JP2000049122A5 - - Google Patents

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Publication number
JP2000049122A5
JP2000049122A5 JP1998215119A JP21511998A JP2000049122A5 JP 2000049122 A5 JP2000049122 A5 JP 2000049122A5 JP 1998215119 A JP1998215119 A JP 1998215119A JP 21511998 A JP21511998 A JP 21511998A JP 2000049122 A5 JP2000049122 A5 JP 2000049122A5
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JP
Japan
Prior art keywords
less
processing
grindstone
abrasive grains
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998215119A
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English (en)
Japanese (ja)
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JP3858462B2 (ja
JP2000049122A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP21511998A priority Critical patent/JP3858462B2/ja
Priority claimed from JP21511998A external-priority patent/JP3858462B2/ja
Priority to US09/359,760 priority patent/US6524961B1/en
Publication of JP2000049122A publication Critical patent/JP2000049122A/ja
Priority to US10/308,088 priority patent/US6723144B2/en
Publication of JP2000049122A5 publication Critical patent/JP2000049122A5/ja
Application granted granted Critical
Publication of JP3858462B2 publication Critical patent/JP3858462B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP21511998A 1998-07-30 1998-07-30 半導体装置の製造方法 Expired - Fee Related JP3858462B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP21511998A JP3858462B2 (ja) 1998-07-30 1998-07-30 半導体装置の製造方法
US09/359,760 US6524961B1 (en) 1998-07-30 1999-07-22 Semiconductor device fabricating method
US10/308,088 US6723144B2 (en) 1998-07-30 2002-12-03 Semiconductor device fabricating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21511998A JP3858462B2 (ja) 1998-07-30 1998-07-30 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000049122A JP2000049122A (ja) 2000-02-18
JP2000049122A5 true JP2000049122A5 (enExample) 2004-10-14
JP3858462B2 JP3858462B2 (ja) 2006-12-13

Family

ID=16667063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21511998A Expired - Fee Related JP3858462B2 (ja) 1998-07-30 1998-07-30 半導体装置の製造方法

Country Status (2)

Country Link
US (2) US6524961B1 (enExample)
JP (1) JP3858462B2 (enExample)

Families Citing this family (29)

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JP3858462B2 (ja) * 1998-07-30 2006-12-13 株式会社日立製作所 半導体装置の製造方法
US20030199238A1 (en) * 2000-01-18 2003-10-23 Shigeo Moriyama Polishing apparatus and method for producing semiconductors using the apparatus
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JP2002324772A (ja) 2001-04-25 2002-11-08 Hitachi Ltd 半導体装置の製造方法及び製造装置
JP3934388B2 (ja) * 2001-10-18 2007-06-20 株式会社ルネサステクノロジ 半導体装置の製造方法及び製造装置
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US6910951B2 (en) 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
US7300875B2 (en) * 2004-02-11 2007-11-27 Infineon Technologies Richmond, Lp Post metal chemical mechanical polishing dry cleaning
US8052669B2 (en) 2004-02-25 2011-11-08 Femasys Inc. Methods and devices for delivery of compositions to conduits
US9238127B2 (en) 2004-02-25 2016-01-19 Femasys Inc. Methods and devices for delivering to conduit
US8048086B2 (en) 2004-02-25 2011-11-01 Femasys Inc. Methods and devices for conduit occlusion
US8048101B2 (en) 2004-02-25 2011-11-01 Femasys Inc. Methods and devices for conduit occlusion
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US10070888B2 (en) 2008-10-03 2018-09-11 Femasys, Inc. Methods and devices for sonographic imaging
US9554826B2 (en) 2008-10-03 2017-01-31 Femasys, Inc. Contrast agent injection system for sonographic imaging
US12171463B2 (en) 2008-10-03 2024-12-24 Femasys Inc. Contrast agent generation and injection system for sonographic imaging
DE102008053610B4 (de) * 2008-10-29 2011-03-31 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
WO2010114075A1 (ja) * 2009-03-31 2010-10-07 本田技研工業株式会社 砥石、砥石の製造方法、砥石の製造装置
US8877643B2 (en) * 2009-06-05 2014-11-04 Sumco Corporation Method of polishing a silicon wafer
DE102009047926A1 (de) * 2009-10-01 2011-04-14 Siltronic Ag Verfahren zum Polieren von Halbleiterscheiben
CN104742007B (zh) * 2013-12-30 2017-08-25 中芯国际集成电路制造(北京)有限公司 化学机械研磨装置和化学机械研磨方法
US9105687B1 (en) 2014-04-16 2015-08-11 Nxp B.V. Method for reducing defects in shallow trench isolation
CN111744891B (zh) * 2020-05-22 2022-06-10 西安奕斯伟材料科技有限公司 研磨机吸附台表面的清洁方法
CN114310627A (zh) * 2021-12-30 2022-04-12 西安奕斯伟材料科技有限公司 一种用于对硅片进行抛光的抛光垫和抛光设备

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JP3858462B2 (ja) * 1998-07-30 2006-12-13 株式会社日立製作所 半導体装置の製造方法

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