JP2000058878A - 半導体素子のキャパシタ及びその製造方法 - Google Patents

半導体素子のキャパシタ及びその製造方法

Info

Publication number
JP2000058878A
JP2000058878A JP11220171A JP22017199A JP2000058878A JP 2000058878 A JP2000058878 A JP 2000058878A JP 11220171 A JP11220171 A JP 11220171A JP 22017199 A JP22017199 A JP 22017199A JP 2000058878 A JP2000058878 A JP 2000058878A
Authority
JP
Japan
Prior art keywords
tantalum
capacitor
film
gas
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11220171A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000058878A5 (OSRAM
Inventor
Ju Howan Chul
ジュ ホワン チュル
Ki Bum Kim
バム キム キ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JP2000058878A publication Critical patent/JP2000058878A/ja
Publication of JP2000058878A5 publication Critical patent/JP2000058878A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5

Landscapes

  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
JP11220171A 1998-08-04 1999-08-03 半導体素子のキャパシタ及びその製造方法 Pending JP2000058878A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1998-31766 1998-08-04
KR1019980031766A KR100286011B1 (ko) 1998-08-04 1998-08-04 반도체소자의캐퍼시터및그제조방법

Publications (2)

Publication Number Publication Date
JP2000058878A true JP2000058878A (ja) 2000-02-25
JP2000058878A5 JP2000058878A5 (OSRAM) 2006-09-14

Family

ID=19546418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11220171A Pending JP2000058878A (ja) 1998-08-04 1999-08-03 半導体素子のキャパシタ及びその製造方法

Country Status (4)

Country Link
US (1) US6338995B1 (OSRAM)
JP (1) JP2000058878A (OSRAM)
KR (1) KR100286011B1 (OSRAM)
TW (1) TW552666B (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287910B2 (en) * 1999-12-23 2001-09-11 Hyundai Electronics Industries Co., Ltd. Method for forming a capacitor using tantalum nitride as a capacitor dielectric
JP2001257208A (ja) * 1999-12-29 2001-09-21 Hynix Semiconductor Inc 半導体装置のゲート絶縁膜形成方法
KR100386450B1 (ko) * 2000-12-29 2003-06-02 주식회사 하이닉스반도체 반도체 소자의 커패시터 형성방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100328454B1 (ko) * 1999-06-29 2002-03-16 박종섭 반도체 소자의 캐패시터 제조 방법
KR100331270B1 (ko) * 1999-07-01 2002-04-06 박종섭 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR100321178B1 (ko) * 1999-12-30 2002-03-18 박종섭 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR20010066386A (ko) * 1999-12-31 2001-07-11 박종섭 플래시 메모리의 게이트전극 제조방법
KR100367404B1 (ko) * 1999-12-31 2003-01-10 주식회사 하이닉스반도체 다층 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR100587047B1 (ko) * 2000-06-01 2006-06-07 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100618683B1 (ko) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100618682B1 (ko) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100599440B1 (ko) * 2000-06-30 2006-07-12 주식회사 하이닉스반도체 캐패시터의 제조 방법
KR100639200B1 (ko) * 2000-06-30 2006-10-31 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
US6934262B1 (en) 2000-08-26 2005-08-23 Cisco Technology, Inc. Method and apparatus for restricting the assignment of VLANs
KR100401503B1 (ko) * 2001-04-30 2003-10-17 주식회사 하이닉스반도체 반도체소자의 캐패시터 및 그 제조방법
KR100910220B1 (ko) * 2002-07-12 2009-07-31 주식회사 하이닉스반도체 반도체소자의 유전체박막 제조방법
KR20060072680A (ko) * 2004-12-23 2006-06-28 주식회사 하이닉스반도체 반도체 장치의 커패시터 및 그 제조방법
US20100302707A1 (en) * 2009-05-26 2010-12-02 General Electric Company Composite structures for high energy-density capacitors and other devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134013A (ja) * 1984-12-04 1986-06-21 Sanyo Electric Co Ltd 化合物半導体結晶成長法
JPH07263442A (ja) * 1994-03-17 1995-10-13 Sony Corp タンタル系高誘電体材料及び高誘電体膜の形成方法並びに半導体装置
JPH08107077A (ja) * 1994-08-10 1996-04-23 Nissin Electric Co Ltd 強誘電体膜形成方法及び装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2776826B2 (ja) * 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
US5569619A (en) 1992-06-24 1996-10-29 Lg Semicon Co., Ltd. Method for forming a capacitor of a semiconductor memory cell
JP3319138B2 (ja) * 1994-03-17 2002-08-26 ソニー株式会社 タンタルを含む高誘電体膜の形成方法
KR0155879B1 (ko) 1995-09-13 1998-12-01 김광호 오산화 이탄탈륨 유전막 커패시터 제조방법
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
US6075691A (en) * 1997-03-06 2000-06-13 Lucent Technologies Inc. Thin film capacitors and process for making them
US6107155A (en) * 1998-08-07 2000-08-22 Taiwan Semiconductor Manufacturing Company Method for making a more reliable storage capacitor for dynamic random access memory (DRAM)

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134013A (ja) * 1984-12-04 1986-06-21 Sanyo Electric Co Ltd 化合物半導体結晶成長法
JPH07263442A (ja) * 1994-03-17 1995-10-13 Sony Corp タンタル系高誘電体材料及び高誘電体膜の形成方法並びに半導体装置
JPH08107077A (ja) * 1994-08-10 1996-04-23 Nissin Electric Co Ltd 強誘電体膜形成方法及び装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287910B2 (en) * 1999-12-23 2001-09-11 Hyundai Electronics Industries Co., Ltd. Method for forming a capacitor using tantalum nitride as a capacitor dielectric
GB2364825A (en) * 1999-12-23 2002-02-06 Hyundai Electronics Ind A capacitor using a tantalum nitride dielectric
GB2364825B (en) * 1999-12-23 2004-04-14 Hyundai Electronics Ind Method for fabricating semiconductor device capacitors
JP2001257208A (ja) * 1999-12-29 2001-09-21 Hynix Semiconductor Inc 半導体装置のゲート絶縁膜形成方法
KR100386450B1 (ko) * 2000-12-29 2003-06-02 주식회사 하이닉스반도체 반도체 소자의 커패시터 형성방법

Also Published As

Publication number Publication date
US6338995B1 (en) 2002-01-15
TW552666B (en) 2003-09-11
KR100286011B1 (ko) 2001-04-16
KR20000013090A (ko) 2000-03-06

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