JP2000101022A5 - - Google Patents

Download PDF

Info

Publication number
JP2000101022A5
JP2000101022A5 JP1998267118A JP26711898A JP2000101022A5 JP 2000101022 A5 JP2000101022 A5 JP 2000101022A5 JP 1998267118 A JP1998267118 A JP 1998267118A JP 26711898 A JP26711898 A JP 26711898A JP 2000101022 A5 JP2000101022 A5 JP 2000101022A5
Authority
JP
Japan
Prior art keywords
circuit device
capacitive element
integrated circuit
semiconductor integrated
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998267118A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000101022A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10267118A priority Critical patent/JP2000101022A/ja
Priority claimed from JP10267118A external-priority patent/JP2000101022A/ja
Publication of JP2000101022A publication Critical patent/JP2000101022A/ja
Publication of JP2000101022A5 publication Critical patent/JP2000101022A5/ja
Withdrawn legal-status Critical Current

Links

JP10267118A 1998-09-21 1998-09-21 半導体集積回路装置 Withdrawn JP2000101022A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10267118A JP2000101022A (ja) 1998-09-21 1998-09-21 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10267118A JP2000101022A (ja) 1998-09-21 1998-09-21 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2000101022A JP2000101022A (ja) 2000-04-07
JP2000101022A5 true JP2000101022A5 (enExample) 2004-09-24

Family

ID=17440328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10267118A Withdrawn JP2000101022A (ja) 1998-09-21 1998-09-21 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JP2000101022A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100583437C (zh) * 2005-03-02 2010-01-20 Nxp股份有限公司 电子器件及其使用

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5008872B2 (ja) * 2005-02-02 2012-08-22 株式会社リコー 半導体集積装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100583437C (zh) * 2005-03-02 2010-01-20 Nxp股份有限公司 电子器件及其使用

Similar Documents

Publication Publication Date Title
SE9703295D0 (sv) Electrical devices and a method of manufacturing the same
KR930017082A (ko) 첩합층을 가진 반도체디바이스와 그 제조방법
JP2001094112A5 (ja) 半導体装置
KR970067837A (ko) 인텔리전트 파워 장치
EP1083607A3 (en) High voltage SOI semiconductor device
EP1722418A3 (en) Semiconductor memory device
JPS63182848A (ja) 集積回路
WO2003049194A1 (fr) Ligne fonctionnelle et reseau de transistor utilisant celle-ci
KR970018562A (ko) 감결합 커패시터를 포함하는 반도체 장치 및 그 제조방법
KR960019497A (ko) Soi 구조를 가지는 반도체장치 및 그의 제조방법
KR900013652A (ko) 감소된 온 저항을 가진 soi구조의 고전압 반도체 장치
JP2002151665A5 (ja) 半導体集積回路装置
KR980006266A (ko) 강유전체 메모리 장치 및 그 제조 방법
KR970004014A (ko) 반도체장치
TW200601485A (en) Semiconductor device substrate with wmbedded capacitor
JP2000101022A5 (enExample)
WO1993013547A3 (de) Integrierte schaltung
JPH07297188A (ja) 半導体集積回路装置
JP2004221559A5 (enExample)
KR960019745A (ko) 반도체 디바이스 및 그 제조 방법
EP1202352A3 (en) High breakdown voltage semiconductor device
US7195961B2 (en) SOI structure comprising substrate contacts on both sides of the box, and method for the production of such a structure
JPWO2020245692A5 (enExample)
JP2003092402A5 (enExample)
SE9901575L (sv) Halvledarelement