JP7592588B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7592588B2
JP7592588B2 JP2021524488A JP2021524488A JP7592588B2 JP 7592588 B2 JP7592588 B2 JP 7592588B2 JP 2021524488 A JP2021524488 A JP 2021524488A JP 2021524488 A JP2021524488 A JP 2021524488A JP 7592588 B2 JP7592588 B2 JP 7592588B2
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Japan
Prior art keywords
conductor
transistor
insulator
oxide
wiring
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JP2021524488A
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English (en)
Japanese (ja)
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JPWO2020245692A5 (enExample
JPWO2020245692A1 (enExample
Inventor
寛司 國武
一樹 津田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2020245692A1 publication Critical patent/JPWO2020245692A1/ja
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Priority to JP2024202280A priority Critical patent/JP2025019138A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021524488A 2019-06-07 2020-05-22 半導体装置 Active JP7592588B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024202280A JP2025019138A (ja) 2019-06-07 2024-11-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019106637 2019-06-07
JP2019106637 2019-06-07
PCT/IB2020/054865 WO2020245692A1 (ja) 2019-06-07 2020-05-22 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024202280A Division JP2025019138A (ja) 2019-06-07 2024-11-20 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020245692A1 JPWO2020245692A1 (enExample) 2020-12-10
JPWO2020245692A5 JPWO2020245692A5 (enExample) 2023-05-29
JP7592588B2 true JP7592588B2 (ja) 2024-12-02

Family

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Family Applications (2)

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JP2021524488A Active JP7592588B2 (ja) 2019-06-07 2020-05-22 半導体装置
JP2024202280A Withdrawn JP2025019138A (ja) 2019-06-07 2024-11-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024202280A Withdrawn JP2025019138A (ja) 2019-06-07 2024-11-20 半導体装置

Country Status (3)

Country Link
US (1) US12283600B2 (enExample)
JP (2) JP7592588B2 (enExample)
WO (1) WO2020245692A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901822B2 (en) 2019-05-31 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303377A (ja) 2005-04-25 2006-11-02 Renesas Technology Corp 半導体装置
JP2008283633A (ja) 2007-05-14 2008-11-20 Toshiba Microelectronics Corp キャパシタンス回路
JP2009231831A (ja) 2008-03-21 2009-10-08 Hynix Semiconductor Inc 蓄積キャパシタ及びそれを備える半導体メモリ装置
JP2012049237A (ja) 2010-08-25 2012-03-08 Elpida Memory Inc 半導体装置
JP2012083738A (ja) 2010-09-15 2012-04-26 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP2012252769A (ja) 2011-05-06 2012-12-20 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015153382A (ja) 2014-02-19 2015-08-24 株式会社メガチップス 電流補償回路
JP2015179838A (ja) 2014-02-28 2015-10-08 株式会社半導体エネルギー研究所 半導体装置
JP2017055338A (ja) 2015-09-11 2017-03-16 株式会社半導体エネルギー研究所 半導体装置、及び電子機器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3161668B2 (ja) * 1994-06-02 2001-04-25 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置
JPH10256489A (ja) 1997-03-14 1998-09-25 Mitsubishi Electric Corp 半導体装置
US6833590B2 (en) * 2001-01-11 2004-12-21 Renesas Technology Corp. Semiconductor device
WO2005106961A1 (en) * 2004-04-28 2005-11-10 Semiconductor Energy Laboratory Co., Ltd. Mos capacitor and semiconductor device
WO2013132841A1 (ja) 2012-03-08 2013-09-12 パナソニック株式会社 半導体集積回路装置
JP2014074908A (ja) * 2012-09-13 2014-04-24 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
US9379214B2 (en) * 2014-02-14 2016-06-28 Semi Solutions Llc Reduced variation MOSFET using a drain-extension-last process
JP6870926B2 (ja) * 2016-06-22 2021-05-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、および電子機器
US11901822B2 (en) 2019-05-31 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303377A (ja) 2005-04-25 2006-11-02 Renesas Technology Corp 半導体装置
JP2008283633A (ja) 2007-05-14 2008-11-20 Toshiba Microelectronics Corp キャパシタンス回路
JP2009231831A (ja) 2008-03-21 2009-10-08 Hynix Semiconductor Inc 蓄積キャパシタ及びそれを備える半導体メモリ装置
JP2012049237A (ja) 2010-08-25 2012-03-08 Elpida Memory Inc 半導体装置
JP2012083738A (ja) 2010-09-15 2012-04-26 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP2012252769A (ja) 2011-05-06 2012-12-20 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015153382A (ja) 2014-02-19 2015-08-24 株式会社メガチップス 電流補償回路
JP2015179838A (ja) 2014-02-28 2015-10-08 株式会社半導体エネルギー研究所 半導体装置
JP2017055338A (ja) 2015-09-11 2017-03-16 株式会社半導体エネルギー研究所 半導体装置、及び電子機器

Also Published As

Publication number Publication date
US20220238560A1 (en) 2022-07-28
WO2020245692A1 (ja) 2020-12-10
JPWO2020245692A1 (enExample) 2020-12-10
US12283600B2 (en) 2025-04-22
JP2025019138A (ja) 2025-02-06

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