JP2000068265A5 - - Google Patents

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Publication number
JP2000068265A5
JP2000068265A5 JP1998255956A JP25595698A JP2000068265A5 JP 2000068265 A5 JP2000068265 A5 JP 2000068265A5 JP 1998255956 A JP1998255956 A JP 1998255956A JP 25595698 A JP25595698 A JP 25595698A JP 2000068265 A5 JP2000068265 A5 JP 2000068265A5
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JP
Japan
Prior art keywords
insulating film
oxide insulating
sample
irradiating
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998255956A
Other languages
English (en)
Japanese (ja)
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JP2000068265A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10255956A priority Critical patent/JP2000068265A/ja
Priority claimed from JP10255956A external-priority patent/JP2000068265A/ja
Publication of JP2000068265A publication Critical patent/JP2000068265A/ja
Publication of JP2000068265A5 publication Critical patent/JP2000068265A5/ja
Pending legal-status Critical Current

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JP10255956A 1998-08-25 1998-08-25 酸化絶縁膜のアニ−ル方法 Pending JP2000068265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10255956A JP2000068265A (ja) 1998-08-25 1998-08-25 酸化絶縁膜のアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10255956A JP2000068265A (ja) 1998-08-25 1998-08-25 酸化絶縁膜のアニ−ル方法

Publications (2)

Publication Number Publication Date
JP2000068265A JP2000068265A (ja) 2000-03-03
JP2000068265A5 true JP2000068265A5 (enExample) 2005-11-04

Family

ID=17285925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10255956A Pending JP2000068265A (ja) 1998-08-25 1998-08-25 酸化絶縁膜のアニ−ル方法

Country Status (1)

Country Link
JP (1) JP2000068265A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4449226B2 (ja) 2000-05-22 2010-04-14 東京エレクトロン株式会社 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置
US6828260B2 (en) * 2002-10-29 2004-12-07 Hewlett-Packard Development Company, L.P. Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device
JP2006319077A (ja) * 2005-05-12 2006-11-24 Elpida Memory Inc 金属酸化物誘電体膜の形成方法及び半導体記憶装置の製造方法
JP2010212391A (ja) * 2009-03-10 2010-09-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置

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