JPWO2020245692A5 - - Google Patents

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Publication number
JPWO2020245692A5
JPWO2020245692A5 JP2021524488A JP2021524488A JPWO2020245692A5 JP WO2020245692 A5 JPWO2020245692 A5 JP WO2020245692A5 JP 2021524488 A JP2021524488 A JP 2021524488A JP 2021524488 A JP2021524488 A JP 2021524488A JP WO2020245692 A5 JPWO2020245692 A5 JP WO2020245692A5
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JP
Japan
Prior art keywords
conductive layer
transistor
region
layer
gate
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JP2021524488A
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English (en)
Japanese (ja)
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JPWO2020245692A1 (enExample
JP7592588B2 (ja
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Priority claimed from PCT/IB2020/054865 external-priority patent/WO2020245692A1/ja
Publication of JPWO2020245692A1 publication Critical patent/JPWO2020245692A1/ja
Publication of JPWO2020245692A5 publication Critical patent/JPWO2020245692A5/ja
Priority to JP2024202280A priority Critical patent/JP2025019138A/ja
Application granted granted Critical
Publication of JP7592588B2 publication Critical patent/JP7592588B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021524488A 2019-06-07 2020-05-22 半導体装置 Active JP7592588B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024202280A JP2025019138A (ja) 2019-06-07 2024-11-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019106637 2019-06-07
JP2019106637 2019-06-07
PCT/IB2020/054865 WO2020245692A1 (ja) 2019-06-07 2020-05-22 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024202280A Division JP2025019138A (ja) 2019-06-07 2024-11-20 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020245692A1 JPWO2020245692A1 (enExample) 2020-12-10
JPWO2020245692A5 true JPWO2020245692A5 (enExample) 2023-05-29
JP7592588B2 JP7592588B2 (ja) 2024-12-02

Family

ID=73652404

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021524488A Active JP7592588B2 (ja) 2019-06-07 2020-05-22 半導体装置
JP2024202280A Withdrawn JP2025019138A (ja) 2019-06-07 2024-11-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024202280A Withdrawn JP2025019138A (ja) 2019-06-07 2024-11-20 半導体装置

Country Status (3)

Country Link
US (1) US12283600B2 (enExample)
JP (2) JP7592588B2 (enExample)
WO (1) WO2020245692A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020240340A1 (ja) 2019-05-31 2020-12-03 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3161668B2 (ja) * 1994-06-02 2001-04-25 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置
JPH10256489A (ja) * 1997-03-14 1998-09-25 Mitsubishi Electric Corp 半導体装置
US6833590B2 (en) * 2001-01-11 2004-12-21 Renesas Technology Corp. Semiconductor device
US7825447B2 (en) * 2004-04-28 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. MOS capacitor and semiconductor device
JP2006303377A (ja) 2005-04-25 2006-11-02 Renesas Technology Corp 半導体装置
JP2008283633A (ja) * 2007-05-14 2008-11-20 Toshiba Microelectronics Corp キャパシタンス回路
US20090236908A1 (en) 2008-03-21 2009-09-24 Kun-Woo Park Reservoir capacitor and semiconductor memory device including the same
JP2012049237A (ja) 2010-08-25 2012-03-08 Elpida Memory Inc 半導体装置
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6031086B2 (ja) 2012-03-08 2016-11-24 株式会社ソシオネクスト 半導体集積回路装置
JP2014074908A (ja) * 2012-09-13 2014-04-24 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
US9379214B2 (en) * 2014-02-14 2016-06-28 Semi Solutions Llc Reduced variation MOSFET using a drain-extension-last process
JP6306894B2 (ja) * 2014-02-19 2018-04-04 株式会社メガチップス 電流補償回路
US10074576B2 (en) 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP2017055338A (ja) * 2015-09-11 2017-03-16 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6870926B2 (ja) * 2016-06-22 2021-05-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、および電子機器
WO2020240340A1 (ja) 2019-05-31 2020-12-03 株式会社半導体エネルギー研究所 半導体装置

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