GB1425101A - Schottky barrier diode devices and methods of fabricating the same - Google Patents
Schottky barrier diode devices and methods of fabricating the sameInfo
- Publication number
- GB1425101A GB1425101A GB1383973A GB1383973A GB1425101A GB 1425101 A GB1425101 A GB 1425101A GB 1383973 A GB1383973 A GB 1383973A GB 1383973 A GB1383973 A GB 1383973A GB 1425101 A GB1425101 A GB 1425101A
- Authority
- GB
- United Kingdom
- Prior art keywords
- schottky barrier
- gaas
- substrate
- fabricating
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 title abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
1425101 Semiconductor devices WESTERN ELECTRIC CO Inc 22 March 1973 [22 March 1972 and 1 May 1972] 13839/73 Heading H1K A GaAs substrate 25 doped with O or Cr and a source of Ga 24 are inserted in quartz reaction chamber 23 (Fig. 1) contained in the muffle 22 of an oven 21 and heated. Hydrogen from source 15 is pumped through Pd-Ag membranes 17 and bubbles through AsCl 3 reservoir 12; the resultant gas admixed with dopant from inlet 18 e.g. S,Se passing to the reaction chamber 23. Epitaxial GaAs layer 31 (Fig. 4) is deposited on the substrate, and is then etched by adding He to the carrier gas in excess of its H 2 content. Then the He flow is terminated and a further GaAs epitaxial film 32 is deposited on 31 without interfacial layers. Growth is terminated by removal of the coated substrate, and an ohmic contact 33 of Au, Sn is applied to the lower epitaxial layer 31 and a Schottky barrier contact 34 of Ti, Pt, Au to the upper layer 32 (Fig. 5). Specification 1,425,102 is referred to.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00237060A US3808072A (en) | 1972-03-22 | 1972-03-22 | In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide |
US24931172A | 1972-05-01 | 1972-05-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1425101A true GB1425101A (en) | 1976-02-18 |
Family
ID=26930348
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1383973A Expired GB1425101A (en) | 1972-03-22 | 1973-03-22 | Schottky barrier diode devices and methods of fabricating the same |
GB1384073A Expired GB1425102A (en) | 1972-03-22 | 1973-03-22 | Methods of etching gallium arsenide substrates and epitaxially depositing gallium arsenide thereon |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1384073A Expired GB1425102A (en) | 1972-03-22 | 1973-03-22 | Methods of etching gallium arsenide substrates and epitaxially depositing gallium arsenide thereon |
Country Status (6)
Country | Link |
---|---|
JP (2) | JPS5232831B2 (en) |
FR (2) | FR2176998B1 (en) |
GB (2) | GB1425101A (en) |
IT (2) | IT982897B (en) |
NL (2) | NL160989C (en) |
SE (2) | SE375557B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244582A (en) * | 1975-10-06 | 1977-04-07 | New Japan Radio Co Ltd | Semiconductor device and process for production of the same |
JPS55114620A (en) * | 1979-02-22 | 1980-09-04 | Yoshio Kaneda | Driver's cab on tractor or the like |
JPS56169331A (en) * | 1980-05-30 | 1981-12-26 | Nec Corp | Vapor phase etching method for compound semiconductor |
JPS5770810A (en) * | 1980-10-17 | 1982-05-01 | Lion Corp | Cosmetic for hair |
JPS60222410A (en) * | 1984-04-20 | 1985-11-07 | Asahi Denka Kogyo Kk | Shampoo composition |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916231A (en) * | 1972-06-06 | 1974-02-13 |
-
1973
- 1973-03-09 SE SE7303347A patent/SE375557B/xx unknown
- 1973-03-09 SE SE7303348A patent/SE388972B/en unknown
- 1973-03-16 IT IT4886973A patent/IT982897B/en active
- 1973-03-16 IT IT4887073A patent/IT979892B/en active
- 1973-03-21 FR FR7310133A patent/FR2176998B1/fr not_active Expired
- 1973-03-21 FR FR7310134A patent/FR2176999B1/fr not_active Expired
- 1973-03-21 NL NL7303958A patent/NL160989C/en not_active IP Right Cessation
- 1973-03-21 NL NL7303954A patent/NL162313C/en not_active IP Right Cessation
- 1973-03-22 GB GB1383973A patent/GB1425101A/en not_active Expired
- 1973-03-22 JP JP3193373A patent/JPS5232831B2/ja not_active Expired
- 1973-03-22 GB GB1384073A patent/GB1425102A/en not_active Expired
- 1973-05-10 JP JP5125473A patent/JPS5433711B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5019367A (en) | 1975-02-28 |
NL160989C (en) | 1979-12-17 |
FR2176999A1 (en) | 1973-11-02 |
NL7303954A (en) | 1973-09-25 |
IT982897B (en) | 1974-10-21 |
NL160989B (en) | 1979-07-16 |
DE2313768B2 (en) | 1975-11-20 |
FR2176999B1 (en) | 1978-03-03 |
JPS5433711B2 (en) | 1979-10-22 |
DE2313768A1 (en) | 1973-10-04 |
JPS5232831B2 (en) | 1977-08-24 |
SE375557B (en) | 1975-04-21 |
NL7303958A (en) | 1973-09-25 |
IT979892B (en) | 1974-09-30 |
FR2176998A1 (en) | 1973-11-02 |
GB1425102A (en) | 1976-02-18 |
NL162313B (en) | 1979-12-17 |
NL162313C (en) | 1980-05-16 |
SE388972B (en) | 1976-10-18 |
FR2176998B1 (en) | 1976-11-05 |
JPS4948281A (en) | 1974-05-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |