ITMI911485A0 - Circuito di precarica di bit line per la lettura di una cella di memoria eprom - Google Patents

Circuito di precarica di bit line per la lettura di una cella di memoria eprom

Info

Publication number
ITMI911485A0
ITMI911485A0 IT91MI1485A ITMI911485A ITMI911485A0 IT MI911485 A0 ITMI911485 A0 IT MI911485A0 IT 91MI1485 A IT91MI1485 A IT 91MI1485A IT MI911485 A ITMI911485 A IT MI911485A IT MI911485 A0 ITMI911485 A0 IT MI911485A0
Authority
IT
Italy
Prior art keywords
reading
memory cell
bit line
precharge circuit
eprom memory
Prior art date
Application number
IT91MI1485A
Other languages
English (en)
Inventor
Corrado Villa
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to ITMI911485A priority Critical patent/IT1249616B/it
Publication of ITMI911485A0 publication Critical patent/ITMI911485A0/it
Priority to EP92201461A priority patent/EP0516225B1/en
Priority to DE69221940T priority patent/DE69221940T2/de
Priority to JP13821692A priority patent/JPH05266679A/ja
Publication of ITMI911485A1 publication Critical patent/ITMI911485A1/it
Application granted granted Critical
Publication of IT1249616B publication Critical patent/IT1249616B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
ITMI911485A 1991-05-30 1991-05-30 Circuito di precarica di bit line per la lettura di una cella di memoria eprom. IT1249616B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ITMI911485A IT1249616B (it) 1991-05-30 1991-05-30 Circuito di precarica di bit line per la lettura di una cella di memoria eprom.
EP92201461A EP0516225B1 (en) 1991-05-30 1992-05-22 Precharging circuit of bit line for reading an EPROM memory cell
DE69221940T DE69221940T2 (de) 1991-05-30 1992-05-22 Bitleitungsvorladungsschaltung zum Lesen einer EPROM-Speicherzelle
JP13821692A JPH05266679A (ja) 1991-05-30 1992-05-29 Ｅｐｒｏｍ メモリー・セルを読出すためのビット・ラインのプリチャージ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI911485A IT1249616B (it) 1991-05-30 1991-05-30 Circuito di precarica di bit line per la lettura di una cella di memoria eprom.

Publications (3)

Publication Number Publication Date
ITMI911485A0 true ITMI911485A0 (it) 1991-05-30
ITMI911485A1 ITMI911485A1 (it) 1992-11-30
IT1249616B IT1249616B (it) 1995-03-09

Family

ID=11360018

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI911485A IT1249616B (it) 1991-05-30 1991-05-30 Circuito di precarica di bit line per la lettura di una cella di memoria eprom.

Country Status (4)

Country Link
EP (1) EP0516225B1 (it)
JP (1) JPH05266679A (it)
DE (1) DE69221940T2 (it)
IT (1) IT1249616B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2716758B1 (fr) * 1994-02-28 1996-05-31 Sgs Thomson Microelectronics Circuit de polarisation pour transistor dans une cellule de mémorisation.
EP0757358B1 (en) * 1995-08-04 2001-03-28 STMicroelectronics S.r.l. A circuit for reading non-volatile memories
FR2801419B1 (fr) 1999-11-18 2003-07-25 St Microelectronics Sa Procede et dispositif de lecture pour memoire en circuit integre
KR100618840B1 (ko) * 2004-06-29 2006-09-01 삼성전자주식회사 저 전원전압 플래쉬 메모리장치의 감지회로
TW201915818A (zh) * 2017-10-05 2019-04-16 香港商印芯科技股份有限公司 光學識別模組
US10255967B1 (en) * 2017-11-28 2019-04-09 Micron Technology, Inc. Power reduction technique during write bursts

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727718B2 (ja) * 1988-02-19 1995-03-29 日本電気株式会社 センス回路
JPH0371495A (ja) * 1989-08-11 1991-03-27 Sony Corp 紫外線消去型不揮発性メモリ装置

Also Published As

Publication number Publication date
JPH05266679A (ja) 1993-10-15
DE69221940T2 (de) 1998-04-30
DE69221940D1 (de) 1997-10-09
IT1249616B (it) 1995-03-09
EP0516225A3 (en) 1994-05-18
ITMI911485A1 (it) 1992-11-30
EP0516225A2 (en) 1992-12-02
EP0516225B1 (en) 1997-09-03

Similar Documents

Publication Publication Date Title
EP0443989A3 (en) Sense circuit for reading data stored in nonvolatile memory cells
DE69229763D1 (de) Speicherzugriffsvorrichtung
EP0227549A3 (en) Semiconductor memory device including read only memory element for storing fixed information
DE69221218D1 (de) Halbleiterspeicher
DE69216695T2 (de) Halbleiterspeicher
EP0558970A3 (en) Sensing circuit for semiconductor memory with limited bitline voltage swing
DE69228399D1 (de) Speicherzellenmatrix der Multiporthalbleiterspeicheranordnungstype
DE69221374D1 (de) Stromspeicherzelle
DE69220465D1 (de) Halbleiteranordnung mit Speicherzelle
EP0437791A3 (en) Nonvolatile semiconductor memory wherein dummy cells are used for generating a potential for detecting data
ITMI911485A0 (it) Circuito di precarica di bit line per la lettura di una cella di memoria eprom
DE69508207T2 (de) Speicherwörterzugangsschutzvorrichtung
DE69218878D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69224559D1 (de) Halbleiterspeicher
DE69422453D1 (de) Doppelzugriffspeicher
EP0483723A3 (en) Semiconductor memory device with sense amplifier unit as well as data register/pointer shared between plural memory cell arrays
EP0573046A3 (en) Semiconductor memory device with single data line pair shared between memory cell arrays
ITMI920120A0 (it) Disposizione di una schiera di celle ridondanti per un dispositivo di memoria a semiconduttore
DE69417077T2 (de) Festwertspeicher
DE69217297D1 (de) Halbleiterspeicher mit nichtfluechtiger halbleiterspeicherzelle
DE69530825D1 (de) Verbesserungen an Speicheranordnungen
IT8722828A0 (it) Circuito di polarizzazione e precarica per linea di bit di celledi memoria eprom in tecnologia cmos
DE69223857T2 (de) Halbleiterspeicher
DE69126234D1 (de) Wortleitungstreiberschaltung für nichtflüchtiges Speicherzellenarray
KR920015700U (ko) 메모리의 워드라인 구조

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970530