IT979892B - Metodo di fabbricazione di un diodo a barriera di schottky e dispositivo cosi prodotto - Google Patents

Metodo di fabbricazione di un diodo a barriera di schottky e dispositivo cosi prodotto

Info

Publication number
IT979892B
IT979892B IT48870/73A IT4887073A IT979892B IT 979892 B IT979892 B IT 979892B IT 48870/73 A IT48870/73 A IT 48870/73A IT 4887073 A IT4887073 A IT 4887073A IT 979892 B IT979892 B IT 979892B
Authority
IT
Italy
Prior art keywords
manufacturing
produced
schottky barrier
barrier diode
diode
Prior art date
Application number
IT48870/73A
Other languages
English (en)
Italian (it)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00237060A external-priority patent/US3808072A/en
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT979892B publication Critical patent/IT979892B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
IT48870/73A 1972-03-22 1973-03-16 Metodo di fabbricazione di un diodo a barriera di schottky e dispositivo cosi prodotto IT979892B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US00237060A US3808072A (en) 1972-03-22 1972-03-22 In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide
US24931172A 1972-05-01 1972-05-01

Publications (1)

Publication Number Publication Date
IT979892B true IT979892B (it) 1974-09-30

Family

ID=26930348

Family Applications (2)

Application Number Title Priority Date Filing Date
IT48870/73A IT979892B (it) 1972-03-22 1973-03-16 Metodo di fabbricazione di un diodo a barriera di schottky e dispositivo cosi prodotto
IT48869/73A IT982897B (it) 1972-03-22 1973-03-16 Mordenzatura in situ di arseniuro di gallio durante lo accrescimento in fase vapore di arseniuro di gallio epitassiale

Family Applications After (1)

Application Number Title Priority Date Filing Date
IT48869/73A IT982897B (it) 1972-03-22 1973-03-16 Mordenzatura in situ di arseniuro di gallio durante lo accrescimento in fase vapore di arseniuro di gallio epitassiale

Country Status (6)

Country Link
JP (2) JPS5232831B2 (enrdf_load_stackoverflow)
FR (2) FR2176999B1 (enrdf_load_stackoverflow)
GB (2) GB1425101A (enrdf_load_stackoverflow)
IT (2) IT979892B (enrdf_load_stackoverflow)
NL (2) NL162313C (enrdf_load_stackoverflow)
SE (2) SE388972B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244582A (en) * 1975-10-06 1977-04-07 New Japan Radio Co Ltd Semiconductor device and process for production of the same
JPS55114620A (en) * 1979-02-22 1980-09-04 Yoshio Kaneda Driver's cab on tractor or the like
JPS56169331A (en) * 1980-05-30 1981-12-26 Nec Corp Vapor phase etching method for compound semiconductor
JPS5770810A (en) * 1980-10-17 1982-05-01 Lion Corp Cosmetic for hair
JPS60222410A (ja) * 1984-04-20 1985-11-07 Asahi Denka Kogyo Kk シヤンプ−組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916231A (enrdf_load_stackoverflow) * 1972-06-06 1974-02-13

Also Published As

Publication number Publication date
JPS5433711B2 (enrdf_load_stackoverflow) 1979-10-22
NL160989C (nl) 1979-12-17
GB1425101A (en) 1976-02-18
NL162313C (nl) 1980-05-16
FR2176998A1 (enrdf_load_stackoverflow) 1973-11-02
SE388972B (sv) 1976-10-18
GB1425102A (en) 1976-02-18
FR2176998B1 (enrdf_load_stackoverflow) 1976-11-05
DE2313768B2 (de) 1975-11-20
NL160989B (nl) 1979-07-16
FR2176999A1 (enrdf_load_stackoverflow) 1973-11-02
NL7303954A (enrdf_load_stackoverflow) 1973-09-25
NL7303958A (enrdf_load_stackoverflow) 1973-09-25
JPS5232831B2 (enrdf_load_stackoverflow) 1977-08-24
DE2313768A1 (de) 1973-10-04
SE375557B (enrdf_load_stackoverflow) 1975-04-21
FR2176999B1 (enrdf_load_stackoverflow) 1978-03-03
IT982897B (it) 1974-10-21
JPS4948281A (enrdf_load_stackoverflow) 1974-05-10
NL162313B (nl) 1979-12-17
JPS5019367A (enrdf_load_stackoverflow) 1975-02-28

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