JP2000173266A - 昇圧回路 - Google Patents

昇圧回路

Info

Publication number
JP2000173266A
JP2000173266A JP10347007A JP34700798A JP2000173266A JP 2000173266 A JP2000173266 A JP 2000173266A JP 10347007 A JP10347007 A JP 10347007A JP 34700798 A JP34700798 A JP 34700798A JP 2000173266 A JP2000173266 A JP 2000173266A
Authority
JP
Japan
Prior art keywords
channel mos
mos transistor
node
voltage
boosting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10347007A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000173266A5 (https=
Inventor
Gen Morishita
玄 森下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10347007A priority Critical patent/JP2000173266A/ja
Priority to US09/324,802 priority patent/US6154411A/en
Publication of JP2000173266A publication Critical patent/JP2000173266A/ja
Publication of JP2000173266A5 publication Critical patent/JP2000173266A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
JP10347007A 1998-12-07 1998-12-07 昇圧回路 Pending JP2000173266A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10347007A JP2000173266A (ja) 1998-12-07 1998-12-07 昇圧回路
US09/324,802 US6154411A (en) 1998-12-07 1999-06-03 Boosting circuit compensating for voltage fluctuation due to operation of load

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10347007A JP2000173266A (ja) 1998-12-07 1998-12-07 昇圧回路

Publications (2)

Publication Number Publication Date
JP2000173266A true JP2000173266A (ja) 2000-06-23
JP2000173266A5 JP2000173266A5 (https=) 2006-01-19

Family

ID=18387296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10347007A Pending JP2000173266A (ja) 1998-12-07 1998-12-07 昇圧回路

Country Status (2)

Country Link
US (1) US6154411A (https=)
JP (1) JP2000173266A (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831500B2 (en) 2002-10-25 2004-12-14 Elpida Memory, Inc. Noise-reduced voltage boosting circuit
KR100465248B1 (ko) * 2000-08-14 2005-01-13 미쓰비시 덴끼 엔지니어링 가부시키가이샤 기판 바이어스 전압 발생 회로
US6885225B2 (en) 2002-02-18 2005-04-26 Renesas Technology Corp. Drive circuit
US7253676B2 (en) 2003-12-25 2007-08-07 Kabushiki Kaisha Toshiba Semiconductor device and driving method of semiconductor device
JP2010057230A (ja) * 2008-08-27 2010-03-11 Nec Electronics Corp 電圧生成回路及びその動作制御方法
JP2010226772A (ja) * 2009-03-19 2010-10-07 Denso Corp 電源装置
JP2011071791A (ja) * 2009-09-28 2011-04-07 Toppan Printing Co Ltd チャージポンプ回路
US7956675B2 (en) 2008-09-08 2011-06-07 Rohm Co., Ltd. Control circuit and control method for charge pump circuit
KR101161742B1 (ko) 2010-07-30 2012-07-02 에스케이하이닉스 주식회사 반도체 장치 및 그 동작 방법
JP2013009551A (ja) * 2011-06-27 2013-01-10 Fujitsu Semiconductor Ltd 電源装置

