JP2000068265A - 酸化絶縁膜のアニ−ル方法 - Google Patents
酸化絶縁膜のアニ−ル方法Info
- Publication number
- JP2000068265A JP2000068265A JP10255956A JP25595698A JP2000068265A JP 2000068265 A JP2000068265 A JP 2000068265A JP 10255956 A JP10255956 A JP 10255956A JP 25595698 A JP25595698 A JP 25595698A JP 2000068265 A JP2000068265 A JP 2000068265A
- Authority
- JP
- Japan
- Prior art keywords
- annealing
- insulating film
- ozone
- film
- room
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000137 annealing Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 20
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 11
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 11
- 239000011521 glass Substances 0.000 abstract description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 13
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 238000012805 post-processing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 108700042918 BF02 Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101000634707 Homo sapiens Nucleolar complex protein 3 homolog Proteins 0.000 description 1
- 102100029099 Nucleolar complex protein 3 homolog Human genes 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10255956A JP2000068265A (ja) | 1998-08-25 | 1998-08-25 | 酸化絶縁膜のアニ−ル方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10255956A JP2000068265A (ja) | 1998-08-25 | 1998-08-25 | 酸化絶縁膜のアニ−ル方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000068265A true JP2000068265A (ja) | 2000-03-03 |
| JP2000068265A5 JP2000068265A5 (enExample) | 2005-11-04 |
Family
ID=17285925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10255956A Pending JP2000068265A (ja) | 1998-08-25 | 1998-08-25 | 酸化絶縁膜のアニ−ル方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000068265A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6649218B2 (en) | 2000-05-22 | 2003-11-18 | Tokyo Electron Limited | Single substrate processing film forming method |
| JP2004153258A (ja) * | 2002-10-29 | 2004-05-27 | Hewlett-Packard Development Co Lp | トンネル接合素子のトンネル障壁層を処理する方法 |
| JP2006319077A (ja) * | 2005-05-12 | 2006-11-24 | Elpida Memory Inc | 金属酸化物誘電体膜の形成方法及び半導体記憶装置の製造方法 |
| JP2010212391A (ja) * | 2009-03-10 | 2010-09-24 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
-
1998
- 1998-08-25 JP JP10255956A patent/JP2000068265A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6649218B2 (en) | 2000-05-22 | 2003-11-18 | Tokyo Electron Limited | Single substrate processing film forming method |
| JP2004153258A (ja) * | 2002-10-29 | 2004-05-27 | Hewlett-Packard Development Co Lp | トンネル接合素子のトンネル障壁層を処理する方法 |
| JP2006319077A (ja) * | 2005-05-12 | 2006-11-24 | Elpida Memory Inc | 金属酸化物誘電体膜の形成方法及び半導体記憶装置の製造方法 |
| JP2010212391A (ja) * | 2009-03-10 | 2010-09-24 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
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Legal Events
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