporation Switch circuit and method of switching radio frequency signals
US10790820B2 (en) 2001-10-10 2020-09-29 Psemi Corporation Switch circuit and method of switching radio frequency signals
US10797694B2 (en) 2001-10-10 2020-10-06 Psemi Corporation Switch circuit and method of switching radio frequency signals
US8559907B2 (en) 2004-06-23 2013-10-15 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US8649754B2 (en) 2004-06-23 2014-02-11 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US9680416B2 (en) 2004-06-23 2017-06-13 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US9369087B2 (en) 2004-06-23 2016-06-14 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US9130564B2 (en) 2005-07-11 2015-09-08 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US10622990B2 (en) 2005-07-11 2020-04-14 Psemi Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US10804892B2 (en) 2005-07-11 2020-10-13 Psemi Corporation Circuit and method for controlling charge injection in radio frequency switches
US9087899B2 (en) 2005-07-11 2015-07-21 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US10797691B1 (en) 2005-07-11 2020-10-06 Psemi Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US10818796B2 (en) 2005-07-11 2020-10-27 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US10797172B2 (en) 2005-07-11 2020-10-06 Psemi Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9608619B2 (en) 2005-07-11 2017-03-28 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
USRE48944E1 (en) 2005-07-11 2022-02-22 Psemi Corporation Method and apparatus for use in improving linearity of MOSFETS using an accumulated charge sink
US10790390B2 (en) 2005-07-11 2020-09-29 Psemi Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US10680600B2 (en) 2005-07-11 2020-06-09 Psemi Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9177737B2 (en) 2007-04-26 2015-11-03 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US10951210B2 (en) 2007-04-26 2021-03-16 Psemi Corporation Tuning capacitance to enhance FET stack voltage withstand
US8536636B2 (en) 2007-04-26 2013-09-17 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US9197194B2 (en) 2008-02-28 2015-11-24 Peregrine Semiconductor Corporation Methods and apparatuses for use in tuning reactance in a circuit device
US8604864B2 (en) 2008-02-28 2013-12-10 Peregrine Semiconductor Corporation Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US9024700B2 (en) 2008-02-28 2015-05-05 Peregrine Semiconductor Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US9106227B2 (en) 2008-02-28 2015-08-11 Peregrine Semiconductor Corporation Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US9293262B2 (en) 2008-02-28 2016-03-22 Peregrine Semiconductor Corporation Digitally tuned capacitors with tapered and reconfigurable quality factors
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US9419565B2 (en) 2013-03-14 2016-08-16 Peregrine Semiconductor Corporation Hot carrier injection compensation
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
JP2017224794A (ja) * 2016-06-17 2017-12-21 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US11018662B2 (en) 2018-03-28 2021-05-25 Psemi Corporation AC coupling modules for bias ladders
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10862473B2 (en) 2018-03-28 2020-12-08 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US11418183B2 (en) 2018-03-28 2022-08-16 Psemi Corporation AC coupling modules for bias ladders
US11870431B2 (en) 2018-03-28 2024-01-09 Psemi Corporation AC coupling modules for bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
US12081211B2 (en) 2020-01-06 2024-09-03 Psemi Corporation High power positive logic switch

Also Published As

Publication number Publication date
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