IT993007B - Circuito logico polifase impiegante transistori ad effetto di campo metallo isolatore semiconduttore complementari - Google Patents

Circuito logico polifase impiegante transistori ad effetto di campo metallo isolatore semiconduttore complementari

Info

Publication number
IT993007B
IT993007B IT2795973A IT2795973A IT993007B IT 993007 B IT993007 B IT 993007B IT 2795973 A IT2795973 A IT 2795973A IT 2795973 A IT2795973 A IT 2795973A IT 993007 B IT993007 B IT 993007B
Authority
IT
Italy
Prior art keywords
polyphase
field effect
effect transistors
logical circuit
complementary semiconductor
Prior art date
Application number
IT2795973A
Other languages
English (en)
Italian (it)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of IT993007B publication Critical patent/IT993007B/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096Synchronous circuits, i.e. using clock signals
    • H03K19/0963Synchronous circuits, i.e. using clock signals using transistors of complementary type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
IT2795973A 1972-08-25 1973-08-17 Circuito logico polifase impiegante transistori ad effetto di campo metallo isolatore semiconduttore complementari IT993007B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47084574A JPS4940851A (xx) 1972-08-25 1972-08-25

Publications (1)

Publication Number Publication Date
IT993007B true IT993007B (it) 1975-09-30

Family

ID=13834430

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2795973A IT993007B (it) 1972-08-25 1973-08-17 Circuito logico polifase impiegante transistori ad effetto di campo metallo isolatore semiconduttore complementari

Country Status (7)

Country Link
JP (1) JPS4940851A (xx)
CH (1) CH567840A5 (xx)
DE (1) DE2337070A1 (xx)
FR (1) FR2197278B1 (xx)
GB (1) GB1384830A (xx)
IT (1) IT993007B (xx)
NL (1) NL7309964A (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5196275A (xx) * 1975-02-20 1976-08-24
DE2556735C3 (de) * 1975-12-17 1979-02-01 Deutsche Itt Industries Gmbh, 7800 Freiburg MOS-Leistungsstufe zum Erzeugen zweier nichtüberlappender Taktsignale
JPS52115637A (en) * 1976-03-24 1977-09-28 Sharp Corp Mos transistor circuit
US4044270A (en) * 1976-06-21 1977-08-23 Rockwell International Corporation Dynamic logic gate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1127687A (en) * 1965-12-13 1968-09-18 Rca Corp Logic circuitry
US3573487A (en) * 1969-03-05 1971-04-06 North American Rockwell High speed multiphase gate
US3601627A (en) * 1970-07-13 1971-08-24 North American Rockwell Multiple phase logic gates for shift register stages

Also Published As

Publication number Publication date
CH567840A5 (xx) 1975-10-15
GB1384830A (en) 1975-02-26
NL7309964A (xx) 1974-02-27
FR2197278A1 (xx) 1974-03-22
DE2337070A1 (de) 1974-03-21
FR2197278B1 (xx) 1976-05-28
JPS4940851A (xx) 1974-04-17

Similar Documents

Publication Publication Date Title
IT998626B (it) Metodo per stabilizzare transistori ad effetto di campo
JPS5533096A (en) Method of manufacturing integrated circuit having complementary field effect transistor
ATA594873A (de) Hochintergrierte (lsi-) halbleiterschaltung
IT1058321B (it) Transistore complementare ad effetto di campo
AT311092B (de) Halbleiterschaltung
BE764990A (fr) Circuit monolithique semiconducteur
SE386541B (sv) Monolitisk integrerad halvledarkrets
IT1063968B (it) Sistema per la fabbricazione di circuiti microelettronici
IT999726B (it) Apparecchio per la protezione di circuiti elettrici di potenza da sovracorrente
IT1070009B (it) Transistore ad effetto di campo perfezionato
IT962927B (it) Transistore ad effetto di campo
SE394344B (sv) Anordning for kylning av halvledarkomponenter
AT324424B (de) Integrierte halbleiterschaltung
AT308241B (de) Integrierte Halbleiterschaltung
IT994173B (it) Sistemazione di circuito logico che usa transistor i g detti anche transistor ad effetto di campo a griglia isolata
IT995589B (it) Complesso di semiconduttori
IT963413B (it) Procedimento di fotoincisione particolarmente per la fabbrica zione di circuiti integrati
IT953974B (it) Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo
AT376844B (de) Halbleiterbauteil
IT938972B (it) Disposizione di semiconduttori fotosensibile
IT1011152B (it) Procedimento per realizzare circui ti integrati con transistori ad ef fetto di campo con canali comple mentari
IT994313B (it) Circuito elettronico di commuta zione
IT993007B (it) Circuito logico polifase impiegante transistori ad effetto di campo metallo isolatore semiconduttore complementari
IT981799B (it) Struttura di semiconduttore con soglia di campo incrementata e procedimento per produrla
IT977793B (it) Cipcuito elettrico comprendente transistori ad effetto di campo e bipolari combinati