JP2000195278A - 不揮発性強誘電体メモリ装置 - Google Patents

不揮発性強誘電体メモリ装置

Info

Publication number
JP2000195278A
JP2000195278A JP11364055A JP36405599A JP2000195278A JP 2000195278 A JP2000195278 A JP 2000195278A JP 11364055 A JP11364055 A JP 11364055A JP 36405599 A JP36405599 A JP 36405599A JP 2000195278 A JP2000195278 A JP 2000195278A
Authority
JP
Japan
Prior art keywords
bit line
nmos transistor
transistor
main
global bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11364055A
Other languages
English (en)
Japanese (ja)
Inventor
Kifuku Kyo
煕 福 姜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of JP2000195278A publication Critical patent/JP2000195278A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2257—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
JP11364055A 1998-12-29 1999-12-22 不揮発性強誘電体メモリ装置 Pending JP2000195278A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019980060408A KR100281125B1 (ko) 1998-12-29 1998-12-29 비휘발성 강유전체 메모리장치
KR60408/1998 1998-12-29

Publications (1)

Publication Number Publication Date
JP2000195278A true JP2000195278A (ja) 2000-07-14

Family

ID=19567225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11364055A Pending JP2000195278A (ja) 1998-12-29 1999-12-22 不揮発性強誘電体メモリ装置

Country Status (3)

Country Link
JP (1) JP2000195278A (ko)
KR (1) KR100281125B1 (ko)
DE (1) DE19963417B4 (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003162894A (ja) * 2001-09-17 2003-06-06 Hynix Semiconductor Inc 強誘電体メモリ及びその駆動方法
JP2004185790A (ja) * 2002-12-02 2004-07-02 Hynix Semiconductor Inc 拡張メモリ部を備えた強誘電体メモリ装置
JP2004192778A (ja) * 2002-12-09 2004-07-08 Hynix Semiconductor Inc 不揮発性強誘電体メモリ装置
US6845031B2 (en) * 2002-01-26 2005-01-18 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device and method for driving the same
US7212430B2 (en) 2005-01-06 2007-05-01 Fujitsu Limited Semiconductor memory

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100301822B1 (ko) * 1999-07-21 2001-11-01 김영환 불휘발성 강유전체 메모리 장치의 센싱앰프
KR100459214B1 (ko) * 2001-12-05 2004-12-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리장치 및 그의 메인 비트라인로드 컨트롤부의 구동방법
KR100487417B1 (ko) * 2001-12-13 2005-05-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그를 이용한멀티플-비트 데이타의 라이트 및 리드 방법
US6809949B2 (en) 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
KR100487920B1 (ko) * 2002-09-06 2005-05-06 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
KR100657148B1 (ko) * 2005-03-18 2006-12-13 매그나칩 반도체 유한회사 플래시 메모리 및 그 레퍼런스 셀 제어 방법
KR100745602B1 (ko) 2005-12-09 2007-08-02 삼성전자주식회사 상 변화 메모리 장치 및 그것의 메모리 셀 어레이
KR100895389B1 (ko) * 2007-09-06 2009-04-30 주식회사 하이닉스반도체 상 변화 메모리 장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4433390A (en) * 1981-07-30 1984-02-21 The Bendix Corporation Power processing reset system for a microprocessor responding to sudden deregulation of a voltage
JPS59116685A (ja) * 1982-12-23 1984-07-05 セイコーインスツルメンツ株式会社 画像表示装置
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
US5297007A (en) * 1990-09-19 1994-03-22 Rockwell International Corporation E/M shielded RF circuit board
US5371699A (en) * 1992-11-17 1994-12-06 Ramtron International Corporation Non-volatile ferroelectric memory with folded bit lines and method of making the same
JP3397427B2 (ja) * 1994-02-02 2003-04-14 株式会社東芝 半導体記憶装置
US5701269A (en) * 1994-11-28 1997-12-23 Fujitsu Limited Semiconductor memory with hierarchical bit lines
US5680344A (en) * 1995-09-11 1997-10-21 Micron Technology, Inc. Circuit and method of operating a ferrolectric memory in a DRAM mode
US5638318A (en) * 1995-09-11 1997-06-10 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
US5737260A (en) * 1996-03-27 1998-04-07 Sharp Kabushiki Kaisha Dual mode ferroelectric memory reference scheme
JPH09331032A (ja) * 1996-06-11 1997-12-22 Toshiba Corp 半導体記憶装置
JPH1040682A (ja) * 1996-07-23 1998-02-13 Mitsubishi Electric Corp 半導体記憶装置
US5680357A (en) * 1996-09-09 1997-10-21 Hewlett Packard Company High speed, low noise, low power, electronic memory sensing scheme
JPH10134596A (ja) * 1996-10-30 1998-05-22 Sony Corp 半導体記憶装置
JP3602939B2 (ja) * 1996-11-19 2004-12-15 松下電器産業株式会社 半導体記憶装置
KR100242998B1 (ko) * 1996-12-30 2000-02-01 김영환 잡음특성을 개선한 셀 어레이 및 센스앰프의 구조
JP3604524B2 (ja) * 1997-01-07 2004-12-22 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ
US5872739A (en) * 1997-04-17 1999-02-16 Radiant Technologies Sense amplifier for low read-voltage memory cells
KR100261174B1 (ko) * 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법
KR100287882B1 (ko) * 1998-11-03 2001-05-02 김영환 비휘발성 강유전체 메모리장치

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003162894A (ja) * 2001-09-17 2003-06-06 Hynix Semiconductor Inc 強誘電体メモリ及びその駆動方法
US6845031B2 (en) * 2002-01-26 2005-01-18 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device and method for driving the same
JP2004185790A (ja) * 2002-12-02 2004-07-02 Hynix Semiconductor Inc 拡張メモリ部を備えた強誘電体メモリ装置
JP4624655B2 (ja) * 2002-12-02 2011-02-02 株式会社ハイニックスセミコンダクター 拡張メモリ部を備えた強誘電体メモリ装置
JP2004192778A (ja) * 2002-12-09 2004-07-08 Hynix Semiconductor Inc 不揮発性強誘電体メモリ装置
JP2010044854A (ja) * 2002-12-09 2010-02-25 Hynix Semiconductor Inc 不揮発性強誘電体メモリ装置
US7212430B2 (en) 2005-01-06 2007-05-01 Fujitsu Limited Semiconductor memory

Also Published As

Publication number Publication date
KR100281125B1 (ko) 2001-03-02
DE19963417B4 (de) 2007-02-15
DE19963417A1 (de) 2000-07-20
KR20000043969A (ko) 2000-07-15

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