JP2000101022A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JP2000101022A JP2000101022A JP10267118A JP26711898A JP2000101022A JP 2000101022 A JP2000101022 A JP 2000101022A JP 10267118 A JP10267118 A JP 10267118A JP 26711898 A JP26711898 A JP 26711898A JP 2000101022 A JP2000101022 A JP 2000101022A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- power supply
- capacitor
- voltage wiring
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 44
- 239000003990 capacitor Substances 0.000 claims abstract description 83
- 238000009792 diffusion process Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 29
- 230000003071 parasitic effect Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 abstract description 4
- 230000003068 static effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 117
- 238000010586 diagram Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10267118A JP2000101022A (ja) | 1998-09-21 | 1998-09-21 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10267118A JP2000101022A (ja) | 1998-09-21 | 1998-09-21 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000101022A true JP2000101022A (ja) | 2000-04-07 |
| JP2000101022A5 JP2000101022A5 (enExample) | 2004-09-24 |
Family
ID=17440328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10267118A Withdrawn JP2000101022A (ja) | 1998-09-21 | 1998-09-21 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000101022A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006092756A1 (en) * | 2005-03-02 | 2006-09-08 | Nxp B.V. | Electronic device and use thereof |
| JP2006245551A (ja) * | 2005-02-02 | 2006-09-14 | Ricoh Co Ltd | 半導体集積装置及びそのシールド配線方法 |
-
1998
- 1998-09-21 JP JP10267118A patent/JP2000101022A/ja not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006245551A (ja) * | 2005-02-02 | 2006-09-14 | Ricoh Co Ltd | 半導体集積装置及びそのシールド配線方法 |
| WO2006092756A1 (en) * | 2005-03-02 | 2006-09-08 | Nxp B.V. | Electronic device and use thereof |
| US7838965B2 (en) | 2005-03-02 | 2010-11-23 | Nxp B.V. | ESD protected integrated capacitor with large capacity |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20041007 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050208 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20050301 |