IT993472B - Procedimento per fabbricare circuiti mos con canali complemen tari a strati sottili - Google Patents

Procedimento per fabbricare circuiti mos con canali complemen tari a strati sottili

Info

Publication number
IT993472B
IT993472B IT29511/73A IT2951173A IT993472B IT 993472 B IT993472 B IT 993472B IT 29511/73 A IT29511/73 A IT 29511/73A IT 2951173 A IT2951173 A IT 2951173A IT 993472 B IT993472 B IT 993472B
Authority
IT
Italy
Prior art keywords
procedure
layer channels
mos circuits
complementary thin
manufacturing mos
Prior art date
Application number
IT29511/73A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT993472B publication Critical patent/IT993472B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
IT29511/73A 1972-09-29 1973-09-28 Procedimento per fabbricare circuiti mos con canali complemen tari a strati sottili IT993472B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2247975A DE2247975C3 (de) 1972-09-29 1972-09-29 Verfahren zur Herstellung von Dünnschicht-Schaltungen mit komplementären MOS-Transistoren

Publications (1)

Publication Number Publication Date
IT993472B true IT993472B (it) 1975-09-30

Family

ID=5857826

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29511/73A IT993472B (it) 1972-09-29 1973-09-28 Procedimento per fabbricare circuiti mos con canali complemen tari a strati sottili

Country Status (9)

Country Link
US (1) US3859716A (it)
JP (1) JPS5550397B2 (it)
BE (1) BE805480A (it)
DE (1) DE2247975C3 (it)
FR (1) FR2201541B1 (it)
GB (1) GB1417055A (it)
IT (1) IT993472B (it)
LU (1) LU68516A1 (it)
NL (1) NL7313426A (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3920481A (en) * 1974-06-03 1975-11-18 Fairchild Camera Instr Co Process for fabricating insulated gate field effect transistor structure
JPS5180178A (it) * 1975-01-10 1976-07-13 Hitachi Ltd
US4035829A (en) * 1975-01-13 1977-07-12 Rca Corporation Semiconductor device and method of electrically isolating circuit components thereon
DE2529951A1 (de) * 1975-07-04 1977-01-27 Siemens Ag Lateraler, bipolarer transistor
JPS5272184A (en) * 1975-12-12 1977-06-16 Matsushita Electric Ind Co Ltd Productuion of mos type transistor
US4313768A (en) * 1978-04-06 1982-02-02 Harris Corporation Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate
US4402002A (en) * 1978-04-06 1983-08-30 Harris Corporation Radiation hardened-self aligned CMOS and method of fabrication
US4333224A (en) * 1978-04-24 1982-06-08 Buchanan Bobby L Method of fabricating polysilicon/silicon junction field effect transistors
JPS54158878A (en) * 1978-06-05 1979-12-15 Nec Corp Manufacture of semiconductor device
JPS559490A (en) * 1978-07-07 1980-01-23 Matsushita Electric Ind Co Ltd Production method of insulating gate type semiconductor device
US4348804A (en) * 1978-07-12 1982-09-14 Vlsi Technology Research Association Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation
JPS5731907U (it) * 1980-08-01 1982-02-19
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4825277A (en) * 1987-11-17 1989-04-25 Motorola Inc. Trench isolation process and structure
US4960727A (en) * 1987-11-17 1990-10-02 Motorola, Inc. Method for forming a dielectric filled trench
JP2831745B2 (ja) * 1989-10-31 1998-12-02 富士通株式会社 半導体装置及びその製造方法
JP2525708B2 (ja) * 1992-04-27 1996-08-21 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2525707B2 (ja) * 1992-04-27 1996-08-21 セイコーエプソン株式会社 半導体集積回路
JPH07335904A (ja) 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜半導体集積回路
US6433361B1 (en) 1994-04-29 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and method for forming the same
JP3312083B2 (ja) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
JPH0832039A (ja) * 1994-07-12 1996-02-02 Nippondenso Co Ltd 半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3750268A (en) * 1971-09-10 1973-08-07 Motorola Inc Poly-silicon electrodes for c-igfets

Also Published As

Publication number Publication date
GB1417055A (en) 1975-12-10
NL7313426A (it) 1974-04-02
JPS4973983A (it) 1974-07-17
JPS5550397B2 (it) 1980-12-17
DE2247975C3 (de) 1979-11-15
DE2247975B2 (de) 1979-03-15
BE805480A (fr) 1974-01-16
US3859716A (en) 1975-01-14
FR2201541B1 (it) 1977-09-09
FR2201541A1 (it) 1974-04-26
DE2247975A1 (de) 1974-04-04
LU68516A1 (it) 1973-12-10

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