IT981659B - Struttura di semiconduttore con zone sporgenti e procedimento per ottenerla - Google Patents

Struttura di semiconduttore con zone sporgenti e procedimento per ottenerla

Info

Publication number
IT981659B
IT981659B IT22206/73A IT2220673A IT981659B IT 981659 B IT981659 B IT 981659B IT 22206/73 A IT22206/73 A IT 22206/73A IT 2220673 A IT2220673 A IT 2220673A IT 981659 B IT981659 B IT 981659B
Authority
IT
Italy
Prior art keywords
layer
photoresist
pads
leads
exposed
Prior art date
Application number
IT22206/73A
Other languages
English (en)
Italian (it)
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Application granted granted Critical
Publication of IT981659B publication Critical patent/IT981659B/it

Links

Classifications

    • H10P95/00—
    • H10W72/90—
    • H10W72/01255—
    • H10W72/01951—
    • H10W72/20—
    • H10W72/251—
    • H10W72/5522—

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT22206/73A 1972-03-27 1973-03-27 Struttura di semiconduttore con zone sporgenti e procedimento per ottenerla IT981659B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00238116A US3821785A (en) 1972-03-27 1972-03-27 Semiconductor structure with bumps

Publications (1)

Publication Number Publication Date
IT981659B true IT981659B (it) 1974-10-10

Family

ID=22896575

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22206/73A IT981659B (it) 1972-03-27 1973-03-27 Struttura di semiconduttore con zone sporgenti e procedimento per ottenerla

Country Status (8)

Country Link
US (1) US3821785A (enExample)
JP (1) JPS52670B2 (enExample)
CA (1) CA984060A (enExample)
DE (1) DE2314731C3 (enExample)
FR (1) FR2178007B1 (enExample)
GB (1) GB1377601A (enExample)
IT (1) IT981659B (enExample)
NL (1) NL7304183A (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906541A (en) * 1974-03-29 1975-09-16 Gen Electric Field effect transistor devices and methods of making same
JPS5130673U (enExample) * 1974-08-26 1976-03-05
US3959522A (en) * 1975-04-30 1976-05-25 Rca Corporation Method for forming an ohmic contact
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal
US4293637A (en) * 1977-05-31 1981-10-06 Matsushita Electric Industrial Co., Ltd. Method of making metal electrode of semiconductor device
US4438181A (en) 1981-01-13 1984-03-20 Jon M. Schroeder Electronic component bonding tape
DE3135007A1 (de) * 1981-09-04 1983-03-24 Licentia Gmbh Mehrschichtenkontakt fuer eine halbleiteranordnung
JPS59193036A (ja) * 1983-04-16 1984-11-01 Toshiba Corp 半導体装置の製造方法
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
US4742023A (en) * 1986-08-28 1988-05-03 Fujitsu Limited Method for producing a semiconductor device
US4875617A (en) * 1987-01-20 1989-10-24 Citowsky Elya L Gold-tin eutectic lead bonding method and structure
US4937006A (en) * 1988-07-29 1990-06-26 International Business Machines Corporation Method and apparatus for fluxless solder bonding
US5130779A (en) * 1990-06-19 1992-07-14 International Business Machines Corporation Solder mass having conductive encapsulating arrangement
KR960016007B1 (ko) * 1993-02-08 1996-11-25 삼성전자 주식회사 반도체 칩 범프의 제조방법
US6342442B1 (en) * 1998-11-20 2002-01-29 Agere Systems Guardian Corp. Kinetically controlled solder bonding
US6428942B1 (en) * 1999-10-28 2002-08-06 Fujitsu Limited Multilayer circuit structure build up method
US6214646B1 (en) * 2000-02-29 2001-04-10 Lucent Technologies Inc. Soldering optical subassemblies
US6818545B2 (en) 2001-03-05 2004-11-16 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
US20040140219A1 (en) * 2003-01-21 2004-07-22 Texas Instruments Incorporated System and method for pulse current plating
DE102004024644A1 (de) * 2004-05-18 2005-12-22 Infineon Technologies Ag Verfahren zum Aufbringen metallischer Strukturen auf Substrate und Halbleiterbauelement
JP4852041B2 (ja) * 2004-08-10 2012-01-11 デイジ プレシジョン インダストリーズ リミテッド 剪断試験装置
DE102005055280B3 (de) * 2005-11-17 2007-04-12 Infineon Technologies Ag Verbindungselement zwischen Halbleiterchip und Schaltungsträger sowie Verfahren zur Herstellung und Verwendung des Verbindungselements
TWI298204B (en) * 2005-11-21 2008-06-21 Advanced Semiconductor Eng Structure of bumps forming on an under metallurgy layer and method for making the same
JP5060494B2 (ja) * 2006-02-17 2012-10-31 デイジ プレシジョン インダストリーズ リミテッド せん断試験装置
DE102008042107A1 (de) * 2008-09-15 2010-03-18 Robert Bosch Gmbh Elektronisches Bauteil sowie Verfahren zu seiner Herstellung
TWM397591U (en) * 2010-04-22 2011-02-01 Mao Bang Electronic Co Ltd Bumping structure
KR102430984B1 (ko) * 2015-09-22 2022-08-09 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10903151B2 (en) * 2018-05-23 2021-01-26 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1196834A (en) * 1967-03-29 1970-07-01 Hitachi Ltd Improvement of Electrode Structure in a Semiconductor Device.
FR1569479A (enExample) * 1967-07-13 1969-05-30

Also Published As

Publication number Publication date
FR2178007B1 (enExample) 1978-08-04
FR2178007A1 (enExample) 1973-11-09
US3821785A (en) 1974-06-28
JPS52670B2 (enExample) 1977-01-10
JPS499187A (enExample) 1974-01-26
CA984060A (en) 1976-02-17
GB1377601A (en) 1974-12-18
DE2314731A1 (de) 1973-10-11
DE2314731C3 (de) 1982-10-14
DE2314731B2 (de) 1980-06-04
NL7304183A (enExample) 1973-10-01

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