ITTO990884A0 - Memoria non volatile di tipo serial-flash, eprom, eeprom e flash eepro m in configurazione amg. - Google Patents
Memoria non volatile di tipo serial-flash, eprom, eeprom e flash eepro m in configurazione amg.Info
- Publication number
- ITTO990884A0 ITTO990884A0 IT99TO000884A ITTO990884A ITTO990884A0 IT TO990884 A0 ITTO990884 A0 IT TO990884A0 IT 99TO000884 A IT99TO000884 A IT 99TO000884A IT TO990884 A ITTO990884 A IT TO990884A IT TO990884 A0 ITTO990884 A0 IT TO990884A0
- Authority
- IT
- Italy
- Prior art keywords
- flash
- amg
- eprom
- eeprom
- serial
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999TO000884A IT1309102B1 (it) | 1999-10-12 | 1999-10-12 | Memoria non volatile di tipo serial-flash, eprom, eeprom e flasheeprom in configurazione amg. |
US09/686,362 US6381173B1 (en) | 1999-10-12 | 2000-10-10 | Serial-flash, EPROM, EEPROM and flash EEPROM nonvolatile memory in AMG configuration |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999TO000884A IT1309102B1 (it) | 1999-10-12 | 1999-10-12 | Memoria non volatile di tipo serial-flash, eprom, eeprom e flasheeprom in configurazione amg. |
Publications (3)
Publication Number | Publication Date |
---|---|
ITTO990884A0 true ITTO990884A0 (it) | 1999-10-12 |
ITTO990884A1 ITTO990884A1 (it) | 2001-04-12 |
IT1309102B1 IT1309102B1 (it) | 2002-01-16 |
Family
ID=11418138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1999TO000884A IT1309102B1 (it) | 1999-10-12 | 1999-10-12 | Memoria non volatile di tipo serial-flash, eprom, eeprom e flasheeprom in configurazione amg. |
Country Status (2)
Country | Link |
---|---|
US (1) | US6381173B1 (it) |
IT (1) | IT1309102B1 (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6128220A (en) * | 1999-01-21 | 2000-10-03 | Intel Corporation | Apparatus for enabling EEPROM functionality using a flash memory device |
US6128219A (en) * | 1999-10-27 | 2000-10-03 | Stmicroelectronics, S.R.L. | Nonvolatile memory test structure and nonvolatile memory reliability test method |
-
1999
- 1999-10-12 IT IT1999TO000884A patent/IT1309102B1/it active
-
2000
- 2000-10-10 US US09/686,362 patent/US6381173B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6381173B1 (en) | 2002-04-30 |
IT1309102B1 (it) | 2002-01-16 |
ITTO990884A1 (it) | 2001-04-12 |
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