JP2000091416A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP2000091416A JP2000091416A JP10255113A JP25511398A JP2000091416A JP 2000091416 A JP2000091416 A JP 2000091416A JP 10255113 A JP10255113 A JP 10255113A JP 25511398 A JP25511398 A JP 25511398A JP 2000091416 A JP2000091416 A JP 2000091416A
- Authority
- JP
- Japan
- Prior art keywords
- element isolation
- insulating film
- isolation insulating
- forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000002955 isolation Methods 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000003647 oxidation Effects 0.000 claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000001039 wet etching Methods 0.000 abstract description 5
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10255113A JP2000091416A (ja) | 1998-09-09 | 1998-09-09 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10255113A JP2000091416A (ja) | 1998-09-09 | 1998-09-09 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000091416A true JP2000091416A (ja) | 2000-03-31 |
| JP2000091416A5 JP2000091416A5 (enExample) | 2005-08-25 |
Family
ID=17274291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10255113A Withdrawn JP2000091416A (ja) | 1998-09-09 | 1998-09-09 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000091416A (enExample) |
-
1998
- 1998-09-09 JP JP10255113A patent/JP2000091416A/ja not_active Withdrawn
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050218 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050310 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060831 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20070404 |