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999062059A1 (en) * 1998-05-22 1999-12-02 Seagate Technology Llc Adaptive low-noise current generator and method
US6781439B2 (en) * 1998-07-30 2004-08-24 Kabushiki Kaisha Toshiba Memory device pump circuit with two booster circuits
JP3430050B2 (ja) * 1998-12-28 2003-07-28 日本電気株式会社 半導体記憶装置およびその駆動方法
US6377502B1 (en) * 1999-05-10 2002-04-23 Kabushiki Kaisha Toshiba Semiconductor device that enables simultaneous read and write/erase operation
KR100351931B1 (ko) * 2000-05-30 2002-09-12 삼성전자 주식회사 반도체 메모리 장치의 전압 감지 회로
US6300839B1 (en) * 2000-08-22 2001-10-09 Xilinx, Inc. Frequency controlled system for positive voltage regulation
JP2002091604A (ja) * 2000-09-19 2002-03-29 Mitsubishi Electric Corp クロック発生回路
KR100374644B1 (ko) * 2001-01-27 2003-03-03 삼성전자주식회사 승압 전압의 조절이 가능한 전압 승압 회로
EP1229548B1 (en) * 2001-02-06 2008-05-21 STMicroelectronics S.r.l. Charge pump for a nonvolatile memory with read voltage regulation in the presence of address skew, and nonvolatile memory comprising such a charge pump
JP2003022686A (ja) * 2001-07-09 2003-01-24 Mitsubishi Electric Corp 半導体集積回路装置
US6486727B1 (en) 2001-10-11 2002-11-26 Pericom Semiconductor Corp. Low-power substrate bias generator disabled by comparators for supply over-voltage protection and bias target voltage
KR100543318B1 (ko) * 2002-10-07 2006-01-20 주식회사 하이닉스반도체 부스팅 전압 제어회로
US6992517B2 (en) * 2003-08-11 2006-01-31 Atmel Corporation Self-limiting pulse width modulation regulator
JP4492935B2 (ja) * 2004-03-08 2010-06-30 ルネサスエレクトロニクス株式会社 昇圧回路および昇圧回路を備えた半導体装置
KR100680441B1 (ko) * 2005-06-07 2007-02-08 주식회사 하이닉스반도체 안정적인 승압 전압을 발생하는 승압 전압 발생기
US7224207B2 (en) * 2005-09-20 2007-05-29 Taiwan Semiconductor Manufacturing Co. Charge pump system with smooth voltage output
KR100721899B1 (ko) 2006-01-11 2007-05-28 삼성전자주식회사 승압 전압 발생회로 및 승압 전압 발생방법
US7443230B2 (en) * 2006-08-10 2008-10-28 Elite Semiconductor Memory Technology Inc. Charge pump circuit
KR100809071B1 (ko) * 2006-09-25 2008-03-03 삼성전자주식회사 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법
KR100809072B1 (ko) * 2006-09-28 2008-03-03 삼성전자주식회사 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법
KR101034613B1 (ko) * 2009-06-05 2011-05-12 주식회사 하이닉스반도체 내부전압발생회로
US8013666B1 (en) * 2009-07-31 2011-09-06 Altera Corporation Low ripple charge pump
JP2011175710A (ja) * 2010-02-24 2011-09-08 Toshiba Corp 半導体記憶装置
TWI481163B (zh) * 2012-02-24 2015-04-11 Novatek Microelectronics Corp 充電幫浦裝置及其驅動能力調整方法
US9337724B2 (en) * 2013-11-19 2016-05-10 Globalfoundries Inc. Load sensing voltage charge pump system
US20180315458A1 (en) * 2017-04-28 2018-11-01 Nanya Technology Corporation Voltage system and method for operating the same
US10250132B2 (en) * 2017-06-09 2019-04-02 Nanya Technology Corporation Voltage system and operating method thereof
CN110739849A (zh) * 2019-10-17 2020-01-31 合肥联宝信息技术有限公司 一种供电电路及电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02121188A (ja) * 1988-10-28 1990-05-09 Matsushita Electric Ind Co Ltd 基板バイアス発生回路
JP3107556B2 (ja) * 1990-06-01 2000-11-13 株式会社東芝 ダイナミック型半導体記憶装置
KR960000837B1 (ko) * 1992-12-02 1996-01-13 삼성전자주식회사 반도체 메모리장치
JP2917914B2 (ja) * 1996-05-17 1999-07-12 日本電気株式会社 昇圧回路

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100465248B1 (ko) * 2000-08-14 2005-01-13 미쓰비시 덴끼 엔지니어링 가부시키가이샤 기판 바이어스 전압 발생 회로
US6885225B2 (en) 2002-02-18 2005-04-26 Renesas Technology Corp. Drive circuit
US6831500B2 (en) 2002-10-25 2004-12-14 Elpida Memory, Inc. Noise-reduced voltage boosting circuit
US7253676B2 (en) 2003-12-25 2007-08-07 Kabushiki Kaisha Toshiba Semiconductor device and driving method of semiconductor device
JP2010057230A (ja) * 2008-08-27 2010-03-11 Nec Electronics Corp 電圧生成回路及びその動作制御方法
US7956675B2 (en) 2008-09-08 2011-06-07 Rohm Co., Ltd. Control circuit and control method for charge pump circuit
JP2010226772A (ja) * 2009-03-19 2010-10-07 Denso Corp 電源装置
JP2011071791A (ja) * 2009-09-28 2011-04-07 Toppan Printing Co Ltd チャージポンプ回路
KR101161742B1 (ko) 2010-07-30 2012-07-02 에스케이하이닉스 주식회사 반도체 장치 및 그 동작 방법
US8330533B2 (en) 2010-07-30 2012-12-11 Hynix Semiconductor Inc. Semiconductor device and operating method thereof
JP2013009551A (ja) * 2011-06-27 2013-01-10 Fujitsu Semiconductor Ltd 電源装置

Also Published As

Publication number Publication date
US6154411A (en) 2000-11-28

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