IT993007B - POLYPHASE LOGICAL CIRCUIT USING FIELD EFFECT TRANSISTORS METAL COMPLEMENTARY SEMICONDUCTOR INSULATOR - Google Patents

POLYPHASE LOGICAL CIRCUIT USING FIELD EFFECT TRANSISTORS METAL COMPLEMENTARY SEMICONDUCTOR INSULATOR

Info

Publication number
IT993007B
IT993007B IT2795973A IT2795973A IT993007B IT 993007 B IT993007 B IT 993007B IT 2795973 A IT2795973 A IT 2795973A IT 2795973 A IT2795973 A IT 2795973A IT 993007 B IT993007 B IT 993007B
Authority
IT
Italy
Prior art keywords
polyphase
field effect
effect transistors
logical circuit
complementary semiconductor
Prior art date
Application number
IT2795973A
Other languages
Italian (it)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of IT993007B publication Critical patent/IT993007B/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H03K19/0963—Synchronous circuits, i.e. using clock signals using transistors of complementary type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
IT2795973A 1972-08-25 1973-08-17 POLYPHASE LOGICAL CIRCUIT USING FIELD EFFECT TRANSISTORS METAL COMPLEMENTARY SEMICONDUCTOR INSULATOR IT993007B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47084574A JPS4940851A (en) 1972-08-25 1972-08-25

Publications (1)

Publication Number Publication Date
IT993007B true IT993007B (en) 1975-09-30

Family

ID=13834430

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2795973A IT993007B (en) 1972-08-25 1973-08-17 POLYPHASE LOGICAL CIRCUIT USING FIELD EFFECT TRANSISTORS METAL COMPLEMENTARY SEMICONDUCTOR INSULATOR

Country Status (7)

Country Link
JP (1) JPS4940851A (en)
CH (1) CH567840A5 (en)
DE (1) DE2337070A1 (en)
FR (1) FR2197278B1 (en)
GB (1) GB1384830A (en)
IT (1) IT993007B (en)
NL (1) NL7309964A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5196275A (en) * 1975-02-20 1976-08-24
DE2556735C3 (en) * 1975-12-17 1979-02-01 Deutsche Itt Industries Gmbh, 7800 Freiburg MOS power stage for generating two non-overlapping clock signals
JPS52115637A (en) * 1976-03-24 1977-09-28 Sharp Corp Mos transistor circuit
US4044270A (en) * 1976-06-21 1977-08-23 Rockwell International Corporation Dynamic logic gate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1127687A (en) * 1965-12-13 1968-09-18 Rca Corp Logic circuitry
US3573487A (en) * 1969-03-05 1971-04-06 North American Rockwell High speed multiphase gate
US3601627A (en) * 1970-07-13 1971-08-24 North American Rockwell Multiple phase logic gates for shift register stages

Also Published As

Publication number Publication date
JPS4940851A (en) 1974-04-17
GB1384830A (en) 1975-02-26
CH567840A5 (en) 1975-10-15
FR2197278B1 (en) 1976-05-28
DE2337070A1 (en) 1974-03-21
NL7309964A (en) 1974-02-27
FR2197278A1 (en) 1974-03-22

Similar Documents

Publication Publication Date Title
IT998626B (en) METHOD FOR STABILIZING FIELD EFFECT TRANSISTORS
JPS5533096A (en) Method of manufacturing integrated circuit having complementary field effect transistor
AT311092B (en) Semiconductor circuit
ATA594873A (en) HIGHLY INTERMEDIATE (LSI) SEMICONDUCTOR CIRCUIT
IT1058321B (en) FIELD-EFFECTIVE COMPLEMENTARY TRANSISTOR
BE764990A (en) SEMICONDUCTOR MONOLITHIC CIRCUIT
SE386541B (en) MONOLITIC INTEGRATED SEMICONDUCTOR CIRCUIT
IT1063968B (en) SYSTEM FOR THE MANUFACTURE OF MICRO-ELECTRONIC CIRCUITS
IT999726B (en) DEVICE FOR THE PROTECTION OF ELECTRICAL POWER CIRCUITS FROM OVERCURRENT
IT1070009B (en) PERFECTED FIELD EFFECT TRANSISTOR
IT962927B (en) FIELD EFFECT TRANSISTOR
SE394344B (en) DEVICE FOR COOLING OF SEMICONDUCTOR COMPONENTS
AT324424B (en) INTEGRATED SEMI-CONDUCTOR CIRCUIT
AT308241B (en) Integrated semiconductor circuit
AT376844B (en) SEMICONDUCTOR COMPONENT
IT994173B (en) LOGICAL CIRCUIT ARRANGEMENT USING TRANSISTOR I G ALSO KNOWN AS ISOLATED GRID FIELD EFFECT TRANSISTOR
IT995589B (en) COMPLEX OF SEMICONDUCTORS
IT953974B (en) FIELD EFFECT TRANSISTOR AND PROCEDURE FOR MANUFACTURING FIELD EFFECT TRANSISTORS
IT938972B (en) ARRANGEMENT OF PHOTOSENSITIVE SEMICONDUCTORS
IT963413B (en) PHOTOENGRAVING PROCEDURE PARTICULARLY FOR THE MANUFACTURE OF INTEGRATED CIRCUITS
IT994313B (en) ELECTRONIC SWITCHING CIRCUIT
IT1011152B (en) PROCEDURE TO REALIZE INTEGRATED CIRCUITS WITH FIELD EFFECT EF TRANSISTORS WITH COMPLE MENTARY CHANNELS
IT981799B (en) SEMICONDUCTOR STRUCTURE WITH INCREASED FIELD THRESHOLD AND PROCEDURE FOR PRODUCING IT
IT993007B (en) POLYPHASE LOGICAL CIRCUIT USING FIELD EFFECT TRANSISTORS METAL COMPLEMENTARY SEMICONDUCTOR INSULATOR
IT977793B (en) ELECTRICAL CIRCUIT INCLUDING COMBINED BIPOLAR AND FIELD EFFECT TRANSISTORS