ITTO20020118A0 - Dispositivo integrante una matrice di memoria non volatile e una matrice di memoria volatile. - Google Patents
Dispositivo integrante una matrice di memoria non volatile e una matrice di memoria volatile.Info
- Publication number
- ITTO20020118A0 ITTO20020118A0 IT2002TO000118A ITTO20020118A ITTO20020118A0 IT TO20020118 A0 ITTO20020118 A0 IT TO20020118A0 IT 2002TO000118 A IT2002TO000118 A IT 2002TO000118A IT TO20020118 A ITTO20020118 A IT TO20020118A IT TO20020118 A0 ITTO20020118 A0 IT TO20020118A0
- Authority
- IT
- Italy
- Prior art keywords
- volatile memory
- memory matrix
- device integrating
- matrix
- integrating
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2002TO000118A ITTO20020118A1 (it) | 2002-02-08 | 2002-02-08 | Dispositivo integrante una matrice di memoria non volatile e una matrice di memoria volatile. |
US10/360,840 US7050322B2 (en) | 2002-02-08 | 2003-02-07 | Device integrating a nonvolatile memory array and a volatile memory array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2002TO000118A ITTO20020118A1 (it) | 2002-02-08 | 2002-02-08 | Dispositivo integrante una matrice di memoria non volatile e una matrice di memoria volatile. |
Publications (2)
Publication Number | Publication Date |
---|---|
ITTO20020118A0 true ITTO20020118A0 (it) | 2002-02-08 |
ITTO20020118A1 ITTO20020118A1 (it) | 2003-08-08 |
Family
ID=27638834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2002TO000118A ITTO20020118A1 (it) | 2002-02-08 | 2002-02-08 | Dispositivo integrante una matrice di memoria non volatile e una matrice di memoria volatile. |
Country Status (2)
Country | Link |
---|---|
US (1) | US7050322B2 (it) |
IT (1) | ITTO20020118A1 (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7554855B2 (en) * | 2006-12-20 | 2009-06-30 | Mosaid Technologies Incorporated | Hybrid solid-state memory system having volatile and non-volatile memory |
US7869335B2 (en) * | 2007-10-09 | 2011-01-11 | Seagate Technology Llc | Multiple ferroelectric films |
US9761312B1 (en) | 2016-03-16 | 2017-09-12 | Micron Technology, Inc. | FeRAM-DRAM hybrid memory |
US10282108B2 (en) | 2016-08-31 | 2019-05-07 | Micron Technology, Inc. | Hybrid memory device using different types of capacitors |
KR102362622B1 (ko) * | 2018-02-23 | 2022-02-14 | 삼성전자주식회사 | 서로 다른 종류의 메모리 셀들을 갖는 반도체 소자 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5768182A (en) * | 1991-05-21 | 1998-06-16 | The Regents Of The University Of California | Ferroelectric nonvolatile dynamic random access memory device |
JPH05175460A (ja) * | 1991-12-26 | 1993-07-13 | Sharp Corp | 半導体メモリ |
US5539279A (en) * | 1993-06-23 | 1996-07-23 | Hitachi, Ltd. | Ferroelectric memory |
US5675547A (en) * | 1995-06-01 | 1997-10-07 | Sony Corporation | One time programmable read only memory programmed by destruction of insulating layer |
US6265738B1 (en) * | 1997-03-03 | 2001-07-24 | Matsushita Electronics Corporation | Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures |
US6441415B1 (en) * | 1999-06-25 | 2002-08-27 | Texas Instruments Incorporated | Ferroelectric and paraelectric thin film devices using dopants which eliminate ferroelectricity |
US6141238A (en) * | 1999-08-30 | 2000-10-31 | Micron Technology, Inc. | Dynamic random access memory (DRAM) cells with repressed ferroelectric memory methods of reading same, and apparatuses including same |
US6337805B1 (en) * | 1999-08-30 | 2002-01-08 | Micron Technology, Inc. | Discrete devices including EAPROM transistor and NVRAM memory cell with edge defined ferroelectric capacitance, methods for operating same, and apparatuses including same |
-
2002
- 2002-02-08 IT IT2002TO000118A patent/ITTO20020118A1/it unknown
-
2003
- 2003-02-07 US US10/360,840 patent/US7050322B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20030174531A1 (en) | 2003-09-18 |
ITTO20020118A1 (it) | 2003-08-08 |
US7050322B2 (en) | 2006-05-23 |
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