JP2000068265A5 - - Google Patents
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- Publication number
- JP2000068265A5 JP2000068265A5 JP1998255956A JP25595698A JP2000068265A5 JP 2000068265 A5 JP2000068265 A5 JP 2000068265A5 JP 1998255956 A JP1998255956 A JP 1998255956A JP 25595698 A JP25595698 A JP 25595698A JP 2000068265 A5 JP2000068265 A5 JP 2000068265A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- oxide insulating
- sample
- irradiating
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000001678 irradiating Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
Claims (2)
- 酸化絶縁膜を形成した試料を３５０〜６００℃に加熱するとともに、濃度１０〜２００ｇ／ｍ3 のオゾン雰囲気中で前記試料に紫外線を照射することを特徴とする酸化絶縁膜の製造方法。
- 請求項１に記載の処理を行った後、ガスを窒素に切り替え、試料温度が３００℃以下に低下するまで一定時間冷却することを特徴とする酸化絶縁膜の製造方法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10255956A JP2000068265A (ja) | 1998-08-25 | 1998-08-25 | 酸化絶縁膜のアニ−ル方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10255956A JP2000068265A (ja) | 1998-08-25 | 1998-08-25 | 酸化絶縁膜のアニ−ル方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000068265A JP2000068265A (ja) | 2000-03-03 |
| JP2000068265A5 true JP2000068265A5 (ja) | 2005-11-04 |
Family
ID=17285925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10255956A Pending JP2000068265A (ja) | 1998-08-25 | 1998-08-25 | 酸化絶縁膜のアニ−ル方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000068265A (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4449226B2 (ja) | 2000-05-22 | 2010-04-14 | 東京エレクトロン株式会社 | 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置 |
| US6828260B2 (en) * | 2002-10-29 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device |
| JP2006319077A (ja) * | 2005-05-12 | 2006-11-24 | Elpida Memory Inc | 金属酸化物誘電体膜の形成方法及び半導体記憶装置の製造方法 |
| JP2010212391A (ja) * | 2009-03-10 | 2010-09-24 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
-
1998
- 1998-08-25 JP JP10255956A patent/JP2000068265A/ja active Pending
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