JP2000017422A - 導電膜パターン化用マスク - Google Patents
導電膜パターン化用マスクInfo
- Publication number
- JP2000017422A JP2000017422A JP19176998A JP19176998A JP2000017422A JP 2000017422 A JP2000017422 A JP 2000017422A JP 19176998 A JP19176998 A JP 19176998A JP 19176998 A JP19176998 A JP 19176998A JP 2000017422 A JP2000017422 A JP 2000017422A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- conductive film
- film
- substrate
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000059 patterning Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000005488 sandblasting Methods 0.000 claims abstract description 6
- 238000007788 roughening Methods 0.000 claims abstract 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000004576 sand Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 238000001259 photo etching Methods 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 70
- 230000015572 biosynthetic process Effects 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000740 bleeding effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 that is Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optical Filters (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19176998A JP2000017422A (ja) | 1998-07-07 | 1998-07-07 | 導電膜パターン化用マスク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19176998A JP2000017422A (ja) | 1998-07-07 | 1998-07-07 | 導電膜パターン化用マスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000017422A true JP2000017422A (ja) | 2000-01-18 |
| JP2000017422A5 JP2000017422A5 (enExample) | 2005-10-27 |
Family
ID=16280222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19176998A Pending JP2000017422A (ja) | 1998-07-07 | 1998-07-07 | 導電膜パターン化用マスク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000017422A (enExample) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001079580A3 (en) * | 2000-04-12 | 2002-07-04 | Steag Hamatech Ag | Apparatus and method for handling and masking a substrate |
| JP2004315948A (ja) * | 2003-04-21 | 2004-11-11 | Nikko Materials Co Ltd | 薄膜形成装置用汚染防止装置 |
| WO2007055030A1 (ja) * | 2005-11-14 | 2007-05-18 | Fujitsu Hitachi Plasma Display Limited | Ｃｖｄ装置を用いる成膜方法およびマスキングのためのマスク |
| WO2007055031A1 (ja) * | 2005-11-14 | 2007-05-18 | Fujitsu Hitachi Plasma Display Limited | Ｃｖｄ装置を用いる成膜方法およびマスキングのためのマスク |
| JP2009209381A (ja) * | 2008-02-29 | 2009-09-17 | Fujifilm Corp | 成膜装置、ガスバリアフィルムおよびガスバリアフィルムの製造方法 |
| JP2013087321A (ja) * | 2011-10-17 | 2013-05-13 | Japan Steel Works Ltd:The | マスキング成膜方法 |
| CN103911585A (zh) * | 2013-01-08 | 2014-07-09 | 旭晖应用材料股份有限公司 | 遮罩 |
| JP2017519109A (ja) * | 2014-06-13 | 2017-07-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 均一性の改善及びエッジの長寿命化のための平坦なエッジの設計 |
| JP2017150037A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | シャドーマスク、シャドーマスクの製造方法及び表示装置の製造方法 |
| JP2017150038A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | シャドーマスク及び表示装置の製造方法 |
| JP2019196533A (ja) * | 2018-05-11 | 2019-11-14 | 大日本印刷株式会社 | 蒸着マスク、蒸着マスクの洗浄方法及び蒸着方法 |
| JP2020105635A (ja) * | 2016-02-25 | 2020-07-09 | 株式会社ジャパンディスプレイ | 蒸着マスク |
| JP2022068330A (ja) * | 2015-04-24 | 2022-05-09 | エルジー イノテック カンパニー リミテッド | 金属基板およびこれを用いた蒸着用マスク |
-
1998
- 1998-07-07 JP JP19176998A patent/JP2000017422A/ja active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001079580A3 (en) * | 2000-04-12 | 2002-07-04 | Steag Hamatech Ag | Apparatus and method for handling and masking a substrate |
| JP2004315948A (ja) * | 2003-04-21 | 2004-11-11 | Nikko Materials Co Ltd | 薄膜形成装置用汚染防止装置 |
| WO2007055030A1 (ja) * | 2005-11-14 | 2007-05-18 | Fujitsu Hitachi Plasma Display Limited | Ｃｖｄ装置を用いる成膜方法およびマスキングのためのマスク |
| WO2007055031A1 (ja) * | 2005-11-14 | 2007-05-18 | Fujitsu Hitachi Plasma Display Limited | Ｃｖｄ装置を用いる成膜方法およびマスキングのためのマスク |
| JP2009209381A (ja) * | 2008-02-29 | 2009-09-17 | Fujifilm Corp | 成膜装置、ガスバリアフィルムおよびガスバリアフィルムの製造方法 |
| JP2013087321A (ja) * | 2011-10-17 | 2013-05-13 | Japan Steel Works Ltd:The | マスキング成膜方法 |
| CN103911585A (zh) * | 2013-01-08 | 2014-07-09 | 旭晖应用材料股份有限公司 | 遮罩 |
| JP2017519109A (ja) * | 2014-06-13 | 2017-07-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 均一性の改善及びエッジの長寿命化のための平坦なエッジの設計 |
| JP2022068330A (ja) * | 2015-04-24 | 2022-05-09 | エルジー イノテック カンパニー リミテッド | 金属基板およびこれを用いた蒸着用マスク |
| JP7577701B2 (ja) | 2015-04-24 | 2024-11-05 | エルジー イノテック カンパニー リミテッド | 金属基板およびこれを用いた蒸着用マスク |
| JP2017150037A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | シャドーマスク、シャドーマスクの製造方法及び表示装置の製造方法 |
| JP2020105635A (ja) * | 2016-02-25 | 2020-07-09 | 株式会社ジャパンディスプレイ | 蒸着マスク |
| CN111424233A (zh) * | 2016-02-25 | 2020-07-17 | 株式会社日本显示器 | 蒸镀掩模 |
| CN111424233B (zh) * | 2016-02-25 | 2022-04-01 | 株式会社日本显示器 | 蒸镀掩模 |
| JP2017150038A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | シャドーマスク及び表示装置の製造方法 |
| JP2019196533A (ja) * | 2018-05-11 | 2019-11-14 | 大日本印刷株式会社 | 蒸着マスク、蒸着マスクの洗浄方法及び蒸着方法 |
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Legal Events
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|---|---|---|---|
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